KR102306410B1 - 기재내 규소 주입 및 이를 위한 규소 전구체 조성물의 제공 - Google Patents

기재내 규소 주입 및 이를 위한 규소 전구체 조성물의 제공 Download PDF

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KR102306410B1
KR102306410B1 KR1020167006670A KR20167006670A KR102306410B1 KR 102306410 B1 KR102306410 B1 KR 102306410B1 KR 1020167006670 A KR1020167006670 A KR 1020167006670A KR 20167006670 A KR20167006670 A KR 20167006670A KR 102306410 B1 KR102306410 B1 KR 102306410B1
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silicon
delete delete
gas
precursor
present disclosure
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Korean (ko)
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KR20160043066A (ko
Inventor
잉 탕
조셉 디 스위니
티옌니우 첸
제임스 제이 메이어
리차드 에스 레이
올렉 빌
샤라드 엔 예다브
로버트 카임
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엔테그리스, 아이엔씨.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H01L21/26506—
    • H01L21/26546—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
KR1020167006670A 2013-08-16 2014-08-14 기재내 규소 주입 및 이를 위한 규소 전구체 조성물의 제공 Active KR102306410B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361866918P 2013-08-16 2013-08-16
US61/866,918 2013-08-16
PCT/US2014/051162 WO2015023903A1 (en) 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor

Publications (2)

Publication Number Publication Date
KR20160043066A KR20160043066A (ko) 2016-04-20
KR102306410B1 true KR102306410B1 (ko) 2021-09-28

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KR1020167006670A Active KR102306410B1 (ko) 2013-08-16 2014-08-14 기재내 규소 주입 및 이를 위한 규소 전구체 조성물의 제공

Country Status (8)

Country Link
US (1) US11062906B2 (https=)
EP (1) EP3033765A4 (https=)
JP (2) JP2016534560A (https=)
KR (1) KR102306410B1 (https=)
CN (1) CN105637616A (https=)
SG (2) SG11201601015RA (https=)
TW (2) TWI636011B (https=)
WO (1) WO2015023903A1 (https=)

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KR102202345B1 (ko) * 2016-05-13 2021-01-12 엔테그리스, 아이엔씨. 질소 이온 주입에서의 이온 소스 성능 개선을 위한 플루오르화된 조성물
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US10177026B2 (en) 2016-11-29 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and fabrication method therefor
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CN115989562B (zh) * 2020-08-26 2025-08-05 胜高股份有限公司 外延硅晶片及其制造方法以及半导体器件的制造方法
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