KR101848983B1 - 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 - Google Patents
유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 Download PDFInfo
- Publication number
- KR101848983B1 KR101848983B1 KR1020157005441A KR20157005441A KR101848983B1 KR 101848983 B1 KR101848983 B1 KR 101848983B1 KR 1020157005441 A KR1020157005441 A KR 1020157005441A KR 20157005441 A KR20157005441 A KR 20157005441A KR 101848983 B1 KR101848983 B1 KR 101848983B1
- Authority
- KR
- South Korea
- Prior art keywords
- photomask
- glass substrate
- thin film
- metal thin
- pattern
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 231
- 239000011521 glass Substances 0.000 title claims abstract description 205
- 238000000034 method Methods 0.000 title claims abstract description 116
- 238000012958 reprocessing Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 claims abstract description 45
- 230000002950 deficient Effects 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 89
- 239000002184 metal Substances 0.000 claims description 88
- 239000010409 thin film Substances 0.000 claims description 87
- 238000011282 treatment Methods 0.000 claims description 66
- 238000005530 etching Methods 0.000 claims description 65
- 239000000243 solution Substances 0.000 claims description 64
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 56
- 239000007864 aqueous solution Substances 0.000 claims description 39
- 238000007689 inspection Methods 0.000 claims description 30
- 230000008929 regeneration Effects 0.000 claims description 25
- 238000011069 regeneration method Methods 0.000 claims description 25
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- 238000004090 dissolution Methods 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 13
- 230000007547 defect Effects 0.000 abstract description 20
- 238000007517 polishing process Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 68
- 239000010408 film Substances 0.000 description 62
- 239000011651 chromium Substances 0.000 description 60
- 229910052804 chromium Inorganic materials 0.000 description 59
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 238000005498 polishing Methods 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 12
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 11
- 229910000423 chromium oxide Inorganic materials 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 11
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- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000011179 visual inspection Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 6
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- 239000002253 acid Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000007942 carboxylates Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000001856 aerosol method Methods 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
- B09B5/00—Operations not covered by a single other subclass or by a single other group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-211636 | 2012-09-26 | ||
JP2012211636 | 2012-09-26 | ||
JPJP-P-2013-116166 | 2013-05-31 | ||
JP2013116166 | 2013-05-31 | ||
PCT/JP2013/075314 WO2014050700A1 (ja) | 2012-09-26 | 2013-09-19 | ガラス再生処理方法および再生ガラス基板とそれを用いたフォトマスクブランクスとフォトマスク |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020177031593A Division KR101963996B1 (ko) | 2012-09-26 | 2013-09-19 | 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20150050557A KR20150050557A (ko) | 2015-05-08 |
KR101848983B1 true KR101848983B1 (ko) | 2018-04-13 |
Family
ID=50388105
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020157005441A KR101848983B1 (ko) | 2012-09-26 | 2013-09-19 | 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 |
KR1020187034398A KR102085058B1 (ko) | 2012-09-26 | 2013-09-19 | 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 |
KR1020177031593A KR101963996B1 (ko) | 2012-09-26 | 2013-09-19 | 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020187034398A KR102085058B1 (ko) | 2012-09-26 | 2013-09-19 | 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 |
KR1020177031593A KR101963996B1 (ko) | 2012-09-26 | 2013-09-19 | 유리 재생 처리 방법 및 재생 유리 기판과 그것을 사용한 포토마스크 블랭크와 포토마스크 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP6256344B2 (ja) |
KR (3) | KR101848983B1 (ja) |
CN (2) | CN109298594B (ja) |
TW (1) | TWI558677B (ja) |
WO (1) | WO2014050700A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104932194A (zh) * | 2015-07-22 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种掩膜板及其制备方法、掩膜板的回收方法 |
CN112404100A (zh) * | 2020-11-03 | 2021-02-26 | 福建晶安光电有限公司 | 一种滤波器基片的回收工艺 |
Citations (3)
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JP2004054285A (ja) * | 2002-07-17 | 2004-02-19 | Hoya Corp | マスクブランクス用ガラス基板、及びマスクブランクス用ガラス基板の製造方法、並びにマスクブランクス、及びマスクブランクスの製造方法、並びに転写マスク、及び転写マスクの製造方法 |
JP2004089807A (ja) * | 2002-08-30 | 2004-03-25 | Central Glass Co Ltd | 洗浄装置および洗浄方法 |
JP2007069339A (ja) | 2005-09-09 | 2007-03-22 | Sharp Corp | 基板表面の薄膜除去方法 |
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JPS514754B1 (ja) * | 1970-10-28 | 1976-02-14 | ||
JPS5988332A (ja) * | 1982-11-08 | 1984-05-22 | Fujitsu Ltd | フオト・マスク基板の再生方法 |
JPS626259A (ja) * | 1985-07-02 | 1987-01-13 | Sharp Corp | フオトマスク基板 |
JPH02102142A (ja) | 1988-10-07 | 1990-04-13 | Sony Corp | 石英製治具の再生方法 |
JPH05143981A (ja) * | 1991-11-25 | 1993-06-11 | Kao Corp | 基板の洗浄方法 |
JPH07230081A (ja) * | 1994-02-17 | 1995-08-29 | Toppan Printing Co Ltd | ガラス基板の回収方法 |
JPH0839025A (ja) * | 1994-07-28 | 1996-02-13 | Olympus Optical Co Ltd | 洗浄方法 |
JPH08151599A (ja) * | 1994-11-30 | 1996-06-11 | Olympus Optical Co Ltd | 仕上げ洗浄用組成物および仕上げ洗浄方法 |
JPH09241684A (ja) * | 1996-03-04 | 1997-09-16 | Olympus Optical Co Ltd | 洗浄組成物及び洗浄方法 |
JPH11172148A (ja) * | 1997-12-12 | 1999-06-29 | Kobe Steel Ltd | 親水性塗料及び親水性基材の製造方法 |
JP4035251B2 (ja) * | 1999-02-03 | 2008-01-16 | 株式会社神戸製鋼所 | 表面親水性を有する基材及びその製造方法 |
KR20010068561A (ko) * | 2000-01-06 | 2001-07-23 | 윤여선 | 마스크 재생방법 |
US20040137828A1 (en) * | 2002-07-17 | 2004-07-15 | Hoya Corporation | Glass substrate for a mask blank, method of producing a glass substrate for a mask blank, mask blank, method of producing the mask blank, transfer mask, and method of producing a transfer mask |
DE102004014954A1 (de) * | 2003-03-27 | 2005-03-10 | Hoya Corp | Verfahren zur Herstellung eines Glassubstrats für einen Maskenrohling und Verfahren zur Herstellung eines Maskenrohlings |
JP4497909B2 (ja) * | 2003-12-16 | 2010-07-07 | Hoya株式会社 | マスクブランクス用ガラス基板の再生方法、マスクブランクスの製造方法及び転写用マスクの製造方法 |
CN102681332B (zh) * | 2006-05-30 | 2015-03-11 | Hoya株式会社 | 抗蚀剂膜剥离方法、掩模基板的制造方法及转印掩模的制造方法 |
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JP2008151916A (ja) * | 2006-12-15 | 2008-07-03 | Shin Etsu Chem Co Ltd | 大型フォトマスク基板のリサイクル方法 |
KR20080076807A (ko) * | 2007-02-14 | 2008-08-20 | 주식회사 코젝스 | 감광성 수지조성물을 이용한 글라스 가공방법 |
MY155533A (en) * | 2008-06-11 | 2015-10-30 | Shinetsu Chemical Co | Polishing agent for synthetic quartz glass substrate |
KR101243545B1 (ko) * | 2008-08-04 | 2013-03-20 | 도판 인사츠 가부시키가이샤 | 유리 기판 재생 장치 |
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JP2004054285A (ja) * | 2002-07-17 | 2004-02-19 | Hoya Corp | マスクブランクス用ガラス基板、及びマスクブランクス用ガラス基板の製造方法、並びにマスクブランクス、及びマスクブランクスの製造方法、並びに転写マスク、及び転写マスクの製造方法 |
JP2004089807A (ja) * | 2002-08-30 | 2004-03-25 | Central Glass Co Ltd | 洗浄装置および洗浄方法 |
JP2007069339A (ja) | 2005-09-09 | 2007-03-22 | Sharp Corp | 基板表面の薄膜除去方法 |
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JPWO2014050700A1 (ja) | 2016-08-22 |
TW201427918A (zh) | 2014-07-16 |
KR101963996B1 (ko) | 2019-03-29 |
CN104620176A (zh) | 2015-05-13 |
CN104620176B (zh) | 2019-02-26 |
JP2018045253A (ja) | 2018-03-22 |
TWI558677B (zh) | 2016-11-21 |
KR20150050557A (ko) | 2015-05-08 |
KR102085058B1 (ko) | 2020-03-05 |
KR20180129996A (ko) | 2018-12-05 |
CN109298594B (zh) | 2021-12-24 |
KR20170125119A (ko) | 2017-11-13 |
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JP6256344B2 (ja) | 2018-01-10 |
WO2014050700A1 (ja) | 2014-04-03 |
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