KR102089505B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102089505B1
KR102089505B1 KR1020147010202A KR20147010202A KR102089505B1 KR 102089505 B1 KR102089505 B1 KR 102089505B1 KR 1020147010202 A KR1020147010202 A KR 1020147010202A KR 20147010202 A KR20147010202 A KR 20147010202A KR 102089505 B1 KR102089505 B1 KR 102089505B1
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South Korea
Prior art keywords
layer
transistor
oxide semiconductor
insulating layer
conductive layer
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20140063832A (ko
Inventor
순페이 야마자키
아츠오 이소베
유타카 오카자키
타케히사 하타노
사치아키 테즈카
스구루 혼도
토시히코 사이토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20140063832A publication Critical patent/KR20140063832A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147010202A 2011-09-23 2012-09-12 반도체 장치 Expired - Fee Related KR102089505B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011208232 2011-09-23
JPJP-P-2011-208232 2011-09-23
PCT/JP2012/073965 WO2013042696A1 (en) 2011-09-23 2012-09-12 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20140063832A KR20140063832A (ko) 2014-05-27
KR102089505B1 true KR102089505B1 (ko) 2020-03-16

Family

ID=47910261

Family Applications (1)

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KR1020147010202A Expired - Fee Related KR102089505B1 (ko) 2011-09-23 2012-09-12 반도체 장치

Country Status (5)

Country Link
US (1) US20130075722A1 (enExample)
JP (5) JP6137797B2 (enExample)
KR (1) KR102089505B1 (enExample)
TW (1) TWI570923B (enExample)
WO (1) WO2013042696A1 (enExample)

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KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10042446B2 (en) 2013-08-13 2018-08-07 Samsung Electronics Company, Ltd. Interaction modes for object-device interactions
US10108305B2 (en) * 2013-08-13 2018-10-23 Samsung Electronics Company, Ltd. Interaction sensing
US9607991B2 (en) * 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI663733B (zh) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
CN110265550B (zh) * 2014-07-17 2023-10-24 索尼公司 光电转换元件及其制造方法、成像装置、光学传感器
KR102373434B1 (ko) * 2014-11-07 2022-03-14 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
TWI581317B (zh) * 2014-11-14 2017-05-01 群創光電股份有限公司 薄膜電晶體基板及具備該薄膜電晶體基板之顯示面板
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20160308067A1 (en) * 2015-04-17 2016-10-20 Ishiang Shih Metal oxynitride transistor devices
US9825177B2 (en) * 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
JP6850096B2 (ja) * 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
KR102320483B1 (ko) * 2016-04-08 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101914835B1 (ko) * 2016-11-18 2018-11-02 아주대학교산학협력단 금속산화물 이종 접합 구조, 이의 제조방법 및 이를 포함하는 박막트랜지스터
RU2646545C1 (ru) * 2016-12-14 2018-03-05 ООО "Тонкопленочные технологии" Полупроводниковый резистор
US10490130B2 (en) 2017-02-10 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Display system comprising controller which process data
CN118102714A (zh) 2017-03-13 2024-05-28 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US10084074B1 (en) 2017-03-24 2018-09-25 Qualcomm Incorporated Compound semiconductor field effect transistor gate length scaling
KR20190142344A (ko) 2017-04-28 2019-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP7091594B2 (ja) * 2017-08-31 2022-06-28 京東方科技集團股▲ふん▼有限公司 薄膜トランジスタ、アレイ基板、表示装置、及び薄膜トランジスタの製造方法
US11289475B2 (en) 2019-01-25 2022-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
DE102021107060A1 (de) 2020-04-03 2021-10-07 Semiconductor Energy Laboratory Co., Ltd. Arylamin-Verbindung, Material für Lochtransportschicht, Material für Lochinjektionsschicht, Licht emittierende Vorrichtung, Licht emittierendes Gerät, elektronisches Gerät und Beleuchtungsvorrichtung

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JP2011119688A (ja) * 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011124557A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP2007299850A (ja) * 2006-04-28 2007-11-15 Seiko Epson Corp 半導体装置の製造方法、電子機器の製造方法、半導体装置および電子機器
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Publication number Publication date
JP2013080918A (ja) 2013-05-02
JP6408640B2 (ja) 2018-10-17
JP6972219B2 (ja) 2021-11-24
US20130075722A1 (en) 2013-03-28
JP2020129665A (ja) 2020-08-27
JP2019016803A (ja) 2019-01-31
WO2013042696A1 (en) 2013-03-28
TWI570923B (zh) 2017-02-11
JP2022009873A (ja) 2022-01-14
KR20140063832A (ko) 2014-05-27
TW201320341A (zh) 2013-05-16
JP6137797B2 (ja) 2017-05-31
JP6689340B2 (ja) 2020-04-28
JP2017152725A (ja) 2017-08-31

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