CN106868593B - 高电导率的共掺杂氧化镓晶体及其制备方法 - Google Patents
高电导率的共掺杂氧化镓晶体及其制备方法 Download PDFInfo
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- CN106868593B CN106868593B CN201710011291.8A CN201710011291A CN106868593B CN 106868593 B CN106868593 B CN 106868593B CN 201710011291 A CN201710011291 A CN 201710011291A CN 106868593 B CN106868593 B CN 106868593B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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Abstract
Description
实施例 | 掺杂离子及浓度 | 载流子浓度(cm<sup>–3</sup>) | 电阻率(Ω·cm) |
实施例1 | 0.005mol%SnO<sub>2</sub>+10mol%In<sub>2</sub>O<sub>3</sub> | 3.91×10<sup>18</sup> | 3.35×10<sup>-2</sup> |
实施例2 | 1mol%SnO<sub>2</sub>+10mol%In<sub>2</sub>O<sub>3</sub> | 5.00×10<sup>19</sup> | 5.50×10<sup>-3</sup> |
实施例3 | 1mol%SnO<sub>2</sub>+20mol%In<sub>2</sub>O<sub>3</sub> | 6.53×10<sup>19</sup> | 4.73×10<sup>-3</sup> |
实施例4 | 1mol%SnO<sub>2</sub>+30mol%In<sub>2</sub>O<sub>3</sub> | 6.94×10<sup>19</sup> | 3.12×10<sup>-3</sup> |
比较例 | 掺杂离子及浓度 | 载流子浓度(cm<sup>–3</sup>) | 电阻率(Ω·cm) |
比较例1 | 0.005mol%SnO<sub>2</sub> | 8.52×10<sup>17</sup> | 5.61×10<sup>-1</sup> |
比较例2 | 1mol%SnO<sub>2</sub> | 1.48×10<sup>18</sup> | 4.14×10<sup>-2</sup> |
比较例3 | 10mol%In<sub>2</sub>O<sub>3</sub> | 2.15×10<sup>18</sup> | 4.76×10<sup>-2</sup> |
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CN109183150A (zh) * | 2018-08-31 | 2019-01-11 | 南京同溧晶体材料研究院有限公司 | 高热导率、高电导率的共掺杂氧化镓晶体激光材料及其制备方法 |
CN109183151B (zh) * | 2018-09-20 | 2023-08-18 | 江苏穿越光电科技有限公司 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
CN112420936B (zh) * | 2019-08-21 | 2021-12-07 | Tcl科技集团股份有限公司 | 纳米材料及其制备方法、应用和量子点发光二极管 |
CN112863620A (zh) | 2020-12-31 | 2021-05-28 | 杭州富加镓业科技有限公司 | 一种基于深度学习和提拉法的导电型氧化镓的质量预测方法、制备方法及系统 |
CN113675314A (zh) * | 2021-08-20 | 2021-11-19 | 厦门理工学院 | 一种uvc-led器件 |
CN114242818B (zh) * | 2021-11-15 | 2024-03-22 | 华南理工大学 | 一种n掺杂增强铟镓硫基可见光探测器及其制备方法 |
CN114059173B (zh) * | 2022-01-17 | 2022-04-01 | 浙江大学杭州国际科创中心 | 一种制备氧化镓料棒的装置及方法 |
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JP2007254174A (ja) * | 2006-03-20 | 2007-10-04 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶及びその製造方法、並びに窒化物半導体用基板及びその製造方法 |
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