KR101253064B1 - 규소 함유 생성물을 제조하기 위한 조성물 및 방법 - Google Patents

규소 함유 생성물을 제조하기 위한 조성물 및 방법 Download PDF

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KR101253064B1
KR101253064B1 KR1020067023757A KR20067023757A KR101253064B1 KR 101253064 B1 KR101253064 B1 KR 101253064B1 KR 1020067023757 A KR1020067023757 A KR 1020067023757A KR 20067023757 A KR20067023757 A KR 20067023757A KR 101253064 B1 KR101253064 B1 KR 101253064B1
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carbon
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silica product
silica
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KR20070001269A (ko
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노만 디. 힌만
찰스 이. 와이만
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시 옵션스, 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0685—Preparation by carboreductive nitridation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/16—Pore diameter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S502/00—Catalyst, solid sorbent, or support therefor: product or process of making
    • Y10S502/506—Method of making inorganic composition utilizing organic compound, except formic, acetic, or oxalic acid or salt thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S502/00—Catalyst, solid sorbent, or support therefor: product or process of making
    • Y10S502/506—Method of making inorganic composition utilizing organic compound, except formic, acetic, or oxalic acid or salt thereof
    • Y10S502/507—Synthetic resin, natural resin, polysaccaride, or polypeptide

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020067023757A 2004-04-13 2005-04-12 규소 함유 생성물을 제조하기 위한 조성물 및 방법 Expired - Fee Related KR101253064B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/822,924 2004-04-13
US10/822,924 US7588745B2 (en) 2004-04-13 2004-04-13 Silicon-containing products
PCT/US2005/012302 WO2005099893A2 (en) 2004-04-13 2005-04-12 Composition and method for making silicon-containing products

Publications (2)

Publication Number Publication Date
KR20070001269A KR20070001269A (ko) 2007-01-03
KR101253064B1 true KR101253064B1 (ko) 2013-04-11

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Country Status (8)

Country Link
US (2) US7588745B2 (enExample)
EP (1) EP1735088A4 (enExample)
JP (2) JP5133051B2 (enExample)
KR (1) KR101253064B1 (enExample)
CN (1) CN101014533B (enExample)
AU (1) AU2005233172A1 (enExample)
BR (1) BRPI0509837A (enExample)
WO (1) WO2005099893A2 (enExample)

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US8470279B2 (en) * 2004-04-13 2013-06-25 Si Options, Llc High purity silicon-containing products and method of manufacture
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CN101785990B (zh) * 2010-02-09 2012-07-25 乐山师范学院 四氯化硅用于活性炭-二氧化硅混合吸附材料的制备
CN101746759B (zh) * 2010-02-11 2012-07-25 浙江工业大学 一种利用植物纤维合成碳化硅纳米线的方法
CN101837948B (zh) * 2010-05-05 2013-01-09 吉林大学 一种稻壳液化及综合利用的新方法
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JP6011614B2 (ja) * 2012-04-02 2016-10-19 住友電気工業株式会社 多孔質炭素材料の製造方法
CN102649047B (zh) * 2012-05-17 2014-02-19 乐山川博吸附材料有限责任公司 一种C-SiO2吸附材料的制备方法
US9862612B2 (en) 2012-06-20 2018-01-09 Sumitomo Electric Industries, Ltd. Method for producing silicon metal and porous carbon
KR102017689B1 (ko) * 2012-10-18 2019-10-21 엘지이노텍 주식회사 탄화규소 분말의 제조 방법
JP6037823B2 (ja) * 2012-12-27 2016-12-07 太平洋セメント株式会社 高純度の炭化ケイ素の製造方法
KR101484173B1 (ko) * 2013-07-23 2015-01-21 광주과학기술원 가스 저장용 나노다공성 탄소 소재 및 이의 제조방법
CN105032362A (zh) * 2015-03-05 2015-11-11 中霖中科环境科技（安徽）股份有限公司 一种对秸秆进行等离子体处理后吸附印染废水的方法
CN107200887A (zh) * 2017-06-07 2017-09-26 常州兆威不锈钢有限公司 一种覆盖胶
CN109437203B (zh) * 2018-11-09 2020-07-31 北京科技大学 一种高纯一维SiC纳米材料的制备方法
CN109279612A (zh) * 2018-11-09 2019-01-29 吉林大学 一种水热法制备活性二氧化硅/碳双相填料的方法
CN111422875B (zh) * 2020-02-25 2021-01-19 上海恒仑新能源科技有限公司 一种生物氧化亚硅的制备方法及其产物
CN112877093B (zh) * 2021-01-14 2023-12-05 长江大学 一种破乳剂、破乳剂组合物及其制备方法和应用
CN113353914B (zh) * 2021-07-13 2022-05-24 江西省矿产资源保障服务中心 一种以矿物为原料制备介孔碳的方法
CN113336233B (zh) * 2021-07-13 2022-05-13 江西省矿产资源保障服务中心 一种高纯纳米石英粉的制备方法
CN113387366B (zh) * 2021-07-13 2022-05-24 江西省矿产资源保障服务中心 一种以矿物为原料制备介孔硅的方法
CN116023947A (zh) * 2022-12-02 2023-04-28 钱卫群 一种固态氢制品及其制备方法和应用
CN115939402B (zh) * 2023-01-09 2023-05-30 天目湖先进储能技术研究院有限公司 一种硅基材料及其制备方法和在负极中的应用

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