KR101272423B1 - 화상 감지 디바이스 및 카메라 - Google Patents

화상 감지 디바이스 및 카메라 Download PDF

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Publication number
KR101272423B1
KR101272423B1 KR1020117020034A KR20117020034A KR101272423B1 KR 101272423 B1 KR101272423 B1 KR 101272423B1 KR 1020117020034 A KR1020117020034 A KR 1020117020034A KR 20117020034 A KR20117020034 A KR 20117020034A KR 101272423 B1 KR101272423 B1 KR 101272423B1
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South Korea
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pmos transistor
type
transistor
amplifying
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KR20110107868A (ko
Inventor
다까노리 와따나베
미네오 시모쯔사
다께시 이찌가와
하지메 이께다
야스히로 세끼네
아끼라 오오따니
다께시 고지마
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020117020034A 2009-02-06 2010-01-20 화상 감지 디바이스 및 카메라 Expired - Fee Related KR101272423B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2009-026699 2009-02-06
JP2009026699 2009-02-06
JP2009293211A JP2010206172A (ja) 2009-02-06 2009-12-24 撮像装置およびカメラ
JPJP-P-2009-293211 2009-12-24
PCT/JP2010/050998 WO2010090104A1 (en) 2009-02-06 2010-01-20 Image sensing device and camera

Publications (2)

Publication Number Publication Date
KR20110107868A KR20110107868A (ko) 2011-10-04
KR101272423B1 true KR101272423B1 (ko) 2013-06-07

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KR1020117020034A Expired - Fee Related KR101272423B1 (ko) 2009-02-06 2010-01-20 화상 감지 디바이스 및 카메라

Country Status (6)

Country Link
US (1) US8482646B2 (enExample)
EP (1) EP2394301A1 (enExample)
JP (1) JP2010206172A (enExample)
KR (1) KR101272423B1 (enExample)
CN (1) CN102301477B (enExample)
WO (1) WO2010090104A1 (enExample)

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JP6889571B2 (ja) * 2017-02-24 2021-06-18 キヤノン株式会社 撮像装置および撮像システム
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Publication number Publication date
US8482646B2 (en) 2013-07-09
CN102301477A (zh) 2011-12-28
CN102301477B (zh) 2014-04-02
US20110242388A1 (en) 2011-10-06
KR20110107868A (ko) 2011-10-04
WO2010090104A1 (en) 2010-08-12
JP2010206172A (ja) 2010-09-16
EP2394301A1 (en) 2011-12-14

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