KR101393353B1 - 발광다이오드 - Google Patents

발광다이오드 Download PDF

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Publication number
KR101393353B1
KR101393353B1 KR1020070108686A KR20070108686A KR101393353B1 KR 101393353 B1 KR101393353 B1 KR 101393353B1 KR 1020070108686 A KR1020070108686 A KR 1020070108686A KR 20070108686 A KR20070108686 A KR 20070108686A KR 101393353 B1 KR101393353 B1 KR 101393353B1
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South Korea
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layer
emitting diode
light emitting
type semiconductor
transparent electrode
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KR1020070108686A
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Korean (ko)
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KR20090043057A (ko
Inventor
김화목
김대원
갈대성
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서울바이오시스 주식회사
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40581658&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101393353(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020070108686A priority Critical patent/KR101393353B1/ko
Priority to JP2008196779A priority patent/JP5259292B2/ja
Priority to US12/203,762 priority patent/US7863599B2/en
Publication of KR20090043057A publication Critical patent/KR20090043057A/ko
Priority to US12/942,635 priority patent/US7982207B2/en
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Publication of KR101393353B1 publication Critical patent/KR101393353B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
KR1020070108686A 2007-10-29 2007-10-29 발광다이오드 Active KR101393353B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020070108686A KR101393353B1 (ko) 2007-10-29 2007-10-29 발광다이오드
JP2008196779A JP5259292B2 (ja) 2007-10-29 2008-07-30 発光ダイオード
US12/203,762 US7863599B2 (en) 2007-10-29 2008-09-03 Light emitting diode
US12/942,635 US7982207B2 (en) 2007-10-29 2010-11-09 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070108686A KR101393353B1 (ko) 2007-10-29 2007-10-29 발광다이오드

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020100052445A Division KR101165253B1 (ko) 2010-06-03 2010-06-03 발광다이오드

Publications (2)

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KR20090043057A KR20090043057A (ko) 2009-05-06
KR101393353B1 true KR101393353B1 (ko) 2014-05-13

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ID=40581658

Family Applications (1)

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KR1020070108686A Active KR101393353B1 (ko) 2007-10-29 2007-10-29 발광다이오드

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US (2) US7863599B2 (https=)
JP (1) JP5259292B2 (https=)
KR (1) KR101393353B1 (https=)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
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KR101393353B1 (ko) * 2007-10-29 2014-05-13 서울바이오시스 주식회사 발광다이오드
US8115222B2 (en) * 2008-01-16 2012-02-14 Rohm Co., Ltd. Semiconductor light emitting device and fabrication method for the semiconductor light emitting device
US20110316033A1 (en) * 2009-03-05 2011-12-29 Koito Manufacturing Co., Ltd. Light emitting module, method of manufacturing the light emitting module, and lamp unit
JP2011066047A (ja) * 2009-09-15 2011-03-31 Sharp Corp 窒化物半導体発光素子
KR101039886B1 (ko) * 2009-10-21 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
JP5106558B2 (ja) * 2010-03-09 2012-12-26 株式会社東芝 発光素子およびその製造方法
KR101081135B1 (ko) 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101163861B1 (ko) 2010-03-22 2012-07-09 엘지이노텍 주식회사 발광소자, 전극 구조 및 발광 소자 패키지
KR101666442B1 (ko) * 2010-03-25 2016-10-17 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
KR101054984B1 (ko) * 2010-03-26 2011-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101047792B1 (ko) * 2010-04-23 2011-07-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
WO2011145794A1 (ko) 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
KR20120003775A (ko) 2010-07-05 2012-01-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
JP2012028381A (ja) * 2010-07-20 2012-02-09 Sharp Corp 半導体発光素子およびその製造方法
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WO2012015153A2 (en) * 2010-07-28 2012-02-02 Seoul Opto Device Co., Ltd. Light emitting diode having distributed bragg reflector
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KR101259482B1 (ko) * 2010-09-24 2013-05-06 서울옵토디바이스주식회사 고효율 발광다이오드
JP2012124321A (ja) * 2010-12-08 2012-06-28 Showa Denko Kk 半導体発光素子、ランプおよび半導体発光素子の製造方法
KR20120084104A (ko) * 2011-01-19 2012-07-27 엘지전자 주식회사 태양전지
TWI529963B (zh) * 2011-07-25 2016-04-11 廣鎵光電股份有限公司 發光元件結構
CN102903802B (zh) * 2011-07-28 2015-09-16 上海博恩世通光电股份有限公司 具有dbr型电流阻挡层的led芯片及其制作方法
CN102903800B (zh) * 2011-07-28 2015-01-14 上海博恩世通光电股份有限公司 N型导电导热超晶格dbr垂直式蓝光led芯片及其制作方法
CN102903801B (zh) * 2011-07-28 2015-06-10 上海博恩世通光电股份有限公司 具有粘附性电流阻挡层的led芯片及其制作方法
KR101872735B1 (ko) * 2011-11-15 2018-08-02 엘지이노텍 주식회사 발광소자 패키지
CN103249250A (zh) * 2012-02-08 2013-08-14 欧司朗股份有限公司 电路板及其制造方法和包括该电路板的照明装置
CN103325905B (zh) * 2012-03-20 2016-01-06 山东浪潮华光光电子股份有限公司 一种具有电流阻挡结构的GaN基发光二极管芯片及其制作方法
CN102646772A (zh) * 2012-05-11 2012-08-22 东南大学 一种具有背镀结构的发光二极管
CN102709421B (zh) * 2012-06-21 2014-11-05 安徽三安光电有限公司 一种具有双反射层的氮化镓基发光二极管
CN102709420B (zh) * 2012-06-21 2014-07-30 安徽三安光电有限公司 一种氮化镓基发光二极管
CN102810609B (zh) * 2012-08-16 2015-01-21 厦门市三安光电科技有限公司 一种紫外半导体发光器件及其制造方法
TWI610416B (zh) * 2013-02-15 2018-01-01 首爾偉傲世有限公司 抗靜電放電的ｌｅｄ晶片以及包含該ｌｅｄ晶片的ｌｅｄ封裝
US20140231852A1 (en) 2013-02-15 2014-08-21 Seoul Viosys Co., Ltd. Led chip resistant to electrostatic discharge and led package including the same
KR20140116574A (ko) * 2013-03-25 2014-10-06 인텔렉추얼디스커버리 주식회사 발광소자 및 이의 제조방법
KR101590585B1 (ko) * 2013-09-02 2016-02-01 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법
CN103700742B (zh) * 2013-12-18 2016-09-07 同辉电子科技股份有限公司 具有高反射率电极的发光二极管及其制作方法
US9419185B2 (en) 2014-01-27 2016-08-16 Glo Ab Method of singulating LED wafer substrates into dice with LED device with Bragg reflector
CN104091874B (zh) * 2014-07-01 2017-01-18 天津三安光电有限公司 发光二极管
JP6269362B2 (ja) * 2014-07-15 2018-01-31 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
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Also Published As

Publication number Publication date
JP2009111342A (ja) 2009-05-21
US7982207B2 (en) 2011-07-19
US20110049472A1 (en) 2011-03-03
KR20090043057A (ko) 2009-05-06
US7863599B2 (en) 2011-01-04
JP5259292B2 (ja) 2013-08-07
US20090108250A1 (en) 2009-04-30

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