KR101867955B1 - 패키지 온 패키지 장치 및 이의 제조 방법 - Google Patents

패키지 온 패키지 장치 및 이의 제조 방법 Download PDF

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KR101867955B1
KR101867955B1 KR1020120038268A KR20120038268A KR101867955B1 KR 101867955 B1 KR101867955 B1 KR 101867955B1 KR 1020120038268 A KR1020120038268 A KR 1020120038268A KR 20120038268 A KR20120038268 A KR 20120038268A KR 101867955 B1 KR101867955 B1 KR 101867955B1
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South Korea
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package
sealing film
solder bump
connection hole
semiconductor package
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Korean (ko)
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KR20130116100A (ko
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임충빈
유혜정
박태성
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삼성전자주식회사
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Priority to KR1020120038268A priority Critical patent/KR101867955B1/ko
Priority to US13/734,393 priority patent/US8779606B2/en
Priority to DE102013103301.6A priority patent/DE102013103301B4/de
Priority to TW102112261A priority patent/TWI611524B/zh
Priority to JP2013081768A priority patent/JP6173753B2/ja
Publication of KR20130116100A publication Critical patent/KR20130116100A/ko
Priority to US14/288,440 priority patent/US9245867B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/28—Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/291—Configurations of stacked chips characterised by containers, encapsulations, or other housings for the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1020120038268A 2012-04-13 2012-04-13 패키지 온 패키지 장치 및 이의 제조 방법 Active KR101867955B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020120038268A KR101867955B1 (ko) 2012-04-13 2012-04-13 패키지 온 패키지 장치 및 이의 제조 방법
US13/734,393 US8779606B2 (en) 2012-04-13 2013-01-04 Package-on-package electronic devices including sealing layers and related methods of forming the same
DE102013103301.6A DE102013103301B4 (de) 2012-04-13 2013-04-03 Elektronische Gehäuse-auf-Gehäuse-Vorrichtungen mit Abdichtungsschichten und Verfahren zum Herstellen derselben
TW102112261A TWI611524B (zh) 2012-04-13 2013-04-08 包含密封層之堆疊封裝電子元件及其相關製造方法
JP2013081768A JP6173753B2 (ja) 2012-04-13 2013-04-10 密封膜を含むパッケージオンパッケージ電子装置及びその製造方法
US14/288,440 US9245867B2 (en) 2012-04-13 2014-05-28 Package-on-package electronic devices including sealing layers and related methods of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120038268A KR101867955B1 (ko) 2012-04-13 2012-04-13 패키지 온 패키지 장치 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
KR20130116100A KR20130116100A (ko) 2013-10-23
KR101867955B1 true KR101867955B1 (ko) 2018-06-15

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Country Status (4)

Country Link
US (2) US8779606B2 (https=)
JP (1) JP6173753B2 (https=)
KR (1) KR101867955B1 (https=)
TW (1) TWI611524B (https=)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9171792B2 (en) * 2011-02-28 2015-10-27 Advanced Semiconductor Engineering, Inc. Semiconductor device packages having a side-by-side device arrangement and stacking functionality
US8963311B2 (en) 2012-09-26 2015-02-24 Apple Inc. PoP structure with electrically insulating material between packages
US9263377B2 (en) * 2012-11-08 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. POP structures with dams encircling air gaps and methods for forming the same
US9048222B2 (en) 2013-03-06 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating interconnect structure for package-on-package devices
KR20140119522A (ko) * 2013-04-01 2014-10-10 삼성전자주식회사 패키지-온-패키지 구조를 갖는 반도체 패키지
KR20140130920A (ko) * 2013-05-02 2014-11-12 삼성전자주식회사 패키지 온 패키지 장치 및 이의 제조 방법
TWI533421B (zh) * 2013-06-14 2016-05-11 日月光半導體製造股份有限公司 半導體封裝結構及半導體製程
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US9034696B2 (en) * 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
US8883563B1 (en) * 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US10153180B2 (en) * 2013-10-02 2018-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor bonding structures and methods
FR3011978A1 (fr) * 2013-10-15 2015-04-17 St Microelectronics Grenoble 2 Systeme electronique comprenant des dispositifs electroniques empiles comprenant des puces de circuits integres
KR102229202B1 (ko) * 2013-11-07 2021-03-17 삼성전자주식회사 트렌치 형태의 오프닝을 갖는 반도체 패키지 및 그 제조방법
US9583420B2 (en) 2015-01-23 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufactures
US9613933B2 (en) 2014-03-05 2017-04-04 Intel Corporation Package structure to enhance yield of TMI interconnections
US9281297B2 (en) 2014-03-07 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Solution for reducing poor contact in info packages
US9607964B2 (en) * 2014-03-28 2017-03-28 Intel Corporation Method and materials for warpage thermal and interconnect solutions
US9831206B2 (en) * 2014-03-28 2017-11-28 Intel Corporation LPS solder paste based low cost fine pitch pop interconnect solutions
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US9449947B2 (en) 2014-07-01 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package for thermal dissipation
US9543170B2 (en) 2014-08-22 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
US10319607B2 (en) * 2014-08-22 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package structure with organic interposer
US9337135B2 (en) 2014-10-08 2016-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Pop joint through interposer
KR101619460B1 (ko) * 2014-11-18 2016-05-11 주식회사 프로텍 적층형 반도체 패키지의 제조장치
US9843164B2 (en) 2015-01-27 2017-12-12 TeraDiode, Inc. Solder sealing in high-power laser devices
KR101640341B1 (ko) * 2015-02-04 2016-07-15 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US10032704B2 (en) * 2015-02-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking by adjusting opening size in pop packages
US9536808B1 (en) * 2015-06-16 2017-01-03 Macronix International Co., Ltd. Photo pattern method to increase via etching rate
US9679873B2 (en) 2015-06-18 2017-06-13 Qualcomm Incorporated Low profile integrated circuit (IC) package comprising a plurality of dies
US10231338B2 (en) 2015-06-24 2019-03-12 Intel Corporation Methods of forming trenches in packages structures and structures formed thereby
KR102457119B1 (ko) * 2015-09-14 2022-10-24 삼성전자주식회사 반도체 패키지의 제조 방법
US9735131B2 (en) 2015-11-10 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-stack package-on-package structures
JP2017112325A (ja) * 2015-12-18 2017-06-22 Ｔｏｗａ株式会社 半導体装置及びその製造方法
US9773764B2 (en) * 2015-12-22 2017-09-26 Intel Corporation Solid state device miniaturization
US9842829B2 (en) * 2016-04-29 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure and method for forming the same
US9881903B2 (en) * 2016-05-31 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package structure with epoxy flux residue
US10050024B2 (en) * 2016-06-17 2018-08-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method of the same
US9991219B2 (en) 2016-06-23 2018-06-05 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package module
US10269720B2 (en) * 2016-11-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out packaging
TWI723140B (zh) 2016-08-10 2021-04-01 台灣積體電路製造股份有限公司 經封裝裝置以及形成經封裝裝置的方法
WO2018123699A1 (ja) * 2016-12-27 2018-07-05 株式会社村田製作所 高周波モジュール
US9991206B1 (en) * 2017-04-05 2018-06-05 Powertech Technology Inc. Package method including forming electrical paths through a mold layer
KR20180117238A (ko) * 2017-04-18 2018-10-29 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US10510709B2 (en) * 2017-04-20 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semicondcutor package and manufacturing method thereof
US10276536B2 (en) * 2017-04-28 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of chip package with fan-out structure
US10269587B2 (en) * 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit packages and methods of forming same
DE102017124076B4 (de) * 2017-06-30 2021-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrierte Schaltungs-Packages und Verfahren zu deren Bildung
US10438930B2 (en) * 2017-06-30 2019-10-08 Intel Corporation Package on package thermal transfer systems and methods
KR20190004964A (ko) * 2017-07-05 2019-01-15 삼성전자주식회사 반도체 패키지
DE102018111445B4 (de) 2017-07-17 2022-08-11 Samsung Electronics Co., Ltd. Verfahren zur Herstellung eines Halbleitergehäuses
KR102086364B1 (ko) * 2018-03-05 2020-03-09 삼성전자주식회사 반도체 패키지
KR102448248B1 (ko) * 2018-05-24 2022-09-27 삼성전자주식회사 Pop형 반도체 패키지 및 그 제조 방법
US11075151B2 (en) * 2018-06-29 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out package with controllable standoff
US11081369B2 (en) * 2019-02-25 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and manufacturing method thereof
US11063019B2 (en) * 2019-07-17 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure, chip structure and method of fabricating the same
KR102747644B1 (ko) * 2019-07-22 2024-12-27 삼성전자주식회사 반도체 패키지 및 그 제조 방법
KR102698698B1 (ko) 2019-08-05 2024-08-27 삼성전자주식회사 반도체 패키지 장치
US11410968B2 (en) 2019-10-18 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
KR102849154B1 (ko) * 2020-04-10 2025-08-21 삼성전자주식회사 반도체 패키지
KR102400533B1 (ko) * 2020-08-12 2022-05-19 삼성전기주식회사 전자 소자 모듈 및 이의 제조방법
KR102836900B1 (ko) 2020-10-12 2025-07-24 삼성전자주식회사 반도체 패키지 및 그 제조방법
CN113035826B (zh) * 2021-02-23 2022-08-19 青岛歌尔智能传感器有限公司 封装模组、封装模组的制作方法及电子设备
US11646255B2 (en) * 2021-03-18 2023-05-09 Taiwan Semiconductor Manufacturing Company Limited Chip package structure including a silicon substrate interposer and methods for forming the same
US20230369232A1 (en) * 2022-05-11 2023-11-16 Intel Corporation Molded interconnect memory on package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110069681A (ko) * 2009-12-17 2011-06-23 삼성전자주식회사 반도체 패키지들, 그들의 적층 구조와 그 제조 방법들
KR20110104430A (ko) * 2010-03-16 2011-09-22 히다치 가세고교 가부시끼가이샤 반도체 밀봉 충전용 에폭시 수지 조성물, 반도체 장치, 및 그의 제조 방법
KR20110114980A (ko) * 2010-04-14 2011-10-20 주식회사 하이닉스반도체 스택 패키지
KR20120031697A (ko) * 2010-09-27 2012-04-04 삼성전자주식회사 패키지 적층 구조 및 그 제조 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261367B1 (en) * 1999-05-10 2001-07-17 Nordson Corporation Method and apparatus for dispensing liquid material
JP2001244636A (ja) * 2000-03-01 2001-09-07 Ibiden Co Ltd プリント配線板
JP2003198086A (ja) * 2001-12-25 2003-07-11 Fujikura Ltd 回路基板及び積層回路基板並びにそれらの製造方法
US20050048700A1 (en) * 2003-09-02 2005-03-03 Slawomir Rubinsztajn No-flow underfill material having low coefficient of thermal expansion and good solder ball fluxing performance
KR100617071B1 (ko) 2002-12-23 2006-08-30 앰코 테크놀로지 코리아 주식회사 적층형 반도체 패키지 및 그 제조방법
JP2006295119A (ja) * 2005-03-17 2006-10-26 Matsushita Electric Ind Co Ltd 積層型半導体装置
KR20070051165A (ko) 2005-11-14 2007-05-17 삼성전자주식회사 프리 솔더 범프를 갖는 반도체 패키지와, 그를 이용한 적층패키지 및 그의 제조 방법
JP5215605B2 (ja) 2007-07-17 2013-06-19 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP2009302505A (ja) * 2008-05-15 2009-12-24 Panasonic Corp 半導体装置、および半導体装置の製造方法
WO2010052871A1 (ja) 2008-11-06 2010-05-14 住友ベークライト株式会社 電子装置の製造方法および電子装置
JP5259383B2 (ja) * 2008-12-26 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
US20120046364A1 (en) * 2009-02-10 2012-02-23 Metabasis Therapeutics, Inc. Novel Sulfonic Acid-Containing Thyromimetics, and Methods for Their Use
KR20100095268A (ko) * 2009-02-20 2010-08-30 삼성전자주식회사 반도체 패키지 및 그 제조 방법
KR101583354B1 (ko) 2009-06-01 2016-01-07 삼성전자주식회사 반도체 소자 패키지의 형성방법
US8508954B2 (en) * 2009-12-17 2013-08-13 Samsung Electronics Co., Ltd. Systems employing a stacked semiconductor package
US8299595B2 (en) 2010-03-18 2012-10-30 Stats Chippac Ltd. Integrated circuit package system with package stacking and method of manufacture thereof
KR101855294B1 (ko) * 2010-06-10 2018-05-08 삼성전자주식회사 반도체 패키지
US8080445B1 (en) * 2010-09-07 2011-12-20 Stats Chippac, Ltd. Semiconductor device and method of forming WLP with semiconductor die embedded within penetrable encapsulant between TSV interposers
WO2012035972A1 (ja) * 2010-09-17 2012-03-22 住友ベークライト株式会社 半導体パッケージおよび半導体装置
KR101740483B1 (ko) * 2011-05-02 2017-06-08 삼성전자 주식회사 고정 부재 및 할로겐-프리 패키지간 연결부를 포함하는 적층 패키지
JP5547703B2 (ja) * 2011-10-17 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20130050134A (ko) * 2011-11-07 2013-05-15 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US8658464B2 (en) * 2011-11-16 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mold chase design for package-on-package applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110069681A (ko) * 2009-12-17 2011-06-23 삼성전자주식회사 반도체 패키지들, 그들의 적층 구조와 그 제조 방법들
KR20110104430A (ko) * 2010-03-16 2011-09-22 히다치 가세고교 가부시끼가이샤 반도체 밀봉 충전용 에폭시 수지 조성물, 반도체 장치, 및 그의 제조 방법
KR20110114980A (ko) * 2010-04-14 2011-10-20 주식회사 하이닉스반도체 스택 패키지
KR20120031697A (ko) * 2010-09-27 2012-04-04 삼성전자주식회사 패키지 적층 구조 및 그 제조 방법

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US9245867B2 (en) 2016-01-26
US8779606B2 (en) 2014-07-15
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