PL3242965T3 - SPOSÓB WZROSTU MONOKRYSZTAŁÓW FAZY BETA TLENKU GALU (β-Ga<sub>2</sub>O<sub>3</sub>) Z ROZTOPU ZAWARTEGO W METALOWYM TYGLU POPRZEZ KONTROLĘ CIŚNIENIA CZĄSTKOWEGO O<sub>2</sub> - Google Patents
SPOSÓB WZROSTU MONOKRYSZTAŁÓW FAZY BETA TLENKU GALU (β-Ga<sub>2</sub>O<sub>3</sub>) Z ROZTOPU ZAWARTEGO W METALOWYM TYGLU POPRZEZ KONTROLĘ CIŚNIENIA CZĄSTKOWEGO O<sub>2</sub>Info
- Publication number
- PL3242965T3 PL3242965T3 PL15810626T PL15810626T PL3242965T3 PL 3242965 T3 PL3242965 T3 PL 3242965T3 PL 15810626 T PL15810626 T PL 15810626T PL 15810626 T PL15810626 T PL 15810626T PL 3242965 T3 PL3242965 T3 PL 3242965T3
- Authority
- PL
- Poland
- Prior art keywords
- beta
- ga2o3
- controlling
- partial pressure
- gallium oxide
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title 1
- 229910001195 gallium oxide Inorganic materials 0.000 title 1
- 239000000155 melt Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15150582.3A EP3042986A1 (en) | 2015-01-09 | 2015-01-09 | Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen. |
| PCT/EP2015/079938 WO2016110385A1 (en) | 2015-01-09 | 2015-12-16 | METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE (β-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE |
| EP15810626.0A EP3242965B1 (en) | 2015-01-09 | 2015-12-16 | Method for growing beta phase of gallium oxide (beta-ga2o3) single crystals from the melt contained within a metal crucible by controlling the o2 partial pressure. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3242965T3 true PL3242965T3 (pl) | 2020-03-31 |
Family
ID=52278525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL15810626T PL3242965T3 (pl) | 2015-01-09 | 2015-12-16 | SPOSÓB WZROSTU MONOKRYSZTAŁÓW FAZY BETA TLENKU GALU (β-Ga<sub>2</sub>O<sub>3</sub>) Z ROZTOPU ZAWARTEGO W METALOWYM TYGLU POPRZEZ KONTROLĘ CIŚNIENIA CZĄSTKOWEGO O<sub>2</sub> |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11028501B2 (https=) |
| EP (2) | EP3042986A1 (https=) |
| JP (2) | JP2018501184A (https=) |
| KR (1) | KR101979130B1 (https=) |
| ES (1) | ES2746068T3 (https=) |
| PL (1) | PL3242965T3 (https=) |
| WO (1) | WO2016110385A1 (https=) |
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| JP6899555B2 (ja) * | 2016-11-07 | 2021-07-07 | 日新技研株式会社 | 単結晶製造装置及びその製造方法 |
| JP6824829B2 (ja) * | 2017-06-15 | 2021-02-03 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法 |
| CN108982600B (zh) * | 2018-05-30 | 2021-07-09 | 杨丽娜 | 基于氧化镓/镓酸锌异质结纳米阵列的柔性气敏传感器及其制备方法 |
| CN109183151B (zh) * | 2018-09-20 | 2023-08-18 | 江苏穿越光电科技有限公司 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
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| CN109537055A (zh) * | 2019-01-28 | 2019-03-29 | 山东大学 | 一种半绝缘氧化镓晶体及其制备方法 |
| FR3085535B1 (fr) * | 2019-04-17 | 2021-02-12 | Hosseini Teherani Ferechteh | Procédé de fabrication d’oxyde de gallium de type p par dopage intrinsèque, le film mince obtenu d’oxyde de gallium et son utilisation |
| CN113073388A (zh) | 2019-08-21 | 2021-07-06 | 眉山博雅新材料有限公司 | 一种晶体 |
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| TR202019031A2 (tr) * | 2020-11-25 | 2021-02-22 | Univ Yildiz Teknik | Yüksek kalitede hetero epitaksiyel monoklinik galyum oksit kristali büyütme metodu |
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| CN114561701B (zh) * | 2021-06-07 | 2022-08-19 | 浙江大学杭州国际科创中心 | 一种铸造法生长氧化镓单晶的方法及包含氧化镓单晶的半导体器件 |
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| JP7786712B2 (ja) * | 2021-10-26 | 2025-12-16 | 株式会社ノベルクリスタルテクノロジー | 単結晶育成装置 |
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| EP4219803A1 (en) * | 2022-01-31 | 2023-08-02 | Siltronic AG | Method and apparatus for producing electrically conducting bulk beta-ga2o3 single crystals and electrically conducting bulk beta-ga2o3 single crystal |
| CN114686965B (zh) * | 2022-05-31 | 2022-09-27 | 浙江大学杭州国际科创中心 | 一种无铱区熔法氧化镓晶体的生长装置及生长方法 |
| CN115142130B (zh) * | 2022-06-30 | 2024-02-27 | 同济大学 | 一种微下拉区熔法生长片状氧化镓晶体的方法与生长装置 |
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| KR102692159B1 (ko) * | 2022-12-27 | 2024-08-06 | 주식회사 악셀 | 산화갈륨 단결정 성장용 도가니의 잔멜트 제거방법 |
| KR102728903B1 (ko) * | 2023-11-08 | 2024-11-11 | 한국세라믹기술원 | 산화갈륨 단결정 성장 방법 및 단결정 성장 장치 |
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| WO2025217169A1 (en) * | 2024-04-08 | 2025-10-16 | Luxium Solutions, Llc | Apparatus and method for growth of gadolinium gallium garnet crystal |
| WO2025250905A1 (en) * | 2024-05-31 | 2025-12-04 | Luxium Solutions, Llc | Apparatus and method for growth of gallium oxide crystal with an offcut |
| WO2025263085A1 (ja) * | 2024-06-17 | 2025-12-26 | 住友電気工業株式会社 | ベータ型三酸化二ガリウム単結晶の製造方法、ベータ型三酸化二ガリウム単結晶基板の製造方法、およびベータ型三酸化二ガリウム単結晶基板 |
| CN119413291B (zh) * | 2025-01-06 | 2026-02-17 | 苏州南智芯材科技有限公司 | 晶体生长炉的温度标定方法、测量方法及测量装置 |
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-
2015
- 2015-01-09 EP EP15150582.3A patent/EP3042986A1/en not_active Withdrawn
- 2015-12-16 ES ES15810626T patent/ES2746068T3/es active Active
- 2015-12-16 EP EP15810626.0A patent/EP3242965B1/en active Active
- 2015-12-16 JP JP2017535901A patent/JP2018501184A/ja active Pending
- 2015-12-16 PL PL15810626T patent/PL3242965T3/pl unknown
- 2015-12-16 US US15/541,764 patent/US11028501B2/en active Active
- 2015-12-16 KR KR1020177019011A patent/KR101979130B1/ko active Active
- 2015-12-16 WO PCT/EP2015/079938 patent/WO2016110385A1/en not_active Ceased
-
2020
- 2020-05-25 JP JP2020090661A patent/JP7046117B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ES2746068T3 (es) | 2020-03-04 |
| EP3242965A1 (en) | 2017-11-15 |
| JP2020164415A (ja) | 2020-10-08 |
| KR101979130B1 (ko) | 2019-05-15 |
| JP7046117B2 (ja) | 2022-04-01 |
| EP3042986A1 (en) | 2016-07-13 |
| KR20170110588A (ko) | 2017-10-11 |
| US20170362738A1 (en) | 2017-12-21 |
| JP2018501184A (ja) | 2018-01-18 |
| US11028501B2 (en) | 2021-06-08 |
| EP3242965B1 (en) | 2019-06-26 |
| WO2016110385A1 (en) | 2016-07-14 |
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