JPS57157522A - Depositing method for resist film for photo-etching technique - Google Patents

Depositing method for resist film for photo-etching technique

Info

Publication number
JPS57157522A
JPS57157522A JP4218281A JP4218281A JPS57157522A JP S57157522 A JPS57157522 A JP S57157522A JP 4218281 A JP4218281 A JP 4218281A JP 4218281 A JP4218281 A JP 4218281A JP S57157522 A JPS57157522 A JP S57157522A
Authority
JP
Japan
Prior art keywords
resist film
composition
deposited
vacuum
thickness direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4218281A
Other languages
Japanese (ja)
Other versions
JPS6364893B2 (en
Inventor
Yasuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4218281A priority Critical patent/JPS57157522A/en
Publication of JPS57157522A publication Critical patent/JPS57157522A/en
Publication of JPS6364893B2 publication Critical patent/JPS6364893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To change the electron ray sensitivity of a deposited film continuously in the film thickness direction by successively altering high-frequency output or the degree of vacuum or the composition of a high molecular monomer gas and varying the composition or the degree of vacuum in the thickness direction of the resist film deposited. CONSTITUTION:Ar 301 is activated by means of a high frequency device 302, and transported to an exhaust system 306. The composition ratio of the prepolymers, polymerization degrees thereof differ, or different monomers 303, 304 is adjusted, they are flowed 308 with Ar in countercurrent shape, polymerization is started and they are deposited onto a sample 307. The property of the resist film deposited also changes by the flow rate of the gas or the degree of vacuum, but the adjustment of the polymerization degrees by high-frequency power is the easiest, and sensitivity can be adjusted by one figure or higher. According to such constitution, the shape of the end section of a resist pattern can freely be altered even when the condition of electron ray irradiation is left as it is constant because the sensitivity can freely be varied in the resist film thickness direction, and a desired film composition can be obtained through simple programme control.
JP4218281A 1981-03-23 1981-03-23 Depositing method for resist film for photo-etching technique Granted JPS57157522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4218281A JPS57157522A (en) 1981-03-23 1981-03-23 Depositing method for resist film for photo-etching technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4218281A JPS57157522A (en) 1981-03-23 1981-03-23 Depositing method for resist film for photo-etching technique

Publications (2)

Publication Number Publication Date
JPS57157522A true JPS57157522A (en) 1982-09-29
JPS6364893B2 JPS6364893B2 (en) 1988-12-14

Family

ID=12628846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4218281A Granted JPS57157522A (en) 1981-03-23 1981-03-23 Depositing method for resist film for photo-etching technique

Country Status (1)

Country Link
JP (1) JPS57157522A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129745A (en) * 1983-12-16 1985-07-11 Shuzo Hattori Resist of three-layer structure and method for achieving high resolution plate making by using it
EP0233747A2 (en) * 1986-02-10 1987-08-26 LOCTITE (IRELAND) Ltd. Vapor deposited photoresists of anionically polymerizable monomers
JPH06332181A (en) * 1993-04-30 1994-12-02 Internatl Business Mach Corp <Ibm> Resist structure and its preparation
JP2016517633A (en) * 2013-03-14 2016-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Deposition-deposited photoresist and manufacturing and lithography system therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129745A (en) * 1983-12-16 1985-07-11 Shuzo Hattori Resist of three-layer structure and method for achieving high resolution plate making by using it
JPH0422260B2 (en) * 1983-12-16 1992-04-16 Shuzo Hatsutori
EP0233747A2 (en) * 1986-02-10 1987-08-26 LOCTITE (IRELAND) Ltd. Vapor deposited photoresists of anionically polymerizable monomers
JPH06332181A (en) * 1993-04-30 1994-12-02 Internatl Business Mach Corp <Ibm> Resist structure and its preparation
JP2016517633A (en) * 2013-03-14 2016-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Deposition-deposited photoresist and manufacturing and lithography system therefor

Also Published As

Publication number Publication date
JPS6364893B2 (en) 1988-12-14

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