KR101961847B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR101961847B1
KR101961847B1 KR1020120034833A KR20120034833A KR101961847B1 KR 101961847 B1 KR101961847 B1 KR 101961847B1 KR 1020120034833 A KR1020120034833 A KR 1020120034833A KR 20120034833 A KR20120034833 A KR 20120034833A KR 101961847 B1 KR101961847 B1 KR 101961847B1
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electrode layer
film
oxide semiconductor
insulating film
semiconductor layer
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KR20120114169A (ko
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유헤이 사토
케이지 사토
도시나리 사사키
테츠노리 마루야마
아츠오 이소베
츠토무 무라카와
사치아키 테즈카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020120034833A 2011-04-06 2012-04-04 반도체 장치의 제작 방법 Active KR101961847B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-084389 2011-04-06
JP2011084389 2011-04-06

Related Child Applications (1)

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KR1020190031004A Division KR20190032330A (ko) 2011-04-06 2019-03-19 반도체 장치의 제작 방법

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KR20120114169A KR20120114169A (ko) 2012-10-16
KR101961847B1 true KR101961847B1 (ko) 2019-03-25

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KR1020190031004A Ceased KR20190032330A (ko) 2011-04-06 2019-03-19 반도체 장치의 제작 방법

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US (2) US9960278B2 (https=)
JP (2) JP5981753B2 (https=)
KR (2) KR101961847B1 (https=)
CN (2) CN107424927B (https=)
TW (2) TWI632684B (https=)

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JP6498967B2 (ja) * 2015-03-10 2019-04-10 東ソー・ファインケム株式会社 パッシベーション膜の製造方法、パッシベーション膜、それを用いた太陽電池素子
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6725335B2 (ja) 2016-06-20 2020-07-15 株式会社ジャパンディスプレイ 半導体装置
JP6751613B2 (ja) * 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
JP6736430B2 (ja) * 2016-09-05 2020-08-05 株式会社ジャパンディスプレイ 半導体装置
JP7022592B2 (ja) * 2018-01-11 2022-02-18 株式会社ジャパンディスプレイ 表示装置
CN119092554A (zh) 2018-10-10 2024-12-06 株式会社半导体能源研究所 半导体装置
US11121263B2 (en) 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP2021150524A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置
CN111403352A (zh) * 2020-03-24 2020-07-10 长江存储科技有限责任公司 一种三维存储器、cmos晶体管及其制造方法
US20230309359A1 (en) * 2020-09-08 2023-09-28 Sony Semiconductor Solutions Corporation Display device, light-emitting device, and electronic apparatus
JP2024053987A (ja) * 2022-10-04 2024-04-16 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

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