TW200804796A - Method of inspecting a pattern defect, substrate, having a test pattern for inspecting a pattern defect, apparatus for inspecting a pattern defect, method of producing a photomask, and method of producing a substrate for a display device - Google Patents

Method of inspecting a pattern defect, substrate, having a test pattern for inspecting a pattern defect, apparatus for inspecting a pattern defect, method of producing a photomask, and method of producing a substrate for a display device Download PDF

Info

Publication number
TW200804796A
TW200804796A TW096121312A TW96121312A TW200804796A TW 200804796 A TW200804796 A TW 200804796A TW 096121312 A TW096121312 A TW 096121312A TW 96121312 A TW96121312 A TW 96121312A TW 200804796 A TW200804796 A TW 200804796A
Authority
TW
Taiwan
Prior art keywords
pattern
test
unit
overlapping
repeating
Prior art date
Application number
TW096121312A
Other languages
Chinese (zh)
Other versions
TWI394945B (en
Inventor
Noboru Yamaguchi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200804796A publication Critical patent/TW200804796A/en
Application granted granted Critical
Publication of TWI394945B publication Critical patent/TWI394945B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An object of this invention is to inspect, in a short time, presence of a very small defect occurring in a repetitive pattern. This invention provides a pattern defect inspecting method for inspecting, in a test object having a repetitive pattern including unit patterns periodically arranged, a defect occurring in the repetitive pattern, the method including the steps of forming an overlapped pattern by overlapping a test pattern composed of test unit patterns periodically arranged and the repetitive pattern, of emitting light to the overlapped pattern at a predetermined incident angle, and of inspecting presence of a defect occurring in the repetitive pattern by observing diffracted light from the overlapped pattern.

Description

200804796 九、發明說明： 【發明所屬之技術領域】 本發明係關於用於檢查產生於周期性排列有單位圖案 之重複圖案上的瑕疵之圖案瑕疵檢查方法、圖案瑕疵檢查 用測試圖案基板及圖案瑕疵檢查裝置，與實施圖案瑕疵檢 查方法，以製造光罩之光罩的製造方法及顯示裝置用基板 之製造方法。 【先前技術】 有一種在裝置用基板或是用於製造裝置用基板之光罩 的表面，形成以周期性排列有單位圖案之重複圖案者。此 單位圖案原本須規則性排列，但是，有時規則性排列之圖 案上含有誤差，此誤差具有不預期而發生之不同規則性。 此誤差亦稱爲不均瑕疵，係在製造步驟中，由於某種原因 而發生。 如在顯示裝置用基板中產生前述瑕疵時，會有發生顯 示不均等之問題。此外，製造顯示裝置時使用之光罩中產 生前述瑕疵時，其瑕疵會被轉印在形成於顯示用裝置基板 之圖案上，問題造成之影響變大。因而，前述之裝置用基 板及光罩等，需要作爲被檢查體，以檢查有無產生於重複 圖案上之瑕疵。 就前述之瑕疵，通常由於微細之瑕疵被規則性排列， 在各個圖案之形狀檢查中檢測困難，而作爲整個區域來觀 察時，可能成爲與其他部分不同之狀態。此外，即使可微 觀地檢查各個單位圖案之形狀，從成本上及時間上之觀點 200804796 而言仍困難。反而，宏觀地觀察包含數個單位圖案之寬廣 區域時，往往檢測較容易。因而，先前係藉由以目視實施 斜光檢查，來檢查有無瑕疵。但是，以目視實施斜光檢查， 會有依作業者而發生檢查結果不一等的問題，因此，以目 視實施斜光檢查宜採自動化。 在曰本特開平9-329555號公報（以下，稱「專利文獻 1」）中揭示有一種從半導體晶圓製造之半導體裝置用基板 的宏觀檢查裝置，其爲將目視之斜光檢查予以自動化的先 前技術。此裝置係將晶圓全面縮聚成單一視野，來檢查由 於焦點偏差、晶圓之下面存在塵埃（粒子）導致晶圓上下 位置變動而造成散焦，及因晶圓之顯像/蝕刻/剝離步驟 而導致半導體晶圓表面之周期性構造中的表面瑕疵者。 揭示於專利文獻1之裝置具有：光源，其係在形成於 半導體晶圓表面之重複圖案上照射希望波長之光；相機， 其係接收來自基板表面之繞射光；及檢測手段，其係用於 藉由比較以此相機拍攝之圖像資料與無瑕疵之基準資料， 以檢測瑕疵。而後，觀察來自重複圖案之繞射光，藉由檢 測其凌亂，以檢測發生於該重複圖案上之瑕疵。 【發明内容】 (發明所欲解決之問題） 上述專利文獻1之裝置，於重複圖案之周期在某種程 度以下，如50从m以下等之情況可適用。如可檢測周期爲 2//m程度以下之半導體裝置的重複圖案上產生之上述瑕 疵，或是如周期爲1 5 v m程度以下之半導體裝置製造用光 200804796 罩的重複圖案上產生之上述瑕疵。 但是，專利文獻1之裝置，如液晶顯示面板等顯示裝 置用基板及製造顯示裝置用基板用之光罩，於重複圖案中 之單位圖案的排列周期大，如爲100〜1000 /z m程度時，即 使觀察來自重複圖案之繞射光，仍不易檢測瑕疵。 本發明之目的爲提供一種可以短時間檢查有無產生於 重複圖案之微細瑕疵之圖案瑕疵檢查方法、圖案瑕疵檢查 用測試圖案基板及圖案瑕疵檢查裝置，以及光罩之製造方 法及顯示裝置用基板之製造方法。 (解決問題之手段） 解決前述課題之第1發明的圖案瑕疵檢查方法，係用 於檢查具備以周期性排列有單位圖案之重複圖案的被檢查 體之產生於前述重複圖案上的瑕疵，其具備以下步驟··藉 由將以不同於前述重複圖案之周期而周期性排列測試用單 位圖案所形成之測試圖案與前述重複圖案重疊，而形成重 疊圖案之步驟·，以指定之入射角對前述重疊圖案照射光之 步驟=及藉由觀察來自前述重疊圖案之繞射光，以檢查有 無產生於前述重複圖案上之瑕疵之步驟。 另外，解決前述課題之第1發明，宜爲形成前述重疊 步驟，係藉由使前述測試圖案之形成面與前述重複 Η案之形成面相對，以保持形成於透明支撐體之一主面的 前述測試圖案與形成於其他透明支撐體之一主面的前述重 複圖案’而形成重疊圖案，此時，宜使前述測試圖案之形 成面與前述重複圖案之形成面隔開指定之間隔，而實質性 200804796 平行地相對，再者，前述指定之間隔宜爲0.1 // m以上，30 // m以下。 解決前述課題之第2發明的圖案瑕疵檢查方法，係用 於檢查具備以周期性排列有單位圖案之重複圖案的被檢查 體之產生於前述重複圖案上的瑕疵，其具備以下步驟：以 指定之入射角，對周期性排列測試用單位圖案所形成之測 試圖案照射光之步驟；藉由使通過前述測試圖案之透過光 成像於前述重複圖案上，而形成重疊圖案之步驟；及藉由 觀察來自前述重疊圖案之繞射光，以檢查有無產生於前述 重複圖案上之瑕疵之步驟。 解決前述課題之第3發明的圖案瑕疵檢查方法，係用 於檢查具備以周期性排列有單位圖案之重複圖案的被檢查 體之產生於前述重複圖案上的瑕疵，其具備以下步驟：以 指定之入射角，對前述重複圖案照射光之步驟；藉由使通 過前述重複圖案之透過光成像於以周期性排列測試用單位 圖案所形成之測試圖案上，而形成重疊圖案之步驟；及藉 由觀察來自前述重疊圖案之繞射光，以檢查有無產生於前 述重複圖案上之瑕疵。 另外，解決前述課題之第1至第3發明，宜爲前述單 位圖案之排列周期係比前述測試用單位圖案之排列周期 大。 特別是，宜爲前述單位圖案之排列周期係前述測試用 單位圖案之排列周期的整數倍。 更宜爲前述單位圖案之排列周期係80 μ m以上，2000 200804796 μ m以下，前述測試用單位圖案之排列周期係〇. 1 v m以 上，50/z m以下之情況。 此外，解決前述課題之第1至第3發明，在形成前述 重疊圖案之步驟，可以使前述單位圖案之排列方向與前述 測試用單位圖案之排列方向彼此平行的方式，而形成前述 重疊圖案。此時，因爲係在單位圖案與測試用單位圖案之 排列方向一致之狀態下形成重疊圖案，所以在一定檢查視 野內，容易觀察繞射光之凌亂而較佳。 此外，解決前述課題之第1至第3發明，在形成前述 重疊圖案之步驟，亦可以使前述單位圖案之排列方向與前 述測試用單位圖案之排列方向彼此不平行且彼此不正交的 方式，而形成前述重疊圖案。如此，可減輕爲了使單位圖 案與測試用單位圖案之排列方向平行而相對位置對準的困 難而較佳。 另外，此時宜使前述單位圖案之排列方向與前述測試 圖案之排列方向，以0.01度以上，2度以下之角度彼此相 交的方式，而形成前述重疊圖案，以易於找出瑕疵。 解決前述課題之第4發明的圖案瑕疵檢查方法，係用 於檢查具備以周期性排列有單位圖案之重複圖案的被檢查 體之產生於前述重複圖案上的瑕疵，其具備以下步驟：藉 由使前述單位圖案之排列方向與前述測試用單位圖案之排 列方向彼此不平行且彼此不正交的方式，將以周期性排列 測試用單位圖案所形成之測試圖案與前述重複圖案重疊’ 而形成重疊圖案之步驟；以指定之入射角，對前述重疊圖 200804796 案照射光之步驟；及藉由觀察來自前述重疊圖案之繞射 光，以檢查有無產生於前述重複圖案上之瑕疵之步驟。 解決前述課題之第4發明，宜使前述測試圖案之形成 面與前述重複圖案之形成面隔開指定之間隔，而實質性平 行地相對，再者，前述指定之間隔宜爲0.1 V m以上，30# m以下。 解決前述課題之第5發明的圖案瑕疵檢查用測試圖案 基板具備：透明基板，及在前述透明基板之主表面上以周 期性排列有測試用單位圖案所形成之測試圖案，前述測試 用單位圖案之排列周期爲0.1 // m以上，50// m以下，前述 測試用單位圖案之線寬的變動及線位置之變動均爲30nm 以下。 解決前述課題之第6發明的圖案瑕疵檢查裝置，係用 於檢查具備圖案之被檢查體之產生於前述圖案上的瑕疵， 其具備：保持手段，其係用於將具備測試圖案之圖案瑕疵 檢查用測試圖案基板與前述被檢查體，隔開指定之間隔重 疊而予以保持，以形成重疊圖案；照射手段，其係用於以 指定之入射角對前述重疊圖案照射光；及攝像手段，其係 用於觀察來自前述重疊圖案之繞射光。 解決前述課題之第7發明的圖案瑕疵檢查裝置，係用 於檢查具備圖案之被檢查體之產生於前述圖案上的瑕疵， 其具備：保持手段，其係用於將具備測試圖案之圖案瑕疵 檢查用測試圖案基板與前述被檢查體，隔開指定之間隔重 疊而予以保持，以形成重疊圖案；照射手段，其係用於以 -10- 200804796 指定之入射角對前述重疊圖案照射光；及攝像手段 用於觀察來自前述重疊圖案之繞射光。 解決前述課題之第8發明的圖案瑕疵檢查裝置 於檢查具備圖案之被檢查體之產生於前述圖案上的 其具備：保持手段，其係用於保持前述被檢查體； 段，其係用於以指定之入射角對測試圖案照射光’ 前述測試圖案之透過光在前述圖案上成像，藉此而 疊圖案；及攝像手段，其係用於藉由觀察來自前述 案之繞射光，以檢查有無產生於前述圖案上之瑕疵 解決前述課題之第9發明的圖案瑕疵檢查裝置 於檢查具備圖案之被檢查體之產生於前述圖案上的 其具備：保持手段，其係用於保持測試圖案；投影 其係用於以指定之入射角對前述圖案照射光，使通 圖案之透過光在前述測試圖案上成像，藉此而形成 案；及攝像手段，藉由觀察來自前述重疊圖案之繞 以檢查有無產生於前述重複圖案上之瑕疵。 解決前述課題之第10發明的光罩之製造方法， 使用第1至第9發明之圖案瑕疵檢查方法、圖案瑕 用測試圖案基板或圖案瑕疵檢查裝置，以檢查有無 前述重複圖案上之瑕疵的步驟。 解決前述課題之第11發明的顯示裝置用基板 方法，係使用由第10發明之光罩的製造方法所製 罩，形成像素圖案，以製造顯示裝置用基板。 (發明之效果） ，其係 ，係用 瑕疵， 投影手 使通過 形成重 重疊圖 〇 ，係用 瑕疵， 手段， 過前述 重疊圖 射光， 係具有 疵檢查 產生於 之製造 造之光 -11- 200804796 本發明可提供一種可以短時間檢查有無產生於重複圖 案之微細瑕疵之圖案瑕疵檢查方法、圖案瑕疵檢查用測試 圖案基板及圖案瑕疵檢查裝置，以及光罩之製造方法及顯 示裝置用基板之製造方法。 【實施方式】 以下，參照圖式說明實施本發明之最佳形態。 參照之圖式中，第1圖係說明本發明之圖案瑕疵檢查 方法中的第1實施形態之圖，（a)顯示用於實施第1實施形 態之圖案瑕疵檢查裝置10的槪略側面圖，（b)顯示圖案瑕疵 檢查用測試圖案基板具備之測試圖案的部分放大圖，（c)顯 示被檢查體具備之重複圖案的部分放大圖。 此外，第5圖係重疊重複圖案與測試圖案之重疊圖 案、來自重疊圖案之繞射光及瑕疵之檢測結果的說明圖， U)顯示測試圖案與正常重複圖案之重疊圖案的部分放大 圖，（b)顯示測試圖案與包含瑕疵之重複圖案之重疊圖案的 部分放大圖，（c)顯示自重疊圖案獲得之繞射光的攝影結 果，（d)顯示使用繞射光之攝影結果的瑕疵檢測結果。 而第9圖顯示產生於被檢查體具備之重複圖案上的瑕 疵，U)及（b)顯示座標位置變動系之瑕疵（位置偏差瑕疵）， (c)及（d)顯示尺寸變動系之瑕疵（線寬瑕疵）。 另外，第2圖至第4圖分別顯示用於實施本發明之圖 案瑕疵檢查方法中的第2至第4實施形態之圖案瑕疵檢查 裝置20、30、40的槪略側面圖。 [A ]第1實施形態 -12- 200804796 以下，說明（1)第1實施形態之圖案瑕疵檢查方法中， 成爲檢查對象之被檢查體的構造，及（2)圖案瑕疵檢查方法 使用之圖案瑕疵檢查用測試圖案基板的構造。其次，說明 (3)圖案瑕疵檢查裝置之構造，最後，說明（4)使用圖案瑕疵 檢查裝置之圖案瑕疵檢查方法。 (1)被檢查體之構造 首先，使用第1圖（c)、第9圖及第10圖說明被檢查體 之構造。 第1實施形態之圖案瑕疵檢查方法，係將如第10圖所 示之光罩50作爲被檢查體。光罩50如用作製造液晶顯示 裝置（特別是平面板顯不器（Flat Panel Display): FPD)、電 漿顯示裝置、EL顯示裝置、LED顯示裝置、DMD顯示裝置 等顯示裝置用基板時的曝光用遮罩。此等顯示裝置用之光 罩50，如可作爲邊L1或L2超過lm之大型基板。 作爲被檢查體之光罩50,在作爲透明支撐體之透明基 板57的主表面上，具備由薄膜（遮光膜）所構成之重複圖 案56。 透明基板57之材料如使用合成石英玻璃基板等。此 外，構成重複圖案56之薄膜材料，如使用鉻等具有遮光性 之材料或半透光性材料。另外，薄膜並不限定於單層，亦 可疊層構成，此時，除遮光膜之外，亦可伴隨半透光性之 膜，此外，亦可伴隨蝕刻中止層等功能性之膜。另外，上 述薄膜上亦可伴隨抗蝕膜。 重複圖案56如第1圖（c)所示，具有以周期性排列成格 -13- 200804796 柵狀之單位圖案53的形狀。單位圖案53之排列周期D1， 亦即單位圖案53之排列方向上之排列的周期，如設定成 80~2 000 // m 〇 繼續，就產生於重複圖案56之瑕疵，配合光罩50之 製造方法作說明。 光罩50之製造通常係經過以下之（1)至（5)的步驟來進 行。（1)首先，在透明基板57上形成薄膜（遮光膜），並在 此薄膜上形成抗蝕膜。（2)其次，使用繪圖機，在前述抗蝕 膜上照射雷射等之光，如使用光柵繪圖方式等任意之繪圖 方式實施繪圖，將指定之圖案予以曝光。（3)其次，進行顯 像，選擇性除去繪圖部或非繪圖部，而形成抗蝕圖案。（4) 其後，遮罩抗蝕圖案來蝕刻上述薄膜，而在此薄膜上形成 重複圖案56。（5)最後，除去殘留抗蝕層，而完成第10圖 所示之光罩50的製造。另外，爲多層膜之情況下，可設置 依據膜之材料的追加步驟。 此處，如上述之（2)的步驟中，可能有因雷射光之掃描 精度突然惡化，或光束徑突然變動，或環境因素的變動等， 而在重複圖案56上發生瑕疵之情形。此外，因各種原因， 會產生具規則性之圖案瑕疵。 此瑕疵之一個例子顯示於第9圖。此第9圖係以符號 54顯示瑕疵區域。 第9圖（a)顯示由於在光束繪圖之連接處上發生位置偏 差，而單位圖案53之排列周期D Γ局部擴大的瑕疵。第9 圖（b)顯示同樣由於在光束繪圖之連接處上發生位置偏 -14- 200804796 差，單位圖案53’之位置對其他單位圖案53相對地偏差的 瑕疵。將此等顯示於第9圖（a)及第9圖（b)之瑕疵，稱爲座 標位置變動系之瑕疵。 此外，第9圖（c)及第9圖（d)顯示由於繪圖機之光束強 度不均等，單位圖案53’之大小，亦即格柵框53a’之寬 度變動的瑕疵。將此等顯示於第9圖（c)及第9圖（d)之瑕 疵，稱爲尺寸變動系之瑕疵。 (2)圖案瑕疵檢查用測試圖案基板之構造 繼續，使用第1圖（b)說明第1實施形態使用之圖案瑕 疵檢查用測試圖案基板的構造。 第1實施形態中之圖案瑕疵檢查用測試圖案基板60， 係與上述光罩50同樣地，在作爲透明支撐體之透明基板67 的主表面上，具備由薄膜（遮光膜）所構成之測試圖案66。 透明基板67之材料，係與第1實施形態同樣地，使用合成 石英玻璃基板等。此外，構成測試圖案66之薄膜材料，亦 與第1實施形態同樣地，使用鉻等具有遮光性之材料等。 測試圖案66如第1圖（b)所示，具有正方形等之以周期 性排列有測試用單位圖案6 3的形狀。另外，測試用單位圖 案63之形狀並不限定於正方形，亦可爲長方形或線狀。 測試用單位圖案63之排列周期D2，亦即單位圖案53 之排列方向上之周期，宜比重複圖案之排列周期D 1小。測 試用單位圖案63之排列周期D2宜爲單位圖案53之排列周 期D1的1 / 3以下，更宜爲1 / 5以下。此因，測試用單位 圖案與單位圖案之周期近似時，需要增大觀察後述之重疊 -15- 200804796 圖案之繞射光的凌亂之視野’而產生裝置之限制，及單位 圖案不易形成測試用單位圖案的整數倍。特別是，單位圖 案53之排列周期D1爲80 μ m以上，2000 /z m以下時，測 試用單位圖案之排列周期D2更宜爲0.1 // m以上，50 /z m 以下。此測試用單位圖案之周期範圍係容易觀察繞射光凌 亂造成之瑕疵的區域。 另外，單位圖案53之排列周期D1宜爲測試用單位圖 案63之排列周期D2的整數倍。如後述，重疊重複圖案56 與測試圖案66而形成重疊圖案70時，由於正常之各單位 圖案5 3的框內之測試用單位圖案63的排列，係與其他正 常之單位圖案53中的排列相同，因此，容易檢測以產生瑕 疵之部位的單位圖案產生之繞射光的凌亂。 此外，測試用單位圖案63之線寬（如正方形之一邊的 長度）的不均及線位置（正方形之位置）之不均，均宜限 制在指定値以下。此處，所謂指定値，宜爲30nm以下，更 宜爲20nm以下。 (3)圖案瑕疵檢查裝置 繼續，說明用於實施第1實施形態之圖案瑕疵檢查裝 置10的構造。 如第1圖（a)所示，圖案瑕疵檢查裝置1〇具有：作爲保 持手段之載台11、設於載台11斜下方而作爲照射手段之光 源裝置1 2及設於載台1.1上方而作爲攝像手段之觀察裝置 15。另外，光源裝置12具備照射光學系統13，觀察裝置 15具備受光光學系統14。 -16- 200804796 (a)載台 作爲保持手段之載台11，將測試圖案66之形成面與重 複圖案5 6之形成面相對，以保持圖案瑕疵檢查用測試圖案 基板60與光罩50。藉此，形成測試圖案66與重複圖案56 之重疊圖案70。另外，第1圖（a)係將光罩50保持於下面 側’不過’亦可將圖案瑕疵檢查用測試圖案基板60保持於 下面側。 在重疊圖案70上，需要可照射來自配置於載台11之 斜下方的光源裝置12之照射光。因而，載台1 1構成例如 僅支撐光罩50之外周部的框狀形狀。此外，如亦可由對照 射光透明之板材而構成。 載台11構成例如可在X方向及Y方向上移動之X— γ 載台。而後，藉由使形成於載台11上之重疊圖案70對觀 察裝置1 5相對地移動，可使檢查視野移動。另外，不使載 台11自由移動時，亦可使光源裝置12及觀察裝置15對載 台11自由移動。 (b)光源裝置 作爲照射手段之光源裝置12宜使用具有充分之亮度 (如照度爲1萬〜60萬Lx，並宜爲30萬Lx以上），且平行 性高（平行度爲2°以內）之光源。可滿足此種條件之光源 如爲超高壓水銀燈、氙燈、金屬鹵化物燈。 光源裝置12具備包含透鏡之照射光學系統13。照射光 學系統13配置於載台11之支撐面與光源裝置12之間，將 來自光源裝置12之光線予以平行化，並且對重疊圖案70 -17- 200804796 之被檢查部位（亦即觀察裝置1 5之檢查視野），自其斜下 方以入射角0 i照射光。 另外，第1圖（a)係將光源裝置12與照射光學系統π， 對載台11之支撐面配置於斜下方，此外，亦可對載台Η 之支撐面配置於斜上方。 (c)觀察裝置 作爲攝像手段之觀察裝置1 5，如可使用C C D相機等相 機。CCD相機係攝影二維圖像之面積相機，其視野即是檢 查視野。CCD相機之受光面配置成與被載台11支撐之重疊 圖案70相對。 觀察裝置1 5具備受光光學系統1 4，其具有對物透鏡。 受光光學系統14收集來自形成於載台11上之重疊圖案70 的繞射光，使其成像於觀察裝置15之受光面。觀察裝置15 經由受光光學系統1 4之檢查視野，設定成一次檢查如爲一 邊爲10~50mm之矩形狀。 藉由觀察裝置15攝影之繞射光的圖像宜可顯示於顯 示畫面（圖上未顯示），此外，宜可作爲圖像資料輸出至分 析裝置（圖上未顯示）。 觀察裝置15及受光光學系統14對載台11之支撐面配 置於上方。另外，將觀察裝置1 5及受光光學系統14對載 台11之支撐面配置於垂直方向時，與對載台1丨之支撐面 配置於斜方向時比較，受光光學系統14之對物透鏡與重疊 圖案70之距離均一。此時，在同一個檢查視野中，容易獲 得均一之圖像，並可防止散焦，故較佳。 •18- 200804796 (4)圖案瑕疵檢查方法 繼續，說明藉由前述之圖案瑕疵檢查裝置10實: 案瑕疵檢查方法。圖案瑕疵檢查方法具備以下步驟 由重疊測試圖案66與周期不同之重複圖案56,而形 圖案70之步驟；（b)以指定之入射角對重疊圖案70 之步驟；（c)藉由觀察來自重疊圖案70之繞射光，檢 產生於重複圖案56之瑕疵之步驟。以下，就各步驟 明。 (a)重疊圖案之形成步驟 首先，以圖案瑕疵檢查裝置1 0之載台1 1保持 圖案瑕疵檢查用測試圖案基板60與光罩50。此時， 圖案66之形成面與重複圖案56之形成面相對地保 此，形成測試圖案66與重複圖案56之重疊圖案70 此處，單位圖案53之排列周期D 1爲測試用單 63之排列周期D2的整數倍，且重複圖案56及測試I 上無瑕疵時，在各單位圖案53之框內的測試用單位 之排列係與其他單位圖案53中之排列相同。 第5圖U)係平行地保持單位圖案53之排列方向 用單位圖案63之排列方向時的重疊圖案70之部 圖。如此，在格柵狀之單位圖案5 3的框內，係以排 D2重複排列正方形之測試用單位圖案63。此外，各 案53之格柵框53a與鄰接於其格柵框53a之測試用 案63的間隔d，係與其他各單位圖案53相同。 另外，上述中，重複圖案56有瑕疵時，各單 施之圖 :⑴藉 成重疊 照射光 查有無 依序說 前述之 使測試 持。藉 〇 位圖案 圖案66 圖案63 與測試 分放大 列周期 單位圖 單位圖 位圖案 -19- 200804796 53之框內的測試用單位圖案63之排列，係與其他單位圖案 5 3中之排列不同。亦即，單位圖案5 3之排列周期D 1上產 生變動（座標位置變動系之瑕疵），並在構成單位圖案53 之格柵框53a的寬度上產生變動（尺寸變動系之瑕疵）時， 產生瑕疵之單位圖案53’圖中的格柵框53a，與鄰接於其格 柵框53a’之測試用單位圖案63的間隔d，，係與無瑕疵之前 述的間隔d不同。 0 第5圖（b)顯示格柵框53a’向上方偏差時（座標位置變 動系之瑕疵）重疊圖案70之部分放大圖。如此，格柵框53a’ 與鄰接於其之測試用單位圖案63的間隔d，係比正常情況 之間隔d窄。 (b)照射步驟 繼續，使用前述之光源裝置12，自重疊圖案70之斜下 方照射光。如此，以遮光性薄膜所形成之重疊圖案70，對 於來自光源裝置1 2之入射光，作用爲繞射格柵，而產生繞 • 射光。 亦即’重疊圖案7 0中之圖案間隔（縫隙寬）爲d，入 射光之波長爲λ，入射角爲0i時，在滿足d(sin0n±sin0 i) = n λ之關係的繞射角之方向上，觀察出^次繞射光。 如上述，無瑕疵之重疊圖案7〇，在各單位圖案5 3中之 前述間隔d係均一。因此，按照上述關係式，只要波長入、 入射角Θ i、繞射角0：1相同，來自各單位圖案53之繞射光 的觀察結果係均一。 另外，產生瑕疵之部分的重疊圖案70，係產生瑕疵之 -20 - 200804796 單位圖案53’中的前述間隔d’與無瑕疵之前述間隔d不同。 因此，來自產生瑕疵之單位圖案53’的繞射光之觀察結 果，係與來自其他正常之單位圖案53的繞射光之觀察結果 不同。亦即，來自正常之單位圖案53的繞射光以規則性產 生’而來自有瑕疵之單位圖案的繞射光產生與上述規則性 不一致之繞射光（光強度，或是產生某種強度之位置）。 (c)有無瑕疵之檢查步驟 其後，使用觀察裝置15,攝影來自前述之重疊圖案70 的繞射光，並自觀察裝置15輸出攝影結果作爲圖像資料。 第5圖（c)顯示來自重疊圖案70之繞射光的攝影結果一 個例子。黑色格柵狀之線係觀察出正常之各單位圖案53引 起的繞射光者。此處，穿過第5圖（c)之中央附近，而觀察 出與其他部分強度不同之繞射光（白色線）。觀察白色線之 位置，因爲單位圖案53’之格柵框53 a’與鄰接於此格柵框 53a’之測試用單位圖案63的間隔d’，係與其他位置之間隔 d不同，所以顯示在其部位產生與正常部位不同之繞射光， 而在繞射光之觀察結果上產生差異。亦即’表示在觀察白 色線之位置，單位圖案5 3上產生瑕疵。 另外，觀察次數高之繞射光比觀察0次繞射光（直接 光）更容易檢測微細之瑕疵。因而，宜調整繞射角0 n (觀 察裝置15之設置方向）、入射光之波長λ及入射角(光 源裝置12之設置方向），使觀察裝置15可接收次數高之η 次繞射光（n# 0)。另外，第1圖（a)係顯示觀察裝置15接 收- η次繞射光的情況。 -21- 200804796 此外，宜使用圖像分析裝置（圖上未顯示），將輸出之 圖像資料的亮度資訊予以數値化後，如藉由與臨限値（如 正常之數値資料）比較各數値，來自動檢測瑕疵。 另外，除上述方法之外，亦可藉由將亮度資訊藉由圖 像分析裝置予以數値化後之圖像資料，與將該圖像資料在 單位圖案5 3之排列方向錯開排列周期D1部分之圖像資料 相減，強調發生瑕疵部分之圖像變化，來進行瑕疵之檢測。 第5圖（d)顯示其一個例子。如此，發生瑕疵處藉由上述處 理，而形成一對正與負之峰値，則容易檢測瑕疵。 其後，保持相同之入射光的波長λ、光之入射角 及繞射角0n，使重疊圖案70在載台11上於X_Y方向移 動，檢查重疊圖案70之整個區域，而結束第1實施形態之 圖案瑕疵檢查方法。 藉由上述實施形態，達到其次之效果（1)〜（3)。 (1)藉由上述實施形態，因爲可利用繞射光實施重複圖 案56之瑕疵的宏觀檢查，所以可以短時間實施檢查，而可 提高生產性。 如高清晰度TV用之顯示裝置用基板，上述顯示裝置用 基板具有1920 (垂直）X1 080 (水平）=2, 073, 600個單位 圖案53。此處，假設使用雷射測長機或顯微鏡微觀檢查全 部之單位圖案53時，若每1個單位圖案之測定所需時間約 爲10秒，則測定全部之單位圖案53需要約240日。特別 是FPD製造用之光罩50，由於一片基板上有時2〜4面附有 單一之光罩50的重複圖案56，因此，此時單位圖案53中 -22- 200804796 之上述瑕疵檢查需要更長時間。 相對於此，本實施形態，如以前述高清晰度TV用基板 之42V型（面積約0.5m2)爲例，使用一邊爲25mm (其中， 預估與鄰接視野之重複爲1成）之正方形的檢查視野，藉 由繞射光進行上述檢查時，由於一次之檢查時間爲2.5秒 程度，因此可以40多分鐘的檢查時間來完成檢查，其生產 性高。 (2)此外，藉由本實施形態，即使重複圖案56中之單 位圖案53的排列周期〇1比使用繞射光之瑕疵檢查時適合 的周期大，藉由在重複圖案56上重疊測試圖案66而形成 重疊圖案70，觀察來自此重疊圖案70之繞射光的凌亂，仍 可檢測產生於重複圖案5 6之微細瑕疵。 如在光罩50中，重複圖案56中之單位圖案53的排列 周期D1大，如爲100~ 1000以m程度。此時，即使觀察重複 圖案56之繞射光，仍不易檢測產生於重複圖案上之瑕疵。 其原因之一，係因重複圖案56中之單位圖案53的排 列周期D1大時，來自此重複圖案56之η次繞射光的η次 繞射角，與（η+1)次繞射光之U+1)次繞射角之差非常窄，表 示存在產生於重複圖案56上之瑕疵的繞射光之凌亂被掩 蓋。 此外，其他原因爲與重複圖案5 6中之單位圖案的排列 周期D 1比較，產生於重複圖案5 6之瑕疵的大小過小。如 在光罩50中，單位圖案53之排列周期D1係.100〜1000 // m 程度，但是，因瑕疵之大小通常爲100nm程度’所以其比 -23- 200804796 率非常小而爲0.01〜0.1 %。因而，在重複圖案之繞射光 自重複圖案56之繞射光檢測表示存在瑕疵之凌亂係困 相對於此，本實施形態即使單位圖案5 3之排列 D1大時，藉由形成前述之重疊圖案70,來觀察來自重 案70之繞射光的凌亂，仍可檢測產生於重複圖案56 微細瑕疵。亦即，可藉由將產生於重複圖案56上之線 位置瑕疵替換成重疊圖案70之線寬（間隙）的異常來檢 [B]第2及第3實施形態 第2及第3實施形態中之圖案瑕疵檢查方法，與 第1實施形態不同之處爲重疊圖案之形成步驟。 第2實施形態中之重疊圖案的形成步驟，如第2 示，係在圖案瑕疵檢查用測試圖案基板60與光罩50之 經由對照射光透明之樹脂膜80保持，而形成重疊圖案 此外，第3實施形態中之重疊圖案形成步驟，如 圖所示，係在圖案瑕疵檢查用測試圖案基板60與光】 之間，經由間隔物8 1保持，而形成重疊圖案70。 另外，測試圖案66之形成面與重複圖案56之形 的距離過大時，重疊圖案70不易解像，過小時，可能 案接觸而造成損傷。因而，爲了獲得來自重疊圖案7 0 射光，測試圖案66之形成面與重複圖案5 6之形成面 離宜爲0.2#m以上，15/zm以下。此範圍可用作上述 膜之厚度及間隔物之高度的基準。 藉由第2及第3實施形態，可防止因測試圖案66 複圖案56·直接接觸而造成圖案形成面之損傷。 中， 難。 周期 豐圖 上之 寬或 【測。 前述 圖所 :間， 70 〇 第3 i 50 成面 因圖 之繞 的距 樹脂 與重 -24- 200804796 [C]第4實施形態 第4實施形態中之圖案瑕疵檢查方法，與前述第1實 施形態不同之處爲圖案瑕疵檢查裝置之構造及重疊圖案之 形成步驟。以下，首先說明第4實施形態中之圖案瑕疵檢 查裝置40的構造。其後，說明第4實施形態中之圖案瑕疵 檢查方法的重疊圖案形成步驟。 (1)圖案瑕疵檢查裝置 如第4圖所示，第4實施形態之圖案瑕疵檢查裝置40 具有：作爲保持手段之載台21、設於載台21下方作爲投影 手段之光源裝置22及投影光學系統23、及設於載台21上 方作爲攝像手段之觀察裝置25。另外，觀察裝置25具備受 光光學系統24。 作爲保持手段之載台21使重複圖案56之形成面在下 面，來保持作爲被檢查基板之光罩50。另外，重複圖案56 形成於透明基板上時，亦可使重複圖案56之形成面在上面 而保持。 載台21如構成框狀之形狀，而僅支撐光罩50之外周 部。另外，亦可使來自配置於下方之光源裝置22的投影光 照射於重複圖案5 6上’而爲例如由對照射光透明之材料所 構成的板材。 就載台21作爲X - Y載台而構成方面，係與第1實施 形態相同。 構成投影手段之光源裝置22，對被保持構件23a保持 之圖案瑕疵檢查用測試圖案基板60照射光。光源裝置22 -25- 200804796 使用具有充分之亮度（如照度爲1萬〜60萬Lx，並宜 萬Lx以上），且平行性高（平行度爲2°以內）之超高 銀燈、氙燈、金屬鹵化物燈方面，係與第1實施形態相 構成投影手段之投影光學系統23，係被設置於光 置22與載台21之支撐面之間，並自光源裝置22起依 備：用於保持圖案瑕疵檢查用測試圖案基板60之保持 23a ;用於自通過測試圖案66之透過光遮住不需要部 光的孔徑23b ;及用於接收通過孔徑23b之透過光，而 試圖案66之圖像成像於重複圖案56上的成像透鏡群 藉由使測試圖案66之圖像成像於重複圖案56上 第1實施形態同樣地形成重疊圖案70，而自重疊圖; 發生繞射光。 光源裝置22及投影光學系統23對載台21之支撐 置於下方。另外，光源裝置22及投影光學系統23對 2 1之支撐面配置於垂直方向時，投影光學系統23與重 案56之距離均等。此時之優點爲，容易使投影於重複 56上之測試圖案66的圖像均一化，並可防止散焦。 作爲攝像手段之觀察裝置25及受光光學系統24: 第1實施形態同樣地構成。不過，如第1實施形態中戶 觀察裝置25宜接收繞射光中絕對値比0次繞射光大之 的繞射光（η次繞射光）。因而，光源裝置22及投影光 統23對載台21之支撐面配置於垂直方向時，觀察裝 及受光光學系統24宜對載台21之支撐面配置於斜上 (2)圖案瑕疵檢查步驟 爲30 壓水 同。 源裝 序具 構件 分之 使測 23c ° ，與 % 70 面配 載台 複圖 圖案 係與 ί述， 次數 學系 置25 方0 -26- 200804796 繼續，說明使用前述之圖案瑕疵檢查裝置40的圖案瑕 疵檢查方法。第4實施形態之圖案瑕疵檢查方法具備以下 步驟：U)在周期性排列測試用單位圖案63所形成之測試圖 案66上，以指定之入射角照射光之步驟；（b)藉由使通過測 試圖案66之透過光成像於重複圖案5 6上，而形成重疊圖 案70之步驟；（c)藉由觀察來自重疊圖案70之繞射光，以 檢查有無產生於重複圖案56上之瑕疵之步驟。以下，就各 步驟依序作說明。 (a) 照射步驟 首先，在保持構件2 3 a上保持圖案瑕疵檢查用測試圖 案基板60。其後，使用光源裝置22，對圖案瑕疵檢查用測 試圖案基板60照射光。 (b) 形成重疊圖案之步驟 其後，使用成像透鏡群23c，接收通過孔徑23b之透過 光，而使測試圖案66之圖像66’成像於重複圖案56上。 藉由以上步驟，形成重疊重複圖案5 6與測試圖案66 之圖像66’的重疊圖案70。另外，與第1實施形態同樣地， 自重疊圖案70發生繞射光。 (c) 有無瑕疵之檢查步驟 其後，與第1實施形態同樣地，使用觀察裝置25攝影 來自重疊圖案70之繞射光，輸出其結果作爲圖像資料，檢 查有無產生於重複圖案56上之瑕疵。 藉由第4實施形態，測試圖案66之形成面與重複圖案 5 6之形成面不直接接觸而可相對，可防止因測試圖案66 -27- 200804796 與重複圖案56接觸而造成圖案形成面之損傷。 [D]第5實施形態 第5實施形態中之圖案瑕疵檢查方法與前述第4實 形態不同之處爲，在載台2 1上保持圖案瑕疵檢查用測試 案基板60,並在投影光學系統23之保持構件23a上保持 罩50。亦即光罩50及圖案瑕疵檢查用測試圖案基板60 保持位置與第4實施形態中之圖案瑕疵檢查方法相反。 藉由第5實施形態，測試圖案66之形成面與重複圖 56之形成面不直接接觸而可相對，可防止因測試圖案 與重複圖案56接觸而造成圖案形成面之損傷。 藉由第5實施形態，由於單位圖案53之排列周期 係比測試用單位圖案63之排列周期D2大，因此可較容 地使重複圖案5 6之圖像成像於測試圖案66上。亦即， 降低對投影光學系統23要求之光學性能，藉此，可降低 案瑕疵檢查裝置之成本。 [E]第6實施形態 第6實施形態中之圖案瑕疵檢查方法與前述第1至 4實施形態不同之處爲，單位圖案5 3之排列方向與測試 單位圖案63之排列方向彼此不平行，且彼此不正交地形 重疊圖案70。亦即，在該情況下，單位圖案53之格柵 53a與測試用單位圖案63之排列方向係傾斜地交叉。 第7圖顯示重疊圖案70之部分放大圖。此時，格柵 53a與鄰接於此格柵框53a之測試用單位圖案63的間隔 係並非一定，而依重疊圖案70上之位置而變化。如第Ί 施 圖 光 之 案 66 D1 易 可 圖 第 用 成 框 框 d， 圖 -28- 200804796 中之區域A1，因爲格柵框53a向右下方傾斜，所以，隨著 自格柵框5 3 a與測試用單位圖案6 3之交叉點向右行進，間 隔d之大小擴大。 在藉由第6實施形態所形成之重疊圖案70上照射光 時，如前述，於入射光之波長爲λ，入射角爲0 i時，在滿 足d(sin0 n±sin(9i) = nA之關係的繞射角0 η之方向上，觀 察出η次繞射光。 亦即，如藉由第6實施形態所形成之重疊圖案7 0，間 隔d之大小依位置而變化時，依據上述之關係式，只要波 長λ、入射角0i、繞射角0n保持一定，觀察之繞射光係 依重疊圖案70上之檢查位置而不同。 此處，構成重複圖案5 6之單位圖案53係正常時，重 疊圖案中之間隔d的大小變化係以一定周期重複。此時， 產生於重複圖案56之各部分的繞射光亦觀察出以一定周 期而重複。 但是，在構成重複圖案56之單位圖案53上產生瑕疵 時，瑕疵部之區域A2中之上述間隔d的變化，係與上述之 正常部不同。亦即，與正常部不同之圖案產生繞射光。如 第7圖中以實線表示之格柵框5 3 a，原本係應配置於以虛線 表示之位置者’結果偏差至以實線表示之位置（座標位置 變動系之瑕疵）。此時，以虛線表示之區域A2的原本位置 向右側移動至以實線表示之區域A2，。因此，此瑕疵部觀 察出與正常之重複圖案56不同的繞射光（不同之強度，或 是成爲某個強度之部分不同的位置）。 -29- 200804796 如上述，藉由觀察產生從一定之規則性脫離之繞射光 的區域A2,之位置，可檢測與區域A2之位置的偏差，並可 檢查有無產生於重複圖案5 6上之瑕疵。 第8圖顯示來自第6實施形態之重疊圖案70的繞射光 之拍攝結果一個例子。第8圖中，左半部之,黑色格柵狀線 條，係因構成正常之各單位圖案5 3的格柵框5 3 a造成之繞 射光圖案b在第8圖之右半部周期性觀察出與其他部分強 度不同之繞射光（白色線條）。亦即，白色線條之觀察位置， φ 係表示繞射光之強度依上述間隔d之變化而變化的區域 A 1。而在第8圖右半部之中央附近，上述白色線條之觀察 位置移動至比其他白色線條更右側。亦即，表示在移動之 位置上產生瑕疵。 . .... 單位圖案53之格柵框53a與測試用單位圖案63之排 列方向交叉的角度5，於角度5過大時，即使在狹窄之視 野內仍可確實檢測出繞射光之凌亂（上述之移動），另外， φ 上述之移動量小，則檢測困難。相反的，角度過小時，即 使上述之移動量大，但在狹窄之視野內確實檢測仍困難。 因此，單位圖案53之格柵框53a與測試用單位圖案63 -* , - —. 之排列方向交叉的角度5，係宜爲〇 · 〇 1度至2度之範圍。 此外，重複圖案5 6與測試圖案6 6可爲相同之圖案， 亦可爲不同之圖案。此外，爲不同之圖案時，單位圖案53 之排列周期D 1與測試用單位圖案63之排列周期D2亦是可 相同亦可不同。此時，即使排列周期D1比排列周期d 2小 亦無妨。不過，與上述之情況相同，排列周期1宜爲排列 -30- 200804796 周期D2之整數倍。 以上，第6實施形態中，使單位圖案53之排列方向與 測試用單位圖案63之排列方向傾斜地交叉。藉此，即使測 試用單位圖案63之排列周期D2比單位圖案5 3之排列周期 D1大時，仍可在重疊圖案70上周期地製作出間隔d之大 小在一定範圍內變化之區域A2。因而，可檢查有無產生於 重複圖案56之瑕疵。 特別是將第6實施形態適用於前述第5實施形態時， 因爲可增大測試用單位圖案63之排列周期D2，所以可較 容易地將測試圖案66之圖像成像。亦即，因爲可降低對投 影光學系統23要求之光學性能，所以可降低圖案瑕疵檢查 裝置之成本。 此外，形成重疊圖案70時，因爲無須將單位圖案53 之排列方向與測試用單位圖案63之排列方向保持完全地 平行，所以可提高檢查作業之效率。 另外，第6圖係將單位圖案5 3之排列方向與測試用單 位圖案63之排列方向保持平行而形成之重疊圖案70的部 分放大圖。 此時，因爲單位圖案53之排列周期D1比測試用單位 圖案63之排列周期D2大，以致測試用單位圖案63與單位 圖案5 3重疊。因而不存在可觀察繞射光之凌亂的區域，此 外，即使重複圖案56上產生瑕疵，繞射光仍不凌亂，瑕疵 檢測困難。因此，以單位圖案53之排列方向與測試用單位 圖案63之排列方向彼此不平行且彼此不正交地形成重疊 •31- 200804796 圖案70爲有利。 [E]光罩之製造方法 繼續，說明具有使用本發明第1至第6實施形態所示 之圖案瑕疵檢查方法，檢查有無產生於重複圖案56之瑕疵 的步驟之光罩50的製造方法。 此光罩50之製造步驟，係依序實施：遮罩素板製造步 驟、抗蝕圖案形成步驟、遮罩圖案形成步驟及瑕疵檢查步 驟者。 遮罩素板製造步驟係在透明基板57之表面形成遮光 膜等之薄膜，並在此薄膜上塗布抗蝕層，而形成抗蝕膜。 藉此，製造疊層構造之遮罩素板。 抗蝕圖案形成步驟係藉由繪圖機在遮罩素板之抗餽膜 上，如照射雷射光束，使用光柵繪圖方式等任意之方式繪 圖，在該抗蝕膜上將指定之圖案曝光並予以顯像而形成抗 蝕圖案。此抗蝕圖案上設有用於形成重複圖案56之圖案。 遮罩圖案形成步驟係將抗蝕圖案作爲遮罩，來蝕刻上 述薄膜，而在此薄膜上形成重複圖案56。此時，重複圖案 56中之單位圖案53的周期，按照欲使用該光罩製造之裝置 的用途而適當地設定，如在液晶顯示面板等之顯示裝置用 基板上設定成80〜2000 /zm。此外，亦可爲在1片基板上， 於2〜4面形成單一之光罩50的重複圖案56者。在薄膜上 形成圖案後，藉由蝕刻除去抗鈾層。 瑕疵檢查步驟係將本發明之第1至第4實施形態所示 之圖案瑕疵檢查方法，作、爲光罩50之製造步驟的一環來實 -32- 200804796 施，而完成光罩50之製造。此處，本發明之瑕疵檢查步驟 亦可使用抗蝕圖案來進行，亦可除去抗蝕層後，使用薄膜 圖案來進行。於使用抗蝕圖案進行時，因抑止薄膜圖案之 損傷，故較佳。 其後，使用此光罩50進行曝光，而在顯示裝置用基板 上的抗蝕膜上轉印光罩50之遮罩圖案。其後，依據此轉印 圖案，將像素圖案形成於顯示裝置用基板之表面，而完成 _ 顯示裝置用基板之製造。另外，上述所謂像素圖案，如係 液晶顯示面板之薄膜電晶體、相對基板、濾色器等之重複 圖案。 藉由上述實施形態，可達到其次之效果（1)〜（3)。 (1) 藉由上述實施形態，因爲可利用繞射光實施重複圖 案56之瑕疵的宏觀檢查，所以可以短時間實施檢查，而可 提高光罩5 0之生產性。 (2) 此外，藉由實施形態，在光罩50中，即使重複圖 φ 案56中之單位圖案53的排列周期D1比容易進行繞射光之 瑕疵檢查的周期大時，藉由在重複圖案56上重疊測試圖案 66而形成重疊圖案70，觀察來自重疊圖案70之繞射光的 凌亂，仍可檢測產生於重複圖案56之微細瑕疵。 (3) 由於使用藉由上述光罩之製造方法所製造的光罩 50，形成像素圖案，來製造顯示裝置用基板（如液晶顯示 面板），因此可形成像素圖案中無瑕疵之顯示裝置用基板。 【圖式簡單說明】 第1圖係說明本發明之圖案瑕疵檢查方法中的第1實 •33- 200804796 施形態之圖，u)顯示用於實施第1實施形態之圖案瑕疵檢 查裝置的槪略側面圖，（b)顯示圖案瑕疵檢查用測試圖案基 板具備之測試圖案的部分放大圖，（c)顯示被檢查體具備之 重複圖案的部分放大圖。 第2圖顯示用於實施本發明之圖案瑕疵檢查方法中的 第2實施形態之圖案瑕疵檢查裝置的槪略側面圖。 第3圖顯示用於實施本發明之圖案瑕疵檢查方法中的 第3實施形態之圖案瑕疵檢查裝置的槪略側面圖。 第4圖顯示用於實施本發明之圖案瑕疵檢查方法中的 第4實施形態之圖案瑕疵檢查裝置的槪略側面圖。 第5圖係重疊重複圖案與測試圖案之重疊圖案、來自 重疊圖案之繞射光及瑕疵之檢測結果的說明圖，U)顯示測 試僵案與正常重複圖案之重疊圖案的部分放大圖，（b)顯示 測試圖案與包含瑕疵之重複圖案之重疊圖案的部分放大圖 ，（c)顯示自重疊圖案獲得之繞射光的攝影結果，（d)顯示使 用繞射光之攝影結果的瑕疵檢測結果。 第6圖顯示重複圖案具有之單位圖案的排列方向，與 測試圖案具有之測試用單位圖案的排列方向彼此平行所形 成之重疊圖案的部分放大圖。 第7圖顯示重複圖案具有之單位圖案的排列方向，與 測試圖案具有之測試用單位圖案的排列方向彼此不平行， 且不正交所形成之重疊圖案的部分放大圖。 第8圖顯示自第7圖所示之重疊圖案獲得之繞射光的 攝影結果 34 - 200804796 第9圖顯示產生於被檢查體具備之重複圖案上的瑕疵 ，（a)及（b)顯示座標位置變動系之瑕疵，（c)及（d)顯示尺寸 變動系之瑕疵。 第10圖係顯示作爲被檢查體之光罩的平面圖。 【主要元件符號說明】[Technical Field] The present invention relates to a pattern inspection method for detecting defects generated on a repeating pattern in which a unit pattern is periodically arranged, a test pattern substrate for pattern inspection, and a pattern 瑕疵The inspection apparatus and the method of manufacturing the pattern mask, the method of manufacturing the mask of the mask, and the method of manufacturing the substrate for the display device. [Prior Art] There is a pattern in which a repeating pattern of a unit pattern is periodically arranged on the surface of a substrate for a device or a mask for manufacturing a substrate for a device. This unit pattern originally had to be regularly arranged, but sometimes the regularly arranged pattern contained errors, which had different regularities that were unexpected. This error, also known as non-uniformity, occurs during the manufacturing step for some reason. When the aforementioned flaw is generated in the substrate for a display device, there is a problem that display unevenness occurs. Further, when the crucible is produced in the photomask used in the manufacture of the display device, the crucible is transferred onto the pattern formed on the substrate of the display device, and the influence of the problem is increased. Therefore, the above-mentioned device substrate, mask, and the like need to be used as the object to be inspected to check whether or not the pattern is generated on the repeating pattern. As described above, generally, since fine ridges are regularly arranged, it is difficult to detect the shape of each pattern, and when viewed as an entire area, it may be different from other parts. In addition, even if the shape of each unit pattern can be examined microscopically, it is still difficult from the viewpoint of cost and time. On the contrary, when macroscopically viewing a wide area including a plurality of unit patterns, it is often easier to detect. Therefore, it was previously checked for the presence or absence of flaws by visually performing a slanting inspection. However, if the oblique inspection is performed visually, there may be a problem that the inspection result is different depending on the operator. Therefore, it is preferable to perform the oblique inspection by visual inspection. Japanese Laid-Open Patent Publication No. Hei 9-329555 (hereinafter referred to as "Patent Document 1") discloses a macroscopic inspection device for a semiconductor device substrate manufactured from a semiconductor wafer, which is a conventional method for automating visual oblique inspection. technology. This device fully condenses the wafer into a single field of view to check for defocus due to focus deviation, dust (particles) underneath the wafer, and wafer development/etching/peeling steps. This leads to surface defects in the periodic construction of the surface of the semiconductor wafer. The device disclosed in Patent Document 1 has a light source that illuminates light of a desired wavelength on a repeating pattern formed on a surface of a semiconductor wafer, a camera that receives diffracted light from a surface of the substrate, and a detecting means for the light source The flaw is detected by comparing the image data taken with the camera with the innocent reference data. Then, the diffracted light from the repeating pattern is observed by detecting the disorder to detect the flaw occurring on the repeating pattern. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) The apparatus of Patent Document 1 is applicable to a case where the period of the repeating pattern is not more than a certain degree, and 50 is equal to or less than m. For example, the above-described defects generated in a repeating pattern of a semiconductor device having a period of 2/m or less, or the above-described flaws generated in a repeating pattern of a cover for a semiconductor device manufactured by a light of a semiconductor device of a degree of 15 m or less. However, the apparatus of the patent document 1 is a substrate for a display device such as a liquid crystal display panel, and a photomask for manufacturing a substrate for a display device, and the arrangement period of the unit pattern in the repeating pattern is large, for example, about 100 to 1000 /zm. Even if the diffracted light from the repeating pattern is observed, it is not easy to detect flaws. An object of the present invention is to provide a pattern inspection method for detecting the presence or absence of a fine pattern generated in a repeating pattern, a test pattern substrate for pattern inspection, a pattern inspection apparatus, a method of manufacturing a mask, and a substrate for a display device. Production method. (Means for Solving the Problem) The pattern flaw inspection method according to the first aspect of the present invention is for detecting a flaw which is generated on the repeating pattern of a test object having a repeating pattern in which a unit pattern is periodically arranged, and is provided The following steps: a step of forming an overlapping pattern by superimposing a test pattern formed by periodically arranging the test unit pattern with a period different from the period of the repeating pattern, and forming the overlapping pattern with the specified incident angle The step of patterning the light = and the step of observing the presence or absence of the flaw generated on the repeating pattern by observing the diffracted light from the aforementioned overlapping pattern. Further, in the first invention for solving the above-mentioned problems, it is preferable that the overlapping step is performed by holding the surface on which the test pattern is formed and the surface on which the repeating pattern is formed, thereby maintaining the aforementioned main surface of one of the transparent supports. The test pattern forms an overlapping pattern with the repeating pattern formed on one main surface of the other transparent support. In this case, the formation surface of the test pattern and the formation surface of the repeat pattern are preferably spaced apart by a specified interval. 200804796 Parallel to each other, in addition, the above specified interval should be 0. 1 // m or more, 30 // m or less. The pattern flaw inspection method according to the second aspect of the present invention is directed to inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and has the following steps: Incident angle, a step of illuminating the test pattern formed by periodically arranging the test unit pattern; forming a superimposed pattern by imaging transmitted light passing through the test pattern onto the repeating pattern; and observing from The light of the above-mentioned overlapping pattern is diffracted to check whether or not there is a defect generated on the above-mentioned repeating pattern. The pattern flaw inspection method according to the third aspect of the present invention is directed to inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and has the following steps: An incident angle, a step of irradiating light to the repeating pattern; forming a superimposed pattern by imaging transmitted light passing through the repeating pattern onto a test pattern formed by periodically arranging test unit patterns; and by observing The diffracted light from the aforementioned overlapping pattern is examined for the presence or absence of defects generated on the aforementioned repeating pattern. Further, in the first to third aspects of the invention, it is preferable that the arrangement period of the unit pattern is larger than the arrangement period of the unit pattern for testing. In particular, it is preferable that the arrangement period of the unit pattern is an integral multiple of the arrangement period of the test unit pattern. More preferably, the arrangement period of the unit pattern is 80 μm or more, 2000 200804796 μm or less, and the arrangement period of the unit pattern for the test is 〇.  1 v m or more, below 50/z m. Further, in the first to third aspects of the invention, in the step of forming the superimposed pattern, the overlapping pattern may be formed such that the arrangement direction of the unit pattern and the arrangement direction of the unit pattern for testing are parallel to each other. In this case, since the overlapping pattern is formed in a state in which the unit pattern and the unit pattern for test are aligned, it is easy to observe the disorder of the diffracted light in a certain inspection field. Further, in the first to third aspects of the present invention, in the step of forming the overlapping pattern, the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern may not be parallel to each other and may not be orthogonal to each other. The aforementioned overlapping pattern is formed. Thus, it is preferable to reduce the difficulty in aligning the unit pattern and the unit pattern for the test in parallel with the alignment of the unit patterns. In addition, in this case, the arrangement direction of the unit pattern and the arrangement direction of the test pattern are preferably 0. The above-mentioned overlapping pattern is formed in such a manner that the angles of 2 degrees or less and 2 degrees or less intersect each other to make it easy to find flaws. The pattern flaw inspection method according to the fourth aspect of the present invention is directed to inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and has the following steps: The arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are not parallel to each other and are not orthogonal to each other, and the test pattern formed by periodically arranging the test unit pattern is overlapped with the repeat pattern to form an overlap pattern. a step of irradiating light to the above-mentioned overlay pattern 200804796 at a specified incident angle; and a step of observing the presence or absence of a flaw generated on the repeating pattern by observing the diffracted light from the overlapping pattern. In order to solve the above-mentioned problem, the formation surface of the test pattern and the formation surface of the repeating pattern are preferably spaced apart from each other by a predetermined interval, and the predetermined interval is preferably 0. 1 V m or more, 30# m or less. The test pattern substrate for pattern inspection according to the fifth aspect of the present invention includes: a transparent substrate; and a test pattern formed by periodically arranging a test unit pattern on a main surface of the transparent substrate, wherein the test unit pattern is The arrangement period is 0. 1 / m or more and 50 / / m or less, the variation of the line width of the test unit pattern and the variation of the line position are all 30 nm or less. A pattern inspection apparatus according to a sixth aspect of the present invention is directed to a crucible for inspecting a pattern of a test object which is generated on the pattern, and includes a holding means for inspecting a pattern having a test pattern. The test pattern substrate and the object to be inspected are stacked at a predetermined interval to form a superimposed pattern, and the irradiation means is for irradiating the superimposed pattern with light at a predetermined incident angle; and an imaging means For observing the diffracted light from the aforementioned overlapping pattern. A pattern inspection apparatus according to a seventh aspect of the present invention is directed to a crucible for inspecting a pattern of a test object which is generated on the pattern, and includes: a holding means for inspecting a pattern having a test pattern The test pattern substrate and the object to be inspected are stacked at a predetermined interval to form an overlapping pattern, and the irradiation means is for irradiating the overlapping pattern with an incident angle specified by -10-200804796; and imaging Means are used to observe the diffracted light from the aforementioned overlapping pattern. In the pattern flaw inspection apparatus according to the eighth aspect of the invention, the inspection apparatus having the pattern is formed on the pattern, and the holding means is for holding the object to be inspected; The specified incident angle illuminates the test pattern with the transmitted light of the test pattern on the pattern, thereby stacking the pattern; and the imaging means for observing the presence or absence of the generated light by observing the diffracted light from the foregoing case In the pattern inspection apparatus according to the ninth aspect of the invention, in the pattern, the inspection apparatus having the pattern is formed on the pattern, and the holding means is for holding the test pattern; For forming a light by irradiating light to the pattern at a specified incident angle, and imaging the transmitted light of the through pattern on the test pattern; and imaging means, by observing the winding from the overlapping pattern to check whether or not The above repeating pattern is on top of it. The method for producing a mask according to the tenth aspect of the present invention, wherein the pattern inspection method according to the first to ninth aspects of the invention, the pattern pattern test pattern substrate or the pattern inspection apparatus are used to inspect the presence or absence of the flaw on the repeating pattern. . In the substrate method for a display device according to the eleventh aspect of the invention, a mask is produced by using the mask manufacturing method of the tenth invention, and a pixel pattern is formed to manufacture a substrate for a display device. (Effect of the invention), the system uses a 瑕疵, a projection hand to form a super-overlapping pattern, and uses a 瑕疵, a means to emit light through the overlapping pattern, and has a 疵 inspection to produce a light -11-200804796 The present invention can provide a pattern inspection method capable of inspecting the presence or absence of a fine pattern generated in a repeating pattern for a short period of time, a test pattern substrate and a pattern inspection apparatus for pattern inspection, a method of manufacturing a mask, and a method of manufacturing a substrate for a display device . [Embodiment] Hereinafter, the best mode for carrying out the invention will be described with reference to the drawings. In the drawings, Fig. 1 is a view showing a first embodiment of the pattern inspection method according to the present invention, and (a) is a schematic side view showing the pattern inspection apparatus 10 according to the first embodiment. (b) A partial enlarged view of the test pattern included in the pattern 瑕疵 inspection test pattern substrate, and (c) a partial enlarged view showing the repeating pattern of the object to be inspected. In addition, FIG. 5 is an explanatory diagram of an overlapping pattern of overlapping repeat patterns and test patterns, a diffraction result from the overlapping patterns, and a detection result of 瑕疵, U) a partial enlarged view showing an overlapping pattern of the test pattern and the normal repeating pattern, (b) A partial enlarged view showing the overlapping pattern of the test pattern and the repeated pattern including 瑕疵, (c) showing the photographic result of the diffracted light obtained from the overlapping pattern, and (d) showing the 瑕疵 detection result using the photographic result of the diffracted light. On the other hand, Fig. 9 shows the 产生, U) and (b) which appear on the repeating pattern of the object to be inspected, and (c) and (d) show the dimensional change system. (Line width 瑕疵). Further, Fig. 2 to Fig. 4 are schematic side views showing the pattern inspection apparatuses 20, 30, and 40 of the second to fourth embodiments for carrying out the pattern inspection method of the present invention. [A] First Embodiment -12-200804796 Hereinafter, (1) the structure of the object to be inspected in the pattern inspection method according to the first embodiment, and (2) the pattern used in the pattern inspection method瑕疵The structure of the test pattern substrate for inspection. Next, the description will be given (3) the structure of the pattern inspection apparatus, and finally, (4) the pattern inspection method using the pattern inspection apparatus. (1) Structure of the test object First, the structure of the test object will be described using Figs. 1(c), 9 and 10 . In the pattern inspection method of the first embodiment, the mask 50 shown in Fig. 10 is used as the object to be inspected. When the photomask 50 is used as a substrate for a display device such as a liquid crystal display device (particularly, a flat panel display: FPD), a plasma display device, an EL display device, an LED display device, or a DMD display device Exposure mask. The reticle 50 for such display devices can be used as a large substrate having a side L1 or L2 exceeding lm. The mask 50 as the object to be inspected has a repeating pattern 56 composed of a film (light-shielding film) on the main surface of the transparent substrate 57 as a transparent support. The material of the transparent substrate 57 is, for example, a synthetic quartz glass substrate or the like. Further, the film material constituting the repeating pattern 56 is made of a material having a light-shielding property such as chromium or a semi-translucent material. Further, the film is not limited to a single layer, and may be laminated. In this case, in addition to the light-shielding film, a film having a semi-translucent property may be used, and a functional film such as a stop layer may be applied. Further, the above film may be accompanied by a resist film. As shown in Fig. 1(c), the repeating pattern 56 has a shape of a unit pattern 53 which is periodically arranged in a grid of -13 - 200804796. The arrangement period D1 of the unit pattern 53, that is, the period of the arrangement in the arrangement direction of the unit pattern 53, is set to 80 to 2 000 // m 〇 continues, which is generated after the repeating pattern 56, and is manufactured in cooperation with the mask 50. The method is explained. The manufacture of the photomask 50 is usually carried out by the following steps (1) to (5). (1) First, a thin film (light shielding film) is formed on the transparent substrate 57, and a resist film is formed on the thin film. (2) Next, using a plotter, a light such as a laser is irradiated onto the resist film, and drawing is performed by an arbitrary drawing method such as a raster drawing method, and the designated pattern is exposed. (3) Next, development is performed to selectively remove the drawing portion or the non-drawing portion to form a resist pattern. (4) Thereafter, the resist pattern is masked to etch the film, and a repeating pattern 56 is formed on the film. (5) Finally, the residual resist layer is removed, and the manufacture of the mask 50 shown in Fig. 10 is completed. Further, in the case of a multilayer film, an additional step depending on the material of the film may be provided. Here, as in the above step (2), there may be a case where the scanning accuracy of the laser light suddenly deteriorates, or the beam diameter suddenly changes, or the environmental factor changes, and the like, the ruthenium may occur in the repeating pattern 56. In addition, for a variety of reasons, a regular pattern will be produced. An example of this is shown in Figure 9. This ninth figure shows the 瑕疵 area by the symbol 54. Fig. 9(a) shows a Γ which is partially enlarged by the arrangement period D 单位 of the unit pattern 53 due to the positional deviation occurring at the junction of the beam drawing. Fig. 9(b) shows that the position of the unit pattern 53' is relatively deviated from the other unit patterns 53 due to the positional deviation of -14 - 200804796 at the junction of the beam drawing. These are shown in Fig. 9(a) and Fig. 9(b), which are called the coordinate position change system. Further, Fig. 9(c) and Fig. 9(d) show the size of the unit pattern 53', i.e., the width of the grid frame 53a', due to the unevenness of the beam intensity of the plotter. These are shown in Figure 9(c) and Figure 9(d), which are called the dimensional change system. (2) Structure of the test pattern substrate for pattern inspection Next, the structure of the pattern test substrate for pattern inspection used in the first embodiment will be described with reference to Fig. 1(b). In the same manner as the photomask 50, the test pattern substrate 60 for pattern inspection in the first embodiment has a test pattern composed of a film (light-shielding film) on the main surface of the transparent substrate 67 as a transparent support. 66. The material of the transparent substrate 67 is a synthetic quartz glass substrate or the like as in the first embodiment. Further, similarly to the first embodiment, the film material constituting the test pattern 66 is made of a material having light blocking properties such as chromium. As shown in Fig. 1(b), the test pattern 66 has a square or the like in which the test unit pattern 63 is periodically arranged. Further, the shape of the test unit pattern 63 is not limited to a square shape, and may be rectangular or linear. The arrangement period D2 of the test unit pattern 63, that is, the period in the arrangement direction of the unit pattern 53, is preferably smaller than the arrangement period D1 of the repeating pattern. The arrangement period D2 of the test unit pattern 63 is preferably 1 / 3 or less of the arrangement period D1 of the unit pattern 53, and more preferably 1 / 5 or less. For this reason, when the unit pattern for the test is approximated to the period of the unit pattern, it is necessary to increase the distracting field of view of the diffracted light of the -15-200804796 pattern described later, and the device is limited, and the unit pattern is difficult to form the test unit pattern. Integer multiple. In particular, when the arrangement period D1 of the unit pattern 53 is 80 μm or more and 2000 / z m or less, the arrangement period D2 of the test unit pattern is more preferably 0. 1 // m or more, 50 / z m or less. The period range of the unit pattern for this test is easy to observe the area caused by the entanglement of the diffracted light. Further, the arrangement period D1 of the unit pattern 53 is preferably an integral multiple of the arrangement period D2 of the test unit pattern 63. As will be described later, when the overlapping pattern 56 is formed by overlapping the repeating pattern 56 and the test pattern 66, the arrangement of the test unit patterns 63 in the frame of the normal unit patterns 53 is the same as that in the other normal unit patterns 53. Therefore, it is easy to detect the disorder of the diffracted light generated by the unit pattern of the portion where the flaw is generated. Further, the unevenness of the line width of the test unit pattern 63 (e.g., the length of one side of the square) and the unevenness of the line position (the position of the square) are preferably limited to the specified 値. Here, the designated enthalpy is preferably 30 nm or less, and more preferably 20 nm or less. (3) Pattern inspection apparatus Next, the structure for carrying out the pattern inspection apparatus 10 of the first embodiment will be described. As shown in Fig. 1(a), the pattern inspection device 1A has a stage 11 as a holding means, a light source unit 12 provided as an irradiation means obliquely below the stage 11, and a stage 1. 1 is an observation device 15 as an imaging means. Further, the light source device 12 includes an illumination optical system 13, and the observation device 15 includes a light receiving optical system 14. -16- 200804796 (a) Stage The stage 11 as the holding means faces the formation surface of the test pattern 66 and the formation surface of the repeating pattern 56 to hold the pattern inspection test pattern substrate 60 and the mask 50. Thereby, the overlapping pattern 70 of the test pattern 66 and the repeating pattern 56 is formed. Further, in Fig. 1(a), the mask 50 is held on the lower side, but the pattern test substrate 60 for pattern inspection can be held on the lower side. In the overlap pattern 70, it is necessary to illuminate the illumination light from the light source device 12 disposed obliquely below the stage 11. Therefore, the stage 1 1 constitutes, for example, a frame shape that supports only the outer peripheral portion of the mask 50. In addition, it can also be constructed by contrasting a sheet of light that is transparent. The stage 11 constitutes, for example, an X-γ stage that can move in the X direction and the Y direction. Then, by moving the superimposing pattern 70 formed on the stage 11 relatively to the observation device 15, the inspection visual field can be moved. Further, when the stage 11 is not freely moved, the light source device 12 and the observation device 15 can be freely moved to the stage 11. (b) The light source device as the light source device 12 is preferably used with sufficient brightness (for example, illuminance of 10,000 to 600,000 Lx, and preferably 300,000 Lx or more), and high parallelism (parallelism of 2 or less) Light source. Light sources that can satisfy such conditions are ultra-high pressure mercury lamps, xenon lamps, and metal halide lamps. The light source device 12 is provided with an illumination optical system 13 including a lens. The illumination optical system 13 is disposed between the support surface of the stage 11 and the light source device 12, and parallelizes the light from the light source device 12, and the portion to be inspected of the overlap pattern 70-17-200804796 (that is, the observation device 15) The inspection field of view is illuminated from the oblique angle below the incident angle 0 i . In addition, in the first embodiment (a), the light source device 12 and the illumination optical system π are disposed, and the support surface of the stage 11 is disposed obliquely downward, and the support surface of the stage 亦可 may be disposed obliquely upward. (c) Observation device As the observation device 15 of the imaging means, a camera such as a C C D camera can be used. The CCD camera is an area camera that photographs two-dimensional images, and its field of view is the inspection field of view. The light receiving surface of the CCD camera is disposed to face the overlapping pattern 70 supported by the stage 11. The observation device 15 is provided with a light receiving optical system 14 having a counter lens. The light receiving optical system 14 collects the diffracted light from the superimposed pattern 70 formed on the stage 11 and forms it on the light receiving surface of the observation device 15. The observation device 15 is set to have a rectangular shape of 10 to 50 mm on one side by the inspection field of view of the light receiving optical system 14. The image of the diffracted light photographed by the observation device 15 is preferably displayed on a display screen (not shown), and may be output as image data to an analysis device (not shown). The observation device 15 and the light receiving optical system 14 are disposed above the support surface of the stage 11. Further, when the observation surface of the stage 11 and the light receiving optical system 14 are placed in the vertical direction, when the support surface of the stage 1 is placed in the oblique direction, the object lens of the light receiving optical system 14 is compared with The distance of the overlapping pattern 70 is uniform. At this time, it is preferable to obtain a uniform image in the same inspection field of view and to prevent defocusing. • 18- 200804796 (4) Pattern inspection method Continue, explain the inspection method by the above-mentioned pattern inspection apparatus 10: Case inspection method. The pattern 瑕疵 inspection method has the following steps: a step of overlapping the pattern 64 by repeating the test pattern 66 with a period, and a step of pattern 70; (b) a step of arranging the pattern 70 at a specified angle of incidence; (c) by observing from the overlap The diffracted light of the pattern 70 is detected by the step of repeating the pattern 56. The following is a description of each step. (a) Step of Forming the Overlay Pattern First, the pattern test substrate 60 and the mask 50 are held by the stage 1 1 of the pattern inspection apparatus 10. At this time, the formation surface of the pattern 66 is opposite to the formation surface of the repeating pattern 56, and the overlapping pattern 70 of the test pattern 66 and the repeating pattern 56 is formed. Here, the arrangement period D 1 of the unit pattern 53 is the arrangement of the test sheet 63. When the cycle pattern D2 is an integral multiple and the repeating pattern 56 and the test I are free of defects, the arrangement of the test units in the frame of each unit pattern 53 is the same as that in the other unit patterns 53. Fig. 5 is a diagram showing the arrangement direction of the unit patterns 53 in parallel, and the pattern of the overlapping patterns 70 in the arrangement direction of the unit patterns 63. Thus, in the frame of the grid-like unit pattern 5 3 , the square test unit pattern 63 is repeatedly arranged in the row D2. Further, the interval d between the grid frame 53a of each case 53 and the test piece 63 adjacent to the grid frame 53a is the same as that of the other unit patterns 53. Further, in the above, when there is a flaw in the repeating pattern 56, each of the drawings is as follows: (1) By using the overlapping irradiation light to check whether or not the above-mentioned test is held. By the bit pattern pattern 66 pattern 63 and the test minute enlargement column period unit map unit pattern bit pattern -19- 200804796 53 The arrangement of the test unit pattern 63 in the frame is different from the arrangement in the other unit patterns 5 3 . In other words, when the arrangement period D 1 of the unit pattern 53 changes (the coordinate position change system), and the width of the grid frame 53a constituting the unit pattern 53 fluctuates (the size change system), it is generated. The spacing d between the grid frame 53a in the unit pattern 53' of the crucible and the test unit pattern 63 adjacent to the grid frame 53a' is different from the aforementioned interval d of the innocent. 0 Fig. 5(b) is a partial enlarged view showing the overlapping pattern 70 when the grid frame 53a' is displaced upward (the coordinate position of the coordinate system). Thus, the interval d between the grid frame 53a' and the test unit pattern 63 adjacent thereto is narrower than the normal interval d. (b) Irradiation step Continuing, the light source device 12 described above is used to illuminate the light from the obliquely below the overlapping pattern 70. Thus, the overlapping pattern 70 formed of the light-shielding film acts as a diffraction grating for the incident light from the light source device 12 to generate the diffraction light. That is, the pattern interval (slit width) in the overlap pattern 70 is d, the wavelength of the incident light is λ, and when the incident angle is 0i, the diffraction angle satisfying the relationship of d(sin0n±sin0 i) = n λ In the direction, the diffracted light is observed twice. As described above, the overlap pattern 7 is flawless, and the interval d in each unit pattern 53 is uniform. Therefore, according to the above relational expression, as long as the wavelength entrance, the incident angle Θ i , and the diffraction angle 0:1 are the same, the observation results of the diffracted light from each unit pattern 53 are uniform. Further, the overlapping pattern 70 in which the ridge is generated is different from the aforementioned interval d in the unit pattern 53' of the -20 - 200804796 unit pattern 53'. Therefore, the observation result of the diffracted light from the unit pattern 53' which produces the crucible is different from the observation result of the diffracted light from the other normal unit pattern 53. That is, the diffracted light from the normal unit pattern 53 is regularly generated, and the diffracted light from the unit pattern having the ridge produces a diffracted light (light intensity, or a position at which a certain intensity is generated) which is inconsistent with the above-described regularity. (c) Inspection procedure with or without flaws Thereafter, the observation light is used to photograph the diffracted light from the overlapping pattern 70 described above, and the photographing result is output from the observation device 15 as image data. Fig. 5(c) shows an example of the photographing result of the diffracted light from the superimposed pattern 70. The black grid-like line observes the diffracted light caused by the normal unit pattern 53. Here, the vicinity of the center of Fig. 5(c) is passed, and diffracted light (white line) different in intensity from the other portions is observed. Observing the position of the white line, since the interval d' between the grid frame 53a' of the unit pattern 53' and the test unit pattern 63 adjacent to the grid frame 53a' is different from the interval d of other positions, so The portion produces diffracted light that is different from the normal portion, and a difference occurs in the observation of the diffracted light. That is, ' indicates that 瑕疵 is generated on the unit pattern 53 in the position where the white line is observed. In addition, it is easier to detect fine flaws than to observe the 0-time diffracted light (direct light). Therefore, it is preferable to adjust the diffraction angle 0 n (the direction in which the observation device 15 is disposed), the wavelength λ of the incident light, and the incident angle (the direction in which the light source device 12 is disposed) so that the observation device 15 can receive n times of the diffracted light with a high number of times (n # 0). Further, Fig. 1(a) shows a case where the observation device 15 receives -n times of diffracted light. -21- 200804796 In addition, it is advisable to use an image analysis device (not shown) to quantify the brightness information of the output image data, for example, by comparing it with a threshold (such as normal data). Each number is used to automatically detect 瑕疵. In addition, in addition to the above method, the image data which is quantized by the image analysis device may be shifted by the arrangement of the image data in the arrangement direction of the unit pattern 53. The image data is subtracted, and the image change of the 瑕疵 part is emphasized to detect the 瑕疵. An example of this is shown in Figure 5(d). In this way, it is easy to detect flaws by forming a pair of positive and negative peaks by the above processing. Thereafter, the wavelength λ of the incident light, the incident angle of light, and the diffraction angle 0n are maintained, and the superimposed pattern 70 is moved in the X_Y direction on the stage 11, and the entire area of the superimposed pattern 70 is inspected, and the first embodiment is completed. The pattern inspection method. According to the above embodiment, the second effects (1) to (3) are achieved. (1) According to the above embodiment, since the macroscopic inspection after the repeating pattern 56 can be performed by the diffracted light, the inspection can be performed in a short time, and the productivity can be improved. For example, in the substrate for a display device for a high definition TV, the substrate for the display device has 1920 (vertical) X1 080 (horizontal) = 2, 073, 600 unit patterns 53. Here, assuming that the unit pattern 53 is entirely microscopically examined using a laser length measuring machine or a microscope, if the measurement time per one unit pattern is about 10 seconds, it takes about 240 days to measure all the unit patterns 53. In particular, since the mask 50 for FPD manufacturing has a repeating pattern 56 of a single mask 50 on one of the substrates, the above-mentioned flaw detection of the unit pattern 53 in -22-200804796 is required. Long time. On the other hand, in the present embodiment, the 42V type of the high-definition TV substrate is used (the area is about 0. 5m2) As an example, a square inspection field of view of 25mm on one side (in which the overlap with the adjacent field of view is estimated) is used. When the above inspection is performed by diffracted light, the inspection time is 2. With a degree of 5 seconds, it is possible to complete the inspection with more than 40 minutes of inspection time, which is highly productive. (2) Further, according to the present embodiment, even if the arrangement period 〇1 of the unit pattern 53 in the repeating pattern 56 is larger than the period suitable for inspection using the diffracted light, the test pattern 66 is formed by overlapping the test pattern 66 on the repeating pattern 56. The overlapping pattern 70, observing the disorder of the diffracted light from the overlapping pattern 70, can still detect the fine flaws generated in the repeating pattern 56. As in the photomask 50, the arrangement period D1 of the unit pattern 53 in the repeating pattern 56 is large, for example, in the range of 100 to 1000 m. At this time, even if the diffracted light of the repeating pattern 56 is observed, it is difficult to detect the flaw generated on the repeating pattern. One of the reasons is that the n-th diffraction angle of the n-th order diffracted light from the repeating pattern 56 and the (n+1)-order diffracted light U are large when the arrangement period D1 of the unit pattern 53 in the repeating pattern 56 is large. The difference between the +1) secondary diffraction angles is very narrow, indicating that the disorder of the diffracted light generated on the repeating pattern 56 is masked. Further, the other reason is that the size after the repetition pattern 56 is too small as compared with the arrangement period D 1 of the unit pattern in the repeating pattern 56. For example, in the reticle 50, the arrangement period of the unit pattern 53 is D1. 100~1000 // m degree, but because the size of 瑕疵 is usually 100nm', its ratio is very small and is 0. 01~0. 1 %. Therefore, the detection of the diffracted light from the repeating pattern of the repeating pattern by the repeating pattern 56 indicates that there is a disorder of the ridge, whereas in the present embodiment, even when the array D1 of the unit pattern 531 is large, the overlapping pattern 70 is formed. To observe the clutter of the diffracted light from the case 70, it is still detectable that the repetitive pattern 56 is fine. In other words, the second and third embodiments of the second and third embodiments can be detected by replacing the line position 产生 generated on the repeating pattern 56 with the line width (gap) of the overlap pattern 70. The pattern inspection method differs from the first embodiment in the step of forming a superimposed pattern. In the second embodiment, the pattern of the superimposed pattern in the second embodiment is held by the resin film 80 which is transparent to the irradiation light by the test pattern substrate 60 for the pattern inspection, and the overlapping pattern is formed. In the embodiment, the overlapping pattern forming step is held between the pattern inspection test pattern substrate 60 and the light via the spacers 81, and the overlapping pattern 70 is formed. Further, when the distance between the forming surface of the test pattern 66 and the shape of the repeating pattern 56 is too large, the overlapping pattern 70 is not easily resolved, and when it is too small, it may be damaged by contact. Therefore, in order to obtain the light from the overlapping pattern 70, the formation surface of the test pattern 66 and the formation surface of the repeating pattern 56 are preferably 0. 2#m or more, 15/zm or less. This range can be used as a reference for the thickness of the above film and the height of the spacer. According to the second and third embodiments, it is possible to prevent damage to the pattern forming surface due to direct contact between the test pattern 66 and the pattern 56. Medium, difficult. The width or the width of the cycle. In the above-mentioned figure, the method of inspecting the pattern 瑕疵 70 - -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 The difference in morphology is the configuration of the pattern inspection device and the formation steps of the overlapping pattern. Hereinafter, the structure of the pattern flaw detecting device 40 in the fourth embodiment will be described first. Next, the overlapping pattern forming step of the pattern 瑕疵 inspection method in the fourth embodiment will be described. (1) Pattern inspection apparatus As shown in Fig. 4, the pattern inspection apparatus 40 of the fourth embodiment has a stage 21 as a holding means, a light source means 22 provided as a projection means under the stage 21, and projection optics. The system 23 and the observation device 25 provided as an imaging means above the stage 21 are provided. Further, the observation device 25 is provided with a light receiving optical system 24. The stage 21 as the holding means holds the surface on which the repeating pattern 56 is formed, and holds the mask 50 as the substrate to be inspected. Further, when the repeating pattern 56 is formed on the transparent substrate, the formation surface of the repeating pattern 56 may be held thereon. The stage 21 constitutes a frame shape and supports only the outer periphery of the mask 50. Further, the projection light from the light source device 22 disposed below may be irradiated onto the repeating pattern 56, and may be, for example, a plate material made of a material transparent to the irradiation light. The configuration of the stage 21 as the XY stage is the same as that of the first embodiment. The light source device 22 constituting the projection means irradiates light to the pattern inspection test pattern substrate 60 held by the holding member 23a. Light source device 22 -25- 200804796 Use ultra-high silver lamp, xenon lamp, metal halide with sufficient brightness (such as illuminance of 10,000 to 600,000 Lx and more than 10,000 Lx) and high parallelism (within parallelism of 2°) In the object light, the projection optical system 23 that constitutes the projection means in the first embodiment is provided between the light guide 22 and the support surface of the stage 21, and is provided from the light source device 22 for holding the pattern. The holding 23a of the test pattern substrate 60 for inspection; the aperture 23b for shielding the unnecessary light from the transmitted light passing through the test pattern 66; and the image for receiving the transmitted light passing through the aperture 23b, and the image of the test pattern 66 The imaging lens group on the repeating pattern 56 is formed by patterning the image of the test pattern 66 on the repeating pattern 56 in the same manner as in the first embodiment, and the overlapping pattern 70 is formed in a self-overlapping pattern; the diffracted light is generated. The light source device 22 and the projection optical system 23 are placed below the support of the stage 21. Further, when the light source device 22 and the projection optical system 23 are disposed in the vertical direction with respect to the support surface of the pair 21, the distance between the projection optical system 23 and the weight 56 is equal. An advantage at this time is that it is easy to homogenize the image of the test pattern 66 projected on the repeating 56 and to prevent defocusing. The observation device 25 and the light receiving optical system 24 as imaging means are similarly configured in the first embodiment. However, in the first embodiment, the household observation device 25 preferably receives diffracted light (n-th order diffracted light) in which the absolute enthalpy of the diffracted light is larger than the 0-order diffracted light. Therefore, when the light source device 22 and the projection light system 23 are disposed in the vertical direction with respect to the support surface of the stage 21, it is preferable that the receiving and receiving optical system 24 is disposed on the support surface of the stage 21 in a diagonal direction. (2) The pattern inspection step is 30 Pressure water is the same. The source assembly member is measured by 23c °, and the % 70 surface is loaded with the complex pattern, and the number of times is 25 squares 0 -26- 200804796. The use of the aforementioned pattern inspection device 40 is described. Pattern inspection method. The pattern inspection method according to the fourth embodiment has the following steps: U) a step of irradiating light at a specified incident angle on the test pattern 66 formed by periodically arranging the test unit pattern 63; (b) by passing the test The transmitted light of the pattern 66 is imaged on the repeating pattern 65 to form the overlapping pattern 70; (c) the step of observing the presence or absence of the flaw generated on the repeating pattern 56 by observing the diffracted light from the overlapping pattern 70. In the following, each step will be described in order. (a) Irradiation step First, the pattern test substrate 60 for pattern inspection is held on the holding member 2 3 a. Thereafter, the light source device 22 is used to irradiate the pattern test substrate 60 for pattern inspection. (b) Step of forming an overlapping pattern Thereafter, the image forming lens group 23c receives the transmitted light passing through the aperture 23b, and the image 66' of the test pattern 66 is imaged on the repeating pattern 56. By the above steps, the overlapping pattern 70 of the overlapping repeating pattern 56 and the image 66' of the test pattern 66 is formed. Further, similarly to the first embodiment, the diffracted light is generated from the superimposed pattern 70. (c) The inspection step of the presence or absence of the flaws is performed, and the diffracted light from the superimposed pattern 70 is imaged by the observation device 25, and the result is output as image data to check whether or not the flaw is generated on the repeating pattern 56. . According to the fourth embodiment, the formation surface of the test pattern 66 is opposed to the formation surface of the repeating pattern 56, and the pattern formation surface can be prevented from being damaged by the contact of the test pattern 66-27-200804796 with the repeating pattern 56. . [D] The fifth embodiment of the fifth embodiment differs from the fourth embodiment in that the pattern test substrate 60 is held on the stage 21 and is in the projection optical system 23. The cover 50 is held on the holding member 23a. That is, the position of the mask 50 and the pattern inspection test pattern substrate 60 is opposite to that of the pattern inspection method in the fourth embodiment. According to the fifth embodiment, the formation surface of the test pattern 66 can be opposed to the formation surface of the repeating pattern 56 without being in direct contact with each other, and damage of the pattern formation surface due to contact between the test pattern and the repeating pattern 56 can be prevented. According to the fifth embodiment, since the arrangement period of the unit pattern 53 is larger than the arrangement period D2 of the test unit pattern 63, the image of the repeating pattern 56 can be more easily formed on the test pattern 66. That is, the optical performance required for the projection optical system 23 is lowered, whereby the cost of the case inspection device can be reduced. [E] The pattern flaw inspection method according to the sixth embodiment of the sixth embodiment is different from the first to fourth embodiments in that the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 are not parallel to each other, and The superimposed pattern 70 is not orthogonal to each other. That is, in this case, the arrangement direction of the grid 53a of the unit pattern 53 and the test unit pattern 63 obliquely intersects. Fig. 7 shows a partial enlarged view of the overlapping pattern 70. At this time, the interval between the grid 53a and the test unit pattern 63 adjacent to the grid frame 53a is not constant, but varies depending on the position on the overlap pattern 70. For example, the case of the Ί 光 light case 66 D1 is easy to use as the frame d, the area A1 in Figure -28- 200804796, because the grille frame 53a is inclined to the lower right, so, with the self-grid frame 5 3 a The intersection with the test unit pattern 6 3 travels to the right, and the size of the interval d is enlarged. When the light is irradiated on the superimposed pattern 70 formed in the sixth embodiment, as described above, when the incident light has a wavelength of λ and the incident angle is 0 i, d(sin0 n±sin(9i) = nA is satisfied. In the direction of the diffraction angle 0 η of the relationship, the n-th order diffracted light is observed. That is, according to the superposition pattern 70 formed by the sixth embodiment, the size of the interval d varies depending on the position, according to the above relationship As long as the wavelength λ, the incident angle 0i, and the diffraction angle 0n are kept constant, the observed diffracted light differs depending on the inspection position on the overlap pattern 70. Here, when the unit pattern 53 constituting the repeating pattern 56 is normal, overlapping The change in the size of the interval d in the pattern is repeated at a certain period. At this time, the diffracted light generated in each portion of the repeating pattern 56 is also observed to be repeated at a certain period. However, the unit pattern 53 constituting the repeating pattern 56 is generated. In the case of 瑕疵, the change in the interval d in the region A2 of the crotch is different from the above-described normal portion. That is, the pattern different from the normal portion generates diffracted light. The grid frame is indicated by a solid line in FIG. 5 3 a, the original system should be configured The position indicated by the broken line is the result deviation to the position indicated by the solid line (the coordinate position change system). At this time, the original position of the area A2 indicated by the broken line moves to the right side to the area A2 indicated by the solid line. Therefore, the crotch is different from the normal repetitive pattern 56 (different intensity, or a position different from a certain intensity). -29- 200804796 As described above, the observation is generated from a certain rule. The position of the region A2 of the diffracted light can be detected, and the deviation from the position of the region A2 can be detected, and the presence or absence of the ridge generated on the repeating pattern 56 can be checked. Fig. 8 shows the overlapping pattern 70 from the sixth embodiment. An example of the result of the diffracted light. In Fig. 8, the left half of the black grid-like line is the diffracted light pattern b due to the grid frame 53 a constituting the normal unit pattern 5 3 at the 8th The right half of the figure periodically observes diffracted light (white lines) different from the intensity of other parts. That is, the position of the white line is observed, and φ means that the intensity of the diffracted light changes according to the interval d. A 1. of the region is moved to a more right side than the other white lines in the vicinity of the center portion of the right half of FIG. 8, the white line of the observation position. That is, the position indicates the defects generated on.  . . . .  When the angle 5 is too large, the angle 5 at which the grid frame 53a of the unit pattern 53 intersects with the arrangement direction of the test unit pattern 63 can surely detect the disorder of the diffracted light (the above movement) even in the narrow field of view. , φ The above movement amount is small, and detection is difficult. Conversely, if the angle is too small, even if the amount of movement described above is large, it is still difficult to detect it in a narrow field of view. Therefore, the grid frame 53a of the unit pattern 53 and the unit pattern for testing 63 -*, -.  The angle 5 at which the alignment directions intersect is preferably in the range of 1 degree to 2 degrees. In addition, the repeating pattern 56 and the test pattern 6 6 may be the same pattern or different patterns. Further, in the case of different patterns, the arrangement period D 1 of the unit pattern 53 and the arrangement period D2 of the test unit pattern 63 may be the same or different. At this time, even if the arrangement period D1 is smaller than the arrangement period d 2 . However, as in the case described above, the arrangement period 1 should be an integer multiple of the period -30 - 200804796 period D2. As described above, in the sixth embodiment, the arrangement direction of the unit patterns 53 and the arrangement direction of the test unit patterns 63 are obliquely intersected. Thereby, even if the arrangement period D2 of the test unit pattern 63 is larger than the arrangement period D1 of the unit pattern 533, the area A2 in which the size of the interval d varies within a certain range can be periodically formed on the overlap pattern 70. Thus, it is possible to check whether or not the pattern is generated after the repeating pattern 56. In particular, when the sixth embodiment is applied to the fifth embodiment, the arrangement period D2 of the test unit pattern 63 can be increased, so that the image of the test pattern 66 can be easily imaged. That is, since the optical performance required for the projection optical system 23 can be lowered, the cost of the pattern inspection apparatus can be reduced. Further, when the overlapping pattern 70 is formed, since it is not necessary to completely align the arrangement direction of the unit pattern 53 with the arrangement direction of the test unit pattern 63, the efficiency of the inspection work can be improved. Further, Fig. 6 is a partially enlarged view showing the overlapping pattern 70 formed by keeping the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 in parallel. At this time, since the arrangement period D1 of the unit pattern 53 is larger than the arrangement period D2 of the test unit pattern 63, the test unit pattern 63 overlaps with the unit pattern 53. Therefore, there is no obscured area in which the diffracted light can be observed. Further, even if enthalpy is generated on the repeating pattern 56, the diffracted light is not disturbed, and the detection is difficult. Therefore, the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 are not parallel to each other and are not orthogonal to each other. 31-200804796 The pattern 70 is advantageous. [E] Method of manufacturing the reticle Next, a method of manufacturing the reticle 50 having the step of detecting the presence or absence of the ridges of the repeating pattern 56 using the pattern 瑕疵 inspection method according to the first to sixth embodiments of the present invention will be described. The manufacturing steps of the mask 50 are sequentially performed: a masking sheet manufacturing step, a resist pattern forming step, a mask pattern forming step, and a rubbing inspection step. In the masking sheet manufacturing step, a film of a light-shielding film or the like is formed on the surface of the transparent substrate 57, and a resist layer is applied on the film to form a resist film. Thereby, a masking board of a laminated structure is manufactured. The resist pattern forming step is performed by a plotter on the anti-feeding film of the masking plate, such as irradiating the laser beam, using a raster drawing method or the like, and the specified pattern is exposed on the resist film and given A resist pattern is formed by development. A pattern for forming the repeating pattern 56 is provided on the resist pattern. The mask pattern forming step etches the film by using the resist pattern as a mask, and forms a repeating pattern 56 on the film. In this case, the period of the unit pattern 53 in the pattern 56 is appropriately set in accordance with the use of the apparatus for manufacturing the mask, and is set to 80 to 2000 /zm on a substrate for a display device such as a liquid crystal display panel. Further, a repeating pattern 56 of a single mask 50 may be formed on one of the substrates on the 2 to 4 sides. After patterning on the film, the anti-uranium layer is removed by etching. In the 瑕疵 inspection step, the pattern 瑕疵 inspection method according to the first to fourth embodiments of the present invention is applied as a part of the manufacturing process of the reticle 50, and the manufacture of the reticle 50 is completed. Here, the ruthenium inspection step of the present invention may be carried out using a resist pattern, or may be performed using a film pattern after removing the resist layer. When the resist pattern is used, it is preferable because the damage of the film pattern is suppressed. Thereafter, the mask 50 is used for exposure, and the mask pattern of the mask 50 is transferred onto the resist film on the substrate for the display device. Then, based on the transfer pattern, the pixel pattern is formed on the surface of the substrate for the display device, and the substrate for the display device is completed. Further, the above-mentioned pixel pattern is, for example, a repeating pattern of a thin film transistor, a counter substrate, a color filter or the like of a liquid crystal display panel. According to the above embodiment, the second effects (1) to (3) can be achieved. (1) According to the above embodiment, since the macroscopic inspection after the repeating pattern 56 can be performed by the diffracted light, the inspection can be performed in a short time, and the productivity of the mask 50 can be improved. (2) Further, in the reticle 50, even in the reticle 50, even if the arrangement period D1 of the unit pattern 53 in the pattern φ56 is repeated is larger than the period in which the diffracted light is easily detected, the pattern 56 is repeated. The overlap pattern 70 is superimposed on the test pattern 66 to observe the disorder of the diffracted light from the overlap pattern 70, and the fine flaw generated in the repeat pattern 56 can still be detected. (3) A substrate for a display device (such as a liquid crystal display panel) is formed by forming a pixel pattern by using the photomask 50 manufactured by the above-described method of manufacturing a photomask, and thus a substrate for a display device in which a pixel pattern is flawless can be formed. . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a first embodiment of the pattern inspection method according to the present invention, and Fig. 5 is a view showing a configuration for carrying out the pattern inspection apparatus according to the first embodiment. (b) a partial enlarged view showing a test pattern of the pattern test substrate for pattern inspection, and (c) a partial enlarged view showing a repeating pattern of the object to be inspected. Fig. 2 is a schematic side view showing a pattern inspection apparatus according to a second embodiment for carrying out the pattern inspection method of the present invention. Fig. 3 is a schematic side view showing a pattern inspection apparatus according to a third embodiment for carrying out the pattern inspection method of the present invention. Fig. 4 is a schematic side view showing a pattern inspection apparatus according to a fourth embodiment for carrying out the pattern inspection method of the present invention. Figure 5 is an explanatory diagram of an overlapping pattern of overlapping repeating patterns and test patterns, a diffraction result of the light from the overlapping pattern, and a detection result of the flaw, U) showing a partial enlarged view of the overlapping pattern of the test deadlock and the normal repeating pattern, (b) A partial enlarged view showing the overlapping pattern of the test pattern and the repeating pattern including 瑕疵, (c) showing the photographic result of the diffracted light obtained from the overlapping pattern, and (d) showing the 瑕疵 detecting result using the photographic result of the diffracted light. Fig. 6 is a partially enlarged view showing an arrangement pattern of the unit patterns of the repeating pattern and an overlapping pattern formed by the test pattern having the unit direction of the test unit pattern being parallel to each other. Fig. 7 is a partially enlarged view showing the arrangement direction of the unit pattern of the repeating pattern, and the arrangement direction of the test unit pattern which the test pattern has, which are not parallel to each other, and which are not orthogonal to each other. Fig. 8 shows the photographing result of the diffracted light obtained from the superimposed pattern shown in Fig. 7. 34 - 200804796 Fig. 9 shows the flaw generated on the repeating pattern of the object to be inspected, (a) and (b) showing the coordinate position After the change, (c) and (d) show the difference in size. Fig. 10 is a plan view showing a photomask as an object to be inspected. [Main component symbol description]

-35--35-

Claims (1)

•200804796 十、申請專例範圍： 1 · 一種圖案瑕疵檢查方法，係用於檢查具備以周期性排列 有單位圖案之重複圖案的被檢查體之產生於前述重複圖 案上的瑕疵，其特徵爲具備以下步驟： 藉由將以不同於前述重複圖案之周期而周期性排列測 試用單位圖案所形成之測試圖案與前述重複圖案重疊， 而形成重疊圖案之步驟； 0 以指定之入射角對前述重疊圖案照射光之步驟；及 藉由觀察來自前述重疊圖案之繞射光，以檢查有無產 生於前述重複圖案上之瑕疵之步驟。 2·如申請專利範圍第1項之圖案瑕疵檢查方法，其中形成 前述重疊圖案之步驟，係藉由使前述測試圖案之形成面 與前述重複圖案之形成面相對，以保持形成於透明支撐 體之一主面的前述測試圖案，與形成於其他透明支撐體 之一主面的前述重複圖案，而形成重疊圖案。 φ 3·如申請專利範圍第2項之圖案瑕疵檢查方法，其中使前 述測試圖案之形成面與前述重複圖案之形成面隔開指定 之間隔，而實質性平行地相對。 4.如申請專利範圍第3項之圖案瑕疵檢查方法，其中前述 指定之間隔係0.1 // m以上，30/z m以下。 5 · —種圖案瑕疵檢查方法，係用於檢查具備以周期性排列 有單位圖案之重複圖案的被檢查體之產生於前述重複圖 案上的瑕疵，其特徵爲具備以下步驟： 以指定之入射角，對以周期性排列測試用單位圖案所 -36- 200804796 形成之測試圖案照射光之步驟； 藉由使通過前述測試圖案之透過光成像於前述重複圖 案上，而形成重疊圖案之步驟；及 藉由觀察來自前述重疊圖案之繞射光，以檢查有無產 生於前述重複圖案上之瑕疵之步驟。 6. —種圖案瑕疵檢查方法，係用於檢查具備以周期性排列 有單位圖案之重複圖案的被檢查體之產生於前述重複圖 案上的瑕疵，其特徵爲具備以下步驟： 以指定之入射角，對前述重複圖案照射光之步驟； 藉由使通過前述重複圖案之透過光成像於以周期性排 列測試用單位圖案所形成之測試圖案上，而形成重疊圖 案之步驟；及 藉由觀察來自前述重疊圖案之繞射光，以檢查有無產 生於前述重複圖案上之瑕疵之步驟。 7. 如申請專利範圍第1至第6項中任一項之圖案瑕疵檢查 方法，其中前述單位圖案之排列周期係比前述測試用單 位圖案之排列周期大。 8. 如申請專利範圍第1至第6項中任一項之圖案瑕疵檢查 方法，其中前述單位圖案之排列周期係前述測試用單位 圖案之排列周期的整數倍。 9·如申請專利範圍第1至第6項中任一項之圖案瑕疵檢查 方法，其中前述單位圖案之排列周期係80 /z m以上，2000 μ m以下，前述測試用單位圖案之排列周期係〇. 1 μ m、以 上，50 // m以下。 -37- 200804796 10. 如申請專利範圍第1至第6項中任一項之圖案瑕疵檢查 方法，其中形成前述重疊圖案之步驟，係以使前述單位 圖案之排列方向與前述測試用單位圖案之排列方向彼此 平行的方式，而形成前述重疊圖案。 11. 如申請專利範圍第1至第6項中任一項之圖案瑕疵檢查 方法，其中形成前述重疊圖案之步驟，係以使前述單位 圖案之排列方向與前述測試用單位圖案之排列方向彼此 不平行且彼此不正交的方式，而形成前述重疊圖案。 12. 如申請專利範圍第11項之圖案瑕疵檢查方法，其中形 成前述重疊圖案之步驟，係使前述單位圖案之排列方向 與前述測試圖案之排列方向，以0.01度以上，2度以下 之角度彼此相交的方式，而形成前述重疊圖案。 13. —種圖案瑕疵檢查方法，係用於檢查具備以周期性排列 有單位圖案之重複圖案的被檢查體之產生於前述重複圖 案上的瑕疵，其特徵爲具備以下步驟： 藉由使前述單位圖案之排列方向與前述測試用單位圖 案之排列方向彼此不平行且彼此不正交的方式，藉由將 以周期性排列測試用單位圖案所形成之測試圖案與前述 重複圖案重疊，而形成重疊圖案之步驟； 以指定之入射角，對前述重疊圖案照射光之步驟；及 藉由觀察來自前述重疊圖案之繞射光，以檢查有無產 生於前述重複圖案上之瑕疵之步驟。 14. 如申請專利範圍第13項之圖案瑕疵檢查方法，其中使 前述測試圖案之形成面與前述重複圖案之形成面隔開指 -38- 200804796 定之間隔，而實質性平行地相對。 15. 如申請專利範圍第14項之圖案瑕疵檢查方法，其中前 述指定之間隔係0.1 M m以上，30 μ m以下。 16. —種圖案瑕疵檢查用測試圖案基板，其特徵爲具備：透 明基板，及在前述透明基板之主表面上以周期性排列有 測試用單位圖案所形成之測試圖案， 前述測試用單位圖案之排列周期爲0.1 /z m以上，50 // m以下， 前述測試用單位圖案之線寬的變動及線位置之變動均 爲30nm以下。 1 7. —種圖案瑕疵檢查裝置，係用於檢查具備圖案之被檢查 體之產生於前述圖案上的瑕疵，其特徵爲具備： 保持手段，其係用於將具備測試圖案之圖案瑕疵檢查 用測試圖案基板與前述被檢查體，隔開指定之間隔重疊 而予以保持，以形成重疊圖案； 照射手段，其係用於以指定之入射角對前述重疊圖案 照射光；及 攝像手段，其係用於觀察來自前述重疊圖案之繞射光 〇 18. —種圖案瑕疵檢查裝置，係用於檢查具備圖案之被檢查 體之產生於前述圖案上的瑕疵，其特徵爲具備： 保持手段，其係用於保持前述被檢查體； 投影手段，其係用於以指定之入射角對測試圖案照射 光，使通過前述測試圖案之透過光在前述圖案上成像， -39- 200804796 藉此而形成重疊圖案；及 攝像手段，其係用於藉由觀察來自前述重疊圖案之繞 射光，以檢查有無產生於前述圖案上之瑕疵。 19. 一種圖案瑕疵檢查裝置，係用於檢查具備圖案之被檢查 體之產生於前述圖案上的瑕疵，且特徵爲具備： 保持手段，其係用於保持測試圖案； 投影手段，其係用於以指定之入射角對前述圖案照射 光，使通過前述圖案之透過光在前述測試圖案上成像， 藉此而形成重疊圖案；及 攝像手段，藉由觀察來自前述重疊圖案之繞射光，以 檢查有無產生於前述重複圖案上之瑕疵。 20·—種光罩之製造方法，其特徵爲：具有使用申請專利範 圍第1至第6項中任一項之圖案瑕疵檢查方法，以檢查 有無產生於前述重複圖案上之瑕疵的步驟。 21. —種顯示裝置用基板<之製造方法，其特徵爲：使用由申 請專利範圍第20項之光罩的製造方法所製造之光罩，形 成像素圖案，以製造顯示裝置用基板。 22. —種光罩之製造方法，其特徵爲：具有使用申請專利範 圍桌13至第15項中任一項之圖案瑕疵檢查方法，以檢 查有無產生於前述重複圖案上之瑕疵的步驟。 23·—種顯示裝置用基板之製造方法，其特徵爲··使用由申 請專利範圍第22項之光罩之製造方法所製造之光罩，形 成像素圖案，以製造顯示裝置用基板。 -40 *• 200804796 X. Application Scope: 1 • A pattern inspection method for inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and is characterized by The following steps: forming a superimposed pattern by superimposing a test pattern formed by periodically arranging the test unit pattern with a period different from the repeating pattern described above; 0, the overlapping pattern at a specified incident angle a step of irradiating light; and a step of observing the presence or absence of a flaw generated on the repeating pattern by observing the diffracted light from the overlapping pattern. 2. The method according to claim 1, wherein the step of forming the overlapping pattern is performed by forming a surface of the test pattern opposite to a surface on which the repeating pattern is formed to maintain a transparent support. The aforementioned test pattern of one main surface forms an overlapping pattern with the aforementioned repeating pattern formed on one main surface of the other transparent support. Φ 3. The pattern inspection method according to the second aspect of the invention, wherein the formation surface of the test pattern is spaced apart from the formation surface of the repeat pattern by a predetermined interval, and substantially parallel to each other. 4. The method of pattern inspection according to item 3 of the patent application scope, wherein the specified interval is 0.1 // m or more and 30/z m or less. 5) A pattern inspection method for inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and is characterized by having the following steps: a step of illuminating the test pattern formed by periodically arranging the test unit pattern -36-200804796; forming a superimposed pattern by imaging the transmitted light passing through the test pattern onto the repeating pattern; and borrowing The step of observing the presence or absence of the flaw generated on the above-mentioned repeating pattern by observing the diffracted light from the aforementioned overlapping pattern. 6. A pattern inspection method for inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and is characterized by having the following steps: a step of irradiating light to the repeating pattern; forming a superimposed pattern by imaging transmitted light passing through the repeating pattern onto a test pattern formed by periodically arranging test unit patterns; and observing from the foregoing The light of the pattern is superimposed to check for the presence or absence of a flaw generated on the aforementioned repeating pattern. 7. The pattern inspection method according to any one of claims 1 to 6, wherein the arrangement period of the unit pattern is larger than the arrangement period of the test unit pattern. 8. The pattern inspection method according to any one of claims 1 to 6, wherein the arrangement period of the unit pattern is an integral multiple of an arrangement period of the unit pattern for the test. The pattern inspection method according to any one of claims 1 to 6, wherein the arrangement period of the unit pattern is 80/zm or more and 2000 μm or less, and the arrangement period of the unit pattern for the test is 〇. . 1 μ m or more, 50 // m or less. The method of pattern inspection according to any one of claims 1 to 6, wherein the step of forming the overlapping pattern is such that the arrangement direction of the unit pattern and the unit pattern for testing are The arrangement pattern is formed in such a manner that the alignment directions are parallel to each other. 11. The pattern inspection method according to any one of claims 1 to 6, wherein the step of forming the overlapping pattern is such that the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are not different from each other. The aforementioned overlapping pattern is formed in parallel and not orthogonal to each other. 12. The method according to claim 11, wherein the step of forming the overlapping pattern is such that the arrangement direction of the unit pattern and the arrangement direction of the test pattern are at an angle of 0.01 degrees or more and 2 degrees or less. The overlapping pattern is formed to form the aforementioned overlapping pattern. 13. A pattern inspection method for inspecting a flaw having a repeating pattern in which a unit pattern is periodically arranged, which is generated on the repeating pattern, and is characterized in that: the unit is provided by: The arrangement pattern of the pattern and the arrangement direction of the test unit pattern are not parallel to each other and are not orthogonal to each other, and the overlap pattern is formed by overlapping the test pattern formed by periodically arranging the test unit pattern with the repeat pattern. a step of irradiating the overlapping pattern with light at a specified incident angle; and observing the presence or absence of a flaw generated on the repeating pattern by observing the diffracted light from the overlapping pattern. 14. The pattern inspection method according to claim 13, wherein the formation surface of the test pattern is spaced apart from the formation surface of the repeat pattern by a distance of -38 to 200804796, and substantially parallel to each other. 15. For the pattern inspection method according to item 14 of the patent application, the interval specified above is 0.1 M m or more and 30 μm or less. 16. A test pattern substrate for pattern inspection, comprising: a transparent substrate; and a test pattern formed by periodically arranging a test unit pattern on a main surface of the transparent substrate, wherein the test unit pattern is The arrangement period is 0.1 /zm or more and 50 // m or less, and the variation of the line width of the unit pattern for the test and the variation of the line position are both 30 nm or less. 1 . A pattern inspection apparatus for inspecting a flaw generated on a pattern of a test object having a pattern, comprising: a holding means for inspecting a pattern having a test pattern The test pattern substrate and the object to be inspected are stacked at a predetermined interval to form a superimposed pattern, and the irradiation means is for irradiating the overlapping pattern with light at a predetermined incident angle; and the imaging means is used For observing the diffraction pupil from the overlapping pattern, a pattern inspection apparatus for inspecting a flaw generated on the pattern of the inspection object having a pattern, comprising: a holding means for Holding the object to be inspected; a projection means for irradiating the test pattern with light at a specified incident angle, and imaging the transmitted light passing through the test pattern on the pattern, thereby forming an overlapping pattern; and An imaging means for observing the presence or absence of the above-mentioned figure by observing the diffracted light from the aforementioned overlapping pattern Defects of. 19. A pattern inspection apparatus for inspecting a flaw generated on a pattern of a test object having a pattern, and characterized by: a holding means for holding a test pattern; and a projection means for Irradiating the pattern with the specified incident angle, imaging the transmitted light passing through the pattern on the test pattern, thereby forming an overlapping pattern; and imaging means by observing the diffracted light from the overlapping pattern to check for presence or absence Produced on the aforementioned repeating pattern. A method of producing a reticle, comprising the step of using a pattern inspection method according to any one of claims 1 to 6 to examine the presence or absence of a flaw generated on the repeating pattern. A method of manufacturing a substrate for a display device, which is characterized in that a photomask manufactured by the method for producing a photomask according to claim 20 of the patent application is used to form a pixel pattern to manufacture a substrate for a display device. A method of manufacturing a reticle, comprising the step of using a pattern inspection method according to any one of claims 13 to 15 to check whether or not the flaw generated on the repeating pattern is present. A method for producing a substrate for a display device, characterized in that a photomask manufactured by the method for producing a photomask according to claim 22 of the patent application is used, and a pixel pattern is formed to manufacture a substrate for a display device. -40 *
TW096121312A 2006-06-15 2007-06-13 Method of inspecting a pattern defect, substrate, having a test pattern for inspecting a pattern defect, apparatus for inspecting a pattern defect, method of producing a photomask, and method of producing a substrate for a display device TWI394945B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006166409A JP4771871B2 (en) 2006-06-15 2006-06-15 Pattern defect inspection method, pattern defect inspection test pattern substrate, pattern defect inspection apparatus, photomask manufacturing method, and display device substrate manufacturing method

Publications (2)

Publication Number Publication Date
TW200804796A true TW200804796A (en) 2008-01-16
TWI394945B TWI394945B (en) 2013-05-01

Family

ID=38933199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096121312A TWI394945B (en) 2006-06-15 2007-06-13 Method of inspecting a pattern defect, substrate, having a test pattern for inspecting a pattern defect, apparatus for inspecting a pattern defect, method of producing a photomask, and method of producing a substrate for a display device

Country Status (3)

Country Link
JP (1) JP4771871B2 (en)
KR (1) KR101232209B1 (en)
TW (1) TWI394945B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010019639A (en) * 2008-07-09 2010-01-28 Lasertec Corp Irregularity detection device and pattern inspection device
JP5601095B2 (en) * 2010-08-30 2014-10-08 凸版印刷株式会社 Inspection condition adjustment pattern and inspection condition adjustment method using the same
KR102000081B1 (en) * 2017-09-19 2019-07-17 세메스 주식회사 Die stage unit for testing die and die binding apparatus having the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112934U (en) * 1983-12-29 1984-07-30 富士通株式会社 Pattern matching inspection machine
JPH07198618A (en) * 1993-12-28 1995-08-01 Toshiba Corp Pattern defect inspection device
US5585211A (en) * 1995-02-06 1996-12-17 Firstein; Leon A. Fabrication and use of sub-micron dimensional standard
JP2001117213A (en) * 1999-08-10 2001-04-27 Nikon Corp Photomask, method for manufacturing the photomask, projection aligner handling the photomask and projection alignment method
JP2001305071A (en) * 2000-04-21 2001-10-31 Nikon Corp Defect inspecting device
JP4266082B2 (en) * 2001-04-26 2009-05-20 株式会社東芝 Inspection method for exposure mask pattern
JP4005881B2 (en) * 2002-08-30 2007-11-14 株式会社東芝 Inspection method for exposure apparatus
JP4529366B2 (en) * 2003-03-26 2010-08-25 株式会社ニコン Defect inspection apparatus, defect inspection method, and hole pattern inspection method
KR20050064458A (en) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 Pattern detector
JP4480001B2 (en) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 Nonuniformity defect inspection mask, nonuniformity defect inspection apparatus and method, and photomask manufacturing method
JP4480002B2 (en) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 Nonuniformity defect inspection method and apparatus, and photomask manufacturing method
JP4480009B2 (en) * 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 Defect inspection apparatus and method, and photomask manufacturing method
JP4993934B2 (en) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 Pattern defect inspection method, photomask manufacturing method, and display device substrate manufacturing method

Also Published As

Publication number Publication date
JP2007333590A (en) 2007-12-27
JP4771871B2 (en) 2011-09-14
KR20070119512A (en) 2007-12-20
TWI394945B (en) 2013-05-01
KR101232209B1 (en) 2013-02-12

Similar Documents

Publication Publication Date Title
TWI393876B (en) Pattern defect inspection method, photomask manufacturing method, and display device substrate manufacturing method
TWI336779B (en) Defect inspection apparatus, defect inspection method,method for fabricating photomask and method for transcribing pattern
JP4869129B2 (en) Pattern defect inspection method
JP4831607B2 (en) Pattern defect inspection method and photomask manufacturing method
CN101799433B (en) Pattern inspection method, pattern inspection device, photomask manufacturing method and pattern transfer method
JP4949928B2 (en) Pattern defect inspection method, pattern defect inspection apparatus, photomask product manufacturing method, and display device substrate manufacturing method
JP4583155B2 (en) Defect inspection method and system, and photomask manufacturing method
TWI394945B (en) Method of inspecting a pattern defect, substrate, having a test pattern for inspecting a pattern defect, apparatus for inspecting a pattern defect, method of producing a photomask, and method of producing a substrate for a display device
TW200526946A (en) Method of inspecting unevenness defect of pattern and device thereof
TW200914817A (en) Pattern defect inspecting method and pattern defect inspecting apparatus
JP2007333590A5 (en)
JP2009174957A (en) Foreign matter detection method and foreign matter detector
JP2012058029A (en) Periodic pattern inspection device
CN220773415U (en) Photomask inspection apparatus
JP2009156687A (en) Defect inspection device of photomask, defect inspection method of photomask, and manufacturing method of photomask
JP5685833B2 (en) Periodic pattern inspection method
JP2009156618A (en) Flaw inspection device of photomask, flaw inspection method of photomask and photomask manufacturing method
JPS62274719A (en) Reduction stepper
KR20020054606A (en) detecting mask of exposure apparatus
JP2006329945A (en) Optical inspection method and apparatus, and method and system for manufacturing product made of bonded optical film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees