KR101232209B1 - Pattern defect checking method, test pattern substrate for checking pattern defect, pattern defect checking device, method of manufacturing photomask and method of manufacturing substrate for display device - Google Patents

Abstract

An object of the present invention is to inspect the presence or absence of minute defects occurring in a repeating pattern in a short time. The present invention is a pattern defect inspection method for inspecting a defect occurring in a repeating pattern of a test subject having a repeating pattern in which unit patterns are periodically arranged, and a test pattern in which test unit patterns are periodically arranged and a repeating pattern And a step of irradiating light to the polymerization pattern at a predetermined angle of incidence by polymerization of the polymerization pattern, and a step of inspecting the presence or absence of a defect occurring in the repeating pattern by observing diffracted light from the polymerization pattern.

Polymerization pattern, defect, unit pattern, test pattern, incident angle

Description

Pattern Defect Inspection Method, Pattern Defect Inspection Test Pattern Substrate, Pattern Defect Inspection Device and Photomask Manufacturing Method and Display Device Substrate Manufacturing Method {PATTERN DEFECT CHECKING METHOD METHOD OF MANUFACTURING PHOTOMASK AND METHOD OF MANUFACTURING SUBSTRATE FOR DISPLAY DEVICE}

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view for explaining a first embodiment in a pattern defect inspection method according to the present invention, and Fig. 1A shows a schematic side view of a pattern defect inspection apparatus for implementing the first embodiment. 1B shows a partially enlarged view of the test pattern included in the test pattern substrate for pattern defect inspection, and FIG. 1C shows a partially enlarged view of the repeating pattern included in the inspected object.

 Fig. 2 shows a schematic side view of a pattern defect inspection apparatus for carrying out the second embodiment in the pattern defect inspection method according to the present invention.

Figure 3 shows a schematic side view of a pattern defect inspection apparatus for carrying out the third embodiment in the pattern defect inspection method according to the present invention.

Fig. 4 shows a schematic side view of a pattern defect inspection apparatus for carrying out the fourth embodiment in the pattern defect inspection method according to the present invention.

FIG. 5 is an explanatory view of a polymerization pattern including a repeating pattern and a test pattern, diffraction light from the polymerization pattern and a detection result of defects, and FIG. 5A shows a partial enlarged view of the polymerization pattern by the test pattern and the normal repeating pattern, and FIG. 5B shows a partial enlarged view of the polymerization pattern by the repeating pattern including the test pattern and the defect, FIG. 5C shows the imaging result of the diffracted light obtained from the polymerization pattern, and FIG. 5D shows the detection result of the defect using the imaging result of the diffracted light. Indicates.

FIG. 6 shows a partial enlarged view of a polymerization pattern formed so that the arrangement direction of the unit pattern of the repeating pattern and the arrangement direction of the test unit pattern of the test pattern are parallel to each other.

FIG. 7 shows a partially enlarged view of a polymerization pattern formed such that the arrangement direction of the unit pattern of the repeating pattern and the arrangement direction of the test unit pattern of the test pattern are not parallel to each other and are not perpendicular to each other at the same time.

FIG. 8 shows imaging results of diffracted light obtained from the polymerization pattern shown in FIG. 7.

FIG. 9 shows a defect occurring in a repeating pattern included in the inspected object, FIGS. 9A and 9B show a defect in a coordinate position change meter, and FIGS. 9C and 9D show a defect in a dimension change machine.

10 is a plan view showing a photomask as a test object.

According to the present invention, a photomask is manufactured by performing a pattern defect inspection method, a pattern defect inspection test pattern substrate, a pattern defect inspection apparatus, and a pattern defect inspection method for inspecting defects occurring in a repeating pattern in which unit patterns are periodically arranged. A method of manufacturing a photomask and a method of manufacturing a substrate for a display device.

On the surface of the device substrate or the photomask for manufacturing the device substrate, a repeating pattern in which unit patterns are periodically arranged may be formed. Originally, the unit pattern should be regularly arranged, but the regularly arranged pattern may include an error with other regularity that was unintentionally generated. This is also called spot defect and is caused by any cause in the manufacturing process or the like.

For example, when the said defect arises in the board | substrate for display devices, a problem, such as a display unevenness, arises. Moreover, when the said defect arises in the photomask used at the time of manufacturing a display device, the defect is transferred to the pattern formed in the display device board | substrate, and a problem becomes large. Therefore, the above-mentioned device substrate, photomask, and the like need to be inspected for the presence or absence of a defect occurring in the repeating pattern as the inspected object.

As for the above-described defects, the fine defects are normally arranged regularly so that the detection of the individual patterns is difficult to detect. However, when the entirety of the region is viewed, it may be different from other portions. Or even if it is possible to micro-inspect the shape of each unit pattern, it is difficult from a cost point and time viewpoint. However, when a large area containing a plurality of unit patterns is observed macroscopically, detection is often easy. Therefore, in the past, the presence or absence of a defect was examined by visual inspection by visual observation. However, in the light inspection by the naked eye, there is a problem such that a deviation occurs in the inspection result by the operator. Therefore, automation of the light inspection by the naked eye is required.

Japanese Patent Laid-Open No. 9-329555 (hereinafter referred to as "Patent Document 1") is a conventional technique for automating visual inspection of the naked eye, and a macro inspection apparatus for a semiconductor device substrate manufactured from a semiconductor wafer is provided. It is started. This apparatus is designed for the periodic structure of the semiconductor wafer surface due to the focusing offset, defocusing due to the presence of dust (particles) on the bottom surface of the wafer and fluctuations in the upper and lower positions of the wafer and the development / etching / peeling process of the wafer. Surface defects are examined by placing the entire wafer surface in a single field of view.

The apparatus disclosed in Patent Document 1 includes a light source for irradiating light having a desired wavelength to a repetitive pattern formed on a surface of a semiconductor wafer, a camera for receiving diffracted light from the surface of the substrate, and image data photographed by the camera; It has a detecting means for detecting a defect by comparing the reference data of defects. And the defect which arose in the said repeating pattern is detected by observing the diffracted light from a repeating pattern and detecting the disorder.

The apparatus of the said patent document 1 is applicable to the case where the period of a repeating pattern is below some extent, for example, 50 micrometers or less. For example, the defect which occurred in the repeating pattern of the semiconductor device whose period is about 2 micrometers or less, and the said defect which occurred in the repeating pattern of the photomask for semiconductor device manufacture whose period is about 15 micrometers or less are detectable.

However, the apparatus of patent document 1 has large arrangement | positioning period of the unit pattern in a repeating pattern like the photomask for manufacturing the board | substrate for display devices, such as a liquid crystal display panel, and the board | substrate for display devices, for example, For example, when it is about 100-1000 micrometers, even if it observes the diffracted light from a repeating pattern, detection of a defect will become difficult.

An object of the present invention is a pattern defect inspection method capable of inspecting the presence or absence of minute defects in a repeating pattern in a short time, a test pattern substrate for pattern defect inspection, a method for manufacturing a pattern defect inspection apparatus and a photomask, and a substrate for display device It is providing the manufacturing method of the.

1st invention which solves the said subject is a pattern defect inspection method for inspecting the defect which generate | occur | produced in the said repeating pattern of the to-be-tested object which has a repeating pattern in which a unit pattern was arranged periodically, and a test unit pattern is the said repeating pattern A test pattern periodically arranged at a different cycle from the above, a step of forming a polymerization pattern by polymerizing the repeating pattern, a step of irradiating light to the polymerization pattern at a predetermined incident angle, and diffraction from the polymerization pattern By observing light, the process of inspecting the presence or absence of the defect which arose in the said repeating pattern is provided.

Moreover, the 1st invention which solves the said subject is the process of forming the said polymerization pattern the said test pattern formed in the one main surface of the transparent support body, and the said repeating pattern formed in the one main surface of the other transparent support body, said It is preferable to form a polymerization pattern by keeping the formation surface of the test pattern and the formation surface of the repeating pattern facing each other, and at that time, the formation surface of the test pattern and the formation surface of the repeating pattern are substantially spaced apart at a predetermined interval. It is preferable to make them oppose in parallel, and it is preferable that the said predetermined space | interval is 0.1 micrometer or more and 30 micrometers or less.

2nd invention which solves the said subject is a pattern defect test | inspection method for inspecting the defect which generate | occur | produced in the said repeating pattern of the to-be-tested object with the repeating pattern in which the unit pattern was arrange | positioned periodically, and a test unit pattern is arrange | positioned periodically Irradiating light to a predetermined test angle at a predetermined incident angle; forming transmitted light passing through the test pattern on the repeating pattern; forming a polymerization pattern; and observing diffracted light from the polymerization pattern. And a step of inspecting the presence or absence of a defect occurring in the repeating pattern.

A third invention for solving the above problems is a pattern defect inspection method for inspecting a defect occurring in the repeating pattern of an inspected object having a repeating pattern in which unit patterns are periodically arranged, wherein a predetermined incident angle is applied to the repeating pattern. The step of irradiating light with the light, and the step of forming a polymerization pattern by forming the transmitted light passing through the repeating pattern on a test pattern in which test unit patterns are periodically arranged, and diffraction light from the polymerization pattern is observed. Thereby, the process of inspecting the presence or absence of the defect which arose in the said repeating pattern is provided.

Moreover, in the 1st thru | or 3rd invention which solves the said subject, it is preferable that the arrangement period of the said unit pattern is larger than the arrangement period of the said test unit pattern, In particular, the arrangement period of the said unit pattern is the said test It is preferable that it is an integer multiple of the array period of the dragon unit pattern.

Moreover, it is preferable that the arrangement period of the said unit pattern is 80 micrometers or more and 2000 micrometers or less, and the arrangement period of the said test unit pattern is 0.1 micrometer or more and 50 micrometers or less.

Further, in the first to third inventions for solving the above-mentioned problems, in the step of forming the polymerization pattern, the polymerization pattern is arranged such that the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are parallel to each other. Can be formed. In this case, since a polymerization pattern is formed in the state provided with the arrangement direction of a unit pattern and a test unit pattern, it is preferable at the point which is easy to observe the disturbance of diffracted light within a fixed inspection visual field.

Further, in the first to third inventions that solve the above problems, in the step of forming the polymerization pattern, the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are not parallel to each other and are not orthogonal to each other. You may form the said polymerization pattern so that it may be carried out. In this case, it is preferable at the point which the opposing alignment for making the arrangement direction of a unit pattern and a test unit pattern parallel is easy.

In this case, it is preferable to form the polymerization pattern such that the arrangement direction of the unit pattern and the arrangement direction of the test pattern cross each other at an angle of 0.01 degrees or more and 2 degrees or less. .

The 4th invention which solves the said subject is a pattern defect test | inspection method for inspecting the defect which generate | occur | produced in the said repeating pattern of the to-be-tested object with the repeating pattern in which the unit pattern was arrange | positioned periodically, and a test unit pattern is arrange | positioned periodically Forming a polymerization pattern by polymerizing the test pattern and the repeating pattern so that the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are not parallel to each other and are not orthogonal to each other; A step of irradiating light to a polymerization pattern at a predetermined angle of incidence, and a step of inspecting the presence or absence of a defect occurring in the repeating pattern by observing diffracted light from the polymerization pattern.

In 4th invention which solves the said subject, it is preferable to oppose the formation surface of the said test pattern and the formation surface of the said repeating pattern substantially parallel to a predetermined space | interval, and the said predetermined space | interval is 0.1 It is preferable that it is more than 30 micrometers.

In a fifth aspect of the present invention, there is provided a transparent substrate and a test pattern in which test unit patterns are periodically arranged on a main surface of the transparent substrate, wherein the test period of the test unit pattern is 0.1 μm or more. The deviation of the line width and the deviation of the line position of the test unit pattern of 50 µm or less are all 30 nm or less test pattern substrates for pattern defect inspection.

The sixth invention which solves the said subject is a pattern defect inspection apparatus for inspecting the defect which generate | occur | produced in the said pattern of the test subject with a pattern, The test pattern board for pattern defect inspection provided with a test pattern, and the said test subject Holding means for forming a polymerization pattern by holding a polymer at predetermined intervals to form a polymerization pattern, irradiation means for irradiating light to the polymerization pattern at a predetermined incidence angle, and imaging for observing diffracted light from the polymerization pattern. Means.

7th invention which solves the said subject is a pattern defect inspection apparatus for inspecting the defect which generate | occur | produced in the said pattern of the test subject with a pattern, The test pattern board for pattern defect inspection provided with a test pattern, and the said test subject Holding means for forming a polymerized pattern by holding the polymerized polymers at predetermined intervals, irradiation means for irradiating light to the polymerized pattern at a predetermined angle of incidence, and imaging means for observing diffracted light from the polymerized pattern. It is provided.

The eighth invention which solves the said subject is a pattern defect inspection apparatus for inspecting the defect which generate | occur | produced in the said pattern of the to-be-tested object with a pattern, The holding means for holding the said to-be-tested object, and the predetermined incident angle to a test pattern The light is irradiated with light to form transmitted light passing through the test pattern on the pattern, thereby inspecting projection means for forming a polymerized pattern and diffraction light from the polymerized pattern, thereby inspecting the presence or absence of a defect in the pattern. An imaging means for carrying out is provided.

A ninth invention for solving the above problems is a pattern defect inspection apparatus for inspecting a defect occurring in the pattern of an inspected object having a pattern, the holding means for holding a test pattern, and a predetermined incident angle to the pattern. Irradiating light and forming the transmitted light passing through the pattern on the test pattern, the inspection means for forming a polymerization pattern, and by examining the diffracted light from the polymerization pattern, the presence or absence of a defect in the repeating pattern is inspected An imaging means is provided.

In the tenth invention which solves the above-mentioned problems, the presence or absence of a defect which occurred in the said repeating pattern using the pattern defect inspection method of the 1st-9th invention, the test pattern substrate for pattern defect inspection, or a pattern defect inspection apparatus is used. It is a manufacturing method of the photomask which has a process to inspect.

11th invention which solves the said subject manufactures the display device board | substrate which forms a pixel pattern using the photomask manufactured by the photomask manufacturing method of 10th invention, and manufactures the board | substrate for display devices. It is a way.

According to the present invention, a pattern defect inspection method capable of inspecting the presence or absence of minute defects in a repeating pattern in a short time, a test pattern substrate for pattern defect inspection, a method for manufacturing a pattern defect inspection apparatus and a photomask, and a substrate for display device It can provide a manufacturing method.

EMBODIMENT OF THE INVENTION Hereinafter, the best form for implementing this invention is demonstrated, referring drawings.

1 is a diagram for explaining a first embodiment in the pattern defect inspection method according to the present invention, and a is a pattern defect inspection apparatus 10 for carrying out the first embodiment. Shows a schematic side view of b, b shows a partial enlarged view of the test pattern included in the test pattern substrate for pattern defect inspection, and c shows a partially enlarged view of the repeating pattern included in the inspected object.

5 is an explanatory diagram of a polymerization pattern obtained by polymerizing a repeating pattern and a test pattern, diffraction light from the polymerization pattern and a detection result of a defect, and a is a partial enlarged view of the polymerization pattern by the test pattern and the normal repeating pattern. B represents a partial enlarged view of the polymerization pattern by the repeating pattern including the test pattern and the defect, c represents the imaging result of the diffracted light obtained from the polymerization pattern, and d represents the detection result of the defect using the imaging result of the diffracted light. Indicates.

9 shows the defect which occurred in the repeating pattern which a test subject has, a and b show the defect (position shift defect) of a coordinate position change system, and c and d show the defect (line width defect) of a dimensional change system. ).

2 to 4 show schematic side views of the pattern defect inspection apparatuses 20, 30 and 40 for carrying out the second to fourth embodiments in the pattern defect inspection method according to the present invention, respectively.

[A] First Embodiment

Below, the structure of the to-be-tested object used as the test target in the pattern defect inspection method of (1) Example 1, and the structure of the test pattern board for pattern defect inspection used by the pattern defect inspection method are demonstrated. Subsequently, (3) the configuration of the pattern defect inspection apparatus will be described, and finally, (4) the pattern defect inspection method using the pattern defect inspection apparatus will be described.

(1) Configuration of the subject

First, the structure of a test subject is demonstrated using FIG. 1C, FIG. 9, and FIG.

In the pattern defect inspection method of the first embodiment, for example, as shown in Fig. 10, the photomask 50 is used as the inspection object. The photomask 50 is, for example, for exposure when manufacturing substrates for display devices such as liquid crystal display devices (especially Flat Panel Display (FPD)), plasma display devices, EL display devices, LED display devices, DMD display devices, and the like. It is used as a mask. The photomask 50 for these display devices can be made into the large size board | substrate whose side L1 or L2 exceeds 1 m, for example.

The photomask 50 as an inspection object is provided with a repeating pattern 56 made of a thin film (light shielding film) on the main surface of the transparent substrate 57 as a transparent support.

As a material of the transparent substrate 57, for example, a synthetic quartz glass substrate or the like is used. In addition, as a material of the thin film which comprises the repeating pattern 56, the material which has light-shielding properties, such as chromium and a semi-transmissive material, is used, for example. In addition, the thin film is not limited to a single layer but may be formed by lamination. In that case, the thin film may be accompanied by a semi-transparent film in addition to the light shielding film, or may be accompanied by a functional film such as an etching stopper. Moreover, the thing with a resist film on the said thin film may be sufficient.

The repeating pattern 56 has a shape in which lattice-shaped unit patterns 53 are periodically arranged, as shown in FIG. 1C, for example. The arrangement period D1 of the unit pattern 53, that is, the arrangement period in the arrangement direction of the unit pattern 53 is set to, for example, 80 to 2000 μm.

Subsequently, the defect which occurs in the repeating pattern 56 is demonstrated through the manufacturing method of the photomask 50. FIG.

In most cases, the photomask 50 is manufactured through the following steps (1) to (5). (1) First, a thin film (light shielding film) is formed on the transparent substrate 57, and a resist film is formed on the thin film. (2) Next, light of a laser or the like is irradiated to the resist film using a drawing machine, and drawing is performed using any drawing method such as, for example, a raster drawing method, and a predetermined pattern is exposed. (3) Next, development is performed to selectively remove the drawing portion or the non-drawing portion to form a resist pattern. (4) Thereafter, the resist pattern is masked to etch the thin film, and a repeating pattern 56 is formed on the thin film. (5) Finally, the remaining resist is removed and the manufacture of the photomask 50 shown in FIG. 10 is completed. In the case of a multilayer film, further steps depending on the material of the film can be provided.

Here, for example, in the process of (2) above, a defect occurs in the repeating pattern 56 due to sudden deterioration in scanning accuracy of the laser light, sudden fluctuation in the beam diameter, fluctuation in environmental factors, or the like. have. In addition, pattern defects with regularity may occur for various reasons.

An example of this defect is shown in FIG. In Fig. 9, the defective area is indicated by the numeral 54.

Fig. 9A shows a defect in which the arrangement period D1 'of the unit pattern 53 is partially widened by the positional shift occurring in the connection portion of the drawing by the beam. Similarly, FIG. 9B shows a defect in which the position of the unit pattern 53 'is relatively displaced relative to the other unit patterns 53 due to the position shift occurring in the connection portion of the drawing by the beam. These defects shown in FIG. 9A and FIG. 9B are called defects of a coordinate position change meter.

9C and 9D show defects in which the size of the unit pattern 53 ', that is, the width of the grid 53a' varies due to variations in the writer beam intensity. These defects shown in FIGS. 9C and 9D are referred to as defects in the dimensional variation system.

(2) Configuration of test pattern substrate for pattern defect inspection

Then, the structure of the test pattern board for pattern defect inspection used in a 1st Example is demonstrated using FIG. 1B.

The test pattern substrate 60 for pattern defect inspection in a 1st Example is the test which consists of a thin film (light shielding film) on the main surface of the transparent substrate 67 as a transparent support body similarly to the said photomask 50. The pattern 66 is provided. As the material of the transparent substrate 67, a synthetic quartz glass substrate or the like can be used as in the first embodiment. As for the material of the thin film constituting the test pattern 66, as in the first embodiment, a material having a light shielding property such as chromium is used.

For example, as shown in FIG. 1B, the test pattern 66 has a shape in which test unit patterns 63 such as squares are periodically arranged. In addition, the shape of the unit pattern 63 for a test is not limited to a square, A rectangle may be sufficient and it may be linear.

The arrangement period D2 of the test unit pattern 63, that is, the period in the arrangement direction of the unit pattern 53 is preferably smaller than the arrangement period D1 of the repeating pattern. The array period D2 of the test unit pattern 63 is preferably 1/3 or less of the array period D1 of the unit pattern 53, and more preferably 1/5 or less. This means that if the test unit pattern is close to the period of the unit pattern, it is necessary to increase the field of view for observing the disturbance of the diffracted light of the polymerization pattern described later. By hard to be doubled In particular, when the arrangement period D1 of the unit pattern 53 is 80 µm or more and 2000 µm or less, it is more preferable that the arrangement period D2 of the test unit pattern is 0.1 µm or more and 50 µm or less. The periodic range of this test unit pattern is a region where defects due to disturbance of diffracted light are easily observed.

In addition, it is preferable that the arrangement period D1 of the unit pattern 53 is an integer multiple of the arrangement period D2 of the unit pattern 63 for a test. As will be described later, when the polymerization pattern 70 is formed by polymerizing the repeating pattern 56 and the test pattern 66, the arrangement of the test unit patterns 63 within the normal range of each unit pattern 53 is performed. This is because the arrangement in the other normal unit pattern 53 becomes the same, which makes it easier to detect the disturbance of the diffracted light generated in the unit pattern of the defective site.

In addition, it is preferable that both the deviation of the line width (for example, the length of one side of a square) and the deviation of the linear position (a square position) of the test unit pattern 63 are all limited to below a predetermined value. Here, it is preferable that a predetermined value is 30 nm or less, More preferably, it is 20 nm or less.

(3) pattern defect inspection equipment

Next, the structure of the pattern defect inspection apparatus 10 for implementing 1st Example is demonstrated.

As shown in FIG. 1A, the pattern defect inspection apparatus 10 includes the stage 11 as the holding means, the light source device 12 as the irradiation means provided below the inclined direction of the stage 11, and the stage 11. It has the observation apparatus 15 as imaging means provided in the upper side of the. In addition, the light source device 12 includes an irradiation optical system 13, and the observation device 15 includes a light receiving optical system 14.

(a) Stage

The stage 11 as the holding means holds the pattern defect inspection test pattern substrate 60 and the photomask 50 so that the formation surface of the test pattern 66 and the formation surface of the repeating pattern 56 face each other. As a result, the polymerization pattern 70 of the test pattern 66 and the repeating pattern 56 is formed. In addition, although the photomask 50 is hold | maintained at the bottom side in FIG. 1A, you may hold the test pattern board | substrate 60 for pattern defect inspection at the bottom side.

The polymerization pattern 70 should be able to irradiate the irradiation light from the light source device 12 disposed obliquely below the stage 11. Therefore, the stage 11 is comprised as a frame shape which supports only the outer peripheral part of the photomask 50, for example. In addition, you may comprise with a board | plate material transparent with respect to irradiation light, for example.

The stage 11 is configured as, for example, an X-Y stage movable in the X direction and the Y direction. And the inspection visual field can be moved by moving the polymerization pattern 70 formed on the stage 11 with respect to the observation apparatus 15 relatively. In addition, when the stage 11 cannot be moved freely, the light source device 12 and the observation device 15 may move freely with respect to the stage 11.

(b) light source device

As the light source device 12 as the irradiation means, a light source having sufficient brightness (for example, illuminance of 10,000 to 600,000 Lx, preferably 300,000 Lx or more) and having high parallelism (parallelism of 2 degrees or less) is used. It is preferable to use. As a light source which can satisfy these conditions, an ultra-high pressure mercury lamp, a xenon lamp, and a metal halide lamp are mentioned.

The light source device 12 includes an irradiation optical system 13 including a lens. The irradiation optical system 13 is disposed between the support surface of the stage 11 and the light source device 12 to parallelize the light rays from the light source device 12, and at the same time, the inspection target of the polymerization pattern 70 (that is, (Inspection visual field of the observation device 15), light is irradiated at an incidence angle θ i from the lower side obliquely.

In addition, although the light source device 12 and the irradiation optical system 13 are arrange | positioned obliquely downward with respect to the support surface of the stage 11 in FIG. 1A, it is obliquely upward with respect to the support surface of the stage 11 in addition. You may arrange.

(c) observation device

As the observation apparatus 15 as an imaging means, cameras, such as a CCD camera, can be used, for example. A CCD camera is an area camera which photographs a two-dimensional image, and the visual field becomes an inspection visual field. The light receiving surface of the CCD camera is disposed to face the polymerization pattern 70 supported by the stage 11.

The observation device 15 includes a light receiving optical system 14 having an objective lens. The light receiving optical system 14 collects diffracted light from the polymerization pattern 70 formed on the stage 11, and forms an image on the light receiving surface of the observation device 15. The inspection field of view of the observation apparatus 15 through the light receiving optical system 14 is set so that one side may become 10-50 mm square shape by one inspection, for example.

It is preferable to display the image of the diffracted light picked up by the observation device 15 on a display screen (not shown), and it is preferable that the image can be output to an analysis device (not shown) as image data.

The observation device 15 and the light receiving optical system 14 are disposed above the support surface of the stage 11. In addition, when arrange | positioning the observation apparatus 15 and the light reception optical system 14 in the perpendicular direction with respect to the support surface of the stage 11, compared with the case where it arrange | positions in the inclined direction with respect to the support surface of the stage 11, The distance between the objective lens of the light receiving optical system 14 and the polymerization pattern 70 becomes uniform. In this case, since a uniform image is easy to obtain and defocus can be prevented in the same inspection visual field, it is preferable.

(4) Pattern defect inspection method

Next, the pattern defect inspection method performed by the pattern defect inspection apparatus 10 described above will be described. The pattern defect inspection method includes (a) a step of forming a polymerization pattern 70 by polymerizing a repeating pattern 56 having a cycle different from that of the test pattern 66, and (b) a predetermined incident angle to the polymerization pattern 70. And a step of inspecting the presence or absence of a defect which occurred in the repeating pattern 56 by observing the light by the light and (c) diffracted light from the polymerization pattern 70. Hereinafter, each process is demonstrated sequentially.

(a) Formation process of polymerization pattern

First, the test pattern substrate 60 and the photomask 50 for the pattern defect inspection described above are held on the stage 11 of the pattern defect inspection apparatus 10. At this time, the formation surface of the test pattern 66 and the formation surface of the repeating pattern 56 are held to face each other. Accordingly, the polymerization pattern 70 of the test pattern 66 and the repeating pattern 56 is formed.

Here, when the arrangement period D1 of the unit pattern 53 is an integer multiple of the arrangement period D2 of the unit pattern 63 for testing, and each of the repeating patterns 56 and the test pattern 66 has no defects, each unit The arrangement of the test unit patterns 63 in the frame of the pattern 53 is the same as the arrangement in the other unit patterns 53.

5A is a partially enlarged view of the polymerization pattern 70 when the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 are kept in parallel. According to this, the square test unit pattern 63 is repeatedly arranged in the arrangement period D2 in the frame of the lattice unit pattern 53. The interval d between the lattice frame 53a of each unit pattern 53 and the test unit pattern 63 adjacent to the lattice frame 53a is the same as the other unit patterns 53.

On the other hand, in the above, when the repeating pattern 56 has a defect, the arrangement of the test unit patterns 63 within the range of each unit pattern 53 is different from the arrangement in the other unit patterns 53. different. That is, fluctuations occur in the arrangement period D1 of the unit pattern 53 (defect in the coordinate position fluctuation system), or fluctuation occurs in the width of the lattice frame 53a constituting the unit pattern 53 (dimension fluctuation system). Defect), the interval d 'between the lattice frame 53a' in the defective unit pattern 53 'and the test unit pattern 63 adjacent to the lattice frame 53a' is Is different from the above interval d without a defect.

FIG. 5B shows a partially enlarged view of the polymerization pattern 70 in the case where the lattice frame 53a 'is displaced upward (defect in the coordinate position change meter). According to this, the space | interval d 'of the grid | lattice 53a' and the test unit pattern 63 adjacent to it is narrower than the space | interval d of a normal case.

(b) investigation process

Subsequently, light is irradiated obliquely below the polymerization pattern 70 using the light source device 12 described above. Then, the polymerization pattern 70 formed of the light shielding thin film acts as a diffraction grating with respect to the incident light from the light source device 12 and generates diffracted light.

That is, when the pattern interval (slit width) in the polymerization pattern 70 is d, the wavelength of incident light is λ and the incident angle is θ i, the diffraction angle θ n direction satisfies the relationship of d (sin θ n ± sin θ i) = n λ. , the nth order diffracted light is observed.

As described above, in the polymerization pattern 70 without a defect, the above-described interval d in each unit pattern 53 is uniform. Therefore, according to the above relation, as the wavelength?, The incident angle? I and the diffraction angle? N are the same, the observation result of the diffracted light from each unit pattern 53 becomes uniform.

On the other hand, in the polymerization pattern 70 of the defective portion, the above-described interval d 'in the defective unit pattern 53' is different from the above-described interval d without the defect.

Therefore, the observation result of the diffracted light from the defective unit pattern 53 'differs from the observation result of the diffracted light from the other normal unit pattern 53. As shown in FIG. In other words, while the diffracted light from the normal unit pattern 53 is generated with regularity, the diffracted light from the unit pattern having a defect is diffracted light (light intensity or position showing a certain intensity) that does not match the regularity. In).

(c) Inspection process for defects

Thereafter, the diffraction light from the above-described polymerization pattern 70 is imaged using the observation device 15, and the photographing result is output from the observation device 15 as image data.

5C shows an example of the imaging result of the diffracted light from the polymerization pattern 70. The black lattice line observes the diffracted light resulting from the normal unit pattern 53. Here, diffracted light (white line) having a different intensity from that of the other part is observed so as to cross the center of FIG. 5C. The position where the white line was observed is different in the distance d 'between the grid 53a' of the unit pattern 53 'and the test unit pattern 63 adjacent to the grid 53a'. Since it is different from the space | interval d in it, in the site | part, the diffraction light different from a normal part arises and it shows that the difference in the observation result of the diffraction light is shown. That is, it shows that the defect has arisen in the unit pattern 53 in the position where a white line was observed.

In addition, it is easy to detect the minute defect which observed the diffracted light with higher order than the 0th-order diffracted light (direct light). Therefore, the diffraction light θn (the installation direction of the observation device 15), the wavelength λ of the incident light, and the incident angle θi (light source device) so that the observation device 15 can receive the high order nth diffracted light (n ≠ 0). It is preferable to adjust the installation direction of (12). In addition, in FIG. 1A, the observation apparatus 15 shows the state which receives -n-order diffracted light.

In addition, a numerical value of the brightness information of the output image data is digitized using an image analysis device (not shown), and then, for example, each numerical value is compared with a threshold value (e.g., normal numerical data) to automatically detect defects. It is desirable to detect.

Further, in addition to the above method, the image data obtained by quantifying the brightness information by the image analysis device and the image data obtained by moving the image data in the arrangement direction of the unit pattern 53 in the arrangement period D1 minute are subtracted, The defect may be detected by emphasizing the image change. 5D shows an example thereof. According to this, a defect generation point forms a pair of plus and minus peaks by the said process, and it becomes easy to detect a defect.

Thereafter, while maintaining the wavelength? Of the incident light, the incident angle? I of the light, and the diffraction angle? N the same, the polymerization pattern 70 is moved on the stage 11 in the XY direction to inspect the entire region of the polymerization pattern 70. The pattern defect inspection method according to the embodiment of 1 is finished.

According to the said embodiment, the following effects (1)-(3) are exhibited.

(1) According to the above embodiment, since the macro inspection of the defect of the repeating pattern 56 can be performed using the diffracted light, the inspection can be performed in a short time, and the productivity can be improved.

For example, in a display device substrate for high-definition TV, the display device substrate has 1920 (vertical) x 1080 (horizontal) = 2,073,600 unit patterns 53. Here, when all the unit patterns 53 are micro-inspected using a laser measuring instrument or a microscope, for example, if the measurement time per unit pattern is about 10 seconds, in order to measure all the unit patterns 53, It will take about 240 days. In particular, since the photomask 50 for FPD manufacturing may attach two to four repetitive patterns 56 of a single photomask 50 to a single substrate, in this case, the unit mask 53 The defect inspection in this case requires a longer time.

In contrast, in the present embodiment, for example, a 42V type (area of about 0.5 m ² ) of the high-vision TV substrate is taken as an example. When the inspection by diffracted light was carried out using, the inspection time was about 2.5 seconds per one, the inspection can be completed in the inspection time of 40 minutes, the productivity is high.

(2) Further, according to this embodiment, even if the arrangement period D1 of the unit pattern 53 in the repeating pattern 56 is larger than the period suitable for the defect inspection using the diffracted light, the repeating pattern 56 is tested. By superposing | polymerizing the pattern 66 to form the polymerization pattern 70 and observing the disturbance of the diffracted light from the polymerization pattern 70, it becomes possible to detect the minute defect which arose in the repeating pattern 56.

For example, in the photomask 50, the arrangement period D1 of the unit pattern 53 in the repeating pattern 56 is large, for example, about 100 to 1000 µm. In this case, even if the diffracted light by the repeating pattern 56 is observed, it becomes difficult to detect the defect which arose in the repeating pattern.

One of the causes is that when the arrangement period D1 of the unit pattern 53 in the repeating pattern 56 becomes large, the nth diffraction angle and the (n + 1) th order diffraction of the nth diffracted light from the repeating pattern 56 are increased. The difference from the (n + 1) -diffraction angle of the light becomes considerably narrower, causing disturbance of the diffracted light indicating the presence of a defect in the repeating pattern 56.

In addition, as another cause, the magnitude | size of the defect which arises in the repeating pattern 56 is considered to be too small compared with the arrangement period D1 of the unit pattern in the repeating pattern 56. FIG. For example, in the photomask 50, the arrangement period D1 of the unit pattern 53 is about 100 to 1000 µm, but since the defect size is generally about 100 nm, the ratio is very small, 0.01 to 0.1%. . Therefore, in the diffracted light by a repeating pattern, it is difficult to detect the disturbance which shows presence of a defect with the diffracted light of the repeating pattern 56. FIG.

On the other hand, in the present embodiment, even when the arrangement period D1 of the unit pattern 53 is large, the above-described polymerization pattern 70 is formed, and the disturbance of the diffracted light from the polymerization pattern 70 is observed to thereby repeat the pattern 56. It becomes possible to detect the minute defect which occurred at the time. That is, detection is possible by replacing the defect of the line width and position which generate | occur | produced in the repeating pattern 56 more than the line width (interval) of the polymerization pattern 70. FIG.

[B] Second and Third Embodiments

The pattern defect inspection method in 2nd and 3rd Example differs from the said 1st Example in the formation process of a polymerization pattern.

In the formation process of the polymerization pattern in 2nd Example, as shown in FIG. 2, between the test pattern board 60 for pattern defect inspection and the photomask 50, the resin film 80 transparent with respect to irradiation light ), And the polymerization pattern 70 is formed.

In addition, in the polymerization pattern forming step in the third embodiment, as shown in FIG. 3, by holding the spacer 81 between the test pattern substrate 60 for pattern defect inspection and the photomask 50, The polymerization pattern 70 is formed.

In addition, when the distance between the formation surface of the test pattern 66 and the formation surface of the repeating pattern 56 is too large, it is difficult to resolve as the polymerization pattern 70, and when too small, the pattern may be damaged by contact. have. Therefore, in order to obtain diffracted light from the polymerization pattern 70, it is preferable that the distance between the formation surface of the test pattern 66 and the formation surface of the repeating pattern 56 is 0.2 micrometer or more and 15 micrometers or less. This range can be used as a reference for the thickness of the resin film or the height of the spacer.

According to the second and third embodiments, damage to the pattern formation surface due to direct contact between the test pattern 66 and the repeating pattern 56 can be prevented.

[C] Fourth Example

The pattern defect inspection method in the fourth embodiment is different from the first embodiment in the configuration of the pattern defect inspection apparatus and the formation process of the polymerization pattern. First, the configuration of the pattern defect inspection apparatus 40 in the fourth embodiment will be described. Thereafter, the polymerization pattern forming step of the pattern defect inspection method in the fourth embodiment will be described.

(1) pattern defect inspection equipment

As shown in FIG. 4, the pattern defect inspection apparatus 40 according to the fourth embodiment includes a stage 21 as a holding means, a light source device 22 as a projection means and a projection provided below the stage 21. The optical system 23 and the observation apparatus 25 as image pickup means provided above the stage 21 are provided. In addition, the observation device 25 includes a light receiving optical system 24.

The stage 21 as the holding means holds the photomask 50 as the substrate to be inspected so that the formation surface of the repeating pattern 56 is on the bottom surface. In addition, when the repeating pattern 56 is formed on a transparent substrate, you may hold | maintain so that the formation surface of the repeating pattern 56 may be an upper surface.

The stage 21 is configured as, for example, a frame shape so as to support only the outer peripheral portion of the photomask 50. Further, for example, a plate may be made of a material transparent to the irradiation light so that the projection light from the light source device 22 disposed below can be irradiated onto the repeating pattern 56.

The stage 21 is configured as an X-Y stage in the same manner as in the first embodiment.

The light source device 22 constituting the projection means irradiates light onto the test pattern substrate 60 for pattern defect inspection held by the holding member 23a. As the light source device 22, an ultra-high pressure mercury lamp and a xenon lamp having sufficient brightness (for example, illuminance of 10,000 to 600,000 Lx, preferably 300,000 Lx or more) and high parallelism (parallelism is within 2 °). The use of the metal halide lamp is the same as that of the first embodiment.

The projection optical system 23 constituting the projection means is provided between the light source device 22 and the support surface of the stage 21, and is arranged in order from the light source device 22 to the test pattern substrate 60 for pattern defect inspection. ), A holding member (23a) for holding (), an aperture (23b) for shielding unnecessary parts from the transmitted light passing through the test pattern (66), and the transmitted light passing through the aperture (23b) And an imaging lens group 23c for forming an image of the test pattern 66 on the repeating pattern 56.

By forming an image of the test pattern 66 on the repeating pattern 56, the polymerization pattern 70 is formed as in the first embodiment, and diffracted light is generated from the polymerization pattern 70.

The light source device 22 and the projection optical system 23 are disposed below the support surface of the stage 21. In addition, when the light source device 22 and the projection optical system 23 are disposed in the vertical direction with respect to the support surface of the stage 21, the distance between the projection optical system 23 and the repeating pattern 56 becomes equal. In this case, since the image of the test pattern 66 projected on the repeating pattern 56 can be made uniform, and defocus can be prevented, it is preferable.

The observation device 25 and the light receiving optical system 24 as the photographing means are configured as in the first embodiment. However, as described in the first embodiment, it is preferable that the observation device 25 receives diffracted light (n-th order diffracted light) having an order of greater absolute value than the 0th order diffracted light among the diffracted light. Therefore, when the light source device 22 and the projection optical system 23 are disposed in the vertical direction with respect to the support surface of the stage 21, the observation device 25 and the light receiving optical system 24 are connected to the stage 21. It is preferable to arrange | position obliquely upward with respect to a support surface.

(2) Pattern defect inspection process

Subsequently, the pattern defect inspection method using the pattern defect inspection apparatus 40 described above will be described. The pattern defect inspection method according to the fourth embodiment includes the steps of: (a) irradiating light to a test pattern 66 in which test unit patterns 63 are arranged periodically at a predetermined incident angle, and (b) Imaging the transmitted light passing through the test pattern 66 on the repeating pattern 56 to form the polymerization pattern 70, and (c) observing the diffracted light from the polymerization pattern 70, thereby repeating the repeating pattern 56. ) And a step of inspecting for the presence or absence of a defect that occurred. Hereinafter, each process is demonstrated sequentially.

(a) investigation process

First, the test pattern substrate 60 for pattern defect inspection is hold | maintained in the holding member 23a. Thereafter, light is irradiated to the test pattern substrate 60 for pattern defect inspection using the light source device 22.

(b) forming a polymerization pattern

After that, the transmitted light passing through the aperture 23b is received using the imaging lens group 23c to form an image 66 'of the test pattern 66 on the repeating pattern 56.

By the above, the polymerization pattern 70 formed by superposing | polymerizing the phase 66 'of the repeating pattern 56 and the test pattern 66 is formed. In addition, like the first embodiment, diffracted light is generated from the polymerization pattern 70.

(c) Inspection process for defects

Thereafter, similarly to the first embodiment, the diffraction light from the polymerization pattern 70 is imaged using the observation device 25, the result is output as image data, and the defect occurred in the repeating pattern 56. Check for the presence of

According to the fourth embodiment, the forming surface of the test pattern 66 and the forming surface of the repeating pattern 56 may be opposed to each other without directly contacting each other, and the test pattern 66 and the repeating pattern 56 may contact each other. Damage to the pattern forming surface can be prevented.

[D] Fifth Embodiment

The pattern defect inspection method in the fifth embodiment differs from the fourth embodiment in that the test pattern substrate 60 for pattern defect inspection is held on the stage 21, and the projection optical system 23 The photomask 50 is held by the holding member 23a. That is, in the pattern defect inspection method in the fourth embodiment, the holding positions of the photomask 50 and the test pattern substrate 60 for pattern defect inspection are reversed.

According to the fifth embodiment, the forming surface of the test pattern 66 and the forming surface of the repeating pattern 56 can be opposed to each other without being directly in contact with each other, and the test pattern 66 and the repeating pattern 56 are in contact with each other. Damage to the pattern forming surface can be prevented.

Further, according to the fifth embodiment, the forming surface of the test pattern 66 and the forming surface of the repeating pattern 56 may face each other without being directly in contact with each other, and the test pattern 66 and the repeating pattern 56 may contact each other. This can prevent damage to the pattern formation surface.

According to the fifth embodiment, since the arrangement period D1 of the unit pattern 53 is larger than the arrangement period D2 of the test unit pattern 63, the image of the repeating pattern 56 on the test pattern 66 is relatively easy. You can open phase. That is, the optical performance required for the projection optical system 23 can be lowered, thereby reducing the cost of the pattern defect inspection apparatus.

[E] Sixth Example

The pattern defect inspection method in the sixth embodiment is different from the first to fourth embodiments in that the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 are different from each other. It exists in the point which forms the superposition | polymerization pattern 70 so that it is not parallel to each other and orthogonal to each other. That is, in such a case, the lattice frame 53a of the unit pattern 53 and the arrangement direction of the test unit pattern 63 cross at an angle.

7 shows a partially enlarged view of the polymerization pattern 70. In this case, the distance d between the lattice frame 53a and the test unit pattern 63 adjacent to the lattice frame 53a is not constant, but changes depending on the position on the polymerization pattern 70. For example, in the area A1 in FIG. 7, since the grid 53a is lowered to the right, the size of the gap d is moved to the right from the intersection of the grid 53a and the test unit pattern 63. Is enlarged.

When light is irradiated to the polymerization pattern 70 formed by the sixth embodiment, as described above, when the wavelength of the incident light is λ and the incident angle is θ i, the relationship of d (sin θ n ± sin θ i) = n λ is obtained. In the direction of satisfying the diffraction angle θ n, the n-th order diffracted light is observed.

That is, as in the polymerization pattern 70 formed by the sixth embodiment, when the size of the interval d varies depending on the position, the wavelength lambda, the incident angle θ i, and the diffraction angle θ n are constant based on the above relational expression. As long as it is maintained, the diffracted light observed differs depending on the inspection position on the polymerization pattern 70.

Here, when the unit pattern 53 constituting the repeating pattern 56 is normal, the change in size of the interval d in the polymerization pattern is repeated at a constant cycle. In this case, diffraction light generated in each part of the repeating pattern 56 is observed with repetition having a certain period.

However, when a defect occurs in the unit pattern 53 constituting the repeating pattern 56, the change of the interval d in the region A2 of the defective portion is different from the above normal portion. In other words, a pattern different from the top portion causes diffracted light. For example, the grid frame 53a 'indicated by the solid line in FIG. 7 should be originally disposed at the position indicated by the dotted line, but moves to the position indicated by the solid line (defect in the coordinate position fluctuation system). In this case, the original position of the area A2 indicated by the dotted line moves to the area A2 'indicated by the solid line on the right side. Therefore, in this defect portion, diffracted light (different intensity or different position of the portion which becomes a certain intensity) different from the normal repeating pattern 56 is observed.

Based on the above, by observing the position of the region A2 'showing the diffracted light deviating from the regularity, the deviation from the position of the region A2 can be detected, and the presence or absence of a defect in the repeating pattern 56 can be examined. Can be.

8 shows an example of a photographing result of diffracted light from the polymerization pattern 70 according to the sixth embodiment. In FIG. 8, the black lattice-shaped line of the left half is a diffraction light pattern resulting from the grating frame 53a which comprises each normal unit pattern 53. As shown in FIG. In the right half of Fig. 8, diffracted light (white line) having a different intensity from that of other portions is periodically observed. That is, the observation position of a white line shows that it is the area | region A1 in which the intensity | strength of diffracted light is changed by the change of the said space | interval d. And in the vicinity of the center in the right half of FIG. 8, the observation position of said white line shifts to the right rather than another white line. That is, it shows that a defect generate | occur | produces in the shifted position.

When the angle δ at which the lattice frame 53a of the unit pattern 53 intersects the array direction of the test unit pattern 63 is too large, the disturbance of the diffracted light (the shift described above) is reliably ensured even within a narrow field of view. While it can detect, the said shift amount becomes small and it becomes difficult to detect. On the contrary, when the angle is too small, the shift amount becomes large, but it becomes difficult to reliably detect within a narrow field of view.

Therefore, the angle δ where the lattice frame 53a of the unit pattern 53 and the array direction of the test unit pattern 63 intersect is preferably in the range of 0.01 to 2 degrees.

The repeating pattern 56 and the test pattern 66 may be the same pattern or different patterns. In the case of another pattern, the arrangement period D1 of the unit pattern 53 and the arrangement period D2 of the test unit pattern 63 may also be the same or different. Here, the array period D1 may be smaller than the array period D2. However, it is the same as that of the case where it is preferable that array period D1 is an integer multiple of array period D2.

As described above, in the sixth embodiment, the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 are crossed at an angle. Accordingly, even when the arrangement period D2 of the test unit pattern 63 is larger than the arrangement period D1 of the unit pattern 53, the region A2 in which the size of the interval d varies within a certain range is periodically formed on the polymerization pattern 70. Can be made with Therefore, the presence or absence of the defect which occurred in the repeating pattern 56 can be examined.

In particular, when the sixth embodiment is applied to the fifth embodiment described above, the arrangement period D2 of the test unit pattern 63 can be increased, so that the image of the test pattern 66 can be relatively easily formed. It is possible to form an image. That is, since the optical performance required for the projection optical system 23 can be lowered, the cost of the pattern defect inspection apparatus can be lowered.

Moreover, when forming the polymerization pattern 70, it is not necessary to keep the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 completely parallel, so that the efficiency of inspection work can be improved. .

6 is a partially enlarged view of the polymerization pattern 70 formed by making the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 parallel.

In this case, since the array period D1 of the unit pattern 53 is larger than the array period D2 of the test unit pattern 63, the test unit pattern 63 and the unit pattern 53 overlap each other. Therefore, there is no region where the disturbance of the diffracted light can be observed, and even if a defect occurs in the repeating pattern 56, the diffracted light does not become disturbed, so that the defect is difficult to detect. Therefore, it is advantageous to form the polymerization pattern 70 so that the arrangement direction of the unit pattern 53 and the arrangement direction of the test unit pattern 63 are not parallel to each other and not perpendicular to each other.

[E] manufacturing method of photomask

Subsequently, the manufacturing method of the photomask 50 which has a process of inspecting the presence or absence of the defect which arose in the repeating pattern 56 using the pattern defect inspection method shown as 1st-6th embodiment of this invention. Explain.

The manufacturing process of this photomask 50 performs a mask blank manufacturing process, a resist pattern formation process, a mask pattern formation process, and a defect inspection process one by one.

In the mask blank manufacturing step, a thin film such as a light shielding film is formed on the surface of the transparent substrate 57, and a resist is applied on the thin film to form a resist film. Thus, a mask blank of a laminated structure is manufactured.

In the resist pattern forming step, a resist beam of a mask blank is irradiated with a laser beam, for example, by using an arbitrary method such as a raster drawing method, and a predetermined pattern is exposed to the resist film to develop. To form a resist pattern. In this resist pattern, a pattern for forming a repeating pattern 56 is provided.

In the mask pattern forming step, the thin film is etched using the resist pattern as a mask to form a repeating pattern 56 on the thin film. At this time, the period of the unit pattern 53 in the repeating pattern 56 is appropriately set according to the use of the device to be manufactured using the photomask, for example, a display device substrate such as a liquid crystal display panel. Is set to 80 to 2000 µm. In addition, the repeating pattern 56 of the single photomask 50 may be formed on one board of two to four surfaces. After forming a pattern on the thin film, the resist is removed by etching.

In the defect inspection step, the pattern defect inspection method shown as the first to fourth embodiments of the present invention is performed as part of the manufacturing process of the photomask 50 to complete the manufacture of the photomask 50. Here, the defect inspection process of this invention may be performed using a resist pattern, and may be performed using a thin film pattern after removing a resist. When using a resist pattern, it is preferable at the point which can suppress the damage of a thin film pattern.

After that, exposure is performed using this photomask 50, and the mask pattern of the photomask 50 is transferred to the resist film on the display device substrate. Thereafter, a pixel pattern based on this transfer pattern is formed on the surface of the substrate for display device to complete the manufacture of the substrate for display device. The pixel pattern is, for example, a repeating pattern of a thin film transistor, an opposing substrate, a color filter of a liquid crystal display panel.

According to the said embodiment, the following effects (1)-(3) are exhibited.

(1) According to the above embodiment, since the inspection of the defect of the repeating pattern 56 can be performed by using the diffracted light, the inspection can be performed in a short time, thereby increasing the productivity of the photomask 50. Can be.

(2) Further, according to the embodiment, in the photomask 50, the arrangement period D1 of the unit pattern 53 in the repeating pattern 56 is large for a period in which defect inspection by diffracted light is easy to perform. Even in this case, fine defects occurred in the repeating pattern 56 by polymerizing the test pattern 66 to the repeating pattern 56 to form the polymerization pattern 70 and observing the disturbance of the diffracted light from the polymerization pattern 70. Can be detected.

(3) The pixel pattern is formed by forming a pixel pattern using the photomask 50 manufactured by the above-described method for manufacturing the photomask, and manufacturing a substrate for a display device (for example, a liquid crystal display panel). It can be set as the board | substrate for display devices not present.

Claims (23)

A pattern defect inspection method for inspecting defects occurring in the repeating pattern of a subject under test having a repeating pattern in which unit patterns are periodically arranged; A test pattern in which a unit pattern for testing is periodically arranged at a cycle different from the repeating pattern, and a step of forming a polymerization pattern by polymerizing the repeating pattern; Irradiating light to the polymerization pattern at a predetermined incident angle; And a step of inspecting for the presence or absence of a defect which occurred in the said repeating pattern by observing the diffracted light from the said polymerization pattern, The pattern defect inspection method characterized by the above-mentioned. The method of claim 1, The step of forming the polymerization pattern includes the test pattern formed on one main surface of the transparent support and the repeating pattern formed on one main surface of the other transparent support, wherein the forming surface of the test pattern and the forming surface of the repeating pattern are A pattern defect inspection method, characterized in that to form a polymerization pattern by keeping it facing. 3. The method of claim 2, The pattern defect inspection method, characterized in that the forming surface of the test pattern and the forming surface of the repeating pattern are faced in parallel at a predetermined interval. The method of claim 3, The predetermined defect is a pattern defect inspection method, characterized in that more than 0.1㎛ 30㎛. A pattern defect inspection method for inspecting defects occurring in the repeating pattern of a subject under test having a repeating pattern in which unit patterns are periodically arranged; Irradiating light at a predetermined angle of incidence to a test pattern in which the unit patterns for testing are arranged periodically; Forming a polymerization pattern by forming transmitted light passing through the test pattern on the repeating pattern; And a step of inspecting for the presence or absence of a defect which occurred in the said repeating pattern by observing the diffracted light from the said polymerization pattern, The pattern defect inspection method characterized by the above-mentioned. A pattern defect inspection method for inspecting defects occurring in the repeating pattern of a subject under test having a repeating pattern in which unit patterns are periodically arranged; Irradiating light to the repeating pattern at a predetermined incident angle; Forming a polymerization pattern by forming the transmitted light passing through the repeating pattern on a test pattern in which test unit patterns are periodically arranged; And a step of inspecting for the presence or absence of a defect which occurred in the said repeating pattern by observing the diffracted light from the said polymerization pattern, The pattern defect inspection method characterized by the above-mentioned. The method according to any one of claims 1 to 6, And the arrangement period of the unit pattern is larger than the arrangement period of the test unit pattern. The method according to any one of claims 1 to 6, And the arrangement period of the unit pattern is an integer multiple of the arrangement period of the test unit pattern. The method according to any one of claims 1 to 6, And the arrangement period of the unit pattern is 80 µm or more and 2000 µm or less, and the arrangement period of the test unit pattern is 0.1 µm or more and 50 µm or less. The method according to any one of claims 1 to 6, In the step of forming the polymerization pattern, the pattern defect inspection method, characterized in that the polymerization pattern is formed so that the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are parallel to each other. The method according to any one of claims 1 to 6, In the step of forming the polymerization pattern, the polymerization defect inspection method is characterized in that the polymerization pattern is formed so that the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are not parallel to each other and are not orthogonal to each other. . 12. The method of claim 11, In the step of forming the polymerization pattern, the polymerization defect is formed so that the polymerization pattern is formed such that the arrangement direction of the unit pattern and the arrangement direction of the test pattern cross each other at an angle of 0.01 degree or more and 2 degrees or less. Way. A pattern defect inspection method for inspecting defects occurring in the repeating pattern of a subject under test having a repeating pattern in which unit patterns are periodically arranged; By polymerizing a test pattern in which test unit patterns are periodically arranged and the repeating pattern so that the arrangement direction of the unit pattern and the arrangement direction of the test unit pattern are not parallel to each other and not orthogonal to each other. Forming a polymerization pattern; Irradiating light to the polymerization pattern at a predetermined incident angle; And a step of inspecting for the presence or absence of a defect which occurred in the said repeating pattern by observing the diffracted light from the said polymerization pattern, The pattern defect inspection method characterized by the above-mentioned. 14. The method of claim 13, The pattern defect inspection method, characterized in that the forming surface of the test pattern and the forming surface of the repeating pattern are faced in parallel at a predetermined interval. 15. The method of claim 14, The predetermined gap is a pattern defect inspection method, characterized in that more than 0.1㎛ 30㎛. A transparent substrate and a test pattern on which a test unit pattern is periodically arranged on a main surface of the transparent substrate, The arrangement period of the test unit pattern is 0.1㎛ 50㎛, The deviation of the line width and the deviation of the line position of the unit pattern for testing are all 30 nm or less test pattern substrate for pattern defect inspection. It is a pattern defect inspection apparatus for inspecting the defect which arose in the said pattern of the test subject with a pattern, A test pattern substrate for pattern defect inspection provided with a test pattern, holding means for holding the test object to be polymerized at a predetermined interval to form a polymerization pattern; Irradiation means for irradiating light to the polymerization pattern at a predetermined angle of incidence; And imaging means for observing diffracted light from said polymerization pattern. It is a pattern defect inspection apparatus for inspecting the defect which arose in the said pattern of the test subject with a pattern, Holding means for holding the subject under test; Projection means for forming a polymerization pattern by irradiating light to a test pattern at a predetermined angle of incidence and forming transmitted light passing through the test pattern on the pattern; And imaging means for inspecting for the presence or absence of a defect occurring in the pattern by observing diffracted light from the polymerization pattern. It is a pattern defect inspection apparatus for inspecting the defect which arose in the said pattern of the test subject with a pattern, Holding means for holding a test pattern, Projection means for forming a polymerized pattern by irradiating light to the pattern at a predetermined angle of incidence and forming transmitted light passing through the pattern on the test pattern; And imaging means for inspecting for the presence or absence of a defect occurring in the pattern by observing diffracted light from the polymerization pattern. The manufacturing method of the photomask characterized by having the process of inspecting the presence or absence of the defect which arose in the said repeating pattern using the pattern defect inspection method in any one of Claims 1-6. A pixel pattern is formed using the photomask manufactured by the manufacturing method of the photomask of Claim 20, and the board | substrate for display devices is manufactured, The manufacturing method of the board | substrate for display devices characterized by the above-mentioned. The manufacturing method of the photomask which has a process of inspecting the presence or absence of the defect which arose in the said repeating pattern using the pattern defect inspection method in any one of Claims 13-15. A pixel pattern is formed using the photomask manufactured by the manufacturing method of the photomask of Claim 22, and the board | substrate for display devices is manufactured, The manufacturing method of the board | substrate for display devices characterized by the above-mentioned.

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