CN1866559B - 氮化物半导体发光器件 - Google Patents
氮化物半导体发光器件 Download PDFInfo
- Publication number
- CN1866559B CN1866559B CN2006100805519A CN200610080551A CN1866559B CN 1866559 B CN1866559 B CN 1866559B CN 2006100805519 A CN2006100805519 A CN 2006100805519A CN 200610080551 A CN200610080551 A CN 200610080551A CN 1866559 B CN1866559 B CN 1866559B
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- CN
- China
- Prior art keywords
- nitride semiconductor
- layer
- type
- electrode
- type electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 87
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims description 19
- 230000007850 degeneration Effects 0.000 claims description 15
- 230000003064 anti-oxidating effect Effects 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 238000007792 addition Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010953 base metal Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050041406A KR100675220B1 (ko) | 2005-05-18 | 2005-05-18 | 질화물계 반도체 발광소자 |
KR1020050041406 | 2005-05-18 | ||
KR10-2005-0041406 | 2005-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1866559A CN1866559A (zh) | 2006-11-22 |
CN1866559B true CN1866559B (zh) | 2010-09-01 |
Family
ID=37425510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100805519A Active CN1866559B (zh) | 2005-05-18 | 2006-05-17 | 氮化物半导体发光器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060273332A1 (zh) |
JP (1) | JP5037037B2 (zh) |
KR (1) | KR100675220B1 (zh) |
CN (1) | CN1866559B (zh) |
TW (1) | TWI339446B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9484499B2 (en) * | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
CN102769085A (zh) * | 2011-05-04 | 2012-11-07 | 隆达电子股份有限公司 | 低接触阻值的半导体结构及其制作方法 |
KR102255214B1 (ko) | 2014-11-13 | 2021-05-24 | 삼성전자주식회사 | 발광 소자 |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2591781Y (zh) * | 2002-12-26 | 2003-12-10 | 炬鑫科技股份有限公司 | 氮化镓基ⅲ-ⅴ族化合物半导体led的发光装置 |
CN1527409A (zh) * | 2003-03-05 | 2004-09-08 | 中国科学院半导体研究所 | 小尺寸氮化镓基蓝、绿色发光二极管管芯的制作方法 |
CN1581519A (zh) * | 2003-08-12 | 2005-02-16 | 厦门三安电子有限公司 | 一种氮化镓系ⅲ-ⅴ族化合物发光二极管的制造方法 |
CN1585100A (zh) * | 2003-08-19 | 2005-02-23 | 精工爱普生株式会社 | 电极及其形成方法、薄膜晶体管、电子电路、显示装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
JPH10173226A (ja) * | 1996-12-06 | 1998-06-26 | Rohm Co Ltd | 半導体発光素子 |
JP3462720B2 (ja) * | 1997-07-16 | 2003-11-05 | 三洋電機株式会社 | n型窒化物半導体の電極及び前記電極を有する半導体素子並びにその製造方法 |
JP3625377B2 (ja) * | 1998-05-25 | 2005-03-02 | ローム株式会社 | 半導体発光素子 |
JP2000252230A (ja) * | 1998-12-28 | 2000-09-14 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
US6693352B1 (en) * | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
JP3912044B2 (ja) * | 2001-06-06 | 2007-05-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
KR20030089574A (ko) * | 2002-05-16 | 2003-11-22 | 시로 사카이 | 질화갈륨계 화합물 반도체 장치 |
KR101183776B1 (ko) * | 2003-08-19 | 2012-09-17 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 소자 |
KR20050035325A (ko) * | 2003-10-10 | 2005-04-18 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100550806B1 (ko) * | 2003-10-31 | 2006-02-10 | 권혁종 | 미끄럼 방지용 커버 및 그 제조장치 |
US8089093B2 (en) * | 2004-02-20 | 2012-01-03 | Nichia Corporation | Nitride semiconductor device including different concentrations of impurities |
-
2005
- 2005-05-18 KR KR1020050041406A patent/KR100675220B1/ko not_active IP Right Cessation
-
2006
- 2006-05-15 TW TW095117162A patent/TWI339446B/zh not_active IP Right Cessation
- 2006-05-17 JP JP2006137663A patent/JP5037037B2/ja not_active Expired - Fee Related
- 2006-05-17 CN CN2006100805519A patent/CN1866559B/zh active Active
- 2006-05-18 US US11/435,892 patent/US20060273332A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2591781Y (zh) * | 2002-12-26 | 2003-12-10 | 炬鑫科技股份有限公司 | 氮化镓基ⅲ-ⅴ族化合物半导体led的发光装置 |
CN1527409A (zh) * | 2003-03-05 | 2004-09-08 | 中国科学院半导体研究所 | 小尺寸氮化镓基蓝、绿色发光二极管管芯的制作方法 |
CN1581519A (zh) * | 2003-08-12 | 2005-02-16 | 厦门三安电子有限公司 | 一种氮化镓系ⅲ-ⅴ族化合物发光二极管的制造方法 |
CN1585100A (zh) * | 2003-08-19 | 2005-02-23 | 精工爱普生株式会社 | 电极及其形成方法、薄膜晶体管、电子电路、显示装置 |
Non-Patent Citations (1)
Title |
---|
JP特开平9-219539A 1997.08.19 |
Also Published As
Publication number | Publication date |
---|---|
CN1866559A (zh) | 2006-11-22 |
TW200723565A (en) | 2007-06-16 |
TWI339446B (en) | 2011-03-21 |
JP5037037B2 (ja) | 2012-09-26 |
KR100675220B1 (ko) | 2007-01-29 |
US20060273332A1 (en) | 2006-12-07 |
KR20060118946A (ko) | 2006-11-24 |
JP2006324668A (ja) | 2006-11-30 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100826 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100826 Address after: Gyeonggi Do, South Korea Applicant after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung Electro-Mechanics Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121211 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121211 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung LED Co., Ltd. |