201214024 六、發明說明： 【發明所屬之技術領域】 本發明係關於例如液晶顯示裝置等平板顯示器(Fiat Panel Display:以下稱作FPD)等之製造所使用之再生光罩 用基板之製造方法、再生光罩用基底之製造方法、再生光 罩及其製造方法、與圖案轉印方法。 【先前技術】 例如使用於液晶顯示裝置之TFT(薄膜電晶體）基板係使 用透明基板之第1主表面上形成有含轉印用圖案之膜圖案 之光罩，亦包含其他光罩之使用，經過例如5次〜6次光微 影步驟而製造。另，一般言之，上述光罩之製造所使用之 光罩用基板中，透明基板之第1主表面或第2主表面被研磨 成平坦且平滑。研磨光罩用基板之主表面之方法揭示於專 利文獻1(曰本特開2005-191352號公報）及專利文獻2(曰本 特開2008-151916號公報）中。專利文獻1中記載有使用於 EUV微影之透明基板之研磨方法。又，專利文獻2中記載 有於大型光罩基板之再生利用步驟研磨透明基板之表面之 方法。 【發明内容】 (發明所欲解決之問題） 近年來，上述液晶顯示裝置製造用光罩朝大型化進展。 具體言之’多使用一邊5〇〇mm以上之方形者，尤其最近一 邊1 〇〇〇 mm以上之方形者變得較常見。此係除液晶顯示裝 置本身大型化之外，液晶顯示裝置生產成本下降之要求亦 155307.doc 201214024 提南之故。為提高生產效率，使用大型光罩減少轉印次數 較有效。 又，為進而提高液晶顯示裝置之生產效率，可以丨塊光 罩進行相當於先前之2塊以上光罩之轉印步驟之多調式光 罩之利用正在進展。例如使用多調式光罩於被轉印體上之 抗蝕膜上進行圖案轉印時，可以一次轉印步驟形成具有複 數之抗蝕殘膜值之抗蝕圖案。具有如此高附加價值之光罩 對向液晶生產步驟之高效化之幫助較大，但光罩之生產步 驟較複雜，製造成本易增大。 该等光罩因重複使用而產生污染、或傷痕而無法使用。 又’會隨著規格變更而變得不需要。如此之情形中，發明 者等認為··相比將使用過之光罩廢棄而製造新光罩，再利 用使用過光罩而製造（再生）光罩之方法由製造成本之降低 或資源之有效利用之觀點而言較有效。又，如上述之高級 光罩（大尺寸光罩、多調式光罩）中，係使用大型且高價之 透明基板，但若可再利用如此透明基板則可獲得尤其大之 效果。 但’利用從使用過之光罩獲得之透明基板製造（再生）光 罩’有需要將所獲得之透明基板之主表面再研磨之情形。 有從使用過光罩所獲得之透明基板上附有如上述傷痕之情 形’有不滿足作為光罩用基板之品質基準之情形。但，關 於再生光罩時’使透明基板之主表面（表面側及背面側）成 為分別遍及全面大致與新品時相同之狀態，為不阻礙作為 光罩之功能而只要實施如何處理即可，對此並無研討。例 155307.doc 201214024 如即使進行每單面100 μπι左右研磨量之研磨，亦無其是否 充分必要之驗證，亦忽視製造成本之增大。尤其透明基板 為大型之情形中，研磨成本亦容易增大。又，由研磨而產 生之含玻璃之廢液亦變多量，因此其處理負荷亦變大。 因此，本發明之目的係利用使用過光罩製造（再生）再生 光罩用基板之情形中，保證作為光罩用基板之品質基準， 且降低其製造成本。 (用以解決問題之技術手段） 本發明之第1態樣提供一種再生光罩用基板之製造方 法，其係使用透明基板之第丨主表面上形成有含轉印用圖 案之膜圖案之使用過光罩者，其具有：除去前述膜圖案之 步驟；與分別研磨前述第1主表面及前述透明基板之第2主 表面之研磨步驟；前述研磨步驟中，進行於前述再生光罩 之轉印區域外，前述第丨主表面及前述第2主表面上不殘留 300 μιη以上大小之傷痕缺陷，且殘留2 μΓΏ以上不滿3〇〇 大小之傷痕缺陷之研磨量之研磨，且進行於前述再生光罩 之轉印區域内，前述第2主表面上不殘留1〇〇 μιηα上大小 之傷痕缺陷之研磨量的研磨。 本發明之第2態樣如第丨態樣所記載之再生光罩用基板之 製造方法，其中前述透明基板之厚度為3 mm以上1〇爪爪以 下。 本發明之第3態樣如第〗或第2態樣所記載之再生光罩用 基板之製造方法，其中前述研磨步驟_，進行前述第2主 表面之研磨量係前述再生光罩之轉印區域内，前述第2主 155307.doc -6- 201214024 表面上殘留2 μιη以上 的研磨。 不滿100 μηι大小之傷痕缺陷之研磨 量 本發明之第4態樣如第1或第2態樣所記載之再生光罩用 :板之#中前述再生光罩於前述第1主表面之 前述轉印區域外具有標記圖帛’前述研磨步驟中進行前 述標記圖案之形成區域内之前述第2主表面上，不殘留⑽卿 以上大小之傷痕缺陷之研磨量的研磨。 本發明之第5態樣如第!或第2態樣所記載之再生光罩用 土板之製#巾前述研磨步驟中’對前述第工主表 面進行研磨之研磨量與對前述第2主表面進行研磨之研磨 量相同。 本發明之第6態樣如第1或第2態樣所記載之再生光罩用 基板之製造方法’纟中前述研磨步驟中，對前述第i主表 面進行研磨之研磨量與對前述第2主表面進行研磨之研磨 量分別為2 μηι以上2〇 μπι以下。 本發明之第7態樣如帛1或帛2態樣所記載之再生光罩用 土板之製ie方法中前述再生光罩之轉印區域内，前述 第1主表面之前述轉印區域内，不存在2 μίη以上大小之傷 痕缺陷。 本發明之第8態樣提供一種再生光罩用基板之製造方 法，其係使用透明基板之第丨主表面上形成有含轉印用圖 案之膜圖案之使用過光罩者，其具有：除去前述膜圖案之 乂驟，刀別研磨刖述第1主表面及前述透明基板之第2主 表面之研磨步驟；前述研磨步驟中’設前述透明基板之厚 155307.doc 201214024 度為D mm時，進行前述再生光罩之轉印區域内，前述第2 主表面上殘留2㈣以上不滿2〇xD _大小之傷痕缺陷之研 磨量的研磨。 ，本發明之第9態樣如第8態樣所記載之再生光罩用基板之 製造方法，其中前述研磨量係於成為前述再生光罩之轉印 區域之區域内，前述第2主表面上不殘留2〇χ〇 pm以上大 小之傷痕缺陷之量。 本發明之第10態樣如第8或第9態樣所記載之再生光罩用 基板之製造方法，其中前述再生光罩於前述第丨主表面之 前述轉印區域外具有標記圖案，前述研磨步驟中，進行前 述標記圖案之形成區域内之前述第2主表面上，不殘留1〇〇 pm 以上大小之傷痕缺陷’且殘留2叫以上、不滿ι〇〇㈣大小 之傷痕缺陷之研磨量的研磨。 本發明之第11態樣如第8至第1〇之任一項所記載之再生 光罩用基板之製造方法，其中前述研磨步驟中，對前述第 1主表面進行研磨之研磨量與對前述第2主表面進行研磨之 研磨量相同。 ，本發明之第12態樣如第8至第11之任一項所記載之再生 光罩用基板之製造方法，其中前述再生光罩之前述轉印區 域内，刖述第1主表面上不存在2 μηι以上大小之傷痕缺 陷。 本發明之第13態樣提供一種再生光罩用基板之製造方 法，其係使用透明基板之第丨主表面上形成有含轉印用圖 案之膜圖案之使用過光罩之再生光罩用基板之製造方法， 155307.doc 201214024 其具有：除去前述膜圖案之步驟；與分別研磨前述第1主 表面及前述透明基板之第2主表面之研磨步驟；前述研磨 步驟中，進行前述再生光罩之轉印區域外，前述第丨主表 面及前述第2主表面上不殘留在照度5〇 luX2照明下可目視 之傷痕缺陷，且殘留在照度1〇〇 1似之照明下可目視之傷痕 缺陷之研磨量之研磨，且進行前述轉印區域内，前述第2 主表面上不殘留在照度丨5〇 lux之照明下可目視之傷痕缺陷 之研磨量的研磨。 本發明之第14態樣如第丨至第13之任一項所記載之再生 光罩用基板之製造方法，其中具有除去前述膜圖案後，分 別檢查前述第1主表面及前述第2主表面之檢查步驟，前述 檢查步驟中，檢查前述轉印區域外前述第丨主表面及前述 第2主表面上是否存在3〇〇 μιη以上大小之傷痕缺陷，且檢 查前述轉印區域内前述第2主表面上是否存在1〇〇 以上 大小之傷痕缺陷，若至少前述轉印區域外之前述第丨主表 面及前述第2主表面上存在300 μηι#上大小之傷痕缺陷， 或前述轉印區域内之前述第2主表面上存在1〇〇 μιη以上大 小之傷痕缺陷’則實施前述研磨步驟。 本發明之第15態樣如第14態樣所記載之再生光罩用基板 之製造方法，其中前述檢查步驟中，對前述轉印區域外之 刖述第1主表面及前述第2主表面照射照度5〇 1υχ之照射 光，該照明下目視到表示傷痕缺陷存在之反射光或散射光 之清形中，或對前述轉印區域内之前述第2主表面照射15〇 lux之照射光，該照明下目視到表示傷痕缺陷存在之反射 155307.doc •9- 201214024 光或散射光之情形中，進行前述再生光罩之轉印區域外， 前述第1主表面及前述第2主表面上不殘留3〇〇 μιηα上大小 之傷痕缺陷，且殘留2 μηι以上不滿3〇〇 μπι大小之傷痕缺陷 之研磨量之研磨，且進行前述再生光罩之轉印區域内，前 述第2主表面上不殘留1〇〇 μπι以上大小之傷痕缺陷之研磨 量的研磨。 本發明之第16態樣提供一種再生光罩用基底之製造方 法，其係利用使用過光罩者；準備利用第丨至第15之柱一 態樣所記載之製造方法所得之再生光罩用基板，於前述再 生光罩用基板之第1主表面形成薄膜。 本發明之第17態樣提供一種再生光罩用基板，其係使用 透明基板之第1主表面上形成有含轉印用圖案之膜圖案之 使用過光罩所製造之一邊長度5〇〇 mm以上24〇〇瓜爪以下之 方形者，且前述第!主表面及下述第2主表面被研磨成：除 去前述膜圖案之前述透明基板之前述第1主表面及前述第2 主表面之從各個外緣向内側至5〇 mm之外周區域内，不殘 留300㈣以上大小之傷痕缺陷，且殘留2叫以上不滿哗 大小之傷痕缺陷’且前述第2主表面之除前述外周區域外 之區域，不殘留⑽㈣以上之傷痕缺陷，且殘留2㈣以上 不滿1〇〇 μΐη大小之傷痕缺陷，且前述第〗主表面之除前述 外周區域外之區域，不殘留2叫以上大小之傷痕缺陷。 本發明之第18態樣提供一種再生光罩之製造方法，其係 使用透明基板之第！主表面上形成有含轉印用圖案之膜圖 案之使用過光罩者，準備利用第】或第2態樣所記載之再生 155307.doc 201214024 光罩用基板之製造方法所得之再生光罩用基板，於前述再 生光罩用基板之第1主表面形成新的膜圖案。 本發明之第19態樣提供一種再生光罩，其係利用於透明 基板之第1主表面上形成有含轉印用圖案之膜圖案之使用 • 過光罩所製造者，前述再生光罩之轉印區域外，前述第1 • 主表面及前述第2主表面上不存在300 μηι以上大小之傷痕 缺陷’且存在2 μπι以上不滿300 μιη大小之傷痕缺陷，且前 述轉印區域内之前述第2主表面上不存在丨〇〇 μπια上大小 之傷痕缺陷。 本發明之第20態樣如第1 9態樣所記載之再生光罩，其中 前述透明基板之厚度為3 mm以上1〇 mm以下。 本發明之第21態樣如第19或第20態樣所記載之再生光 罩’其中前述再生光罩於前述第1主表面之前述轉印區域 外具有標記圖案，前述標記圖案之形成區域内之前述第2 主表面上不存在100 μιη以上大小之傷痕缺陷。 本發明之第22態樣如第19或第20態樣所記載之再生光 罩’其中别述轉印區域内之前述第1主表面上，不存在2 μιη 以上大小之傷痕缺陷。 本發明之第23態樣提供一種再生光罩，其係利用於透明 -基板之第1主表面上形成有含轉印用圖案之膜圖案之使用 過光罩所製造者，設前述透明基板之厚度為D mm時，前 述再生光罩之前述轉印區域内，前述第2主表面上不存在 2〇xD μηι以上大小之傷痕缺陷’且存在2 μιη以上、不滿 2〇xD μηι大小之傷痕缺陷。 155307.doc •11- 201214024 本發明之第24態樣提供一種圖案轉印方法，其具有使用 第19或第20態樣所記載之再生光罩，藉由將具有丨線〜§線 範圍波長之曝光用光照射於在被轉印體上形成之抗蝕膜 上，而對前述抗蝕膜轉印前述轉印用圖案之步驟。 本發明之第25態樣提供一種圖案轉印方法，其具有使用 利用第18態樣所記載之再生光罩之製造方法所得之再生光 罩，藉由將具有i線〜g線範圍波長之曝光用光照射於在被 轉印體上形成之抗蝕膜上，而對前述抗蝕膜轉印前述轉印 用圖案之步驟。 (發明之效果） 根據本發明，利用使用過光罩製造（再生）再生光罩用基 板之情形中，可保證作為光罩用基板之品質基準，並降低 其製造成本。 【實施方式】 (1)發明者之見解 所s胃液晶顯示裝置等之製造所使用之大型光罩，通常於 光罩用基板（透明基板）之表面形成有膜圖案。該膜圖案係 成膜於光罩用基板之第1主表面之遮光膜' 半透光膜等之 光學膜經圖案化而形成。另，光學膜亦可具有蝕刻阻擋功 能或抗反射功能等’膜圖案除基於欲使用光罩而得之裝置 之轉印用圖案外’亦包含光罩之定位用標記（對齊標記）圖 案’或用以光罩之識別或管理之標記圖案等。 如此之光罩在用於液晶顯示裝置所使用之例如薄膜電晶 體（TFT)等之製造後，有變得不需要或因缺陷或污染等而 155307.doc 12 201214024 無法使用之情形。雖可將如此使用過（含無法使用者）光罩 再生，但為再生而需要保證再生光罩之性能，且無需過大 工數或成本之再生方法。 如上述，使用過之光罩上較多情形下存在傷痕（以下亦 稱傷痕缺陷）^根據發明者等之積極研究，傷痕缺陷並不 會於光罩用基板之主表面廣泛同樣地產生，區分成傷痕缺 較多存在之位置與非如此之位置。以下，一面參照圖1 進行說明。圖1係光罩用基板1〇1之平面圖。 光罩用基板ιοί中作為可能存在較多傷痕缺陷之位置， 例如可舉出第1主表面101a(形成有膜圖案之面）及第2主表 面101 b(對應於第1主表面丨〇丨a之背側之面）之曝光用光之照 射區域（以下亦將該區域稱作轉印區域11〇a、11〇b)外之區 域Ula、111b、或第2主表面l〇lb之轉印區域110b内等。 作為傷痕缺陷，包含由夾持機構將光罩置於曝光機上時之 破裂，或在描繪機或檢查機之台座上進行光罩之定位時之 拖拉傷痕等。另一方面，第1主表面101 a之轉印區域i10a 内幾乎不存在傷痕缺陷。作為該理由，可舉出第丨主表面 101a之轉印區域110a上形成有轉印圖案，使用時付出細心 注意地處理，或形成有轉印圖案之第1主表面1〇la較多情 形下由薄膜覆蓋等。又，即使轉印區域丨1〇a内存在傷痕缺 陷之情形中大部份情形下該傷痕缺陷與存在於其他區域之 傷痕缺陷之大小相比較小。 如此’用以消除存在於其他區域之傷痕缺陷之研磨量， 比用以消除存在於轉印區域丨丨〇a内之小傷痕缺陷所必要之 155307.doc -13- 201214024 研磨量充分大，因此藉由以用以消除存在於其他區域之傷 痕缺陷之研磨量研磨基板，存在於轉印區域u㈣之傷痕 缺陷亦可同時消除。 又，根據發明者等之積極研究，光罩用基板1G1表面所 要求之品質（有關可允許之傷痕之大小等之品根據位置 或面而如（a)〜(d)地不同。 (a)第1主表面10U之轉印區域u〇a外之區域丨丨^、及第 2主表面l〇lb之轉印區域11〇b外之區域1111?内例如需要 不存在300 μΐη以上，較佳為2〇〇 ^⑺以上之傷痕缺陷。例如 可從相對於基板之主平面垂直之方向觀察傷痕缺陷。此 處，所謂傷痕缺陷之大小，是指傷痕缺陷之最大徑之大小 (以平行線夾住傷痕缺陷時之平行線間之最大距離或長 方形之傷痕下長邊之長度，不定形傷痕下，將該傷痕形狀 投影於與基板垂直之面時之最大長度”若在該大小範圍 内，則異物保持於傷痕缺陷上，對曝光環境帶來顆粒之機 率極低，再者，由於50 lux照度之照明環境下實質無法目 視，因此不會損壞製品之外觀品味。另一方面，殘留不滿 3 00 μιη之傷痕缺陷，亦不會帶來上述問題。例如基板之第 1主表面及第2主表面之從各個外緣向内側5〇爪爪寬度之區 域内，可不殘留300 μιη以上大小之傷痕缺陷，且殘留2 μιη 以上不滿300 μπι大小之傷痕缺陷。一般言之，新品之光罩 用基板中不存在不滿2 μιη，更佳為ι·5 μιη之傷痕缺陷，但 考慮到最嚴格之基準（根據為所使用之曝光裝置之解像界 限以下）之點’存在2 μπι&上不滿3〇〇 μπι之傷痕缺陷之基 155307.doc 14 201214024 板可考慮新的再生光罩之製造可能性。 另’圖1中，區域Ilia或區域lllb之寬度a、b無特別限 制’但例如以尺寸表示之情形中，前述各寬度a、b例如可 為10 mm以上50 mm以下。又，寬度a可為光罩用基板ιοί 之長邊之1/20〜1/50，寬度b可為光罩用基板101之短邊之 1/25〜1/35 〇 (b)第2主表面l〇ib之轉印區域11 Ob内，例如需要不存 在1〇〇 μηι以上大小之傷痕缺陷。第2主表面l〇lb上未形成 有含轉印用圖案之膜圖案’但由曝光機轉印轉印用圖案 時’到達轉印用圖案之曝光用光從第2主表面1〇lb入射， 因此必須以第2主表面i〇ib上無一定以上傷痕缺陷之方式 控制。但’第2主表面1 〇 1 b由於從曝光光學系統之焦點面 移動光罩用基板1〇1之板厚程度，因此為不妨礙轉印所允 許之傷痕或異物之大小遠遠比第1主表面1〇13大。如此， 右考慮到利用曝光機轉印時之離焦量時，若光罩用基板 101之板厚為3 mm〜10 mm，例如5 mm，第2主表面101b之 轉印區域ll〇b上不存在100 μιη以上大小之傷痕缺陷，則可 充分保證轉印性能。即，第2主表面1〇lb之轉印區域丨丨叻 内，可允許不滿100 4爪大小之傷痕缺陷之殘留。另，滿足 該基準之情形中，適詩缺陷檢查之照明環境下（例如照 度150 1UX)，僅殘留實質無法目視程度之傷痕缺陷。另， 亦可以要求更高轉印性之製品之情形等，更佳為不存在5〇叫 以上大小之傷痕缺陷為必要條件。滿足該基準之情形中， 更明亮之缺陷檢查照明環境下(例如25〇 Iux)，僅殘留實質 155307.doc -15- 201214024 無法目視程度之傷痕缺陷。 (C)第1主表面101a之轉印區域11〇a上以薄膜覆蓋，標記 圖案配置於薄膜外側之情形中，即如圖2所示標記圖案 之形成區域112a設於第丨主表面1〇la之轉印區域u〇a外之 區域11 la之情形中，標記圖案之形成區域丨丨。之第i主表 面101a所要求之品質例如需要不存在2 μηι以上大小之傷痕 缺陷（與下述（d)相同）。又，標記圖案之形成區域“。之第 2主表面l〇lb中，可與上述第2主表面1〇lb之轉印區域u〇b 内同樣地考慮。即，考慮到有以曝光機或描繪機以光學機 構進行標記圖案之讀取之情形，尤其有以透射光進行讀取 之情形’而需要進行與上述（b)相同之考慮。 另，標記圖案之形成區域112a之形狀或大小無特別限 制，但例如如圖2所示可為一邊10 mm左右之四角形。又， 其位置可為距離光罩用基板101之外緣1〇〜2〇 右之位 置。另，標s己圖案之形成區域112a配置於薄膜内部之情形 中’該區域之第1主表面l〇la可與下述（d)相同地考慮，第2 主表面101b可與上述（b)相同地考慮。 (d)第1主表面i〇ia之轉印區域ii〇a内係形成轉印圖案之 區域。因此轉印區域110a内基本不存在可由曝光機解像之 傷痕缺陷。例如需要以不存在2 μηι以上大小之傷痕缺陷， 更佳為1 ·5 μηι以上大小之傷痕缺陷之方式進行嚴格管理。 但，轉印區域1 l〇a較多情形下係以薄膜覆蓋，再者處理上 經常付出細心注意，因而多不存在傷痕缺陷。 如上所述’傷痕缺陷並不會在光罩用基板101之主表面 155307.doc • 16 · 201214024 廣泛同樣地產生’區分成傷痕缺陷可能較多存在之位置與 非如此之位置。又，光罩用基板101之表面所要求之品質 根據位置或面而互相不同。因此，使用從使用過光罩獲得 之透明基板製造（再生）新的光罩用基板時，只要考慮上述 進行必要充分之研磨即可。進行如此之研磨從而可保證作 為光罩用基板之品質基準，且可降低其製造成本。 (2)再生光罩之製造步驟 以下’針對本發明之一實施形態之再生光罩用基板之製 造步驟’一面參照附圖進行說明。圖3係例示本實施形態 之再生光罩用基板201及再生光罩200之製造步驟之流程 圖。圖4係例示本實施形態之再生光罩用基板2〇1及再生光 罩200之製造步驟之剖面圖。 (除去膜圖案之步驟（S10)) 首先’準備如圖4(a)所例示之使用過光罩1〇〇。光罩1〇〇 具備作為透明基板之光罩用基板1〇1。光罩用基板1〇1之第 1主表面l〇la上形成有膜圖案ι〇2ρ。又，膜圖案ι〇2ρ由未 圖示之薄膜覆蓋並保護。另，光罩用基板1〇1例如作為包 含石英（Si〇2)玻璃，或含Si〇2、Al2〇3、B2〇3、RO(R係鹼 土類金屬）、R_2〇(R2係驗金屬）等之低膨脹玻璃等之平板而 構成。光罩用基板101例如可成一邊為3〇〇 mm〜2400 mm左 右之方形。尤其一邊為5〇〇 mm以上之情形中後述效果顯著 顯現。另’光罩用基板101之厚度例如可成3 mm〜20 mm左 右。 然後’將未圖示之薄膜剝離後，實施從第1主表面101a 155307.doc •17- 201214024 上除去膜圖案102p之步驟（S10)。膜圖案102p之除去例如 在膜圖案102p由以Cr為主成份之薄膜構成之情形中，可藉 由將含硝酸鈽銨（(NH4)2Ce(N03)6)及過氣酸（HC104)之純水 之鉻用蝕刻液供給於膜圖案102p進行蝕刻而進行。將除去 膜圖案102p後之情形例示於圖4(b)。 另，如上述，有從使用過光罩100獲取之光罩用基板101 之第1主表面101a及第2主表面101b上存在傷痕缺陷之情 形。尤其有光罩用基板101之第1主表面101a及第2主表面 101b之轉印區域ll〇a、110b外之區域111a、111b上存在例 如300 μηι以上之傷痕缺陷之情形。又，有第2主表面l〇ib 之轉印區域11 Ob内亦存在例如100 μιη以上大小之傷痕缺陷 之情形。與此相對，第1主表面101a之轉印區域ii〇a内幾 乎不存在2 μηι以上大小之傷痕缺陷。 (檢查步驟（S20)) 接著，實施分別檢查膜圖案102ρ經除去之光罩用基板 101之第1主表面101a及第2主表面101b之檢查步驟（S20)。 檢查步驟（S20)中，檢查光罩用基板1〇1之第i主表面1〇13及 第2主表面l〇lb之轉印區域11 〇a、11 〇b外之區域iiia、mb 上，是否存在例如300 μιη以上大小之傷痕缺陷，且檢查第 2主表面l〇lb之轉印區域ll〇b内，是否存在例如1〇〇 以 上大小之傷痕缺陷。 此處’傷痕缺陷之檢查可於必要時進行利用目視之有無 傷痕缺陷之檢測’及/或利用顯微鏡之傷痕缺陷之尺寸之 檢測。目視檢查可藉由將特定光量之照射光照射於第1主 155307.doc -18- 201214024 表面101a及第2主表面l〇ib上，目視反射光或散射光而進 行。根據該檢查方法，藉由使照射光之照度變化，而可檢 查傷痕缺陷之大小。具體言之，對第1主表面101 a及第2主 表面101b之轉印區域li〇a、ii〇b外之區域111a、111b照射 照度50 lux之照射光。然後，該照明下目視到表示傷痕存 在之反射光或散射光之情形中，可與區域111a、111b上存 在300 μηι以上大小之傷痕缺陷之情形相同地設定研磨量。 又，例如對第2主表面1 〇 1 b之轉印區域11 Ob内照射照度1 5 0 lux之照射光。然後’該照明下目視到表示傷痕存在之反 射光或散射光之情形中，可設定與轉印區域11〇b内存在 1 0 0 μιη以上大小之傷痕缺陷之情形相同之研磨量。 又，作為目視之檢查所使用之照明，可調整成期望之照 度且可固定照度者較佳。例如可從函素燈、金屬齒化物 燈、白熾燈、螢光燈、LED等光源中選擇。尤其lED光源 等可選擇適於傷痕缺陷之檢查之波長特性之光源，再者， 所照射之光束之波長特性或強度極其穩定，因此作為本發 明所使用之光源較佳。[Technical Field] The present invention relates to a method and a method for producing a substrate for a regenerative reticle used for manufacturing a flat panel display such as a liquid crystal display device (hereinafter referred to as FPD). A method for producing a substrate for a photomask, a regenerated photomask, a method for producing the same, and a pattern transfer method. [Prior Art] For example, a TFT (Thin Film Transistor) substrate used in a liquid crystal display device uses a photomask having a film pattern including a transfer pattern formed on a first main surface of a transparent substrate, and also includes use of other photomasks. It is manufactured by, for example, 5 to 6 photolithography steps. Further, in general, in the substrate for a photomask used for the manufacture of the photomask, the first main surface or the second main surface of the transparent substrate is polished to be flat and smooth. The method of polishing the main surface of the substrate for a reticle is disclosed in the patent document 1 (Japanese Laid-Open Patent Publication No. 2005-191352) and the patent document No. 2008-151916. Patent Document 1 describes a polishing method for a transparent substrate for EUV lithography. Further, Patent Document 2 describes a method of polishing the surface of a transparent substrate in a process of recycling a large-sized photomask substrate. [Problems to be Solved by the Invention] In recent years, the photomask for manufacturing a liquid crystal display device has been increasing in size. Specifically, it is more common to use a square with a width of 5 〇〇 mm or more, especially a square with a width of 1 〇〇〇 mm or more. In addition to the large size of the liquid crystal display device itself, the requirement for the production cost of the liquid crystal display device to be lowered is also 155307.doc 201214024. In order to increase production efficiency, it is more effective to use a large mask to reduce the number of transfers. Further, in order to further improve the production efficiency of the liquid crystal display device, the use of the multi-tone mask which can perform the transfer step corresponding to the previous two or more masks is progressing. For example, when pattern transfer is performed on a resist film on a transfer target by using a multi-tone mask, a resist pattern having a plurality of resist residual film values can be formed in a primary transfer step. A mask having such a high added value contributes greatly to the efficiency of the liquid crystal production step, but the production steps of the mask are complicated and the manufacturing cost is easily increased. These masks cannot be used due to contamination or scratches caused by repeated use. Also, it will become unnecessary as the specifications change. In such a case, the inventors thought that the method of manufacturing (regenerating) the mask by using the mask by using a mask instead of discarding the used mask is reduced in manufacturing cost or efficient use of resources. It is more effective from the point of view. Further, in the above-described high-grade photomask (large-size photomask, multi-tone photomask), a large-sized and expensive transparent substrate is used, but if such a transparent substrate can be reused, a particularly large effect can be obtained. However, it is necessary to re-grind the main surface of the obtained transparent substrate by using a transparent substrate manufactured (regenerated) reticle obtained from a used photomask. There is a case where the above-described flaw is attached to the transparent substrate obtained by using the mask, and there is a case where the quality of the substrate for the mask is not satisfied. However, when the reticle is regenerated, the main surfaces (the front side and the back side) of the transparent substrate are in the same state as the entire new product, and it is only necessary to perform the function as a mask without hindering the function of the reticle. There is no discussion about this. Example 155307.doc 201214024 If the grinding of a grinding amount of about 100 μπι per side is carried out, it is not necessary to verify whether it is necessary or not, and the increase in manufacturing cost is neglected. In particular, in the case where the transparent substrate is large, the polishing cost is also likely to increase. Further, since the glass-containing waste liquid produced by the polishing is also increased in amount, the processing load is also increased. Therefore, in the case of manufacturing (reproducing) a substrate for a reproducing ray using a reticle, the object of the present invention is to ensure the quality of the substrate for the reticle and to reduce the manufacturing cost thereof. (Technical means for solving the problem) According to a first aspect of the invention, there is provided a method for producing a substrate for a regenerative reticle, which is characterized in that a film pattern including a transfer pattern is formed on a second main surface of a transparent substrate a mask having a step of removing the film pattern; and a polishing step of polishing the first main surface and the second main surface of the transparent substrate; and performing the transfer of the regenerative mask in the polishing step Outside the region, the above-mentioned second main surface and the second main surface do not have a flaw of 300 μm or more, and the polishing amount of the flaw defect of 2 μΓΏ or less and less than 3 残留 remains, and is performed on the regenerated light. In the transfer region of the cover, polishing of the amount of scratches of the size of the flaw on the second main surface does not remain on the second main surface. According to a second aspect of the invention, in the method of manufacturing a substrate for a reproducing reticle according to the aspect of the invention, the transparent substrate has a thickness of 3 mm or more and 1 〇 or less. According to a third aspect of the invention, in the method of manufacturing a substrate for a reproducing reticle according to the first aspect or the second aspect, the polishing step _, performing the polishing of the second main surface is a transfer of the regenerative reticle In the area, the second main 155307.doc -6- 201214024 has a surface of 2 μm or more. The polishing amount of the flaw defect of less than 100 μηι is the fourth aspect of the present invention, and the regenerative reticle described in the first or second aspect is the above-mentioned revolving reticle of the plate on the first main surface. Outside the printing area, there is a marking pattern in which the polishing amount of the flaw defect of the size of (10) or more is not left on the second main surface in the formation region of the marking pattern in the polishing step. According to a fifth aspect of the present invention, in the polishing step of the reticle for the reticle according to the second aspect or the second aspect, the polishing amount of the first main surface is polished and the second main surface is The amount of grinding performed is the same. According to a sixth aspect of the present invention, in the method for producing a substrate for a reproducing reticle according to the first or second aspect, in the polishing step, the polishing amount of the i-th main surface is polished and the second portion is The polishing amount of the main surface is 2 μηι or more and 2 μμπι or less. According to a seventh aspect of the present invention, in the transfer method of the regenerative reticle in the method for manufacturing a regenerative reticle according to the 帛1 or 帛2 aspect, in the transfer region of the first main surface, There are no scar defects of 2 μίη or more. According to an eighth aspect of the present invention, there is provided a method of producing a substrate for a regenerative reticle, wherein a photomask having a film pattern including a transfer pattern formed on a second main surface of the transparent substrate is used: In the step of the film pattern, the polishing step of polishing the first main surface and the second main surface of the transparent substrate is performed, and in the polishing step, when the thickness of the transparent substrate is 155307.doc 201214024 degrees is D mm, In the transfer region where the regenerative reticle is carried out, the polishing of the amount of scratches of 2 (four) or more and less than 2 〇 xD _ of the size of the second main surface remains. According to a ninth aspect of the invention, in the method of manufacturing a substrate for a reproducing reticle according to the eighth aspect, the polishing amount is in a region which is a transfer region of the regenerative reticle, on the second main surface The amount of scar defects of 2 pm or more is not left. According to a tenth aspect of the present invention, in the method of manufacturing a substrate for a reproducing reticle according to the eighth or ninth aspect, the regenerative reticle has a marking pattern on the outer surface of the second main surface, and the polishing is performed. In the step of performing the scratching of the flaw of the size of 1 〇〇 pm or more on the second main surface in the formation region of the marking pattern, and the amount of scratching of the flaw of 2 or more and less than 〇〇 (four) Grinding. The method for producing a substrate for a reproducing reticle according to any one of the eighth aspect of the present invention, wherein, in the polishing step, the polishing amount of the first main surface is polished and The polishing amount of the second main surface is the same. The method for producing a substrate for a reproducing reticle according to any one of the eighth to eleventh aspects of the present invention, wherein in the transfer region of the regenerative reticle, not described in the first main surface There are scar defects of 2 μηι or more in size. According to a thirteenth aspect of the present invention, there is provided a method of producing a substrate for a regenerative reticle, wherein a substrate for a reproducing reticle using a reticle having a film pattern including a transfer pattern formed on a second main surface of the transparent substrate is used a manufacturing method of 155307.doc 201214024, comprising: a step of removing the film pattern; and a polishing step of polishing the first main surface and the second main surface of the transparent substrate, respectively; and performing the polishing mask in the polishing step Outside the transfer area, the second main surface and the second main surface do not have visible flaws visible under the illumination of 5〇luX2, and remain visible in the illumination of the illumination of 1〇〇1. The polishing amount is polished, and polishing in which the polishing amount of the flaw defect which can be visually observed under illumination of the illuminance 丨 5 lux is not left on the second main surface in the transfer region. The method for producing a substrate for a reproducing reticle according to any one of the present invention, wherein the first main surface and the second main surface are inspected after removing the film pattern. In the inspection step, in the inspection step, it is checked whether there is a flaw defect having a size of 3 μm or more on the second main surface and the second main surface outside the transfer region, and the second main portion in the transfer region is inspected Whether there is a flaw defect of a size of 1 〇〇 or more on the surface, if at least the size defect of 300 μηι# is present on the second main surface and the second main surface outside the transfer area, or in the transfer area The polishing step is performed by the presence of a flaw defect of a size of 1 μm or more on the second main surface. According to a fifteenth aspect of the invention, in the method for producing a substrate for a reproducing reticle according to the fourteenth aspect, in the inspection step, the first main surface and the second main surface are irradiated outside the transfer region Irradiation light having an illuminance of 5〇1υχ, in which the reflected light or scattered light indicating the presence of the flaw defect is visually observed, or the second main surface in the transfer region is irradiated with 15 lux of illumination light. The reflection indicating the presence of the flaw defect is visually observed under illumination. 155307.doc •9-201214024 In the case of light or scattered light, the first main surface and the second main surface do not remain outside the transfer region of the reproducing mask. Grinding of the size of the flaw on the 3〇〇μηηα, and the grinding of the amount of the scratch of 2 μηι or less and less than 3 μm of the size of the scratch, and in the transfer region of the reproducing mask, the second main surface does not remain. Grinding of the grinding amount of the flaw defect of 1 〇〇μπι or more. According to a sixteenth aspect of the present invention, there is provided a method of producing a substrate for a regenerative reticle, which is used in a regenerative reticle obtained by using the embossing method described in the first to fifteenth column. The substrate forms a thin film on the first main surface of the substrate for the reproducing reticle. According to a seventeenth aspect of the present invention, there is provided a substrate for a reproducing ray which is manufactured by using a mask having a pattern for a transfer pattern formed on a first main surface of a transparent substrate, and has a side length of 5 mm. The above-mentioned second main surface and the second main surface to be polished are polished to: the first main surface and the second main surface of the transparent substrate from which the film pattern is removed In the outer peripheral edge of each outer edge to 5 〇mm, there is no residual flaw of 300 (four) or more, and the remaining 2 is the same as the scar defect of the size of the above-mentioned second main surface except the outer peripheral region. No flaws of (10) or more (4) or more are left, and 2 (four) or more of the flaws of less than 1〇〇μΐη are left, and the area of the main surface except the outer peripheral area does not have a flaw of 2 or more. According to an eighteenth aspect of the present invention, there is provided a method of manufacturing a regenerative reticle, which is the use of a transparent substrate! In the case of using a mask having a film pattern for a transfer pattern formed on the main surface, it is intended to use the regenerative reticle obtained by the method for producing a reticle substrate of the 155307.doc 201214024, which is described in the second or second aspect. The substrate forms a new film pattern on the first main surface of the substrate for the regenerative mask. According to a nineteenth aspect of the present invention, there is provided a regenerative reticle for use in a film pattern including a transfer pattern formed on a first main surface of a transparent substrate, wherein the regenerative reticle is used Outside the transfer area, the first main surface and the second main surface do not have a flaw defect of 300 μm or more and a flaw of 2 μπι or less and less than 300 μm, and the aforementioned portion in the transfer region 2 There is no flaw defect on the main surface of the size of 丨〇〇μπια. According to a twentieth aspect of the invention, the regenerative reticle according to the ninth aspect, wherein the transparent substrate has a thickness of 3 mm or more and 1 mm or less. According to a twenty-first aspect of the present invention, in the regenerative reticle according to the nineteenth or twentieth aspect, the regenerative reticle has a mark pattern outside the transfer region of the first main surface, and the mark pattern is formed in a region There is no flaw defect of 100 μm or more on the second main surface. According to a twenty-second aspect of the present invention, in the reproduction mask described in the nineteenth or twentieth aspect, the first main surface in the transfer region is not covered with a flaw of 2 μm or more. According to a twenty-third aspect of the present invention, there is provided a regenerative photomask which is produced by using a photomask having a film pattern including a transfer pattern formed on a first main surface of a transparent substrate, and the transparent substrate is provided When the thickness is D mm, the second main surface does not have a flaw defect of 2〇xD μη or more in the transfer region of the regenerative reticle, and there is a flaw defect of 2 μm or more and less than 2〇xD μηι. . 155307.doc • 11-201214024 A 24th aspect of the present invention provides a pattern transfer method having the regenerative reticle described in the 19th or 20th aspect, which has a wavelength range of a 丨 line § line The step of irradiating the exposure light onto the resist film formed on the transfer target to transfer the transfer pattern to the resist film. According to a twenty-fifth aspect of the present invention, there is provided a pattern transfer method comprising the use of a regenerative reticle obtained by the method for producing a regenerative reticle according to the eighteenth aspect, wherein the exposure is performed by having a wavelength range of i line to g line The step of transferring the pattern for transfer onto the resist film by irradiating light onto the resist film formed on the transfer target. (Effect of the Invention) According to the present invention, in the case of manufacturing (reproducing) a substrate for a reproducing ray using a reticle, it is possible to secure a quality standard as a substrate for a reticle and to reduce the manufacturing cost thereof. [Embodiment] (1) Inventor's opinion A large-sized photomask used for the manufacture of a gastric liquid crystal display device or the like is usually formed with a film pattern on the surface of a photomask substrate (transparent substrate). The film pattern is formed by patterning an optical film such as a light-shielding film such as a semi-transmissive film on the first main surface of the photomask substrate. In addition, the optical film may have an etch barrier function or an anti-reflection function, etc. The film pattern includes a locating mark (alignment mark) pattern of the reticle except for the transfer pattern of the device based on the reticle. A marking pattern for the identification or management of the mask. Such a mask is not required to be used or used for manufacturing a liquid crystal display device such as a thin film transistor (TFT), or is not required to be used due to defects or contamination, etc. 155307.doc 12 201214024 Unusable. Although the photomask thus used (including the user-incapable) can be regenerated, it is necessary to ensure the performance of the regenerative reticle for reproduction, and it is not necessary to reproduce the method with a large amount of work or cost. As described above, there are many cases of scratches on the used mask (hereinafter also referred to as flaw defects). According to active research by the inventors, the flaw defects are not widely generated on the main surface of the substrate for the mask. Divided into the location where the scar is scarce and the location where it is not. Hereinafter, it will be described with reference to Fig. 1 . Fig. 1 is a plan view of a substrate 1〇1 for a photomask. The mask substrate ιοί is a position where there are many scar defects, and examples thereof include a first main surface 101a (a surface on which a film pattern is formed) and a second main surface 101b (corresponding to a first main surface 丨〇丨). The irradiation area of the exposure light of the side of a) (hereinafter, the area is also referred to as the transfer area 11〇a, 11〇b), the area Ula, 111b, or the second main surface l〇lb In the printed area 110b and the like. The flaw as a flaw includes cracking when the mask is placed on the exposure machine by the chucking mechanism, or dragging when the mask is positioned on the cradle of the drawing machine or the inspection machine. On the other hand, there is almost no flaw defect in the transfer region i10a of the first main surface 101a. For this reason, a transfer pattern is formed on the transfer region 110a of the second major surface 101a, and care is taken when using it, or when the first main surface 1〇1a having the transfer pattern is formed is large. Covered by a film or the like. Further, even in the case where there is a flaw in the transfer region 丨1〇a, the flaw defect is small in comparison with the size of the flaw defect existing in other regions. Thus, the amount of grinding used to eliminate the flaw defects existing in other areas is sufficiently larger than the amount of grinding used to eliminate the small flaw defects existing in the transfer area 丨丨〇a. Therefore, the amount of grinding is sufficiently large, so By polishing the substrate with a polishing amount for eliminating flaw defects existing in other regions, the flaw defects existing in the transfer region u (4) can be simultaneously eliminated. In addition, according to the active research by the inventors, the quality required for the surface of the photomask substrate 1G1 (the size of the allowable scar, etc., differs depending on the position or surface, such as (a) to (d). (a) It is preferable that the region outside the transfer region u〇a of the first main surface 10U and the region 1111 outside the transfer region 11〇b of the second main surface 10b need not be 300 μΐ or more, preferably. It is a flaw defect of 2〇〇^(7) or more. For example, the flaw defect can be observed from a direction perpendicular to the main plane of the substrate. Here, the size of the flaw defect refers to the maximum diameter of the flaw defect (in parallel clips) The maximum distance between parallel lines in the case of a flaw defect or the length of the long side of a rectangular flaw, and the maximum length when the shape of the flaw is projected on a plane perpendicular to the substrate under an amorphous flaw, if it is within the size range, The foreign matter remains on the flaws, and the probability of bringing particles to the exposed environment is extremely low. Moreover, since the illumination environment of 50 lux illumination cannot be visually observed, the appearance of the product is not damaged. On the other hand, the residue is less than 00. Ιι The flaw of η is not caused by the above problem. For example, in the region of the first main surface and the second main surface of the substrate from the outer edge to the inner side of the width of the claw, the scratch defect of 300 μm or more is not left. And the residual defect of 2 μιη or more is less than 300 μπι. Generally speaking, there is no scratch defect of 2 μιη, more preferably ι·5 μιη in the substrate for the new mask, but considering the most stringent benchmark ( According to the point of the resolution of the exposure device used, the point of 'being 2 μπι& is less than 3〇〇μπι. 155307.doc 14 201214024 The board can consider the possibility of manufacturing a new regenerative mask. In Fig. 1, the widths a and b of the region Ilia or the region ll1 are not particularly limited. However, in the case of, for example, a size, the aforementioned widths a and b may be, for example, 10 mm or more and 50 mm or less. Further, the width a may be 1/20 to 1/50 of the long side of the substrate ιοί of the photomask, the width b may be 1/25 to 1/35 of the short side of the substrate 101 for the photomask, and (b) the second main surface l〇ib In the printed area 11 Ob, for example, there is no need to exist 1〇〇μηι The upper surface of the second main surface 10b is not formed with a film pattern containing a transfer pattern. However, when the transfer pattern is transferred by the exposure machine, the exposure light reaching the transfer pattern is from the second. Since the main surface 1 lb is incident, it must be controlled so that there is no more than a certain flaw on the second main surface i 〇 ib. However, the second main surface 1 〇 1 b moves the substrate for the mask from the focal plane of the exposure optical system. The thickness of the plate of 1〇1 is so large that the size of the flaw or foreign matter allowed for the transfer is much larger than that of the first main surface 1〇13. Thus, when considering the amount of defocus when transferring by the exposure machine If the thickness of the substrate 101 for the photomask 101 is 3 mm to 10 mm, for example, 5 mm, and there is no scratch defect of 100 μm or more on the transfer region 11b of the second main surface 101b, the transfer can be sufficiently ensured. performance. That is, in the transfer region 第 of the second main surface 1〇1b, it is possible to allow the residue of the flaw defect of less than 100 4 claw size. In addition, in the case where the criterion is satisfied, in the lighting environment in which the poetry defect inspection is performed (for example, the illumination 150 1UX), only the flaw defect which is substantially unobservable is left. In addition, it is also possible to require a product having a higher transfer property, etc., and it is more preferable that there is no scratch defect of the above size. In the case of meeting this benchmark, a brighter defect is detected in the lighting environment (eg 25 〇 Iux), leaving only the substantial 155307.doc -15- 201214024 undetectable scar defects. (C) The transfer region 11〇a of the first main surface 101a is covered with a film, and the mark pattern is disposed outside the film, that is, the mark pattern forming region 112a is provided on the second main surface 1 as shown in FIG. In the case where the region 11 la outside the transfer region of la is la, the formation region of the mark pattern is 丨丨. For the quality required for the i-th main surface 101a, for example, there is no need for a flaw defect of a size of 2 μη or more (the same as (d) below). Further, in the second main surface 100b of the formation region of the mark pattern, the same can be considered in the transfer region u〇b of the second main surface 1b. That is, it is considered that there is an exposure machine or In the case where the drawing machine performs the reading of the marking pattern by the optical mechanism, in particular, the case of reading by the transmitted light, the same consideration as in the above (b) is required. Further, the shape or the size of the marking pattern forming region 112a is not It is particularly limited, but for example, it may be a square shape of about 10 mm on one side as shown in Fig. 2. Further, the position may be a position from the outer edge of the substrate 101 of the photomask 101 to the right side. In the case where the formation region 112a is disposed inside the film, the first main surface 10a of the region can be considered in the same manner as the following (d), and the second main surface 101b can be considered in the same manner as the above (b). The transfer region ii〇a of the first main surface i〇a forms a region of the transfer pattern. Therefore, there is substantially no flaw defect in the transfer region 110a that can be resolved by the exposure machine. For example, it is necessary to have a size of 2 μηι or more. The flaw defect is more preferably 1 · 5 μηι or more The method of scar defect is strictly managed. However, in the case where the transfer area 1 l〇a is often covered with a film, the treatment is often carefully taken care of, and thus there is no scar defect. As described above, It is not the same as the main surface of the reticle substrate 101 155307.doc • 16 · 201214024. The position where the flaw defect may be more likely to occur is not the same. The surface of the reticle substrate 101 is required. The quality is different depending on the position or the surface. Therefore, when a new mask substrate is produced (recycled) from a transparent substrate obtained by using a mask, it is only necessary to perform the necessary polishing as described above. It is possible to reduce the manufacturing cost of the substrate for the photomask, and to reduce the manufacturing cost. (2) Manufacturing procedure of the reproducing reticle The following is a description of the manufacturing procedure of the substrate for reproducing reticle according to an embodiment of the present invention. Fig. 3 is a flow chart showing a manufacturing procedure of the regenerative mask substrate 201 and the regenerated mask 200 of the present embodiment. Fig. 4 is a view A cross-sectional view showing a manufacturing step of the reproducing mask substrate 2〇1 and the reproducing mask 200. (Step of removing the film pattern (S10)) First, the preparation of the mask 1 as illustrated in Fig. 4(a) is prepared. The photomask 1 is provided with a photomask substrate 1〇1 as a transparent substrate. The first main surface 10a of the photomask substrate 1〇1 is formed with a film pattern 〇2 2ρ. Further, the film pattern ι 〇2ρ is covered and protected by a film (not shown). The mask substrate 1〇1 is, for example, made of quartz (Si〇2) glass, or contains Si〇2, Al2〇3, B2〇3, RO (R system). It is composed of a flat plate such as an alkali-saturated metal) or a low-expansion glass such as R 2 〇 (R2 metal). The mask substrate 101 can be, for example, a square having a side of about 3 mm to 2400 mm. In particular, in the case where the side is 5 mm or more, the effects described later are remarkably apparent. Further, the thickness of the photomask substrate 101 can be, for example, about 3 mm to 20 mm. Then, after the film (not shown) is peeled off, the step (S10) of removing the film pattern 102p from the first main surface 101a 155307.doc • 17 to 201214024 is performed. The removal of the film pattern 102p, for example, in the case where the film pattern 102p is composed of a film mainly composed of Cr, can be pure by containing ammonium cerium nitrate ((NH4)2Ce(N03)6) and peroxyacid (HC104). The chromium etchant is supplied to the film pattern 102p by etching. The case where the film pattern 102p is removed is exemplified in Fig. 4(b). Further, as described above, there is a case where a flaw defect exists on the first main surface 101a and the second main surface 101b of the photomask substrate 101 obtained by using the mask 100. In particular, the first main surface 101a of the photomask substrate 101 and the regions 111a and 111b outside the transfer regions 11a and 110b of the second main surface 101b have a flaw defect of, for example, 300 μm or more. Further, there is a case where a flaw of a size of, for example, 100 μm or more is present in the transfer region 11 Ob of the second main surface 10 ib. On the other hand, there is almost no flaw defect of a size of 2 μη or more in the transfer region ii 〇 a of the first main surface 101a. (Inspection Step (S20)) Next, an inspection step (S20) of inspecting the first main surface 101a and the second main surface 101b of the photomask substrate 101 from which the film pattern 102p has been removed is performed. In the inspection step (S20), the i-th main surface 1〇13 of the mask substrate 1〇1 and the regions iiia and mb outside the transfer regions 11a and 11b of the second main surface 10b are inspected. Whether or not there is a flaw defect of, for example, 300 μm or more, and whether or not there is a flaw defect of, for example, 1 〇〇 or more in the transfer region 11〇b of the second main surface 10b. Here, the inspection of the flaw defect can be performed by using the visual inspection for the presence or absence of the flaw defect and/or the size of the flaw defect using the microscope. The visual inspection can be performed by irradiating the irradiation light of a specific amount of light onto the first main surface 155307.doc -18-201214024 surface 101a and the second main surface l〇ib, and visually reflecting the reflected light or the scattered light. According to this inspection method, the size of the flaw defect can be checked by changing the illuminance of the irradiation light. Specifically, the illuminating light of 50 lux is irradiated to the regions 111a and 111b outside the transfer regions li〇a and ii〇b of the first main surface 101a and the second main surface 101b. Then, in the case where the reflected light or the scattered light in the presence of the flaw is visually observed under the illumination, the amount of polishing can be set in the same manner as in the case where the flaws of the size of 300 μm or more are present on the regions 111a and 111b. Further, for example, the irradiation light of the illuminance of 150 lux is irradiated to the transfer region 11 Ob of the second main surface 1 〇 1 b. Then, in the case where the reflected light or the scattered light indicating the presence of the flaw is visually observed under the illumination, the same amount of polishing as in the case of the flaw defect having a size of 100 μm or more in the transfer region 11〇b can be set. Further, it is preferable that the illumination used for the visual inspection can be adjusted to a desired illuminance and the illuminance can be fixed. For example, it can be selected from a light source such as a funnel lamp, a metal toothed lamp, an incandescent lamp, a fluorescent lamp, or an LED. In particular, a light source having a wavelength characteristic suitable for inspection of a flaw defect can be selected as the lED light source. Further, since the wavelength characteristic or intensity of the beam to be irradiated is extremely stable, it is preferable as the light source used in the present invention.
鏡以外之方法，例如可使用光罩用缺陷檢查機等之缺陷檢 查裝置。 (研磨步驟（S30))For the method other than the mirror, for example, a defect inspection device such as a defect inspection machine for a photomask can be used. (grinding step (S30))
進行檢查步驟「...... 及第2主表面ιοί 111b上存在3〇〇 155307.doc •19- 201214024 101b之轉印區域ll〇b内存在100 μιη以上大小之傷痕缺陷 後，實施分別研磨第1主表面101a及第2主表面101b之研磨 步驟（S30)。此處，若於區域111a、111b或轉印區域ll〇b内 之至少任一方確認後，實施研磨步驟（S30)。 第1主表面101a及第2主表面101b之研磨可使用含有氧化 飾或>6夕溶膠等眾所周知之游離研磨粒之研磨液與研磨墊進 行。此時，亦可使用每單面研磨第1主表面l〇la或第2主表 面101b之單面研磨方法、同時研磨兩面之兩面研磨方法之 任一者0 如此，根據本實施形態，僅特定大小之傷痕缺陷存在於 特定位置之情形下實施研磨步驟（S30)，從而可保證作為 光罩用基板之品質基準’並降低其製造成本。 另’根據本實施形態，將研磨量限制在例如以下範圍 内。 例如，進行於第1主表面1 〇 1 a及第2主表面1 〇 1 b之轉印區 域110a、110b外之區域111a、111b上不殘留300 μιη以上大 小之傷痕缺陷’且殘留2 μπι以上不滿3 0 0 μηι大小之傷痕缺 陷之研磨量的研磨。更佳為該研磨係第2主表面1〇lb之轉 印區域11 Ob内不殘留1 〇〇 μηι以上大小之傷痕缺陷，且殘留 2 μιη以上不滿1 〇〇 μηι大小之傷痕缺陷之研磨量的研磨。 或設透明基板之光罩用基板1〇1之厚度為D mm時，進行 第2主表面i〇ib之轉印區域ii〇b内不殘留2〇xD μπι以上大 小之傷痕缺陷，且殘留2 μιη以上不滿2〇xD μηι大小之傷痕 缺陷之研磨量的研磨。隨著光罩用基板之厚度D mm增 155307.doc •20- 201214024 加，由曝光將轉印用圖案轉印於被轉印體時，殘留於第2 主表面101b之轉印區域内之傷痕缺陷從具有轉印圖案 之第1主表面（轉印時與曝光裝置之光學系統之焦點面實質 上一致）僅分開厚度D mm，因此於被轉印體上不易連結成 轉印缺陷般之像。因此，若殘留於第2主表面1〇lb之轉印 區域110b内之傷痕缺陷之大小相對於基板之厚度〇 mm在 上述範圍内’則可成為滿足光罩基板之品質基準之光罩用 基板。 或進行第1主表面l〇la及第2主表面l〇lb之轉印區域 110a、110b外之區域iiia、lllb上，不殘留在照度5〇 1υχ 之照明下可目視之傷痕缺陷，且殘留在照度1 〇〇 lux之照明 下可目視之傷痕缺陷之研磨量的研磨。較佳為該研磨係於 第2主表面101b之轉印區域110b内，不殘留在照度15〇 lux 之照明下可目視之傷痕缺陷之研磨量，殘留在照度25〇 lux 下可目視之傷痕缺陷之研磨量的研磨。 將研磨量設於如此範圍内，從而可保證作為製造（再生） 之光罩用基板之品質基準，並降低其製造成本。作為具體 之研磨量，對第1主表面10la進行之研磨量與對第2主表面 101 b進行之研磨量分別為例如2 μιη以上2 0 μηι以下，較佳 為5 μηι以上10 μιη以下即可。此處所言之研磨量，意指相 對於研磨對象面垂直方向之透明基板之除去量。該研磨量 與將透明基板之主表面（表面側及背面側）分別自動地研磨 1 00 μηι左右相比’係鑑於必要充分條件之研磨量。 又，根據所檢測之傷痕缺陷之大小，可從上述數值範圍 155307.doc •21 · 201214024 選擇研磨量。可預先求得傷痕缺陷之大小，與由研磨該傷 痕缺陷存在之基板表面而可滿足品質基準之研磨量之關 係’由該關係可求得必要之研磨量。 另，研磨步驟（S30)中，可使對第i主表面⑺“進行之研 磨量與對第2主表面101b進行之研磨量相同。考慮到對於 各第1主表面101a及第2主表面i〇lb之轉印性能與外觀性能 時，研磨量只要根據必要之研磨量最大之區域決定即可。 又’藉由兩面研磨，同時同量研磨第1主表面1〇u及第2主 表面ioib之兩面之情形中，只要根據第i主表面1〇u或第2 主表面101b中必要之研磨量較大一方之面決定研磨量即 可。或亦可根據藉由較多使用過光罩之傷痕缺陷傾向所規 定之規格’於第1主表面101 a及第2主表面101b上應用同一 基準研磨量進行研磨。 研磨結束後’以純水或有機溶媒等清洗第1主表面丨〇 i a 或第2主表面101b，將殘留於表面之研磨液等除去，製成 本實施形態之再生光罩用基板201。將所製成之再生光罩 用基板201之剖面構成例示於圖4(c)。 (成膜步驟（S40)) 接著，於所製成之再生光罩用基板201之第1主表面101a 上，形成例如以Cr等為主成份之遮光膜202。然後，於所 形成之遮光膜202上形成抗兹膜203，製造本實施形態之再 生光罩用基底200b。另，遮光膜202例如可利用濺鑛法等 方法而形成。又，抗银膜203係利用ί型光致抗钮劑材料 或負型光致抗蝕劑材料構成。抗蝕膜203例如係使用狹縫 I55307.doc •22· 201214024 式塗布機或旋轉塗布機等形成。將所製成之再生光罩用義 底200b之剖面構成例示於圖4(d)。 (膜圖案形成步驟（S50)) 大接著，對所製成之再生光罩用基底2嶋利用雷射描繪機 等進行描繪曝光，使抗蝕膜203感光，利用噴灑方式等手 法對抗蝕膜203供給顯影液而實施顯影，形成至少覆蓋遮 光部之形成預定區域之抗㈣案2〇3ρβ將形成有抗钮圖案 203ρ之情形例示於圖4(e)。 然後，將所形成之抗蝕圖案2031)作為光罩，蝕刻遮光膜 2〇2而形成遮光膜圖案2〇2ρ。遮光膜2〇2之蝕刻可利用喷灑 方式等手法將上述鉻用蝕刻液供給於遮光膜2〇2而進行。 其後，使用剝離液等除去抗蝕圖案2〇3ρ，製造本實施形態 之再生光罩200,另，所製成之遮光膜圖案2〇2ρ之上面由 薄膜覆蓋較佳。將所製成之再生光罩2〇〇之剖面圖例示於 圖4(f)。經由所製成之再生光罩2〇〇,將具有丨線〜㈣範圍 之波長之曝光用光照射於在被轉印體上形成之抗蝕膜上， 藉此可於抗蝕膜上轉印轉印用圖案（遮光膜圖案2〇2p)。 (3)本實施形態之效果 根據本實施形態，奏效以下所示之丨個或複數個效果。 (a)根據本實施形態，可充分發揮再生光罩之功能且 可設定可合理地削減再生之負荷、成本、環境負荷之研磨 置，進行適用該研磨量之研磨。該研磨量之設定係對應於 基板之各個主表面及區域而進行，因此與自動於全面、兩 面適用較大之研磨量之情形相比非常合理。 155307.doc -23- 201214024 (b)根據本實施形態，將研磨量設定於特定範圍内，從 而可不超過所要求之品質基準過剩地進行研磨，可保證再 生光罩用基板201所要求之品質基準，並降低其製造成 本0 (0本實施形態之再生光罩用基底2〇〇b及再生光罩2〇〇 係使用上述再生光罩用基板2〇1而製造’因此可保證品質 基準’並可降低其製造成本。 <本發明之其他實施形態> 以上，具體說明了本發明之實施形態，但本發明不限於 上述實施形態，在不脫離其主旨之範圍内可進行各種變 更。 根據上述實施形態，針對再生光罩用基板2〇1上形成單 層之遮光膜202從而製造再生光罩用基底2〇仳，製造作為 二元光罩之再生光罩2〇〇之情形進行了說明，但本發明不 限於該形態。即，對於以再生光罩用基板2〇1上不僅積層 遮光膜亦積層半透光膜等之方式形成，製造作為多調式光 罩之再生光罩200之情形，本發明亦可適用。 【圖式簡單說明】 圖1係光罩用基板之平面圖； 圖2係例示標記圖案之形成區域之平面圖； 圖3係例不本發明之一實施形態之再生光罩用基板，及 再生光罩之製造步驟之流程圖；及 圖4(a)〜(f)係例示本發明之一實施形態之再生光罩用基 板，及再生光罩之製造步驟之剖面圖。 I55307.doc •24· 201214024 【主要元件符號說明】 100 光罩 101 光罩用基板（透明基板） 101a 第1主表面 101b 第2主表面 102p 膜圖案 110a 轉印區域 110b 轉印區域 111a 轉移區域外之區域 111b 轉移區域外之區域 201 再生光罩用基板 a ' b 寬度 155307.doc •25·In the inspection step "... and the second main surface ιοί 111b, there are 3〇〇155307.doc •19- 201214024 101b in the transfer area ll〇b, after the flaw of 100 μm or more, respectively, The polishing step (S30) of polishing the first main surface 101a and the second main surface 101b. Here, after confirming at least one of the regions 111a and 111b or the transfer region 11b, the polishing step (S30) is performed. The polishing of the first main surface 101a and the second main surface 101b can be carried out using a polishing liquid containing a well-known free abrasive such as oxidized or -6 sol, and the polishing pad can be used. In the single-side polishing method of the main surface 10a or the second main surface 101b, and the method of polishing both surfaces of the two surfaces simultaneously, according to the present embodiment, only a specific size of the flaw defect exists in a specific position. In the polishing step (S30), the quality of the substrate for the photomask can be ensured and the manufacturing cost can be reduced. Further, according to the present embodiment, the polishing amount is limited to, for example, the following range. For example, the first main surface is performed. 1 及1 a and the second main surface 1 〇1 b of the areas 111a, 111b outside the transfer areas 110a, 110b do not leave a flaw of 300 μm or more in size and the residue of 2 μπι or more is less than 3 0 0 μηι It is preferable that the polishing amount of the defect is more than 1 ιμηι in the transfer region 11 Ob of the second main surface 1 lb of the polishing system, and the residue is not more than 1 μm. When the thickness of the mask substrate 1〇1 of the transparent substrate is D mm, the transfer area ii〇b of the second main surface i〇ib does not remain 2〇xD μπι. Grinding of the above-mentioned size of the flaw, and the grinding amount of the scratch defect of 2 ι or more than 2 〇 xD μηι. The thickness of the substrate for the reticle is increased by 155307.doc •20-201214024 plus, and the exposure will be changed. When the printing pattern is transferred to the transfer target, the flaw defect remaining in the transfer region of the second main surface 101b is from the first main surface having the transfer pattern (the focal plane of the optical system at the time of transfer and the exposure device) Substantially consistent) only separate thickness D Therefore, it is difficult to connect the transfer defect to the image on the transfer target. Therefore, if the size of the flaw defect remaining in the transfer region 110b of the second main surface 1b is relative to the thickness of the substrate 〇mm In the above range, the substrate for the photomask that satisfies the quality standard of the photomask substrate or the regions iii1 and 11b outside the transfer regions 110a and 110b of the first main surface 10a and the second main surface 10b may be formed. In the above, the scratches which are visible under the illumination of 5 〇 1 照 are not left, and the grinding amount of the flaw defects which can be visually observed under the illumination of 1 〇〇 lux is left. Preferably, the polishing is carried out in the transfer region 110b of the second main surface 101b, and the amount of scratches which can be visually observed under the illumination of 15 lux lux is not left, and the scratch defect which can be visually observed under the illumination of 25 lux is observed. Grinding of the amount of grinding. By setting the amount of polishing within such a range, it is possible to secure the quality standard of the substrate for the photomask to be manufactured (recycled) and to reduce the manufacturing cost thereof. The specific polishing amount is such that the polishing amount of the first main surface 101a and the polishing amount of the second main surface 101b are, for example, 2 μm or more and 20 μm or less, preferably 5 μηη or more and 10 μιη or less. . The amount of polishing referred to herein means the amount of removal of the transparent substrate in the direction perpendicular to the surface of the object to be polished. The amount of polishing is compared with the case where the main surface (surface side and back side) of the transparent substrate are automatically polished to about 100 μm, respectively. Further, depending on the size of the flaw detected, the amount of grinding can be selected from the above numerical range 155307.doc • 21 · 201214024. The size of the flaw defect can be determined in advance, and the relationship between the polishing amount and the quality standard can be satisfied by polishing the surface of the substrate in which the flaw defect exists. From this relationship, the necessary polishing amount can be obtained. Further, in the polishing step (S30), the amount of polishing performed on the i-th main surface (7) can be made the same as the amount of polishing performed on the second main surface 101b. It is considered that for each of the first main surface 101a and the second main surface i In the transfer performance and appearance performance of 〇lb, the amount of polishing can be determined according to the region where the necessary amount of polishing is the largest. Further, the first main surface 1〇u and the second main surface ioib are simultaneously ground by the same amount by two-side grinding. In the case of both sides, the amount of polishing may be determined according to the surface of the i-th main surface 1〇u or the second main surface 101b having a larger amount of polishing. Alternatively, it may be based on the use of a mask. The specification "specified by the tendency of the flaw defect" is polished on the first main surface 101a and the second main surface 101b by the same reference polishing amount. After the completion of the polishing, the first main surface 丨〇ia is cleaned with pure water or an organic solvent or the like. The second main surface 101b removes the polishing liquid or the like remaining on the surface to form the regenerative mask substrate 201 of the present embodiment. The cross-sectional structure of the regenerated photomask substrate 201 is shown in Fig. 4(c). (film forming step (S40)), followed by On the first main surface 101a of the regenerative mask substrate 201, for example, a light-shielding film 202 mainly composed of Cr or the like is formed. Then, a resist film 203 is formed on the formed light-shielding film 202, and the reproducing light of this embodiment is produced. The cover substrate 200b. The light-shielding film 202 can be formed, for example, by a sputtering method, etc. Further, the silver-resistant film 203 is formed of a photoresist material or a negative photoresist material. The film 203 is formed, for example, by using a slit I55307.doc • 22·201214024 coater or a spin coater, etc. The cross-sectional structure of the prepared regenerative mask base 200b is shown in Fig. 4(d). In the step (S50), the substrate 2 for reproducing the mask to be formed is subjected to drawing exposure by a laser scanner or the like, and the resist film 203 is exposed to light, and the developer is supplied to the resist film 203 by a spraying method or the like. Further, development is carried out to form an anti-(4) case 2 〇 3ρβ covering at least a predetermined region of the light-shielding portion, and a case where the anti-buckle pattern 203p is formed is exemplified in Fig. 4(e). Then, the formed resist pattern 2031 is used as light. The cover is formed by etching the light shielding film 2〇2 The light film pattern 2〇2ρ. The etching of the light-shielding film 2〇2 can be performed by supplying the etching liquid for chromium to the light-shielding film 2〇2 by a method such as a spraying method. Thereafter, the resist pattern is removed by using a peeling liquid or the like. 3ρ, the regenerative mask 200 of the present embodiment is manufactured, and the upper surface of the formed light-shielding film pattern 2〇2ρ is preferably covered by a film. A cross-sectional view of the prepared regenerative mask 2 is shown in FIG. (f) illuminating the resist film having a wavelength in the range of 丨 to (4) on the resist film formed on the transfer target via the regenerated mask 2 manufactured, thereby being resistant to the resist The transfer transfer pattern (light-shielding film pattern 2〇2p) was transferred on the film. (3) Effects of the present embodiment According to the present embodiment, one or a plurality of effects shown below are effective. (a) According to the present embodiment, the function of the regenerative reticle can be sufficiently exhibited, and a polishing apparatus capable of appropriately reducing the load, cost, and environmental load of the regeneration can be set, and polishing using the polishing amount can be performed. Since the setting of the polishing amount is performed corresponding to each main surface and region of the substrate, it is very reasonable as compared with the case where the polishing amount is automatically applied to the entire surface and the surface is applied to a large amount. 155307.doc -23-201214024 (b) According to the present embodiment, the polishing amount can be set to a specific range, and the polishing can be performed without exceeding the required quality standard, thereby ensuring the quality standard required for the regenerative photomask substrate 201. And the production cost of the regenerative reticle 2b and the regenerative reticle 2 of the present embodiment are manufactured using the regenerative reticle substrate 2〇1, so that the quality standard can be ensured. The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. In the above-described embodiment, a case where a single-layer light-shielding film 202 is formed on the reproducing mask substrate 2〇1 to produce a regenerative photomask substrate 2〇仳, and a regenerative photomask 2 as a binary mask is manufactured is described. However, the present invention is not limited to this embodiment. In other words, a multi-transparent light is formed by stacking a semi-transmissive film or the like on the substrate 2〇1 of the regenerative mask. The present invention is also applicable to the case of the reticle of the reticle 200. [Fig. 1 is a plan view of a substrate for a reticle; Fig. 2 is a plan view showing a region where a mark pattern is formed; A flowchart of a process for producing a regenerative mask substrate and a regenerative reticle according to an embodiment of the present invention; and FIGS. 4(a) to 4(f) are diagrams showing a regenerative photomask substrate and a regenerative light according to an embodiment of the present invention. Sectional view of the manufacturing steps of the cover. I55307.doc •24· 201214024 [Description of main components] 100 Photomask 101 Photomask substrate (transparent substrate) 101a First main surface 101b Second main surface 102p Film pattern 110a Transfer area 110b Transfer area 111a Area outside the transfer area 111b Area outside the transfer area 201 Reproduction mask substrate a' b Width 155307.doc •25·