KR101116540B1 - 공-이온주입에 의한 기판의 취약한 영역의 형성 방법 - Google Patents

공-이온주입에 의한 기판의 취약한 영역의 형성 방법 Download PDF

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Publication number
KR101116540B1
KR101116540B1 KR1020057008062A KR20057008062A KR101116540B1 KR 101116540 B1 KR101116540 B1 KR 101116540B1 KR 1020057008062 A KR1020057008062 A KR 1020057008062A KR 20057008062 A KR20057008062 A KR 20057008062A KR 101116540 B1 KR101116540 B1 KR 101116540B1
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substrate
species
depth
major
thin layer
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Korean (ko)
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KR20050072793A (ko
Inventor
베르나르 아스빠
크리스텔 라가에
니꼴라 수스비
쟝-프랑스와 미쵸
Original Assignee
꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스
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Publication of KR20050072793A publication Critical patent/KR20050072793A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Moulding By Coating Moulds (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
  • Semiconductor Memories (AREA)
KR1020057008062A 2002-11-07 2003-10-31 공-이온주입에 의한 기판의 취약한 영역의 형성 방법 Expired - Lifetime KR101116540B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR02/13934 2002-11-07
FR0213934A FR2847075B1 (fr) 2002-11-07 2002-11-07 Procede de formation d'une zone fragile dans un substrat par co-implantation
PCT/FR2003/003256 WO2004044976A1 (fr) 2002-11-07 2003-10-31 Procede de formation d'une zone fragile dans un substrat par co-implantation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117007374A Division KR101174594B1 (ko) 2002-11-07 2003-10-31 공-이온주입에 의한 기판의 취약한 영역의 형성 방법

Publications (2)

Publication Number Publication Date
KR20050072793A KR20050072793A (ko) 2005-07-12
KR101116540B1 true KR101116540B1 (ko) 2012-02-28

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KR1020057008062A Expired - Lifetime KR101116540B1 (ko) 2002-11-07 2003-10-31 공-이온주입에 의한 기판의 취약한 영역의 형성 방법
KR1020117007374A Expired - Lifetime KR101174594B1 (ko) 2002-11-07 2003-10-31 공-이온주입에 의한 기판의 취약한 영역의 형성 방법

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KR1020117007374A Expired - Lifetime KR101174594B1 (ko) 2002-11-07 2003-10-31 공-이온주입에 의한 기판의 취약한 영역의 형성 방법

Country Status (11)

Country Link
US (1) US20070037363A1 (https=)
EP (1) EP1559138B1 (https=)
JP (2) JP5258146B2 (https=)
KR (2) KR101116540B1 (https=)
CN (1) CN100587940C (https=)
AT (1) ATE465514T1 (https=)
AU (1) AU2003292305A1 (https=)
DE (1) DE60332261D1 (https=)
FR (1) FR2847075B1 (https=)
TW (1) TWI323912B (https=)
WO (1) WO2004044976A1 (https=)

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FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
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JP2008513990A (ja) * 2004-09-21 2008-05-01 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ 共注入および続いて注入を行うことにより薄層を得るための方法
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
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FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
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FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2905801B1 (fr) * 2006-09-12 2008-12-05 Soitec Silicon On Insulator Procede de transfert d'une couche a haute temperature
FR2907965B1 (fr) * 2006-10-27 2009-03-06 Soitec Silicon On Insulator Procede de traitement d'un substrat donneur pour la fabrication d'un substrat.
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
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FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
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FR2949606B1 (fr) 2009-08-26 2011-10-28 Commissariat Energie Atomique Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation
US20110207306A1 (en) * 2010-02-22 2011-08-25 Sarko Cherekdjian Semiconductor structure made using improved ion implantation process
US8841742B2 (en) 2011-09-27 2014-09-23 Soitec Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
FR2981501B1 (fr) * 2011-10-17 2016-05-13 Soitec Silicon On Insulator Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associes
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US8673733B2 (en) 2011-09-27 2014-03-18 Soitec Methods of transferring layers of material in 3D integration processes and related structures and devices
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Also Published As

Publication number Publication date
EP1559138A1 (fr) 2005-08-03
ATE465514T1 (de) 2010-05-15
FR2847075B1 (fr) 2005-02-18
JP5258146B2 (ja) 2013-08-07
FR2847075A1 (fr) 2004-05-14
JP2011223011A (ja) 2011-11-04
EP1559138B1 (fr) 2010-04-21
WO2004044976A1 (fr) 2004-05-27
US20070037363A1 (en) 2007-02-15
TWI323912B (en) 2010-04-21
TW200414320A (en) 2004-08-01
AU2003292305A1 (en) 2004-06-03
CN100587940C (zh) 2010-02-03
JP2006505941A (ja) 2006-02-16
CN1708844A (zh) 2005-12-14
KR20110048584A (ko) 2011-05-11
KR20050072793A (ko) 2005-07-12
DE60332261D1 (de) 2010-06-02
KR101174594B1 (ko) 2012-08-16

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