JP5286004B2 - 基板の検査装置、および、基板の検査方法 - Google Patents

基板の検査装置、および、基板の検査方法 Download PDF

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Publication number
JP5286004B2
JP5286004B2 JP2008234270A JP2008234270A JP5286004B2 JP 5286004 B2 JP5286004 B2 JP 5286004B2 JP 2008234270 A JP2008234270 A JP 2008234270A JP 2008234270 A JP2008234270 A JP 2008234270A JP 5286004 B2 JP5286004 B2 JP 5286004B2
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Japan
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stage
charged particle
particle beam
scanning
inspection
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JP2008234270A
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English (en)
Japanese (ja)
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JP2010067533A5 (enExample
JP2010067533A (ja
Inventor
高志 広井
康弘 郡司
裕史 宮井
正明 野尻
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2008234270A priority Critical patent/JP5286004B2/ja
Priority to US13/061,031 priority patent/US8421010B2/en
Priority to PCT/JP2009/004205 priority patent/WO2010029700A1/ja
Priority to KR1020117003654A priority patent/KR101242319B1/ko
Publication of JP2010067533A publication Critical patent/JP2010067533A/ja
Publication of JP2010067533A5 publication Critical patent/JP2010067533A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2008234270A 2008-09-12 2008-09-12 基板の検査装置、および、基板の検査方法 Active JP5286004B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008234270A JP5286004B2 (ja) 2008-09-12 2008-09-12 基板の検査装置、および、基板の検査方法
US13/061,031 US8421010B2 (en) 2008-09-12 2009-08-28 Charged particle beam device for scanning a sample using a charged particle beam to inspect the sample
PCT/JP2009/004205 WO2010029700A1 (ja) 2008-09-12 2009-08-28 荷電粒子線装置
KR1020117003654A KR101242319B1 (ko) 2008-09-12 2009-08-28 하전 입자선 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008234270A JP5286004B2 (ja) 2008-09-12 2008-09-12 基板の検査装置、および、基板の検査方法

Publications (3)

Publication Number Publication Date
JP2010067533A JP2010067533A (ja) 2010-03-25
JP2010067533A5 JP2010067533A5 (enExample) 2012-02-02
JP5286004B2 true JP5286004B2 (ja) 2013-09-11

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Family Applications (1)

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JP2008234270A Active JP5286004B2 (ja) 2008-09-12 2008-09-12 基板の検査装置、および、基板の検査方法

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US (1) US8421010B2 (enExample)
JP (1) JP5286004B2 (enExample)
KR (1) KR101242319B1 (enExample)
WO (1) WO2010029700A1 (enExample)

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JP2011154918A (ja) * 2010-01-28 2011-08-11 Hitachi High-Technologies Corp 荷電粒子線装置
JP2011158439A (ja) * 2010-02-04 2011-08-18 Hitachi High-Technologies Corp 電子線を用いた外観検査装置
JP5722551B2 (ja) * 2010-05-13 2015-05-20 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
KR20120045774A (ko) * 2010-11-01 2012-05-09 삼성전자주식회사 웨이퍼 검사 방법
JP5537448B2 (ja) * 2011-01-21 2014-07-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び画像解析装置
JP5684612B2 (ja) * 2011-03-09 2015-03-18 株式会社日立ハイテクサイエンス Ｘ線分析装置
US9208552B2 (en) * 2011-04-26 2015-12-08 Kla-Tencor Corporation Method and system for hybrid reticle inspection
EP2707893B1 (en) * 2011-05-13 2019-01-16 Fibics Incorporated Microscopy imaging method and system
JP5460662B2 (ja) 2011-09-07 2014-04-02 株式会社日立ハイテクノロジーズ 領域決定装置、観察装置または検査装置、領域決定方法および領域決定方法を用いた観察方法または検査方法
JP6078234B2 (ja) * 2012-04-13 2017-02-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5948262B2 (ja) * 2013-01-30 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥観察方法および欠陥観察装置
KR101709433B1 (ko) * 2013-04-22 2017-02-22 가부시키가이샤 히다치 하이테크놀로지즈 시료 관찰 장치
JP6147079B2 (ja) * 2013-05-14 2017-06-14 オリンパス株式会社 顕微鏡システム、貼り合わせ領域の決定方法、及び、プログラム
US9508611B2 (en) * 2013-08-14 2016-11-29 Hitachi, Ltd. Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
DE112014007346B4 (de) * 2013-09-26 2024-05-23 Hitachi High-Tech Corporation Mit einem Strahl geladener Teilchen arbeitende Vorrichtung
JP6266360B2 (ja) * 2014-01-27 2018-01-24 株式会社日立ハイテクノロジーズ 画像処理装置および荷電粒子線装置
CN106199746A (zh) * 2015-05-07 2016-12-07 上海高晶影像科技有限公司 一种使现有安检机成倍提高检测速度的方法
US10879037B2 (en) * 2016-04-27 2020-12-29 Hitachi High-Tech Corporation Charged particle beam device with distance setting between irradiation regions in a scan line
JP6897042B2 (ja) * 2016-09-27 2021-06-30 日本電気株式会社 画像検査装置、画像検査方法および画像検査プログラム
JP2020181629A (ja) * 2017-07-27 2020-11-05 株式会社日立ハイテク 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
US11776859B2 (en) 2018-12-19 2023-10-03 Kla Corporation Care area based swath speed for throughput and sensitivity improvement
JP2021197257A (ja) * 2020-06-12 2021-12-27 株式会社日立ハイテク 荷電粒子ビーム装置

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US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6107637A (en) * 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
JP4002655B2 (ja) * 1998-01-06 2007-11-07 株式会社日立製作所 パターン検査方法およびその装置
JP4035242B2 (ja) * 1998-11-30 2008-01-16 株式会社日立製作所 回路パターンの検査方法及び検査装置
US6476913B1 (en) * 1998-11-30 2002-11-05 Hitachi, Ltd. Inspection method, apparatus and system for circuit pattern
US6252412B1 (en) * 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6538249B1 (en) * 1999-07-09 2003-03-25 Hitachi, Ltd. Image-formation apparatus using charged particle beams under various focus conditions
JP2001148016A (ja) * 1999-11-22 2001-05-29 Hitachi Ltd 試料検査装置，試料表示装置、および試料表示方法
JP2001147114A (ja) * 1999-11-24 2001-05-29 Hitachi Ltd 回路パターンの検査装置、および検査方法
US20070131877A9 (en) * 1999-11-29 2007-06-14 Takashi Hiroi Pattern inspection method and system therefor
JP2002026093A (ja) * 2000-07-10 2002-01-25 Hitachi Ltd 半導体装置の製造方法
JP3951590B2 (ja) * 2000-10-27 2007-08-01 株式会社日立製作所 荷電粒子線装置
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JP3973372B2 (ja) * 2001-03-23 2007-09-12 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
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US7034296B2 (en) * 2001-11-21 2006-04-25 Hitachi High-Technologies Corporation Method of forming a sample image and charged particle beam apparatus
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JP4564728B2 (ja) * 2003-07-25 2010-10-20 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
JP4564768B2 (ja) 2004-03-23 2010-10-20 株式会社日立ハイテクノロジーズ パターン検査方法及びその装置
US20060171593A1 (en) * 2005-02-01 2006-08-03 Hitachi High-Technologies Corporation Inspection apparatus for inspecting patterns of a substrate
JP5403852B2 (ja) 2005-08-12 2014-01-29 株式会社荏原製作所 検出装置及び検査装置
JP4606969B2 (ja) * 2005-08-17 2011-01-05 株式会社日立ハイテクノロジーズ 写像投影型電子線式検査装置及びその方法
JP4685599B2 (ja) * 2005-11-11 2011-05-18 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
JP2007180090A (ja) * 2005-12-27 2007-07-12 Ebara Corp スループットを向上させる評価方法及び電子線装置
JP4797140B2 (ja) 2007-01-18 2011-10-19 独立行政法人国立がん研究センター 荷電粒子線照射装置
JP4972472B2 (ja) * 2007-06-13 2012-07-11 株式会社日立ハイテクノロジーズ 半導体検査装置
JP4922962B2 (ja) * 2008-02-14 2012-04-25 株式会社日立ハイテクノロジーズ 回路パターンの検査方法及び検査装置
JP4728361B2 (ja) 2008-03-06 2011-07-20 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法

Also Published As

Publication number Publication date
US20110163230A1 (en) 2011-07-07
WO2010029700A1 (ja) 2010-03-18
KR20110036619A (ko) 2011-04-07
KR101242319B1 (ko) 2013-03-11
US8421010B2 (en) 2013-04-16
JP2010067533A (ja) 2010-03-25

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