JP5275275B2 - 基板処理方法、euvマスクの製造方法、euvマスクおよび半導体装置の製造方法 - Google Patents
基板処理方法、euvマスクの製造方法、euvマスクおよび半導体装置の製造方法 Download PDFInfo
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- JP5275275B2 JP5275275B2 JP2010040500A JP2010040500A JP5275275B2 JP 5275275 B2 JP5275275 B2 JP 5275275B2 JP 2010040500 A JP2010040500 A JP 2010040500A JP 2010040500 A JP2010040500 A JP 2010040500A JP 5275275 B2 JP5275275 B2 JP 5275275B2
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- 238000000034 method Methods 0.000 claims description 37
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- 239000007788 liquid Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 26
- 230000001590 oxidative effect Effects 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
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- 230000018109 developmental process Effects 0.000 description 28
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
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- 238000001035 drying Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011146 organic particle Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本実施の形態に係る基板処理方法は、例えば、半導体製造工程(ウエハ工程、露光用マスク製造工程など)や液晶デバイス製造工程のパターン形成の際に用いられる。以下では、基板処理方法を、EUV(Extreme Ultra-Violet)リソグラフィに用いられるEUVマスクの製造処理に適用した場合について説明する。
つぎに、図6を用いてこの発明の第2の実施の形態について説明する。第2の実施の形態では、基板100への現像処理を行う前に、UV照射の代わりに酸化作用のある液体(後述の酸化性液体23)を用いて導電性膜Mを親水化しておく。
Claims (9)
- EUVマスクの形成に用いられるマスク基板として、一方の主面に第1の親水性を有した第1の膜が形成されるとともに他方の主面にレジストが塗布されたマスク基板を、前記レジスト側から露光する露光ステップと、
前記第1の膜の表面を親水化処理し、これにより前記第1の膜の表面を前記第1の親水性よりも大きな第2の親水性にする親水化ステップと、
前記第1の膜の表面が第2の親水性に親水化処理されたマスク基板に対し前記レジストを現像処理する現像ステップと、
を含み、
前記親水化ステップは、前記第1の膜の表面にUV光を照射することによって前記第1の膜の表面を第2の親水性に親水化処理するとともに、前記第1の膜の表面のリンス液に対する接触角が5度以下となるよう前記第1の膜の表面を第2の親水性に親水化処理することを特徴とする基板処理方法。 - EUVマスクの形成に用いられるマスク基板として、一方の主面に第1の親水性を有した第1の膜が形成されるとともに他方の主面にレジストが塗布されたマスク基板を、前記レジスト側から露光する露光ステップと、
前記第1の膜の表面を親水化処理し、これにより前記第1の膜の表面を前記第1の親水性よりも大きな第2の親水性にする親水化ステップと、
前記第1の膜の表面が第2の親水性に親水化処理されたマスク基板に対し前記レジストを現像処理する現像ステップと、
を含むことを特徴とする基板処理方法。 - 前記親水化ステップは、前記第1の膜の表面にUV光を照射することによって前記第1の膜の表面を第2の親水性に親水化処理することを特徴とする請求項2に記載の基板処理方法。
- 前記親水化ステップは、前記第1の膜の表面に酸化性液体を供給することによって前記第1の膜の表面を第2の親水性に親水化処理することを特徴とする請求項2に記載の基板処理方法。
- 前記現像処理の際に行われる前記レジストへの現像液の供給は、前記親水化処理の際に行われる前記第1の膜の表面への酸化性液体の供給と同時に行なわれることを特徴とする請求項4に記載の基板処理方法。
- 前記親水化ステップは、前記第1の膜の表面のリンス液に対する接触角が5度以下となるよう前記第1の膜の表面を第2の親水性に親水化処理することを特徴とする請求項2〜5のいずれか1つに記載の基板処理方法。
- 請求項2乃至6に記載の基板処理方法によって製造されることを特徴とするEUVマスクの製造方法。
- 請求項7に記載のEUVマスクの製造方法によって製造されたことを特徴とするEUVマスク。
- 請求項8に記載のEUVマスクを用いてウエハへのEUV露光を行なうEUV露光ステップを含むことを特徴とする半導体装置の製造方法。
Priority Applications (5)
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JP2010040500A JP5275275B2 (ja) | 2010-02-25 | 2010-02-25 | 基板処理方法、euvマスクの製造方法、euvマスクおよび半導体装置の製造方法 |
TW100104330A TWI438565B (zh) | 2010-02-25 | 2011-02-09 | Substrate processing method, manufacturing method of EUV mask and EUV mask |
KR1020110015905A KR101216797B1 (ko) | 2010-02-25 | 2011-02-23 | 기판 처리 방법, euv 마스크의 제조 방법 및 euv 마스크 |
US13/034,143 US8383298B2 (en) | 2010-02-25 | 2011-02-24 | Substrate processing method, manufacturing method of EUV mask, and EUV mask |
US13/757,877 US8908150B2 (en) | 2010-02-25 | 2013-02-04 | Substrate processing method, manufacturing method of EUV mask, and EUV mask |
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JP2010040500A JP5275275B2 (ja) | 2010-02-25 | 2010-02-25 | 基板処理方法、euvマスクの製造方法、euvマスクおよび半導体装置の製造方法 |
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JP2011176218A JP2011176218A (ja) | 2011-09-08 |
JP2011176218A5 JP2011176218A5 (ja) | 2012-04-26 |
JP5275275B2 true JP5275275B2 (ja) | 2013-08-28 |
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US (2) | US8383298B2 (ja) |
JP (1) | JP5275275B2 (ja) |
KR (1) | KR101216797B1 (ja) |
TW (1) | TWI438565B (ja) |
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JP5703841B2 (ja) * | 2011-02-28 | 2015-04-22 | 凸版印刷株式会社 | 反射型マスク |
JP5932498B2 (ja) * | 2012-06-05 | 2016-06-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法およびマスク |
US8953869B2 (en) * | 2012-06-14 | 2015-02-10 | Kla-Tencor Corporation | Apparatus and methods for inspecting extreme ultra violet reticles |
JP2016136200A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
JP6742748B2 (ja) | 2016-02-17 | 2020-08-19 | 株式会社Screenホールディングス | 現像ユニット、基板処理装置、現像方法および基板処理方法 |
WO2024085089A1 (ja) * | 2022-10-21 | 2024-04-25 | Agc株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 |
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US5928840A (en) * | 1995-11-10 | 1999-07-27 | Matsushita Electric Industrial Co., Ltd. | Patterning material and patterning method |
JPH10258249A (ja) * | 1997-03-19 | 1998-09-29 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
JP3210893B2 (ja) * | 1997-10-21 | 2001-09-25 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
JP2002090981A (ja) * | 2000-09-12 | 2002-03-27 | Mitsubishi Paper Mills Ltd | 露光用マスク材料の処理方法 |
JP3696156B2 (ja) * | 2000-12-26 | 2005-09-14 | 株式会社東芝 | 塗布膜の加熱装置、レジスト膜の処理方法 |
JP4564186B2 (ja) * | 2001-02-16 | 2010-10-20 | 株式会社東芝 | パターン形成方法 |
WO2003080362A1 (fr) * | 2002-03-22 | 2003-10-02 | Mitsubishi Heavy Industries, Ltd. | Procede permettant de regenerer une plaque d'impression lithographique, dispositif de regeneration, imprimante, plaque d'impression lithographique et procede de fabrication associe, et corps de structure stratifiee et procede de fabrication associe |
JP4300930B2 (ja) | 2003-08-07 | 2009-07-22 | 凸版印刷株式会社 | 極限紫外線露光用マスク及びブランク並びにパターン転写方法 |
JP2005210093A (ja) * | 2003-12-25 | 2005-08-04 | Hoya Corp | 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法 |
JP4410076B2 (ja) * | 2004-10-07 | 2010-02-03 | 東京エレクトロン株式会社 | 現像処理装置 |
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KR101308838B1 (ko) | 2005-12-12 | 2013-09-13 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, 및 그 마스크블랭크용 도전막 부착 기판 |
KR101585696B1 (ko) | 2006-12-15 | 2016-01-14 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, 및 그 마스크 블랭크용의 기능막이 형성된 기판 |
TW200921297A (en) * | 2007-09-25 | 2009-05-16 | Renesas Tech Corp | Method and apparatus for manufacturing semiconductor device, and resist material |
JP2009099856A (ja) * | 2007-10-18 | 2009-05-07 | Toshiba Corp | 基板処理方法及び基板処理装置 |
JP5507876B2 (ja) | 2009-04-15 | 2014-05-28 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
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- 2011-02-23 KR KR1020110015905A patent/KR101216797B1/ko active IP Right Grant
- 2011-02-24 US US13/034,143 patent/US8383298B2/en active Active
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US20110207031A1 (en) | 2011-08-25 |
TW201142482A (en) | 2011-12-01 |
TWI438565B (zh) | 2014-05-21 |
JP2011176218A (ja) | 2011-09-08 |
US20130141708A1 (en) | 2013-06-06 |
US8908150B2 (en) | 2014-12-09 |
KR101216797B1 (ko) | 2012-12-28 |
US8383298B2 (en) | 2013-02-26 |
KR20110097681A (ko) | 2011-08-31 |
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