KR101979130B1 - 금속 도가니에 담겨진 용융물로부터 베타 상의 산화 갈륨 단결정을 성장시키는 방법 - Google Patents

금속 도가니에 담겨진 용융물로부터 베타 상의 산화 갈륨 단결정을 성장시키는 방법 Download PDF

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KR101979130B1
KR101979130B1 KR1020177019011A KR20177019011A KR101979130B1 KR 101979130 B1 KR101979130 B1 KR 101979130B1 KR 1020177019011 A KR1020177019011 A KR 1020177019011A KR 20177019011 A KR20177019011 A KR 20177019011A KR 101979130 B1 KR101979130 B1 KR 101979130B1
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growth
oxygen concentration
temperature
crystal
value
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즈비그뉴 갈라즈카
레인하드 우에커
데트레프 클림
매시아스 비커만
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포슝스베르분드 베를린 에.베.
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020177019011A 2015-01-09 2015-12-16 금속 도가니에 담겨진 용융물로부터 베타 상의 산화 갈륨 단결정을 성장시키는 방법 Active KR101979130B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP15150582.3 2015-01-09
EP15150582.3A EP3042986A1 (en) 2015-01-09 2015-01-09 Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen.
PCT/EP2015/079938 WO2016110385A1 (en) 2015-01-09 2015-12-16 METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE (β-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE

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KR20170110588A KR20170110588A (ko) 2017-10-11
KR101979130B1 true KR101979130B1 (ko) 2019-05-15

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US (1) US11028501B2 (https=)
EP (2) EP3042986A1 (https=)
JP (2) JP2018501184A (https=)
KR (1) KR101979130B1 (https=)
ES (1) ES2746068T3 (https=)
PL (1) PL3242965T3 (https=)
WO (1) WO2016110385A1 (https=)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009007545A (ja) 2007-06-01 2009-01-15 Hitachi Chem Co Ltd シンチレータ用単結晶、シンチレータ用単結晶を製造するための熱処理方法、及びシンチレータ用単結晶の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444728A (en) * 1982-01-21 1984-04-24 Engelhard Corporation Iridium-rhenium crucible
JPS5988398A (ja) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
JP3679097B2 (ja) * 2002-05-31 2005-08-03 株式会社光波 発光素子
JP3822172B2 (ja) * 2003-02-05 2006-09-13 Ｔｄｋ株式会社 単結晶の製造方法
WO2004074556A2 (ja) 2003-02-24 2004-09-02 Waseda University β‐Ｇａ2Ｏ3系単結晶成長方法、薄膜単結晶の成長方法、Ｇａ2Ｏ3系発光素子およびその製造方法
US7595492B2 (en) 2004-12-21 2009-09-29 Hitachi Metals, Ltd. Fluorescent material, a method of manufacturing the fluorescent material, a radiation detector using the fluorescent material, and an X-ray CT scanner
US7947192B2 (en) * 2005-03-30 2011-05-24 Fukuda Crystal Laboratory Gallate single crystal, process for producing the same, piezoelectric device for high-temperature use and piezoelectric sensor for high-temperature use
JP2010150056A (ja) * 2008-12-24 2010-07-08 Showa Denko Kk サファイア単結晶の製造方法
KR101263082B1 (ko) * 2010-11-15 2013-05-09 주식회사 엘지실트론 사파이어 잉곳 성장장치
JP5612216B2 (ja) * 2011-09-08 2014-10-22 株式会社タムラ製作所 結晶積層構造体及びその製造方法
JP5864998B2 (ja) 2011-10-11 2016-02-17 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP5879102B2 (ja) 2011-11-15 2016-03-08 株式会社タムラ製作所 β−Ｇａ２Ｏ３単結晶の製造方法
JP5491483B2 (ja) 2011-11-15 2014-05-14 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP5891028B2 (ja) 2011-12-16 2016-03-22 株式会社タムラ製作所 Ｇａ２Ｏ３系基板の製造方法
JP6097989B2 (ja) 2012-04-24 2017-03-22 並木精密宝石株式会社 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板
JP6134379B2 (ja) 2012-04-24 2017-05-24 フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン インジウム酸化物（Ｉｎ２Ｏ３）単結晶を成長させる方法及び装置並びにインジウム酸化物（Ｉｎ２Ｏ３）
JP2013237591A (ja) 2012-05-16 2013-11-28 Namiki Precision Jewel Co Ltd 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法
JP6085764B2 (ja) 2012-05-23 2017-03-01 並木精密宝石株式会社 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板
JP5756075B2 (ja) 2012-11-07 2015-07-29 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の育成方法
JP6590699B2 (ja) * 2013-01-23 2019-10-16 ユニバーシティ オブ テネシー リサーチ ファウンデーション ガーネット型シンチレータのシンチレーション及び光学特性を改変するための共ドーピング方法
JP5865867B2 (ja) * 2013-05-13 2016-02-17 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の育成方法、並びにβ−Ｇａ２Ｏ３系単結晶基板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009007545A (ja) 2007-06-01 2009-01-15 Hitachi Chem Co Ltd シンチレータ用単結晶、シンチレータ用単結晶を製造するための熱処理方法、及びシンチレータ用単結晶の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Volume 90, Issue 23, May 2007
Morteza Asadian: The Influence of Atmosphere on Oxides Crystal Growth, In: Modern Aspects of Bulk Crystal and Thin Film Preparation, 2012. pages 123-140.*
Zbigniew Galazka et al., On the bulk β-Ga2O3 single crystals grown by the Czochralski method, Journal of Crystal Growth, (2014), Vol. 404, Pages 184-191.*

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ES2746068T3 (es) 2020-03-04
EP3242965A1 (en) 2017-11-15
JP2020164415A (ja) 2020-10-08
JP7046117B2 (ja) 2022-04-01
EP3042986A1 (en) 2016-07-13
KR20170110588A (ko) 2017-10-11
US20170362738A1 (en) 2017-12-21
JP2018501184A (ja) 2018-01-18
PL3242965T3 (pl) 2020-03-31
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EP3242965B1 (en) 2019-06-26
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