KR101473784B1 - 에피택셜 실리콘 웨이퍼의 제조 방법 및, 에피택셜 실리콘 웨이퍼 - Google Patents

에피택셜 실리콘 웨이퍼의 제조 방법 및, 에피택셜 실리콘 웨이퍼 Download PDF

Info

Publication number
KR101473784B1
KR101473784B1 KR1020130072869A KR20130072869A KR101473784B1 KR 101473784 B1 KR101473784 B1 KR 101473784B1 KR 1020130072869 A KR1020130072869 A KR 1020130072869A KR 20130072869 A KR20130072869 A KR 20130072869A KR 101473784 B1 KR101473784 B1 KR 101473784B1
Authority
KR
South Korea
Prior art keywords
silicon wafer
epitaxial
single crystal
crystal ingot
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020130072869A
Other languages
English (en)
Korean (ko)
Other versions
KR20140002509A (ko
Inventor
타다시 가와시마
나오야 노나카
마사유키 시나가와
고우 우에소노
Original Assignee
가부시키가이샤 사무코
사무코 테크시부 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 사무코, 사무코 테크시부 가부시키가이샤 filed Critical 가부시키가이샤 사무코
Publication of KR20140002509A publication Critical patent/KR20140002509A/ko
Application granted granted Critical
Publication of KR101473784B1 publication Critical patent/KR101473784B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
KR1020130072869A 2012-06-29 2013-06-25 에피택셜 실리콘 웨이퍼의 제조 방법 및, 에피택셜 실리콘 웨이퍼 Active KR101473784B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-146636 2012-06-29
JP2012146636A JP5845143B2 (ja) 2012-06-29 2012-06-29 エピタキシャルシリコンウェーハの製造方法、および、エピタキシャルシリコンウェーハ

Publications (2)

Publication Number Publication Date
KR20140002509A KR20140002509A (ko) 2014-01-08
KR101473784B1 true KR101473784B1 (ko) 2014-12-17

Family

ID=49777243

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130072869A Active KR101473784B1 (ko) 2012-06-29 2013-06-25 에피택셜 실리콘 웨이퍼의 제조 방법 및, 에피택셜 실리콘 웨이퍼

Country Status (3)

Country Link
US (2) US9425264B2 (enExample)
JP (1) JP5845143B2 (enExample)
KR (1) KR101473784B1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105121713B (zh) 2013-04-24 2018-06-19 胜高科技股份有限公司 单晶的制造方法和硅晶片的制造方法
CN106797207B (zh) * 2014-12-17 2021-04-20 株式会社村田制作所 压电振子以及压电振动装置
JP6477210B2 (ja) * 2015-04-30 2019-03-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6369388B2 (ja) * 2015-05-13 2018-08-08 信越半導体株式会社 シリコン単結晶基板の評価方法
JP6432879B2 (ja) * 2015-11-13 2018-12-05 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6447960B2 (ja) * 2016-04-01 2019-01-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP6372709B2 (ja) * 2016-04-20 2018-08-15 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6598140B2 (ja) * 2016-05-19 2019-10-30 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6973475B2 (ja) 2017-04-06 2021-12-01 株式会社Sumco エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ
US20200135460A1 (en) 2017-04-25 2020-04-30 Sumco Corporation Single crystal silicon production method, epitaxial silicon wafer production method, single crystal silicon, and epitaxial silicon wafer
CN108878310B (zh) * 2017-05-12 2022-01-25 无锡华润安盛科技有限公司 芯片切割系统及其控制电路
CN109509704B (zh) * 2017-09-15 2024-08-09 胜高股份有限公司 外延硅晶片的制备方法
JP6835006B2 (ja) * 2018-02-16 2021-02-24 株式会社Sumco エピタキシャルシリコンウェーハにおける積層欠陥の発生予測方法及びエピタキシャルシリコンウェーハの製造方法
JP6713493B2 (ja) * 2018-02-26 2020-06-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及びエピタキシャルシリコンウェーハ
JP7519784B2 (ja) 2020-02-19 2024-07-22 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法
JP7491705B2 (ja) * 2020-02-19 2024-05-28 グローバルウェーハズ・ジャパン株式会社 半導体シリコンウェーハの製造方法
JP7495238B2 (ja) 2020-02-19 2024-06-04 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法
CN115868004A (zh) * 2020-07-02 2023-03-28 阿托梅拉公司 使用具有不同非半导体热稳定性的超晶格制造半导体器件的方法
CN112426527B (zh) * 2020-11-30 2021-09-28 南京大学 一种具有抗肿瘤功能的二维红磷纳米材料
JP7757916B2 (ja) * 2021-11-04 2025-10-22 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP7658332B2 (ja) 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP7757917B2 (ja) * 2021-11-04 2025-10-22 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP7775800B2 (ja) * 2022-09-08 2025-11-26 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286268A (ja) * 1999-03-31 2000-10-13 Sumitomo Metal Ind Ltd 半導体シリコンウェーハの製造方法
JP2006186174A (ja) * 2004-12-28 2006-07-13 Shin Etsu Handotai Co Ltd シリコンウエーハの研磨方法および製造方法および円板状ワークの研磨装置ならびにシリコンウエーハ
KR100827038B1 (ko) * 2006-12-21 2008-05-02 주식회사 실트론 헤이즈가 없는 실리콘 에피택셜 웨이퍼의 제조 방법
JP2011009613A (ja) * 2009-06-29 2011-01-13 Sumco Corp エピタキシャルシリコンウェーハとその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2790009B2 (ja) 1992-12-11 1998-08-27 信越半導体株式会社 シリコンエピタキシャル層の成長方法および成長装置
JP3824675B2 (ja) 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ 結晶製造装置
EP0798765A3 (en) * 1996-03-28 1998-08-05 Shin-Etsu Handotai Company Limited Method of manufacturing a semiconductor wafer comprising a dopant evaporation preventive film on one main surface and an epitaxial layer on the other main surface
JP3407629B2 (ja) * 1997-12-17 2003-05-19 信越半導体株式会社 シリコン単結晶ウエーハの熱処理方法ならびにシリコン単結晶ウエーハ
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
US6663709B2 (en) * 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
JP4089809B2 (ja) 2002-03-13 2008-05-28 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハのエッジ部の酸化膜除去装置
EP1576207A2 (en) 2002-05-07 2005-09-21 Microfabrica Inc. Methods of and apparatus for molding structures
KR100603588B1 (ko) 2004-06-09 2006-07-24 주식회사 하이닉스반도체 낮은 콘택 저항을 갖는 반도체 소자 및 그 제조 방법
JP5012554B2 (ja) 2008-02-19 2012-08-29 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
TWI442478B (zh) 2008-03-05 2014-06-21 勝高股份有限公司 矽基板及其製造方法
JP5347288B2 (ja) * 2008-03-17 2013-11-20 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP2010153631A (ja) * 2008-12-25 2010-07-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルシリコンウェーハとその製造方法
DE102009010556B4 (de) 2009-02-25 2013-11-07 Siltronic Ag Verfahren zur Herstellung von epitaxierten Siliciumscheiben
JP5463693B2 (ja) 2009-03-03 2014-04-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP5609025B2 (ja) 2009-06-29 2014-10-22 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP2011029440A (ja) 2009-07-27 2011-02-10 Renesas Electronics Corp 半導体装置の製造方法および条件出力システム
JP5445075B2 (ja) 2009-11-27 2014-03-19 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP6009237B2 (ja) 2012-06-18 2016-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルシリコンウェーハの製造方法、および、エピタキシャルシリコンウェーハ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286268A (ja) * 1999-03-31 2000-10-13 Sumitomo Metal Ind Ltd 半導体シリコンウェーハの製造方法
JP2006186174A (ja) * 2004-12-28 2006-07-13 Shin Etsu Handotai Co Ltd シリコンウエーハの研磨方法および製造方法および円板状ワークの研磨装置ならびにシリコンウエーハ
KR100827038B1 (ko) * 2006-12-21 2008-05-02 주식회사 실트론 헤이즈가 없는 실리콘 에피택셜 웨이퍼의 제조 방법
JP2011009613A (ja) * 2009-06-29 2011-01-13 Sumco Corp エピタキシャルシリコンウェーハとその製造方法

Also Published As

Publication number Publication date
US20150380493A1 (en) 2015-12-31
US9755022B2 (en) 2017-09-05
JP5845143B2 (ja) 2016-01-20
JP2014011293A (ja) 2014-01-20
KR20140002509A (ko) 2014-01-08
US9425264B2 (en) 2016-08-23
US20140001605A1 (en) 2014-01-02

Similar Documents

Publication Publication Date Title
KR101473784B1 (ko) 에피택셜 실리콘 웨이퍼의 제조 방법 및, 에피택셜 실리콘 웨이퍼
CN107533959B (zh) 外延硅晶片的制造方法
KR101953782B1 (ko) 단결정 제조 방법 및 실리콘 웨이퍼 제조 방법
USRE49657E1 (en) Epitaxial wafer manufacturing method and epitaxial wafer
KR20190007502A (ko) 단결정 실리콘 판상체 및 그의 제조 방법
JP5533869B2 (ja) エピタキシャルシリコンウェーハとその製造方法
JP5246065B2 (ja) エピタキシャルシリコンウェーハとその製造方法
JP2025157587A (ja) シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP2025146998A (ja) シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP7757917B2 (ja) シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP2021130577A (ja) 半導体シリコンウェーハの製造方法
CN109509704B (zh) 外延硅晶片的制备方法
JP7775800B2 (ja) シリコンウェーハおよびエピタキシャルシリコンウェーハ
JP7658332B2 (ja) シリコンウェーハおよびエピタキシャルシリコンウェーハ
CN116072515A (zh) 硅晶片和外延硅晶片
JP2009194220A (ja) シリコンウェーハの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20171201

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000