KR102207228B1 - 기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들 - Google Patents

기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들 Download PDF

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KR102207228B1
KR102207228B1 KR1020157027664A KR20157027664A KR102207228B1 KR 102207228 B1 KR102207228 B1 KR 102207228B1 KR 1020157027664 A KR1020157027664 A KR 1020157027664A KR 20157027664 A KR20157027664 A KR 20157027664A KR 102207228 B1 KR102207228 B1 KR 102207228B1
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photoresist
vapor
deposited
semiconductor wafer
extreme ultraviolet
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KR20150129781A (ko
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티모시 마이클슨
티모시 더블유. 와이드먼
배리 리 친
마지드 에이. 포아드
폴 데아톤
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어플라이드 머티어리얼스, 인코포레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020157027664A 2013-03-14 2014-03-13 기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들 Active KR102207228B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361786042P 2013-03-14 2013-03-14
US61/786,042 2013-03-14
US14/139,457 US9632411B2 (en) 2013-03-14 2013-12-23 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US14/139,457 2013-12-23
PCT/US2014/026826 WO2014152023A1 (en) 2013-03-14 2014-03-13 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Publications (2)

Publication Number Publication Date
KR20150129781A KR20150129781A (ko) 2015-11-20
KR102207228B1 true KR102207228B1 (ko) 2021-01-25

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US (2) US9632411B2 (cg-RX-API-DMAC7.html)
JP (1) JP6964979B2 (cg-RX-API-DMAC7.html)
KR (1) KR102207228B1 (cg-RX-API-DMAC7.html)
CN (1) CN105074572B (cg-RX-API-DMAC7.html)
SG (2) SG10201707388RA (cg-RX-API-DMAC7.html)
TW (1) TWI614364B (cg-RX-API-DMAC7.html)
WO (1) WO2014152023A1 (cg-RX-API-DMAC7.html)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
KR102306612B1 (ko) * 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US9581890B2 (en) * 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
EP4273625A3 (en) 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
CN111837074B (zh) * 2018-03-02 2023-11-03 Asml荷兰有限公司 形成图案化的材料层的方法和设备
SG11202009703QA (en) * 2018-05-11 2020-10-29 Lam Res Corp Methods for making euv patternable hard masks
FI129480B (en) * 2018-08-10 2022-03-15 Pibond Oy Silanol-containing organic-inorganic hybrid coatings for high resolution patterning
US10998191B2 (en) 2018-11-13 2021-05-04 International Business Machines Corporation Graded hardmask interlayer for enhanced extreme ultraviolet performance
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Ａｓｍｌ荷蘭公司 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法
CN113785381B (zh) 2019-04-30 2025-04-22 朗姆研究公司 用于极紫外光刻抗蚀剂改善的原子层蚀刻及选择性沉积处理
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250160237A (ko) * 2019-06-28 2025-11-11 램 리써치 코포레이션 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
KR102746578B1 (ko) 2020-01-15 2024-12-26 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
EP3875633A1 (en) * 2020-03-03 2021-09-08 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Method and apparatus for forming a patterned layer of material
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US12222643B2 (en) 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
US12159787B2 (en) * 2020-07-02 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
KR102781895B1 (ko) 2020-07-07 2025-03-18 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
JP2024522485A (ja) 2021-05-25 2024-06-21 東京エレクトロン株式会社 極端紫外線パターニングのための有機金属膜
US12372871B2 (en) 2021-11-09 2025-07-29 Tokyo Electron Limited EUV active films for EUV lithography
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
US20240027916A1 (en) * 2022-07-21 2024-01-25 Applied Materials, Inc. Fingerprinting and process control of photosensitive film deposition chamber
CN120958566A (zh) 2023-03-17 2025-11-14 朗姆研究公司 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成
CN117587380B (zh) * 2023-11-20 2025-09-16 南开大学 一种使用分子层沉积制备晶圆级铝基-烯二醇干式光刻胶的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040091618A1 (en) * 2002-11-08 2004-05-13 Park Han-Su Photoresist depositon apparatus and method for forming photoresist film using the same
JP2007514293A (ja) * 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド 多成分誘電体膜を形成するためのシステム及び方法
US20070141257A1 (en) * 2004-03-31 2007-06-21 Tokyo Electron Limited Method and apparatus for forming metal silicate film, and method for manufacturing semiconductor device

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143826A (en) * 1981-02-28 1982-09-06 Dainippon Printing Co Ltd Formation of resist pattern on gapped semiconductor substrate
JPS57157522A (en) * 1981-03-23 1982-09-29 Nec Corp Depositing method for resist film for photo-etching technique
JPS60109227A (ja) * 1983-11-18 1985-06-14 Hitachi Ltd 薄膜のパタ−ン形成方法
US4842675A (en) 1986-07-07 1989-06-27 Texas Instruments Incorporated Integrated circuit isolation process
GB8921666D0 (en) 1989-09-26 1989-11-08 Peatgrange Ivd Limited Ion vapour deposition apparatus and method
US5420067A (en) 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
JPH07254556A (ja) * 1993-09-03 1995-10-03 Hitachi Ltd パターン形成方法および形成装置
JPH07106224A (ja) * 1993-10-01 1995-04-21 Hitachi Ltd パターン形成方法
JPH07106234A (ja) * 1993-10-07 1995-04-21 Mitsubishi Electric Corp レジストパターンの形成方法
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JPH07235481A (ja) * 1994-02-25 1995-09-05 Toray Ind Inc 薄膜の製造方法
US5792592A (en) * 1996-05-24 1998-08-11 Symetrix Corporation Photosensitive liquid precursor solutions and use thereof in making thin films
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6096100A (en) 1997-12-12 2000-08-01 Texas Instruments Incorporated Method for processing wafers and cleaning wafer-handling implements
US6010916A (en) 1997-12-05 2000-01-04 Advanced Micro Devices, Inc. Method for improving semiconductor wafer processing
US6140216A (en) 1998-04-14 2000-10-31 Advanced Micro Devices, Inc. Post etch silicide formation using dielectric etchback after global planarization
US6142641A (en) 1998-06-18 2000-11-07 Ultratech Stepper, Inc. Four-mirror extreme ultraviolet (EUV) lithography projection system
US6174651B1 (en) * 1999-01-14 2001-01-16 Steag Rtp Systems, Inc. Method for depositing atomized materials onto a substrate utilizing light exposure for heating
US6749814B1 (en) 1999-03-03 2004-06-15 Symyx Technologies, Inc. Chemical processing microsystems comprising parallel flow microreactors and methods for using same
JP2000331939A (ja) * 1999-05-17 2000-11-30 Applied Materials Inc 成膜装置
TWI267704B (en) 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US6319635B1 (en) 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
WO2002020864A2 (en) 2000-06-16 2002-03-14 Applied Materials, Inc. System and method for depositing high dielectric constant materials and compatible conductive materials
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
US6673524B2 (en) 2000-11-17 2004-01-06 Kouros Ghandehari Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method
JP3939132B2 (ja) 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6840616B2 (en) 2001-03-29 2005-01-11 Scott Summers Air folder adjuster apparatus and method
US20030008148A1 (en) 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
US7455955B2 (en) 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US6734117B2 (en) 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
US6835503B2 (en) 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
US6806006B2 (en) 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US20040018733A1 (en) 2002-07-23 2004-01-29 Hak Baek Jae Method of planarizing a surface of a semiconductor wafer
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
CN1501442A (zh) * 2002-11-12 2004-06-02 阿泰技术有限公社 光刻胶沉积设备以及使用该设备形成光刻胶薄膜的方法
JP2004172272A (ja) * 2002-11-19 2004-06-17 Nikon Corp Ｅｕｖ露光装置及びｅｕｖ露光方法
DE10302342A1 (de) 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
US6908713B2 (en) 2003-02-05 2005-06-21 Intel Corporation EUV mask blank defect mitigation
US7026076B2 (en) 2003-03-03 2006-04-11 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC
DE10317792A1 (de) 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
SG115693A1 (en) 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
US7001788B2 (en) 2003-05-29 2006-02-21 Applied Materials, Inc. Maskless fabrication of waveguide mirrors
KR100520222B1 (ko) 2003-06-23 2005-10-11 삼성전자주식회사 반도체 소자에서의 듀얼 게이트 산화막 구조 및 그에 따른형성방법
US7326502B2 (en) 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
US7005227B2 (en) 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
US7193228B2 (en) 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
US7595414B2 (en) * 2004-03-15 2009-09-29 Ube Industries, Ltd. Metal complex compound comprising β-diketonato ligand
US7198872B2 (en) 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
US20060024589A1 (en) 2004-07-28 2006-02-02 Siegfried Schwarzl Passivation of multi-layer mirror for extreme ultraviolet lithography
EP1791168A1 (en) 2004-09-17 2007-05-30 Asahi Glass Company, Limited Reflective mask blank for euv lithography and method for producing same
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7336416B2 (en) 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US20060275547A1 (en) 2005-06-01 2006-12-07 Lee Chung J Vapor Phase Deposition System and Method
US20060274474A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Substrate Holder
US7432201B2 (en) 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
DE102005052000B3 (de) 2005-10-31 2007-07-05 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit einer Kontaktstruktur auf der Grundlage von Kupfer und Wolfram
US7678511B2 (en) 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
US7712333B2 (en) 2006-03-29 2010-05-11 Asahi Glass Company, Limited Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography
US7736820B2 (en) 2006-05-05 2010-06-15 Asml Netherlands B.V. Anti-reflection coating for an EUV mask
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
JP4801550B2 (ja) * 2006-09-26 2011-10-26 富士通株式会社 レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法
US7892719B2 (en) 2006-11-03 2011-02-22 Intel Corporation Photonic crystal EUV photoresists
JP2008135090A (ja) * 2006-11-27 2008-06-12 Canon Inc レジスト、これを用いた光ディスク用スタンパの製造方法、及び光ディスク用スタンパ
KR20090094322A (ko) 2006-11-27 2009-09-04 가부시키가이샤 니콘 광학 소자, 이것을 사용한 노광 장치, 및 디바이스 제조 방법
US20090278233A1 (en) 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
WO2009031232A1 (ja) 2007-09-07 2009-03-12 Canon Anelva Corporation スパッタリング方法および装置
JP5039495B2 (ja) * 2007-10-04 2012-10-03 ルネサスエレクトロニクス株式会社 マスクブランク検査方法、反射型露光マスクの製造方法、反射型露光方法および半導体集積回路の製造方法
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US20090176367A1 (en) 2008-01-08 2009-07-09 Heidi Baks OPTIMIZED SiCN CAPPING LAYER
KR20090103847A (ko) * 2008-03-28 2009-10-01 캐논 가부시끼가이샤 노광 장치 및 디바이스 제조 방법
KR101584383B1 (ko) 2008-03-31 2016-01-11 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크 및 포토마스크 블랭크의 제조 방법
JP2009245505A (ja) * 2008-03-31 2009-10-22 Pioneer Electronic Corp 光学情報記録媒体製造用の原盤
US8105954B2 (en) * 2008-10-20 2012-01-31 aiwan Semiconductor Manufacturing Company, Ltd. System and method of vapor deposition
JP2010122305A (ja) * 2008-11-17 2010-06-03 Sony Corp 露光装置及び露光方法並びに微細加工装置及び微細加工方法
JP2010170011A (ja) 2009-01-26 2010-08-05 Hoya Corp フォトマスクの修正方法
JP2011053566A (ja) * 2009-09-03 2011-03-17 Sony Corp 現像液、エッチング液および微細加工体の製造方法
CN102019266A (zh) 2009-09-17 2011-04-20 中芯国际集成电路制造(上海)有限公司 涂层材料的涂布方法
JP5716038B2 (ja) 2009-12-15 2015-05-13 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用反射光学素子
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
KR101944655B1 (ko) * 2010-04-02 2019-01-31 가부시키가이샤 니콘 조명 광학계, 광학 장치, 노광 방법 및 디바이스 제조 방법
TW201204868A (en) 2010-07-12 2012-02-01 Applied Materials Inc Compartmentalized chamber
CN103026296B (zh) 2010-07-27 2014-12-10 旭硝子株式会社 Euv光刻用带反射层的基板和euv光刻用反射型掩模底版
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
KR20120042169A (ko) 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 액정 표시 장치 및 그 제조 방법
JP6013720B2 (ja) 2010-11-22 2016-10-25 芝浦メカトロニクス株式会社 反射型マスクの製造方法、および反射型マスクの製造装置
US8475977B2 (en) 2010-12-02 2013-07-02 Intermolecular, Inc Protective cap for extreme ultraviolet lithography masks
NL2007768A (en) 2010-12-14 2012-06-18 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
US8562794B2 (en) 2010-12-14 2013-10-22 Asahi Glass Company, Limited Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank
KR20130139856A (ko) 2011-03-14 2013-12-23 후지 덴키 가부시키가이샤 산화물 기판 및 그 제조 방법
JP2012248664A (ja) * 2011-05-27 2012-12-13 Hitachi Cable Ltd 気相成長装置及び気相成長方法、並びにエピタキシャルウェハ
JP6236000B2 (ja) * 2011-07-08 2017-11-22 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト
NL2009487A (en) 2011-10-14 2013-04-16 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
US8691476B2 (en) 2011-12-16 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and method for forming the same
KR101840846B1 (ko) 2012-02-15 2018-03-21 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
US9051649B2 (en) * 2013-03-11 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film deposition apparatus and method with improved heater cooling efficiency
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040091618A1 (en) * 2002-11-08 2004-05-13 Park Han-Su Photoresist depositon apparatus and method for forming photoresist film using the same
JP2007514293A (ja) * 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド 多成分誘電体膜を形成するためのシステム及び方法
US20070141257A1 (en) * 2004-03-31 2007-06-21 Tokyo Electron Limited Method and apparatus for forming metal silicate film, and method for manufacturing semiconductor device

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US20140268082A1 (en) 2014-09-18
US20170068174A1 (en) 2017-03-09
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TW201439361A (zh) 2014-10-16
KR20150129781A (ko) 2015-11-20
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US9829805B2 (en) 2017-11-28
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