KR101494034B1 - 반도체 제작에 적합한 표면 개질용 조성물 및 방법 - Google Patents

반도체 제작에 적합한 표면 개질용 조성물 및 방법 Download PDF

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KR101494034B1
KR101494034B1 KR1020107005679A KR20107005679A KR101494034B1 KR 101494034 B1 KR101494034 B1 KR 101494034B1 KR 1020107005679 A KR1020107005679 A KR 1020107005679A KR 20107005679 A KR20107005679 A KR 20107005679A KR 101494034 B1 KR101494034 B1 KR 101494034B1
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abrasive
delete delete
wafer
abrasive article
article
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Korean (ko)
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KR20100065328A (ko
Inventor
엘 찰스 하디
헤더 케이 크란즈
토마스 이 우드
데이비드 에이 카이사키
존 제이 가그리아디
존 씨 클라크
패트리샤 엠 사부
필립 지 클라크
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쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20100065328A publication Critical patent/KR20100065328A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020107005679A 2007-08-15 2008-07-08 반도체 제작에 적합한 표면 개질용 조성물 및 방법 Expired - Fee Related KR101494034B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/839,329 US8092707B2 (en) 1997-04-30 2007-08-15 Compositions and methods for modifying a surface suited for semiconductor fabrication
US11/839,329 2007-08-15
PCT/US2008/069396 WO2009023387A2 (en) 2007-08-15 2008-07-08 Compositions and methods for modifying a surface suited for semiconductor fabrication

Publications (2)

Publication Number Publication Date
KR20100065328A KR20100065328A (ko) 2010-06-16
KR101494034B1 true KR101494034B1 (ko) 2015-02-16

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KR1020107005679A Expired - Fee Related KR101494034B1 (ko) 2007-08-15 2008-07-08 반도체 제작에 적합한 표면 개질용 조성물 및 방법

Country Status (7)

Country Link
US (2) US8092707B2 (enExample)
EP (1) EP2186121B1 (enExample)
JP (1) JP5513384B2 (enExample)
KR (1) KR101494034B1 (enExample)
CN (1) CN101779274B (enExample)
TW (1) TWI460261B (enExample)
WO (1) WO2009023387A2 (enExample)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387970B2 (en) * 2003-05-07 2008-06-17 Freescale Semiconductor, Inc. Method of using an aqueous solution and composition thereof
US8372757B2 (en) 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
US8158532B2 (en) 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US7972970B2 (en) 2003-10-20 2011-07-05 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US8048708B2 (en) * 2008-06-25 2011-11-01 Micron Technology, Inc. Method and apparatus providing an imager module with a permanent carrier
KR101603361B1 (ko) * 2008-09-12 2016-03-14 페로 코포레이션 화학적-기계적 연마 조성물 및 그 제조 및 사용 방법
JP2010226089A (ja) * 2009-01-14 2010-10-07 Rohm & Haas Electronic Materials Llc 半導体ウェハをクリーニングする方法
GB0902429D0 (en) * 2009-02-13 2009-04-01 Probe Ind Ltd Compositions and their use
US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
MX2011009351A (es) * 2009-03-11 2011-11-02 Saint Gobain Abrasives Inc Articulos abrasivos que incluyen granos de alumina y zirconia fusionados con una forma mejorada.
WO2010104816A1 (en) * 2009-03-11 2010-09-16 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
MY156687A (en) * 2009-06-22 2016-03-15 Cabot Microelectronics Corp Cmp compositions and method for suppressing polysilicon removal rates
KR101126509B1 (ko) * 2009-07-23 2012-03-29 노벨러스 시스템즈, 인코포레이티드 등방성 구리 식각을 위한 식각 조성물
US8597461B2 (en) 2009-09-02 2013-12-03 Novellus Systems, Inc. Reduced isotropic etchant material consumption and waste generation
JP5646862B2 (ja) * 2009-09-18 2014-12-24 長興開発科技股▲ふん▼有限公司 シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
CN102666017B (zh) * 2009-12-02 2015-12-16 3M创新有限公司 双锥形成形磨粒
JP5877940B2 (ja) * 2010-04-08 2016-03-08 株式会社フジミインコーポレーテッド 銅及びシリコンが表面に露出したウェーハの研磨方法
US9837295B2 (en) 2010-04-15 2017-12-05 Suss Microtec Lithography Gmbh Apparatus and method for semiconductor wafer leveling, force balancing and contact sensing
US9859141B2 (en) 2010-04-15 2018-01-02 Suss Microtec Lithography Gmbh Apparatus and method for aligning and centering wafers
EP2587346B1 (en) * 2010-06-22 2017-04-19 Nissha Printing Co., Ltd. Production method of a narrow-frame touch input sheet superior in anti-rusting property
GB2484348A (en) * 2010-10-08 2012-04-11 Rec Wafer Norway As Abrasive slurry and method of production of photovoltaic wafers
TWI575040B (zh) * 2011-03-18 2017-03-21 長興開發科技股份有限公司 可用於拋光矽通孔晶圓之拋光組成物及其用途
JP5617065B2 (ja) * 2011-09-09 2014-11-05 東京エレクトロン株式会社 剥離方法、プログラム、コンピュータ記憶媒体及び剥離システム
SG11201400767WA (en) * 2011-09-30 2014-04-28 3M Innovative Properties Co Methods of continuously wet etching a patterned substrate
US20140197356A1 (en) * 2011-12-21 2014-07-17 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
CN102618174A (zh) * 2012-02-28 2012-08-01 南通海迅天恒纳米科技有限公司 高稀释比和高稳定性的硅片化学机械抛光组合物
TWI456013B (zh) * 2012-04-10 2014-10-11 Uwiz Technology Co Ltd 研磨液組成物
CN104221167A (zh) * 2012-05-09 2014-12-17 新加坡国立大学 硅片太阳能电池的非酸性各向同性回蚀
JP5154704B1 (ja) * 2012-06-29 2013-02-27 三島光産株式会社 研磨パッド成形金型の製造方法、その方法で製造される研磨パッド成形金型、及びその金型で製造した研磨パッド
EP2692816A1 (de) * 2012-08-02 2014-02-05 Robert Bosch Gmbh Schleifkorn mit einander durchdringenden flächigen Körpern
EP2692817A1 (de) * 2012-08-02 2014-02-05 Robert Bosch Gmbh Schleifkorn mit unter einem Winkel angeordneten Platten
CN104822495A (zh) * 2012-09-21 2015-08-05 3M创新有限公司 向固定磨料幅材中引入添加剂以改善cmp性能
US9388330B2 (en) * 2012-12-17 2016-07-12 Fuji Engineering Co., Ltd. Bag containing blasting material
TWI614093B (zh) * 2013-01-04 2018-02-11 福吉米股份有限公司 研磨用組成物、合金材料、合金材料之硏磨方法及合金材料之製造方法
US8957006B2 (en) * 2013-03-11 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning solution comprising an ether acetate for preventing pattern collapse
JP6209845B2 (ja) * 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
US10001442B2 (en) * 2013-06-13 2018-06-19 The Regents Of The University Of California Optical fiber-based hybrid SERS platform for in vivo detection of bio-molecules
EP3049215B1 (en) * 2013-09-25 2021-04-14 3M Innovative Properties Company Composite ceramic abrasive polishing solution
WO2015057433A1 (en) * 2013-10-18 2015-04-23 Cabot Microelectronics Corporation Polishing composition and method for nickel-phosphorous coated memory disks
EP3060642B1 (en) * 2013-10-21 2019-11-06 FujiFilm Electronic Materials USA, Inc. Cleaning formulations for removing residues on surfaces
CN104576351B (zh) * 2013-10-23 2017-09-22 中芯国际集成电路制造(上海)有限公司 化学机械研磨方法
KR101524624B1 (ko) * 2013-11-18 2015-06-03 주식회사 케이씨텍 고단차 연마용 슬러리 첨가제 조성물 및 이를 포함하는 고단차 연마용 슬러리 조성물
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
CN104726061A (zh) * 2013-12-19 2015-06-24 3M创新有限公司 磨料、研磨件及其制备方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
SG11201607700QA (en) * 2014-03-18 2016-10-28 Fujifilm Electronic Materials Etching composition
TWI558850B (zh) * 2014-03-29 2016-11-21 精密聚合物股份有限公司 電子零件用處理液及電子零件之製造方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
WO2016068182A1 (ja) * 2014-10-31 2016-05-06 富士フイルム株式会社 Ｍｒａｍドライエッチング残渣除去組成物、磁気抵抗メモリの製造方法、及び、コバルト除去組成物
CN104659156B (zh) * 2015-03-03 2017-05-17 中节能太阳能科技（镇江）有限公司 一种单晶硅太阳能电池的刻蚀方法
TWI603813B (zh) * 2015-04-20 2017-11-01 中國砂輪企業股份有限公司 研磨工具及其製造方法
TWI609742B (zh) * 2015-04-20 2018-01-01 中國砂輪企業股份有限公司 研磨工具
KR102447178B1 (ko) 2015-09-01 2022-09-26 삼성전자주식회사 반도체 장치의 제조 방법
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US9944829B2 (en) * 2015-12-03 2018-04-17 Treliant Fang Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
CN105710760A (zh) * 2016-04-22 2016-06-29 衡阳市宏达威环保科技有限公司 一种铝合金碱性研磨液
TWI664280B (zh) * 2016-10-11 2019-07-01 Fujifilm Electronic Materials U.S.A., Inc. 高溫cmp組成物及用於使用其之方法
US10711159B2 (en) 2016-12-30 2020-07-14 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions
CN106956212B (zh) * 2017-03-17 2018-12-04 衢州学院 一种采用化学抛光液和陶瓷抛光盘的氮化铝基片抛光方法
JP6938262B2 (ja) * 2017-07-24 2021-09-22 株式会社ディスコ ウエーハの加工方法
US11471999B2 (en) * 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
IL277275B2 (en) 2018-03-28 2023-11-01 Fujifilm Electronic Mat Usa Inc cleaning products
CN108504289A (zh) * 2018-04-03 2018-09-07 苏州晶瑞化学股份有限公司 一种金刚线切割多晶硅片制绒抛光调控剂
WO2019246500A1 (en) 2018-06-22 2019-12-26 Applied Materials, Inc. Catalyzed deposition of metal films
US10947414B2 (en) * 2018-07-31 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Compositions for use in chemical mechanical polishing
CN109015204B (zh) * 2018-08-29 2020-11-27 包头市利晨科技有限公司 一种适用于cr39树脂镜片的抛光方法
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
TWI856104B (zh) * 2019-06-03 2024-09-21 美商富士軟片電子材料美國股份有限公司 蝕刻組成物
US20220298417A1 (en) * 2019-06-13 2022-09-22 Versum Materials Us, Llc Liquid Compositions For Selectively Removing Polysilicon Over P-Doped Silicon And Silicon-Germanium During Manufacture Of A Semiconductor Device
CN110273158B (zh) * 2019-07-25 2021-02-26 郑州大学 一种用作医用镁合金缓蚀剂的席夫碱、其制备方法及利用其制备自修复耐蚀杂化涂层的方法
US11499099B2 (en) 2019-09-10 2022-11-15 Fujifilm Electronic Materials U.S.A., Inc. Etching composition
KR102358801B1 (ko) * 2019-12-27 2022-02-08 주식회사 케이씨텍 표면 처리 조성물 및 이를 이용한 표면 처리 방법
CN111170042A (zh) * 2020-02-21 2020-05-19 苏州凌云视界智能设备有限责任公司 一种柔性屏搬运载台
JP6780800B1 (ja) * 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
CN111469062B (zh) * 2020-04-15 2021-08-17 浙江工业大学 制动分离式液态金属研磨盘装置
JP7453874B2 (ja) 2020-07-30 2024-03-21 芝浦メカトロニクス株式会社 基板処理方法、および基板処理装置
CN112266832B (zh) * 2020-09-21 2021-08-24 江苏奥首材料科技有限公司 一种半导体芯片清洗剂及制备方法与应用
CN112408485B (zh) * 2020-11-26 2023-02-03 江西理工大学 一种制备阵列微/纳结构钨氧化物的方法
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113265224B (zh) * 2021-04-29 2021-11-30 郑州磨料磨具磨削研究所有限公司 一种喷雾型金刚石研磨液及其制备方法
WO2022240842A1 (en) * 2021-05-13 2022-11-17 Araca, Inc. Silicon carbide (sic) wafer polishing with slurry formulation and process
CN114907022B (zh) * 2022-04-28 2023-04-25 中国科学院合肥物质科学研究院 一种具有防结冰和除冰性能的高透明太阳光热转换涂层玻璃及其制备方法
US12237166B2 (en) * 2022-06-13 2025-02-25 Tokyo Electron Limited Methods for selective removal of surface oxides on metal films
CN118835250B (zh) * 2024-07-24 2025-09-26 河北工业大学 低去除速率铜布线钼阻挡层化学机械抛光液及其制备方法
CN119954532B (zh) * 2025-04-11 2025-09-05 湖北世宇新型建材有限公司 一种纸面石膏板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6592676B1 (en) 1999-01-08 2003-07-15 Interuniversitair Micro-Elektronica Centrum Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate

Family Cites Families (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1910444A (en) 1931-02-13 1933-05-23 Carborundum Co Process of making abrasive materials
US2115897A (en) 1935-05-15 1938-05-03 Carborundum Co Abrasive article
US2286208A (en) 1940-12-03 1942-06-16 Carborundum Co Granular coated article and its manufacture
US2485295A (en) 1947-09-17 1949-10-18 Adolph J Larson Pack of abrasive coated sheets
US2667436A (en) 1950-09-21 1954-01-26 Carborundum Co Pressure sensitive adhesive coated sheet material
US2952951A (en) 1952-07-28 1960-09-20 Simpson Harry Arthur Abrasive or like materials and articles
US2755607A (en) 1953-06-01 1956-07-24 Norton Co Coated abrasives
US3188265A (en) 1957-11-12 1965-06-08 Minnesota Mining & Mfg Packaging films
US2888785A (en) 1958-06-30 1959-06-02 Thelma E Kellican Eraser cleaner
US3041156A (en) 1959-07-22 1962-06-26 Norton Co Phenolic resin bonded grinding wheels
NL149551B (nl) 1964-08-04 1976-05-17 Dow Chemical Co Werkwijze voor het reinigen en passiveren van ijzerhoudende metaaloppervlakken, waarop metallisch koper is afgezet.
US3324608A (en) 1965-01-27 1967-06-13 Thompson Proc Co Inc Facing assembly for lens grinding tools and the like
US3504457A (en) 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US3499250A (en) 1967-04-07 1970-03-10 Geoscience Instr Corp Polishing apparatus
US3605349A (en) 1969-05-08 1971-09-20 Frederick B Anthon Abrasive finishing article
US3594865A (en) 1969-07-10 1971-07-27 American Velcro Inc Apparatus for molding plastic shapes in molding recesses formed in moving endless wire dies
US3849949A (en) 1972-10-10 1974-11-26 Minnesota Mining & Mfg Roll of pressure sensitive adhesive, adhesive coated abrasive discs and dispenser
US3916584A (en) 1973-03-22 1975-11-04 Minnesota Mining & Mfg Spheroidal composite particle and method of making
US3875703A (en) 1973-12-26 1975-04-08 Joseph V Clemente Flexible sanding disc unit
US3911562A (en) 1974-01-14 1975-10-14 Signetics Corp Method of chemical polishing of planar silicon structures having filled grooves therein
US3887446A (en) 1974-07-26 1975-06-03 Us Navy Electrochemical preparation of metallic tellurides
US4138228A (en) 1977-02-02 1979-02-06 Ralf Hoehn Abrasive of a microporous polymer matrix with inorganic particles thereon
US4255164A (en) 1979-04-30 1981-03-10 Minnesota Mining And Manufacturing Company Fining sheet and method of making and using the same
US4314827A (en) 1979-06-29 1982-02-09 Minnesota Mining And Manufacturing Company Non-fused aluminum oxide-based abrasive mineral
US4355110A (en) 1979-07-19 1982-10-19 Miller Brewing Company Preparation of debranching enzyme from rice for producing a low calorie beer
US4479981A (en) * 1982-05-03 1984-10-30 Ashland Oil, Inc. Water-borne hard coating compositions and processes therefor
US4509581A (en) 1982-05-20 1985-04-09 Wirtz Manufacturing Company, Inc. Machine for continuously casting battery grids
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US5527368C1 (en) 1983-03-11 2001-05-08 Norton Co Coated abrasives with rapidly curable adhesives
US4563388A (en) 1983-03-28 1986-01-07 Minnesota Mining And Manufacturing Company Polyolefin substrate coated with acrylic-type normally tacky and pressure-sensitive adhesive and a method of making same
US4642221A (en) 1983-07-05 1987-02-10 Atlantic Richfield Company Method and composition for inhibiting corrosion in aqueous heat transfer systems
US4623364A (en) 1984-03-23 1986-11-18 Norton Company Abrasive material and method for preparing the same
US4642126A (en) 1985-02-11 1987-02-10 Norton Company Coated abrasives with rapidly curable adhesives and controllable curvature
US4609581A (en) 1985-04-15 1986-09-02 Minnesota Mining And Manufacturing Company Coated abrasive sheet material with loop attachment means
CA1254238A (en) 1985-04-30 1989-05-16 Alvin P. Gerk Process for durable sol-gel produced alumina-based ceramics, abrasive grain and abrasive products
US4652275A (en) 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Erodable agglomerates and abrasive products containing the same
US4652274A (en) 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Coated abrasive product having radiation curable binder
US4671851A (en) 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4773920B1 (en) 1985-12-16 1995-05-02 Minnesota Mining & Mfg Coated abrasive suitable for use as a lapping material.
US4749617A (en) 1985-12-18 1988-06-07 Minnesota Mining And Manufacturing Company Composite article containing rigid layers
US4770671A (en) 1985-12-30 1988-09-13 Minnesota Mining And Manufacturing Company Abrasive grits formed of ceramic containing oxides of aluminum and yttrium, method of making and using the same and products made therewith
US4644703A (en) 1986-03-13 1987-02-24 Norton Company Plural layered coated abrasive
US4927432A (en) 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US4751138A (en) 1986-08-11 1988-06-14 Minnesota Mining And Manufacturing Company Coated abrasive having radiation curable binder
US4799939A (en) 1987-02-26 1989-01-24 Minnesota Mining And Manufacturing Company Erodable agglomerates and abrasive products containing the same
US4735632A (en) 1987-04-02 1988-04-05 Minnesota Mining And Manufacturing Company Coated abrasive binder containing ternary photoinitiator system
US4881951A (en) 1987-05-27 1989-11-21 Minnesota Mining And Manufacturing Co. Abrasive grits formed of ceramic containing oxides of aluminum and rare earth metal, method of making and products made therewith
GB8718219D0 (en) * 1987-07-31 1987-09-09 Unilever Plc Liquid abrasive cleaning composition
US4933234A (en) 1987-08-13 1990-06-12 Minnesota Mining And Manufacturing Company Primed polymeric surfaces for cyanoacrylate adhesives
US4950696A (en) 1987-08-28 1990-08-21 Minnesota Mining And Manufacturing Company Energy-induced dual curable compositions
US4906523A (en) 1987-09-24 1990-03-06 Minnesota Mining And Manufacturing Company Primer for surfaces containing inorganic oxide
JP2707264B2 (ja) 1987-12-28 1998-01-28 ハイ・コントロール・リミテッド 研磨シートおよびその製造方法
JPH01188599A (ja) * 1988-01-22 1989-07-27 Daikin Ind Ltd 共沸溶剤組成物
US4930266A (en) 1988-02-26 1990-06-05 Minnesota Mining And Manufacturing Company Abrasive sheeting having individually positioned abrasive granules
US4974373A (en) 1988-03-14 1990-12-04 Tokyo Magnetic Printing Co., Ltd. Abrasive tools
US4885332A (en) 1988-04-11 1989-12-05 Minnesota Mining And Manufacturing Company Photocurable abrasion resistant coatings comprising silicon dioxide dispersions
US5104929A (en) 1988-04-11 1992-04-14 Minnesota Mining And Manufacturing Company Abrasion resistant coatings comprising silicon dioxide dispersions
US5254194A (en) 1988-05-13 1993-10-19 Minnesota Mining And Manufacturing Company Coated abrasive sheet material with loop material for attachment incorporated therein
US4985340A (en) 1988-06-01 1991-01-15 Minnesota Mining And Manufacturing Company Energy curable compositions: two component curing agents
CH675250A5 (enExample) 1988-06-17 1990-09-14 Lonza Ag
US4879258A (en) 1988-08-31 1989-11-07 Texas Instruments Incorporated Integrated circuit planarization by mechanical polishing
US5011508A (en) 1988-10-14 1991-04-30 Minnesota Mining And Manufacturing Company Shelling-resistant abrasive grain, a method of making the same, and abrasive products
US4903440A (en) 1988-11-23 1990-02-27 Minnesota Mining And Manufacturing Company Abrasive product having binder comprising an aminoplast resin
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4959265A (en) 1989-04-17 1990-09-25 Minnesota Mining And Manufacturing Company Pressure-sensitive adhesive tape fastener for releasably attaching an object to a fabric
US5014468A (en) 1989-05-05 1991-05-14 Norton Company Patterned coated abrasive for fine surface finishing
US5061294A (en) 1989-05-15 1991-10-29 Minnesota Mining And Manufacturing Company Abrasive article with conductive, doped, conjugated, polymer coat and method of making same
US5011513A (en) 1989-05-31 1991-04-30 Norton Company Single step, radiation curable ophthalmic fining pad
US4997461A (en) 1989-09-11 1991-03-05 Norton Company Nitrified bonded sol gel sintered aluminous abrasive bodies
US5068280A (en) 1989-09-12 1991-11-26 The Dow Chemical Company Polyurethane and/or polyurea dispersions in active hydrogen-containing compositions
US5141790A (en) 1989-11-20 1992-08-25 Minnesota Mining And Manufacturing Company Repositionable pressure-sensitive adhesive tape
US5199227A (en) 1989-12-20 1993-04-06 Minnesota Mining And Manufacturing Company Surface finishing tape
US5020283A (en) 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5177908A (en) 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5104421B1 (en) 1990-03-23 1993-11-16 Fujimi Abrasives Co.,Ltd. Polishing method of goods and abrasive pad therefor
EP0627281A3 (en) 1990-03-30 1994-12-21 Ronald Carlysle Wiand Rotary pads for finishing marble, granite and stone
US5085671A (en) 1990-05-02 1992-02-04 Minnesota Mining And Manufacturing Company Method of coating alumina particles with refractory material, abrasive particles made by the method and abrasive products containing the same
US5082540A (en) 1990-05-07 1992-01-21 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fluoride ion sensitive materials
US5607488A (en) 1990-05-21 1997-03-04 Wiand; Ronald C. Molded abrasive article and process
US5174795A (en) 1990-05-21 1992-12-29 Wiand Ronald C Flexible abrasive pad with ramp edge surface
US5137542A (en) 1990-08-08 1992-08-11 Minnesota Mining And Manufacturing Company Abrasive printed with an electrically conductive ink
US5370718A (en) 1990-08-22 1994-12-06 Hitachi Maxell, Ltd. Abrasive tape
US5077870A (en) 1990-09-21 1992-01-07 Minnesota Mining And Manufacturing Company Mushroom-type hook strip for a mechanical fastener
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6110881A (en) 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5378251A (en) 1991-02-06 1995-01-03 Minnesota Mining And Manufacturing Company Abrasive articles and methods of making and using same
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5107626A (en) 1991-02-06 1992-04-28 Minnesota Mining And Manufacturing Company Method of providing a patterned surface on a substrate
US5236472A (en) 1991-02-22 1993-08-17 Minnesota Mining And Manufacturing Company Abrasive product having a binder comprising an aminoplast binder
JPH05177523A (ja) 1991-06-06 1993-07-20 Commiss Energ Atom 張設された微小研磨剤小板、および改良されたウエハー支持ヘッドを備えた研磨装置
US5197999A (en) 1991-09-30 1993-03-30 National Semiconductor Corporation Polishing pad for planarization
US5320706A (en) 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
US5219462A (en) 1992-01-13 1993-06-15 Minnesota Mining And Manufacturing Company Abrasive article having abrasive composite members positioned in recesses
US5437754A (en) 1992-01-13 1995-08-01 Minnesota Mining And Manufacturing Company Abrasive article having precise lateral spacing between abrasive composite members
US5368618A (en) 1992-01-22 1994-11-29 Minnesota Mining And Manufacturing Company Method of making a coated abrasive article
US5178646A (en) 1992-01-22 1993-01-12 Minnesota Mining And Manufacturing Company Coatable thermally curable binder presursor solutions modified with a reactive diluent, abrasive articles incorporating same, and methods of making said abrasive articles
US5256170A (en) 1992-01-22 1993-10-26 Minnesota Mining And Manufacturing Company Coated abrasive article and method of making same
US5222329A (en) 1992-03-26 1993-06-29 Micron Technology, Inc. Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials
US5445996A (en) 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5203884A (en) 1992-06-04 1993-04-20 Minnesota Mining And Manufacturing Company Abrasive article having vanadium oxide incorporated therein
US5366523A (en) 1992-07-23 1994-11-22 Minnesota Mining And Manufacturing Company Abrasive article containing shaped abrasive particles
US5213591A (en) 1992-07-28 1993-05-25 Ahmet Celikkaya Abrasive grain, method of making same and abrasive products
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6069080A (en) 1992-08-19 2000-05-30 Rodel Holdings, Inc. Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like
US5307593A (en) 1992-08-31 1994-05-03 Minnesota Mining And Manufacturing Company Method of texturing rigid memory disks using an abrasive article
JP2839801B2 (ja) 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
US5232875A (en) 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
WO1994013434A1 (en) 1992-12-17 1994-06-23 Minnesota Mining And Manufacturing Company Reduced viscosity slurries, abrasive articles made therefrom, and methods of making said articles
US5342419A (en) 1992-12-31 1994-08-30 Minnesota Mining And Manufacturing Company Abrasive composites having a controlled rate of erosion, articles incorporating same, and methods of making and using same
US5435816A (en) 1993-01-14 1995-07-25 Minnesota Mining And Manufacturing Company Method of making an abrasive article
US5424224A (en) 1993-01-19 1995-06-13 Texas Instruments Incorporated Method of surface protection of a semiconductor wafer during polishing
CA2113318A1 (en) 1993-01-28 1994-07-29 Robert J. Jantschek Abrasive attachment system for rotative abrading applications
EP0616362A3 (en) 1993-03-15 1995-06-21 Tokyo Shibaura Electric Co Process for polishing workpieces and device therefor.
GB9309972D0 (en) 1993-05-14 1993-06-30 De Beers Ind Diamond Tool insert
US5460742A (en) * 1993-05-18 1995-10-24 Reckitt & Colman Inc. Aqueous acidic hard surface cleaner with abrasive
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5549962A (en) 1993-06-30 1996-08-27 Minnesota Mining And Manufacturing Company Precisely shaped particles and method of making the same
JP2622069B2 (ja) 1993-06-30 1997-06-18 三菱マテリアル株式会社 研磨布のドレッシング装置
BE1007281A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5378252A (en) 1993-09-03 1995-01-03 Minnesota Mining And Manufacturing Company Abrasive articles
US5489235A (en) 1993-09-13 1996-02-06 Minnesota Mining And Manufacturing Company Abrasive article and method of making same
JP2832138B2 (ja) 1993-09-30 1998-12-02 信越半導体株式会社 ウェーハ外周部の研磨装置
US5454844A (en) 1993-10-29 1995-10-03 Minnesota Mining And Manufacturing Company Abrasive article, a process of making same, and a method of using same to finish a workpiece surface
US5453312A (en) 1993-10-29 1995-09-26 Minnesota Mining And Manufacturing Company Abrasive article, a process for its manufacture, and a method of using it to reduce a workpiece surface
CA2133259A1 (en) 1993-10-29 1995-04-30 Gene O. Lindholm Method for the polishing and finishing of optical lenses
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
CA2134156A1 (en) 1993-11-22 1995-05-23 Thomas P. Klun Coatable compositions, abrasive articles made therefrom, and methods of making and using same
US5575885A (en) 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
US5653623A (en) 1993-12-14 1997-08-05 Ebara Corporation Polishing apparatus with improved exhaust
US5391210A (en) 1993-12-16 1995-02-21 Minnesota Mining And Manufacturing Company Abrasive article
US5441598A (en) 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5505747A (en) 1994-01-13 1996-04-09 Minnesota Mining And Manufacturing Company Method of making an abrasive article
US5417725A (en) 1994-02-01 1995-05-23 Graves; Gordon C. Penetration and fixture freeing agent
US5422316A (en) 1994-03-18 1995-06-06 Memc Electronic Materials, Inc. Semiconductor wafer polisher and method
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5622875A (en) 1994-05-06 1997-04-22 Kobe Precision, Inc. Method for reclaiming substrate from semiconductor wafers
USD366365S (en) 1994-05-11 1996-01-23 Minnesota Mining And Manufacturing Company Coated abrasive sheet article
JP2894209B2 (ja) 1994-06-03 1999-05-24 信越半導体株式会社 シリコンウェーハ研磨用パッド及び研磨方法
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5607341A (en) 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
JPH0947947A (ja) 1994-08-30 1997-02-18 Seiko Seiki Co Ltd 研削装置、並びに研削方法、並びに半導体装置及び半導体基板の製造方法
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
JP2616736B2 (ja) 1995-01-25 1997-06-04 日本電気株式会社 ウエーハ研磨装置
JP3305557B2 (ja) 1995-04-10 2002-07-22 大日本印刷株式会社 研磨テープ、その製造方法および研磨テープ用塗工剤
US5507978A (en) * 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
TW303487B (enExample) 1995-05-29 1997-04-21 Shinetsu Handotai Co Ltd
US6046110A (en) 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
JPH0982668A (ja) 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
JPH09258397A (ja) 1996-03-19 1997-10-03 Fuji Photo Film Co Ltd ハロゲン化銀感光材料
US5780358A (en) 1996-04-08 1998-07-14 Chartered Semiconductor Manufacturing Ltd. Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
SG68005A1 (en) 1996-12-02 1999-10-19 Fujimi Inc Polishing composition
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
CA2287404C (en) * 1997-04-30 2007-10-16 David A. Kaisaki Method of planarizing the upper surface of a semiconductor wafer
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6096652A (en) 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6066028A (en) 1998-12-14 2000-05-23 The United States Of America As Represented By The Secretary Of The Navy Polishing of copper
US6376381B1 (en) 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20030006396A1 (en) 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
KR20040002907A (ko) * 2001-04-12 2004-01-07 로델 홀딩스 인코포레이티드 계면활성제를 갖는 연마 조성물
US20030176151A1 (en) 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
JP4159084B2 (ja) 2002-11-15 2008-10-01 シチズン電子株式会社 傾斜スイッチ
US20050056810A1 (en) 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US20080182413A1 (en) * 2006-08-16 2008-07-31 Menk Gregory E Selective chemistry for fixed abrasive cmp
US8591764B2 (en) 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
WO2009058463A1 (en) 2007-10-31 2009-05-07 3M Innovative Properties Company Composition, method and process for polishing a wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6592676B1 (en) 1999-01-08 2003-07-15 Interuniversitair Micro-Elektronica Centrum Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate

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