KR101648684B1 - 박막 트랜지스터 - Google Patents

박막 트랜지스터 Download PDF

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KR101648684B1
KR101648684B1 KR1020157004247A KR20157004247A KR101648684B1 KR 101648684 B1 KR101648684 B1 KR 101648684B1 KR 1020157004247 A KR1020157004247 A KR 1020157004247A KR 20157004247 A KR20157004247 A KR 20157004247A KR 101648684 B1 KR101648684 B1 KR 101648684B1
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oxide semiconductor
semiconductor layer
wet etching
film
layer
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KR20150029035A (ko
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히로시 고토
아야 미키
도모야 기시
겐타 히로세
신야 모리타
도시히로 구기미야
안병두
김건희
김연홍
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삼성디스플레이 주식회사
가부시키가이샤 고베 세이코쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H01L29/7869—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H01L29/78606—
    • H01L29/78618—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H01L2924/13069—

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020157004247A 2012-06-06 2013-06-06 박막 트랜지스터 Active KR101648684B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012129399 2012-06-06
JPJP-P-2012-129399 2012-06-06
PCT/JP2013/065743 WO2013183726A1 (ja) 2012-06-06 2013-06-06 薄膜トランジスタ

Related Parent Applications (1)

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KR1020147036930A Division KR101648661B1 (ko) 2012-06-06 2013-06-06 박막 트랜지스터

Publications (2)

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KR20150029035A KR20150029035A (ko) 2015-03-17
KR101648684B1 true KR101648684B1 (ko) 2016-08-17

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KR1020147036930A Expired - Fee Related KR101648661B1 (ko) 2012-06-06 2013-06-06 박막 트랜지스터

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US (2) US9343586B2 (https=)
JP (2) JP6002088B2 (https=)
KR (2) KR101648684B1 (https=)
CN (2) CN104681625B (https=)
TW (2) TWI516832B (https=)
WO (1) WO2013183726A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10930790B2 (en) 2017-05-31 2021-02-23 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the gate driver
US11201248B2 (en) 2017-06-27 2021-12-14 Lg Display Co., Ltd. Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013168748A1 (ja) * 2012-05-09 2013-11-14 株式会社神戸製鋼所 薄膜トランジスタおよび表示装置
JP6068232B2 (ja) * 2012-05-30 2017-01-25 株式会社神戸製鋼所 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタ、表示装置およびスパッタリングターゲット
WO2014104296A1 (ja) * 2012-12-28 2014-07-03 株式会社神戸製鋼所 薄膜トランジスタおよびその製造方法
CN105917450A (zh) * 2014-01-15 2016-08-31 株式会社神户制钢所 薄膜晶体管
KR101559246B1 (ko) 2014-05-02 2015-10-14 경희대학교 산학협력단 갈륨을 포함하는 p형 산화물 반도체를 이용한 태양전지 및 이의 제조 방법
WO2015142038A1 (ko) * 2014-03-17 2015-09-24 경희대학교 산학협력단 갈륨을 포함하는 p형 비정질 산화물 반도체, 이의 제조방법, 이를 포함하는 태양전지 및 이의 제조 방법
JP6120794B2 (ja) * 2014-03-26 2017-04-26 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
KR101705406B1 (ko) * 2014-09-11 2017-02-10 경희대학교 산학협력단 갈륨을 포함하는 p형 산화물 반도체를 이용한 유기 발광 다이오드 및 이의 제조 방법
TWI578543B (zh) 2014-10-20 2017-04-11 群創光電股份有限公司 薄膜電晶體基板及包含其之顯示裝置
US20170329185A1 (en) * 2014-11-28 2017-11-16 Sharp Kabushiki Kaisha Liquid crystal display device
TWI577032B (zh) * 2015-04-24 2017-04-01 群創光電股份有限公司 顯示裝置
JP6875088B2 (ja) * 2016-02-26 2021-05-19 株式会社神戸製鋼所 酸化物半導体層を含む薄膜トランジスタ
DE112017004841B4 (de) * 2016-09-27 2025-04-17 Sharp Kabushiki Kaisha Halbleitervorrichtung und Verfahren zu deren Herstellung
KR102044601B1 (ko) * 2017-01-26 2019-11-13 경희대학교 산학협력단 갈륨을 포함하는 p형 산화물 반도체를 이용한 유기 발광 다이오드 및 이의 제조 방법
KR102434908B1 (ko) 2017-10-20 2022-08-19 엘지디스플레이 주식회사 산화물 반도체층을 포함하는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치
KR102418493B1 (ko) 2017-10-24 2022-07-06 엘지디스플레이 주식회사 이차원 반도체를 포함하는 박막 트랜지스터 및 이를 포함하는 표시장치
CN107808885B (zh) * 2017-10-25 2020-04-28 深圳市华星光电半导体显示技术有限公司 背沟道蚀刻型氧化物半导体tft基板及其制作方法
JP6706638B2 (ja) * 2018-03-07 2020-06-10 シャープ株式会社 半導体装置およびその製造方法
JP2019163493A (ja) * 2018-03-19 2019-09-26 住友金属鉱山株式会社 透明酸化物積層膜、透明酸化物積層膜の製造方法、及び透明樹脂基板
JP7063712B2 (ja) * 2018-05-09 2022-05-09 株式会社神戸製鋼所 酸化物半導体層を含む薄膜トランジスタ
JP2020167188A (ja) 2019-03-28 2020-10-08 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
CN110010626B (zh) 2019-04-11 2022-04-29 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN113841223B (zh) * 2019-05-23 2024-02-06 三菱电机株式会社 半导体基板的制造方法和半导体装置的制造方法
JP7384777B2 (ja) * 2019-12-16 2023-11-21 株式会社神戸製鋼所 酸化物半導体薄膜、薄膜トランジスタ及びスパッタリングターゲット
CN111697005A (zh) * 2020-05-25 2020-09-22 福建华佳彩有限公司 一种阵列基板及其制作方法
CN112242406A (zh) * 2020-10-09 2021-01-19 Tcl华星光电技术有限公司 阵列基板及其制作方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073701A (ja) 2005-09-06 2007-03-22 Canon Inc アモルファス酸化物層を用いた薄膜トランジスタ
JP2008243928A (ja) 2007-03-26 2008-10-09 Idemitsu Kosan Co Ltd 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
JP2010040552A (ja) 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101514766B1 (ko) 2001-07-17 2015-05-12 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟 및 투명 도전막
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
KR101241524B1 (ko) 2005-09-01 2013-03-11 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 도전막 및 투명 전극
JP4933756B2 (ja) 2005-09-01 2012-05-16 出光興産株式会社 スパッタリングターゲット
JP5006598B2 (ja) * 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
KR101080527B1 (ko) 2005-09-20 2011-11-04 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 도전막 및 투명 전극
US8304359B2 (en) 2005-09-27 2012-11-06 Idemitsu Kosan Co., Ltd. Sputtering target, transparent conductive film, and transparent electrode for touch panel
WO2007139009A1 (ja) * 2006-05-25 2007-12-06 Fuji Electric Holdings Co., Ltd. 酸化物半導体、薄膜トランジスタ、及びそれらの製造方法
JP5358891B2 (ja) 2006-08-11 2013-12-04 日立金属株式会社 酸化亜鉛焼結体の製造方法
JP2008072011A (ja) * 2006-09-15 2008-03-27 Toppan Printing Co Ltd 薄膜トランジスタの製造方法
WO2008117739A1 (ja) * 2007-03-23 2008-10-02 Idemitsu Kosan Co., Ltd. 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JPWO2009034953A1 (ja) * 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
JP5213458B2 (ja) 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
JP5250322B2 (ja) 2008-07-10 2013-07-31 富士フイルム株式会社 金属酸化物膜とその製造方法、及び半導体装置
US10644163B2 (en) * 2008-08-27 2020-05-05 Idemitsu Kosan Co., Ltd. Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms
KR101489652B1 (ko) * 2008-09-02 2015-02-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP5345359B2 (ja) * 2008-09-18 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP2010118407A (ja) * 2008-11-11 2010-05-27 Idemitsu Kosan Co Ltd エッチング耐性を有する薄膜トランジスタ、及びその製造方法
WO2010114529A1 (en) * 2009-03-31 2010-10-07 Hewlett-Packard Development Company, L.P. Thin-film transistor (tft) with a bi-layer channel
KR101408445B1 (ko) 2009-07-27 2014-06-17 가부시키가이샤 고베 세이코쇼 배선 구조 및 그 제조 방법 및 배선 구조를 구비한 표시 장치
CN102473732B (zh) 2009-07-27 2015-09-16 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
CN102473734B (zh) * 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011187506A (ja) 2010-03-04 2011-09-22 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2012124446A (ja) 2010-04-07 2012-06-28 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP2012033854A (ja) 2010-04-20 2012-02-16 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
KR101920709B1 (ko) * 2010-07-30 2018-11-22 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
JP5718072B2 (ja) 2010-07-30 2015-05-13 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP2012094853A (ja) 2010-09-30 2012-05-17 Kobe Steel Ltd 配線構造
JP5780902B2 (ja) * 2010-10-12 2015-09-16 出光興産株式会社 半導体薄膜、薄膜トランジスタ及びその製造方法
JP2012119664A (ja) 2010-11-12 2012-06-21 Kobe Steel Ltd 配線構造
JP5651095B2 (ja) 2010-11-16 2015-01-07 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP2013070010A (ja) * 2010-11-26 2013-04-18 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP2012164963A (ja) 2010-11-26 2012-08-30 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP5723262B2 (ja) 2010-12-02 2015-05-27 株式会社神戸製鋼所 薄膜トランジスタおよびスパッタリングターゲット
TWI507554B (zh) 2010-12-28 2015-11-11 神戶製鋼所股份有限公司 An oxide and a sputtering target for a semiconductor layer of a thin film transistor, and a thin film transistor
JP5750063B2 (ja) 2011-02-10 2015-07-15 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP5750065B2 (ja) 2011-02-10 2015-07-15 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP2012180248A (ja) 2011-03-02 2012-09-20 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
JP2012180247A (ja) 2011-03-02 2012-09-20 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
JP2013153118A (ja) 2011-03-09 2013-08-08 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物、上記酸化物を備えた薄膜トランジスタの半導体層および薄膜トランジスタ
JP2012235104A (ja) 2011-04-22 2012-11-29 Kobe Steel Ltd 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073701A (ja) 2005-09-06 2007-03-22 Canon Inc アモルファス酸化物層を用いた薄膜トランジスタ
JP2008243928A (ja) 2007-03-26 2008-10-09 Idemitsu Kosan Co Ltd 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
JP2010040552A (ja) 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10930790B2 (en) 2017-05-31 2021-02-23 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the gate driver
US11417774B2 (en) 2017-05-31 2022-08-16 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the gate driver
US11791418B2 (en) 2017-05-31 2023-10-17 Lg Display Co., Ltd. Method for manufacturing thin film transistor, and electronic device
US12249655B2 (en) 2017-05-31 2025-03-11 Lg Display Co., Ltd. Method for manufacturing thin film transistor, and electronic device
US11201248B2 (en) 2017-06-27 2021-12-14 Lg Display Co., Ltd. Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same
US12176437B2 (en) 2017-06-27 2024-12-24 Lg Display Co., Ltd. Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same

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US9343586B2 (en) 2016-05-17
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