CN109183151B - 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 - Google Patents
石墨烯量子点掺杂氧化镓晶体材料及其制备方法 Download PDFInfo
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- CN109183151B CN109183151B CN201811100425.4A CN201811100425A CN109183151B CN 109183151 B CN109183151 B CN 109183151B CN 201811100425 A CN201811100425 A CN 201811100425A CN 109183151 B CN109183151 B CN 109183151B
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- graphene quantum
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- quantum dot
- gallium oxide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Abstract
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CN201811100425.4A CN109183151B (zh) | 2018-09-20 | 2018-09-20 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
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CN201811100425.4A CN109183151B (zh) | 2018-09-20 | 2018-09-20 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
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CN109183151A CN109183151A (zh) | 2019-01-11 |
CN109183151B true CN109183151B (zh) | 2023-08-18 |
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CN111363549B (zh) * | 2020-04-17 | 2023-02-03 | 江苏师范大学 | 一种石墨烯量子点掺杂的上转换激光晶体及其制备方法 |
CN111501089B (zh) * | 2020-04-17 | 2021-07-02 | 江苏师范大学 | 一种混合稀土-过渡元素掺杂的上转换激光晶体及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011184715A (ja) * | 2010-03-05 | 2011-09-22 | Sumitomo Chemical Co Ltd | 酸化亜鉛系透明導電膜形成材料、その製造方法、それを用いたターゲット、および酸化亜鉛系透明導電膜の形成方法 |
CN106868593A (zh) * | 2017-01-06 | 2017-06-20 | 中国科学院上海光学精密机械研究所 | 高电导率的共掺杂氧化镓晶体及其制备方法 |
CN106978626A (zh) * | 2016-01-15 | 2017-07-25 | 中国科学院上海硅酸盐研究所 | 掺锗氧化镓透明导电半导体单晶及其制备方法 |
CN108342775A (zh) * | 2017-01-25 | 2018-07-31 | 中国科学院上海光学精密机械研究所 | 一种钽掺杂β氧化镓晶态材料及其制备方法和应用 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101154347B1 (ko) * | 2009-08-24 | 2012-06-13 | 한양대학교 산학협력단 | 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법 |
JP2014005538A (ja) * | 2012-06-26 | 2014-01-16 | Samsung Corning Precision Materials Co Ltd | 酸化亜鉛系スパッタリングターゲット、その製造方法、およびこれを通じて蒸着された遮断膜を有する薄膜トランジスタ |
KR102290310B1 (ko) * | 2014-11-14 | 2021-08-13 | 삼성전자주식회사 | 전도성 박막 |
EP3042986A1 (en) * | 2015-01-09 | 2016-07-13 | Forschungsverbund Berlin e.V. | Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen. |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011184715A (ja) * | 2010-03-05 | 2011-09-22 | Sumitomo Chemical Co Ltd | 酸化亜鉛系透明導電膜形成材料、その製造方法、それを用いたターゲット、および酸化亜鉛系透明導電膜の形成方法 |
CN106978626A (zh) * | 2016-01-15 | 2017-07-25 | 中国科学院上海硅酸盐研究所 | 掺锗氧化镓透明导电半导体单晶及其制备方法 |
CN106868593A (zh) * | 2017-01-06 | 2017-06-20 | 中国科学院上海光学精密机械研究所 | 高电导率的共掺杂氧化镓晶体及其制备方法 |
CN108342775A (zh) * | 2017-01-25 | 2018-07-31 | 中国科学院上海光学精密机械研究所 | 一种钽掺杂β氧化镓晶态材料及其制备方法和应用 |
Non-Patent Citations (1)
Title |
---|
徐新.氧化镓基纳米材料的制备及其相关性能的研究.硕士电子期刊.2018,(第2018年第5期),第19-22页. * |
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