KR101701021B1 - 표시 장치 및 그의 제조 방법 - Google Patents

표시 장치 및 그의 제조 방법 Download PDF

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Publication number
KR101701021B1
KR101701021B1 KR1020150009126A KR20150009126A KR101701021B1 KR 101701021 B1 KR101701021 B1 KR 101701021B1 KR 1020150009126 A KR1020150009126 A KR 1020150009126A KR 20150009126 A KR20150009126 A KR 20150009126A KR 101701021 B1 KR101701021 B1 KR 101701021B1
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South Korea
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insulating film
display device
terminal
terminals
thin film
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Korean (ko)
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KR20150093101A (ko
Inventor
가즈히로 오다까
도시히로 사또
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가부시키가이샤 재팬 디스프레이
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L27/124—
    • H01L27/1248—
    • H01L27/1262—
    • H01L27/3244—
    • H01L27/3246—
    • H01L27/3276—
    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H01L2227/323—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020150009126A 2014-02-06 2015-01-20 표시 장치 및 그의 제조 방법 Active KR101701021B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-021746 2014-02-06
JP2014021746A JP6324098B2 (ja) 2014-02-06 2014-02-06 表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20150093101A KR20150093101A (ko) 2015-08-17
KR101701021B1 true KR101701021B1 (ko) 2017-01-31

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KR1020150009126A Active KR101701021B1 (ko) 2014-02-06 2015-01-20 표시 장치 및 그의 제조 방법

Country Status (5)

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US (2) US9263479B2 (enExample)
JP (1) JP6324098B2 (enExample)
KR (1) KR101701021B1 (enExample)
CN (1) CN104835420B (enExample)
TW (1) TWI597837B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6454250B2 (ja) * 2015-09-18 2019-01-16 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
JP6486291B2 (ja) * 2016-02-24 2019-03-20 株式会社ジャパンディスプレイ 表示装置の製造方法、及び、表示装置
JP2017152231A (ja) * 2016-02-25 2017-08-31 株式会社ジャパンディスプレイ 表示装置、表示装置の製造方法
JP6756508B2 (ja) 2016-04-04 2020-09-16 株式会社ジャパンディスプレイ 表示装置
JP2018005004A (ja) 2016-07-04 2018-01-11 株式会社ジャパンディスプレイ 表示装置
JP2018005003A (ja) 2016-07-04 2018-01-11 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
KR101951939B1 (ko) * 2016-08-26 2019-02-25 엘지디스플레이 주식회사 표시장치
JP6935244B2 (ja) * 2017-06-27 2021-09-15 株式会社ジャパンディスプレイ 表示装置、および表示装置の製造方法
JP6983006B2 (ja) * 2017-08-23 2021-12-17 株式会社ジャパンディスプレイ 表示装置
JP7109982B2 (ja) 2018-04-27 2022-08-01 株式会社ジャパンディスプレイ 表示装置
CN113871431A (zh) * 2021-09-17 2021-12-31 深圳市华星光电半导体显示技术有限公司 显示面板和移动终端

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JP3484307B2 (ja) * 1996-12-06 2004-01-06 株式会社 日立ディスプレイズ 液晶表示装置
JPH11327465A (ja) * 1998-05-13 1999-11-26 Toshiba Corp 表示装置用アレイ基板
JP3139549B2 (ja) * 1999-01-29 2001-03-05 日本電気株式会社 アクティブマトリクス型液晶表示装置
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JP2006047827A (ja) * 2004-08-06 2006-02-16 Mitsubishi Electric Corp 液晶表示装置およびその製造方法
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JP4333574B2 (ja) * 2004-12-17 2009-09-16 三菱電機株式会社 液晶表示装置ならびにその製造方法
JP2006202722A (ja) * 2004-12-21 2006-08-03 Toshiba Matsushita Display Technology Co Ltd 有機ｅｌ表示装置の製造方法
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JP4820372B2 (ja) * 2005-12-01 2011-11-24 シャープ株式会社 回路部材、電極接続構造及びそれを備えた表示装置
KR101219047B1 (ko) * 2005-12-13 2013-01-07 삼성디스플레이 주식회사 표시장치와 이의 제조방법
KR101157262B1 (ko) * 2005-12-14 2012-06-15 엘지디스플레이 주식회사 유기 전계 발광 표시 장치 및 이의 제조 방법
KR20070071012A (ko) * 2005-12-29 2007-07-04 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 이의 제조 방법
KR100688791B1 (ko) * 2006-01-27 2007-03-02 삼성에스디아이 주식회사 유기 전계 발광 표시장치 및 그 제조 방법.
JP2008065135A (ja) 2006-09-08 2008-03-21 Hitachi Displays Ltd 表示装置
JP2008110528A (ja) * 2006-10-30 2008-05-15 Sony Corp 搬送ローラ及び画像形成装置
KR101279317B1 (ko) * 2008-06-04 2013-06-26 엘지디스플레이 주식회사 유기발광다이오드 표시장치
US20110279766A1 (en) * 2009-02-10 2011-11-17 Sharp Kabushiki Kaisha Connecting terminal and display apparatus including same
JP5492516B2 (ja) * 2009-10-01 2014-05-14 株式会社ジャパンディスプレイ 液晶表示装置
KR20110111747A (ko) * 2010-04-05 2011-10-12 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP2014145857A (ja) * 2013-01-28 2014-08-14 Sony Corp 表示装置およびその製造方法、並びに電子機器

Also Published As

Publication number Publication date
JP6324098B2 (ja) 2018-05-16
JP2015148728A (ja) 2015-08-20
CN104835420A (zh) 2015-08-12
KR20150093101A (ko) 2015-08-17
CN104835420B (zh) 2017-11-21
TWI597837B (zh) 2017-09-01
US9263479B2 (en) 2016-02-16
TW201532265A (zh) 2015-08-16
US20150221683A1 (en) 2015-08-06
US9508752B2 (en) 2016-11-29
US20160181282A1 (en) 2016-06-23

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