KR101242319B1 - 하전 입자선 장치 - Google Patents

하전 입자선 장치 Download PDF

Info

Publication number
KR101242319B1
KR101242319B1 KR1020117003654A KR20117003654A KR101242319B1 KR 101242319 B1 KR101242319 B1 KR 101242319B1 KR 1020117003654 A KR1020117003654 A KR 1020117003654A KR 20117003654 A KR20117003654 A KR 20117003654A KR 101242319 B1 KR101242319 B1 KR 101242319B1
Authority
KR
South Korea
Prior art keywords
scanning
stage
charged particle
area
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117003654A
Other languages
English (en)
Korean (ko)
Other versions
KR20110036619A (ko
Inventor
다까시 히로이
야스히로 군지
히로시 미야이
마사아끼 노지리
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20110036619A publication Critical patent/KR20110036619A/ko
Application granted granted Critical
Publication of KR101242319B1 publication Critical patent/KR101242319B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • H01J37/265Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202Movement
    • H01J2237/20278Motorised movement
    • H01J2237/20285Motorised movement computer-controlled
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020117003654A 2008-09-12 2009-08-28 하전 입자선 장치 Active KR101242319B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2008-234270 2008-09-12
JP2008234270A JP5286004B2 (ja) 2008-09-12 2008-09-12 基板の検査装置、および、基板の検査方法
PCT/JP2009/004205 WO2010029700A1 (ja) 2008-09-12 2009-08-28 荷電粒子線装置

Publications (2)

Publication Number Publication Date
KR20110036619A KR20110036619A (ko) 2011-04-07
KR101242319B1 true KR101242319B1 (ko) 2013-03-11

Family

ID=42004966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117003654A Active KR101242319B1 (ko) 2008-09-12 2009-08-28 하전 입자선 장치

Country Status (4)

Country Link
US (1) US8421010B2 (enExample)
JP (1) JP5286004B2 (enExample)
KR (1) KR101242319B1 (enExample)
WO (1) WO2010029700A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011154918A (ja) * 2010-01-28 2011-08-11 Hitachi High-Technologies Corp 荷電粒子線装置
JP2011158439A (ja) * 2010-02-04 2011-08-18 Hitachi High-Technologies Corp 電子線を用いた外観検査装置
JP5722551B2 (ja) 2010-05-13 2015-05-20 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
KR20120045774A (ko) * 2010-11-01 2012-05-09 삼성전자주식회사 웨이퍼 검사 방법
JP5537448B2 (ja) * 2011-01-21 2014-07-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び画像解析装置
JP5684612B2 (ja) * 2011-03-09 2015-03-18 株式会社日立ハイテクサイエンス X線分析装置
US9208552B2 (en) * 2011-04-26 2015-12-08 Kla-Tencor Corporation Method and system for hybrid reticle inspection
US9633819B2 (en) * 2011-05-13 2017-04-25 Fibics Incorporated Microscopy imaging method and system
JP5460662B2 (ja) 2011-09-07 2014-04-02 株式会社日立ハイテクノロジーズ 領域決定装置、観察装置または検査装置、領域決定方法および領域決定方法を用いた観察方法または検査方法
JP6078234B2 (ja) * 2012-04-13 2017-02-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5948262B2 (ja) * 2013-01-30 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥観察方法および欠陥観察装置
US9536700B2 (en) * 2013-04-22 2017-01-03 Hitachi High-Technologies Corporation Sample observation device
JP6147079B2 (ja) * 2013-05-14 2017-06-14 オリンパス株式会社 顕微鏡システム、貼り合わせ領域の決定方法、及び、プログラム
CN105453242B (zh) * 2013-08-14 2017-09-22 株式会社日立制作所 半导体检查方法、半导体检查装置以及半导体元件的制造方法
JP6239633B2 (ja) 2013-09-26 2017-11-29 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6266360B2 (ja) * 2014-01-27 2018-01-24 株式会社日立ハイテクノロジーズ 画像処理装置および荷電粒子線装置
CN106199746A (zh) * 2015-05-07 2016-12-07 上海高晶影像科技有限公司 一种使现有安检机成倍提高检测速度的方法
DE112016006467B4 (de) * 2016-04-27 2021-12-02 Hitachi High-Tech Corporation Mit einem Strahl geladener Teilchen arbeitende Vorrichtung
JP6897042B2 (ja) * 2016-09-27 2021-06-30 日本電気株式会社 画像検査装置、画像検査方法および画像検査プログラム
JP2020181629A (ja) * 2017-07-27 2020-11-05 株式会社日立ハイテク 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
US11776859B2 (en) 2018-12-19 2023-10-03 Kla Corporation Care area based swath speed for throughput and sensitivity improvement
JP2021197257A (ja) * 2020-06-12 2021-12-27 株式会社日立ハイテク 荷電粒子ビーム装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080036145A (ko) * 2005-08-12 2008-04-24 가부시키가이샤 에바라 세이사꾸쇼 검출장치 및 검사장치
JP2008252085A (ja) * 2008-03-06 2008-10-16 Hitachi Ltd 荷電粒子線を用いた基板検査装置および基板検査方法
KR100960823B1 (ko) * 2007-01-18 2010-06-07 스미도모쥬기가이고교 가부시키가이샤 하전입자선 조사장치

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6107637A (en) * 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
JP4002655B2 (ja) * 1998-01-06 2007-11-07 株式会社日立製作所 パターン検査方法およびその装置
JP4035242B2 (ja) * 1998-11-30 2008-01-16 株式会社日立製作所 回路パターンの検査方法及び検査装置
US6476913B1 (en) * 1998-11-30 2002-11-05 Hitachi, Ltd. Inspection method, apparatus and system for circuit pattern
US6252412B1 (en) * 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6538249B1 (en) * 1999-07-09 2003-03-25 Hitachi, Ltd. Image-formation apparatus using charged particle beams under various focus conditions
JP2001148016A (ja) * 1999-11-22 2001-05-29 Hitachi Ltd 試料検査装置,試料表示装置、および試料表示方法
JP2001147114A (ja) * 1999-11-24 2001-05-29 Hitachi Ltd 回路パターンの検査装置、および検査方法
US20070131877A9 (en) * 1999-11-29 2007-06-14 Takashi Hiroi Pattern inspection method and system therefor
JP2002026093A (ja) * 2000-07-10 2002-01-25 Hitachi Ltd 半導体装置の製造方法
JP3951590B2 (ja) * 2000-10-27 2007-08-01 株式会社日立製作所 荷電粒子線装置
US7109483B2 (en) * 2000-11-17 2006-09-19 Ebara Corporation Method for inspecting substrate, substrate inspecting system and electron beam apparatus
JP3973372B2 (ja) * 2001-03-23 2007-09-12 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
US7361894B2 (en) * 2002-10-22 2008-04-22 Hitachi High-Technologies Corporation Method of forming a sample image and charged particle beam apparatus
EP1455378B1 (en) * 2001-11-21 2013-08-14 Hitachi High-Technologies Corporation Sample imaging method and charged particle beam system
WO2003044821A1 (en) * 2001-11-21 2003-05-30 Hitachi High-Technologies Corporation Sample imaging method and charged particle beam system
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP4154282B2 (ja) * 2003-05-14 2008-09-24 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
JP4564728B2 (ja) * 2003-07-25 2010-10-20 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
JP4564768B2 (ja) 2004-03-23 2010-10-20 株式会社日立ハイテクノロジーズ パターン検査方法及びその装置
US20060171593A1 (en) * 2005-02-01 2006-08-03 Hitachi High-Technologies Corporation Inspection apparatus for inspecting patterns of a substrate
JP4606969B2 (ja) * 2005-08-17 2011-01-05 株式会社日立ハイテクノロジーズ 写像投影型電子線式検査装置及びその方法
JP4685599B2 (ja) * 2005-11-11 2011-05-18 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
JP2007180090A (ja) * 2005-12-27 2007-07-12 Ebara Corp スループットを向上させる評価方法及び電子線装置
JP4972472B2 (ja) * 2007-06-13 2012-07-11 株式会社日立ハイテクノロジーズ 半導体検査装置
JP4922962B2 (ja) * 2008-02-14 2012-04-25 株式会社日立ハイテクノロジーズ 回路パターンの検査方法及び検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080036145A (ko) * 2005-08-12 2008-04-24 가부시키가이샤 에바라 세이사꾸쇼 검출장치 및 검사장치
KR100960823B1 (ko) * 2007-01-18 2010-06-07 스미도모쥬기가이고교 가부시키가이샤 하전입자선 조사장치
JP2008252085A (ja) * 2008-03-06 2008-10-16 Hitachi Ltd 荷電粒子線を用いた基板検査装置および基板検査方法

Also Published As

Publication number Publication date
WO2010029700A1 (ja) 2010-03-18
JP5286004B2 (ja) 2013-09-11
KR20110036619A (ko) 2011-04-07
US20110163230A1 (en) 2011-07-07
JP2010067533A (ja) 2010-03-25
US8421010B2 (en) 2013-04-16

Similar Documents

Publication Publication Date Title
KR101242319B1 (ko) 하전 입자선 장치
US7932493B2 (en) Method and system for observing a specimen using a scanning electron microscope
JP5202071B2 (ja) 荷電粒子顕微鏡装置及びそれを用いた画像処理方法
KR100310106B1 (ko) 패턴검사방법 및 그 장치
JP4919988B2 (ja) 回路パターン検査装置、および回路パターン検査方法
JP5118872B2 (ja) 半導体デバイスの欠陥観察方法及びその装置
US8853628B2 (en) Defect inspection method, and device thereof
US8509516B2 (en) Circuit pattern examining apparatus and circuit pattern examining method
US20130070078A1 (en) Method and device for testing defect using sem
JPH11108864A (ja) パターン欠陥検査方法および検査装置
JP2012150065A (ja) 回路パターン検査装置およびその検査方法
US8111902B2 (en) Method and apparatus for inspecting defects of circuit patterns
WO2010032857A1 (ja) パターンの検査装置、及びパターンの検査方法
JPH09320505A (ja) 電子線式検査方法及びその装置並びに半導体の製造方法及びその製造ライン
JP5400882B2 (ja) 半導体検査装置及びそれを用いた半導体検査方法
JPWO2011155122A1 (ja) 回路パターン検査装置およびその検査方法
KR20140044395A (ko) 결함 관찰 방법 및 결함 관찰 장치
WO2010098004A1 (ja) 欠陥観察方法および欠陥観察装置
JP2006284433A (ja) 外観検査装置及び外観検査方法
WO2011092770A1 (ja) 荷電粒子線装置
US9329034B2 (en) Pattern determination device and computer program
JP2005101619A (ja) パターン欠陥検査方法および検査装置
JP2016139531A (ja) 試料の観察、検査、測定方法、及び走査電子顕微鏡
KR102816228B1 (ko) 관찰 시스템, 관찰 방법 및 프로그램
JP2011247603A (ja) 荷電粒子線を用いた試料検査方法および検査装置ならびに欠陥レビュー装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20110217

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20120814

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20130212

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20130305

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20130305

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20160219

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20160219

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20170221

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20170221

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20180220

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20180220

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20190219

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20190219

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20200219

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20200219

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20220222

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20230222

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20240220

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20250204

Start annual number: 13

End annual number: 13