JP6117541B2 - 紫外線発光素子 - Google Patents
紫外線発光素子 Download PDFInfo
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- JP6117541B2 JP6117541B2 JP2012271867A JP2012271867A JP6117541B2 JP 6117541 B2 JP6117541 B2 JP 6117541B2 JP 2012271867 A JP2012271867 A JP 2012271867A JP 2012271867 A JP2012271867 A JP 2012271867A JP 6117541 B2 JP6117541 B2 JP 6117541B2
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- 239000010410 layer Substances 0.000 claims description 495
- 239000004065 semiconductor Substances 0.000 claims description 211
- 239000000758 substrate Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 238000000605 extraction Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 229910019897 RuOx Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- -1 that is Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims (25)
- 基板と、
前記基板の上に配置され、多数の化合物半導体層を含み、前記化合物半導体層は少なくとも第1導電型半導体層、活性層、及び第2導電型半導体層を含む発光構造物と、
前記第1導電型半導体層の第1領域の上に配置される第1電極層と、
前記第2導電型半導体層の上に配置される第2電極層と、
前記第1導電型半導体層と前記第1電極層との間に配置されるオーミック層と、を含み、
前記第1電極層は前記活性層の側面から離隔するように配置され、
前記第1電極層は前記活性層の周りに沿って配置され、
前記第1及び第2電極層のうちの少なくとも1つは反射層を含み、
前記オーミック層は、前記活性層の周りに沿って配置される閉ループ形状(closed-loop shape)であり、
前記オーミック層は、前記第1導電型半導体層の側面に接するように配置されることを特徴とする、紫外線発光素子。 - 前記第1電極層は、1つまたは2つ以上の層を含むことを特徴とする、請求項1に記載の紫外線発光素子。
- 前記第1電極層は240nm乃至360nmの波長を有する紫外線光を反射させる物質を含むことを特徴とする、請求項1に記載の紫外線発光素子。
- 前記物質は不透明な金属物質であることを特徴とする、請求項3に記載の紫外線発光素子。
- 前記活性層と前記第1導電型半導体層と前記第2導電型半導体層がオーバーラップする第2領域を含むことを特徴とする、請求項1に記載の紫外線発光素子。
- 前記第1領域に配置された前記第1電極層の上面を含む平面と、前記第2領域に配置された前記第2電極層の下面を含む平面との間の垂直距離は、少なくとも前記第2領域の前記活性層及び前記第2導電型半導体層の厚さより大きいことを特徴とする、請求項5に記載の紫外線発光素子。
- 前記第1導電型半導体層は前記活性層の側面を基準に外方に延びることを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
- 少なくとも前記活性層と前記第2導電型半導体層の厚さに対応する深さを有するグルーブ(groove)をさらに含むことを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
- 前記グルーブは、前記活性層と前記第2導電型半導体層の周りに沿って前記第1導電型半導体層の背面の上に形成されることを特徴とする、請求項8に記載の紫外線発光素子。
- 前記第1電極層の背面は前記活性層の上面より高い位置に配置されることを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
- 前記第1導電型半導体層は前記活性層が接する中央領域と前記活性層が接しない周辺領域を含むことを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
- 前記中央領域は前記周辺領域に対して下方に突出することを特徴とする、請求項11に記載の紫外線発光素子。
- 前記活性層及び前記第2導電型半導体層の側面の1つまたは2つ以上の領域は外方に突出することを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
- 前記オーミック層の面積は、前記第1電極層の面積と同一または小さいことを特徴とする、請求項1に記載の紫外線発光素子。
- 前記発光構造物の側面上に配置される保護層をさらに含むことを特徴とする、請求項1に記載の紫外線発光素子。
- 前記第1電極層の上に配置される第1電極と、
前記第2電極層の上に配置される第2電極と、をさらに含むことを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。 - 前記第1電極は前記第1電極層より高い電気伝導度を有することを特徴とする、請求項16に記載の紫外線発光素子。
- 前記保護層は、前記第1領域に配置された前記第1導電型半導体層上に配置されることを特徴とする、請求項15に記載の紫外線発光素子。
- 前記オーミック層は前記活性層の周りに沿って前記第1導電型半導体層の背面の上に配置されることを特徴とする、請求項1に記載の紫外線発光素子。
- 前記オーミック層は前記第1電極層により囲まれることを特徴とする、請求項1に記載の紫外線発光素子。
- 前記オーミック層は前記第1導電型半導体層の側面に接することを特徴とする、請求項1に記載の紫外線発光素子。
- 前記オーミック層の幅は前記第1電極層の幅と相異することを特徴とする、請求項1に記載の紫外線発光素子。
- 前記第1電極層は前記オーミック層の側面と背面を両方ともカバーすることを特徴とする、請求項1に記載の紫外線発光素子。
- 前記第2反射層と前記活性層との間の距離は第1反射層と前記活性層との間の距離より大きいことを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
- フリップ型に構成されたことを特徴とする、請求項1乃至5のいずれか1項に記載の紫外線発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110134019 | 2011-12-13 | ||
KR10-2011-0134019 | 2011-12-13 | ||
KR1020120124003A KR101961825B1 (ko) | 2011-12-13 | 2012-11-05 | 자외선 발광 소자 |
KR10-2012-0124003 | 2012-11-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013125968A JP2013125968A (ja) | 2013-06-24 |
JP2013125968A5 JP2013125968A5 (ja) | 2015-12-24 |
JP6117541B2 true JP6117541B2 (ja) | 2017-04-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012271867A Active JP6117541B2 (ja) | 2011-12-13 | 2012-12-13 | 紫外線発光素子 |
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US (1) | US9786814B2 (ja) |
EP (1) | EP2605295A3 (ja) |
JP (1) | JP6117541B2 (ja) |
CN (1) | CN103165784B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015038957A (ja) * | 2013-07-16 | 2015-02-26 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR102099439B1 (ko) * | 2013-10-08 | 2020-04-09 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
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- 2012-12-13 JP JP2012271867A patent/JP6117541B2/ja active Active
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US9786814B2 (en) | 2017-10-10 |
US20130146920A1 (en) | 2013-06-13 |
CN103165784A (zh) | 2013-06-19 |
JP2013125968A (ja) | 2013-06-24 |
EP2605295A3 (en) | 2015-11-11 |
CN103165784B (zh) | 2017-04-12 |
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