CN106868593A - 高电导率的共掺杂氧化镓晶体及其制备方法 - Google Patents
高电导率的共掺杂氧化镓晶体及其制备方法 Download PDFInfo
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- CN106868593A CN106868593A CN201710011291.8A CN201710011291A CN106868593A CN 106868593 A CN106868593 A CN 106868593A CN 201710011291 A CN201710011291 A CN 201710011291A CN 106868593 A CN106868593 A CN 106868593A
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- gallium oxide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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Abstract
Description
实施例 | 掺杂离子及浓度 | 电阻率(Ω·cm) | |
实施例1 | |||
实施例2 | |||
实施例3 | |||
实施例4 |
比较例 | 掺杂离子及浓度 | 电阻率(Ω·cm) | |
比较例1 | |||
比较例2 | |||
比较例3 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109183151A (zh) * | 2018-09-20 | 2019-01-11 | 南京同溧晶体材料研究院有限公司 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
CN109183150A (zh) * | 2018-08-31 | 2019-01-11 | 南京同溧晶体材料研究院有限公司 | 高热导率、高电导率的共掺杂氧化镓晶体激光材料及其制备方法 |
CN112420936A (zh) * | 2019-08-21 | 2021-02-26 | Tcl集团股份有限公司 | 纳米材料及其制备方法、应用和量子点发光二极管 |
CN113675314A (zh) * | 2021-08-20 | 2021-11-19 | 厦门理工学院 | 一种uvc-led器件 |
CN114059173A (zh) * | 2022-01-17 | 2022-02-18 | 浙江大学杭州国际科创中心 | 一种制备氧化镓料棒的装置及方法 |
CN114242818A (zh) * | 2021-11-15 | 2022-03-25 | 华南理工大学 | 一种n掺杂增强铟镓硫基可见光探测器及其制备方法 |
WO2022141752A1 (zh) * | 2020-12-31 | 2022-07-07 | 杭州富加镓业科技有限公司 | 一种基于深度学习和提拉法的导电型氧化镓的质量预测方法、制备方法及系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007254174A (ja) * | 2006-03-20 | 2007-10-04 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶及びその製造方法、並びに窒化物半導体用基板及びその製造方法 |
CN103469299A (zh) * | 2013-09-05 | 2013-12-25 | 大连理工大学 | 掺杂氧化镓膜的制备方法及掺杂氧化镓膜 |
CN103782376A (zh) * | 2011-09-08 | 2014-05-07 | 株式会社田村制作所 | Ga2O3系单晶体的供体浓度控制方法 |
CN105008597A (zh) * | 2013-03-04 | 2015-10-28 | 株式会社田村制作所 | Ga2O3系单晶基板及其制造方法 |
CN105603528A (zh) * | 2016-03-04 | 2016-05-25 | 同济大学 | 一种具有热释光性能的氧化镓晶体及其制备方法 |
CN106521625A (zh) * | 2016-12-14 | 2017-03-22 | 山东大学 | 掺四价铬氧化镓晶体及制备方法与应用 |
-
2017
- 2017-01-06 CN CN201710011291.8A patent/CN106868593B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007254174A (ja) * | 2006-03-20 | 2007-10-04 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶及びその製造方法、並びに窒化物半導体用基板及びその製造方法 |
CN103782376A (zh) * | 2011-09-08 | 2014-05-07 | 株式会社田村制作所 | Ga2O3系单晶体的供体浓度控制方法 |
CN105008597A (zh) * | 2013-03-04 | 2015-10-28 | 株式会社田村制作所 | Ga2O3系单晶基板及其制造方法 |
CN103469299A (zh) * | 2013-09-05 | 2013-12-25 | 大连理工大学 | 掺杂氧化镓膜的制备方法及掺杂氧化镓膜 |
CN105603528A (zh) * | 2016-03-04 | 2016-05-25 | 同济大学 | 一种具有热释光性能的氧化镓晶体及其制备方法 |
CN106521625A (zh) * | 2016-12-14 | 2017-03-22 | 山东大学 | 掺四价铬氧化镓晶体及制备方法与应用 |
Non-Patent Citations (4)
Title |
---|
FAN YANG, ET AL.: "Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on a-Al2O3 (0001) by MOCVD", 《APPLIED SURFACE SCIENCE》 * |
N. SUZUKI,ET AL.: "Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal", 《PHYS. STAT. SOL. (C)》 * |
吴音等: "《新型无机非金属材料制备与性能测试表征》", 31 December 2016, 清华大学出版社 * |
张小桃等: "光学浮区法生长掺锡氧化镓单晶及性能研究", 《人工晶体学报》 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109183150A (zh) * | 2018-08-31 | 2019-01-11 | 南京同溧晶体材料研究院有限公司 | 高热导率、高电导率的共掺杂氧化镓晶体激光材料及其制备方法 |
CN109183151A (zh) * | 2018-09-20 | 2019-01-11 | 南京同溧晶体材料研究院有限公司 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
CN109183151B (zh) * | 2018-09-20 | 2023-08-18 | 江苏穿越光电科技有限公司 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
CN112420936A (zh) * | 2019-08-21 | 2021-02-26 | Tcl集团股份有限公司 | 纳米材料及其制备方法、应用和量子点发光二极管 |
CN112420936B (zh) * | 2019-08-21 | 2021-12-07 | Tcl科技集团股份有限公司 | 纳米材料及其制备方法、应用和量子点发光二极管 |
WO2022141752A1 (zh) * | 2020-12-31 | 2022-07-07 | 杭州富加镓业科技有限公司 | 一种基于深度学习和提拉法的导电型氧化镓的质量预测方法、制备方法及系统 |
US12024790B2 (en) | 2020-12-31 | 2024-07-02 | Hangzhou Fujia Gallium Technology Co. Ltd. | Quality prediction method, preparation method and system of conductive gallium oxide based on deep learning and Czochralski method |
CN113675314A (zh) * | 2021-08-20 | 2021-11-19 | 厦门理工学院 | 一种uvc-led器件 |
CN114242818A (zh) * | 2021-11-15 | 2022-03-25 | 华南理工大学 | 一种n掺杂增强铟镓硫基可见光探测器及其制备方法 |
CN114242818B (zh) * | 2021-11-15 | 2024-03-22 | 华南理工大学 | 一种n掺杂增强铟镓硫基可见光探测器及其制备方法 |
CN114059173A (zh) * | 2022-01-17 | 2022-02-18 | 浙江大学杭州国际科创中心 | 一种制备氧化镓料棒的装置及方法 |
CN114059173B (zh) * | 2022-01-17 | 2022-04-01 | 浙江大学杭州国际科创中心 | 一种制备氧化镓料棒的装置及方法 |
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Effective date of registration: 20210428 Address after: 311421 Room 301, building 23, No.68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Fujia gallium Technology Co.,Ltd. Address before: 311421 8th floor, building 23, No.68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee before: Hangzhou Zhongke Shenguang Technology Co.,Ltd. |