CN109183151A - 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 - Google Patents
石墨烯量子点掺杂氧化镓晶体材料及其制备方法 Download PDFInfo
- Publication number
- CN109183151A CN109183151A CN201811100425.4A CN201811100425A CN109183151A CN 109183151 A CN109183151 A CN 109183151A CN 201811100425 A CN201811100425 A CN 201811100425A CN 109183151 A CN109183151 A CN 109183151A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- graphene quantum
- preparation
- gallium oxide
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811100425.4A CN109183151B (zh) | 2018-09-20 | 2018-09-20 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811100425.4A CN109183151B (zh) | 2018-09-20 | 2018-09-20 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109183151A true CN109183151A (zh) | 2019-01-11 |
CN109183151B CN109183151B (zh) | 2023-08-18 |
Family
ID=64908909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811100425.4A Active CN109183151B (zh) | 2018-09-20 | 2018-09-20 | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109183151B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111363549A (zh) * | 2020-04-17 | 2020-07-03 | 江苏师范大学 | 一种石墨烯量子点掺杂的上转换激光晶体及其制备方法 |
CN111501089A (zh) * | 2020-04-17 | 2020-08-07 | 江苏师范大学 | 一种混合稀土-过渡元素掺杂的上转换激光晶体及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011184715A (ja) * | 2010-03-05 | 2011-09-22 | Sumitomo Chemical Co Ltd | 酸化亜鉛系透明導電膜形成材料、その製造方法、それを用いたターゲット、および酸化亜鉛系透明導電膜の形成方法 |
US20120161106A1 (en) * | 2009-08-24 | 2012-06-28 | Industry-University Cooperation Foundation, Hanyang University | Photodetector using a graphene thin film and nanoparticles, and method for producing the same |
US20130341181A1 (en) * | 2012-06-26 | 2013-12-26 | Samsung Display Co., Ltd. | Zinc oxide-based sputtering target, method of manufacturing the same, and thin-film transistor having barrier layer deposited using the same |
US20160141067A1 (en) * | 2014-11-14 | 2016-05-19 | Samsung Electronics Co., Ltd. | Electrically conductive thin films |
CN106868593A (zh) * | 2017-01-06 | 2017-06-20 | 中国科学院上海光学精密机械研究所 | 高电导率的共掺杂氧化镓晶体及其制备方法 |
CN106978626A (zh) * | 2016-01-15 | 2017-07-25 | 中国科学院上海硅酸盐研究所 | 掺锗氧化镓透明导电半导体单晶及其制备方法 |
US20170362738A1 (en) * | 2015-01-09 | 2017-12-21 | Forschungsverbund Berlin E.V. | METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE ([beta]-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE |
CN108342775A (zh) * | 2017-01-25 | 2018-07-31 | 中国科学院上海光学精密机械研究所 | 一种钽掺杂β氧化镓晶态材料及其制备方法和应用 |
-
2018
- 2018-09-20 CN CN201811100425.4A patent/CN109183151B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120161106A1 (en) * | 2009-08-24 | 2012-06-28 | Industry-University Cooperation Foundation, Hanyang University | Photodetector using a graphene thin film and nanoparticles, and method for producing the same |
JP2011184715A (ja) * | 2010-03-05 | 2011-09-22 | Sumitomo Chemical Co Ltd | 酸化亜鉛系透明導電膜形成材料、その製造方法、それを用いたターゲット、および酸化亜鉛系透明導電膜の形成方法 |
US20130341181A1 (en) * | 2012-06-26 | 2013-12-26 | Samsung Display Co., Ltd. | Zinc oxide-based sputtering target, method of manufacturing the same, and thin-film transistor having barrier layer deposited using the same |
US20160141067A1 (en) * | 2014-11-14 | 2016-05-19 | Samsung Electronics Co., Ltd. | Electrically conductive thin films |
US20170362738A1 (en) * | 2015-01-09 | 2017-12-21 | Forschungsverbund Berlin E.V. | METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE ([beta]-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE |
CN106978626A (zh) * | 2016-01-15 | 2017-07-25 | 中国科学院上海硅酸盐研究所 | 掺锗氧化镓透明导电半导体单晶及其制备方法 |
CN106868593A (zh) * | 2017-01-06 | 2017-06-20 | 中国科学院上海光学精密机械研究所 | 高电导率的共掺杂氧化镓晶体及其制备方法 |
CN108342775A (zh) * | 2017-01-25 | 2018-07-31 | 中国科学院上海光学精密机械研究所 | 一种钽掺杂β氧化镓晶态材料及其制备方法和应用 |
Non-Patent Citations (1)
Title |
---|
徐新: "氧化镓基纳米材料的制备及其相关性能的研究" * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111363549A (zh) * | 2020-04-17 | 2020-07-03 | 江苏师范大学 | 一种石墨烯量子点掺杂的上转换激光晶体及其制备方法 |
CN111501089A (zh) * | 2020-04-17 | 2020-08-07 | 江苏师范大学 | 一种混合稀土-过渡元素掺杂的上转换激光晶体及其制备方法 |
CN111501089B (zh) * | 2020-04-17 | 2021-07-02 | 江苏师范大学 | 一种混合稀土-过渡元素掺杂的上转换激光晶体及其制备方法 |
CN111363549B (zh) * | 2020-04-17 | 2023-02-03 | 江苏师范大学 | 一种石墨烯量子点掺杂的上转换激光晶体及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109183151B (zh) | 2023-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106868593B (zh) | 高电导率的共掺杂氧化镓晶体及其制备方法 | |
CN110194718B (zh) | 一种高度稳定铅基有机-无机杂化钙钛矿纳米片制备方法 | |
JP2011190127A (ja) | 酸化ガリウム単結晶及びその製造方法 | |
CN109183151A (zh) | 石墨烯量子点掺杂氧化镓晶体材料及其制备方法 | |
CN110325671A (zh) | 掺杂氧化镓晶态材料及其制备方法和应用 | |
CN108767050A (zh) | 基于氧化亚铜/氧化镓pn结的柔性紫外光电探测器及其制备方法 | |
CN101538062B (zh) | 一种纳米ZnO半导体结阵列及其制备方法 | |
CN109273977A (zh) | 一种石墨烯量子点掺杂氧化镓晶体固体激光器 | |
CN108342775B (zh) | 一种钽掺杂β氧化镓晶态材料及其制备方法和应用 | |
CN109183152A (zh) | 基于钛掺杂石墨烯量子点的氧化镓晶体材料及其制备方法 | |
CN106276922B (zh) | 一种交叉垂直SiO2纳米棒及其制备方法 | |
Kim et al. | Structural, luminescent, and NO 2 sensing properties of SnO 2-core/V 2 O 5-shell nanorods | |
Ge et al. | Growth and thermal properties of Co2+: LaMgAl11O19 crystal | |
CN109208079A (zh) | 一种钙铝石型半导体材料的制备方法 | |
KR101298026B1 (ko) | 태양전지 광활성층의 제조방법 | |
CN114086254A (zh) | 一种Ga2O3单晶及其制备方法 | |
CN105603527B (zh) | 一种氧化锌纳米单晶的制备方法 | |
CN103966570A (zh) | 单晶In2Te3纳米线及其制备以及准一维In2Te3纳米结构的宽谱光探测器及其制备 | |
CN109346914A (zh) | 一种新型石墨烯量子点掺杂氧化镓晶体固体激光器 | |
CN107151000A (zh) | 硒化锌空心微米球的制备方法 | |
CN109301688A (zh) | 一种基于钛掺杂石墨烯量子点的氧化镓晶体固体激光器 | |
CN112625679A (zh) | 一种全无机卤素钙钛矿纳米线的异质结及其制备方法 | |
CN109244813A (zh) | 一种基于钛掺杂石墨烯量子点的氧化镓晶体的大功率固体激光器 | |
Vasyltsiv et al. | Microdefects and electrical properties of β-Ga2O3 and β-Ga2O3: Mg crystals grown by floating zone technique | |
Gasparotto et al. | Novel route for fabrication of ZnO nanorods-Au nanoparticles hybrids directly supported on substrate and their application as gas sensors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230629 Address after: Room A06, Zhongchuang District, Xingang Maker Space, Building B1, Huizhi Science and Technology Park, No. 8 Hengtai Road, Nanjing Economic and Technological Development Zone, Jiangsu Province, 210000 Applicant after: NANJING AILIKESI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 210000 No.22 Jingang Road, Dongping Town, Lishui District, Nanjing, Jiangsu Province Applicant before: NANJING TONGLI CRYSTAL MATERIAL RESEARCH INSTITUTE Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230725 Address after: 221000 Plant 6, Precision Manufacturing Park, Suining Economic Development Zone, Xuzhou City, Jiangsu Province Applicant after: Jiangsu Chuandu Optoelectronic Technology Co.,Ltd. Address before: 710000 Room 31401, Unit 3, Unit 14, Jiatian International Building No. 1, 216 Taibai South Road, Yanta District, Xi'an City, Shaanxi Province Applicant before: Xi'an Crossing Photoelectric Technology Co.,Ltd. Effective date of registration: 20230725 Address after: 710000 Room 31401, Unit 3, Unit 14, Jiatian International Building No. 1, 216 Taibai South Road, Yanta District, Xi'an City, Shaanxi Province Applicant after: Xi'an Crossing Photoelectric Technology Co.,Ltd. Address before: Room A06, Zhongchuang District, Xingang Maker Space, Building B1, Huizhi Science and Technology Park, No. 8 Hengtai Road, Nanjing Economic and Technological Development Zone, Jiangsu Province, 210000 Applicant before: NANJING AILIKESI ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |