KR102344557B1 - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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KR102344557B1
KR102344557B1 KR1020150055132A KR20150055132A KR102344557B1 KR 102344557 B1 KR102344557 B1 KR 102344557B1 KR 1020150055132 A KR1020150055132 A KR 1020150055132A KR 20150055132 A KR20150055132 A KR 20150055132A KR 102344557 B1 KR102344557 B1 KR 102344557B1
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film
insulating film
conductive film
oxide semiconductor
region
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KR20150123718A (ko
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준이치 고에즈카
유키노리 시마
마사미 진트유
야스타카 나가자와
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020150055132A 2014-04-25 2015-04-20 반도체 장치 및 그 제작 방법 Active KR102344557B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014091703 2014-04-25
JPJP-P-2014-091703 2014-04-25

Publications (2)

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KR20150123718A KR20150123718A (ko) 2015-11-04
KR102344557B1 true KR102344557B1 (ko) 2021-12-30

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US (1) US9780226B2 (enExample)
JP (1) JP6534557B2 (enExample)
KR (1) KR102344557B1 (enExample)
TW (1) TWI655771B (enExample)

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US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN113793872A (zh) 2014-12-10 2021-12-14 株式会社半导体能源研究所 半导体装置及其制造方法
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6210105B2 (ja) 2015-11-04 2017-10-11 トヨタ自動車株式会社 バッテリ装置
JP6607013B2 (ja) * 2015-12-08 2019-11-20 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
KR102700557B1 (ko) 2016-01-18 2024-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물막, 반도체 장치, 및 표시 장치
US9905657B2 (en) * 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE112017005330T5 (de) 2016-10-21 2019-08-08 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US10910407B2 (en) 2017-01-30 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102512106B1 (ko) * 2017-09-01 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US11444025B2 (en) * 2020-06-18 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and fabrication method thereof

Citations (3)

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JP2011151394A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2013251534A (ja) * 2012-04-30 2013-12-12 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014075580A (ja) 2012-09-14 2014-04-24 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

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