AU2001254866A1 - Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s) - Google Patents
Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s)Info
- Publication number
- AU2001254866A1 AU2001254866A1 AU2001254866A AU5486601A AU2001254866A1 AU 2001254866 A1 AU2001254866 A1 AU 2001254866A1 AU 2001254866 A AU2001254866 A AU 2001254866A AU 5486601 A AU5486601 A AU 5486601A AU 2001254866 A1 AU2001254866 A1 AU 2001254866A1
- Authority
- AU
- Australia
- Prior art keywords
- ingot
- substrate
- semiconductor material
- thin layer
- cutting out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0005549 | 2000-04-14 | ||
FR0005549 | 2000-04-14 | ||
PCT/FR2001/001179 WO2001080308A2 (en) | 2000-04-14 | 2001-04-17 | Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s) |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001254866A1 true AU2001254866A1 (en) | 2001-10-30 |
Family
ID=8849773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001254866A Abandoned AU2001254866A1 (en) | 2000-04-14 | 2001-04-17 | Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s) |
Country Status (7)
Country | Link |
---|---|
US (2) | US6951799B2 (en) |
EP (1) | EP1273035B1 (en) |
JP (1) | JP2003531492A (en) |
KR (1) | KR100742790B1 (en) |
CN (1) | CN100337319C (en) |
AU (1) | AU2001254866A1 (en) |
WO (1) | WO2001080308A2 (en) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2773261B1 (en) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS |
FR2811807B1 (en) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | METHOD OF CUTTING A BLOCK OF MATERIAL AND FORMING A THIN FILM |
JP4659300B2 (en) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | Laser processing method and semiconductor chip manufacturing method |
FR2830983B1 (en) * | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING THIN FILMS CONTAINING MICROCOMPONENTS |
TWI326626B (en) | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
DE60335538D1 (en) | 2002-03-12 | 2011-02-10 | Hamamatsu Photonics Kk | METHOD FOR CUTTING A PROCESSED OBJECT |
ES2377521T3 (en) | 2002-03-12 | 2012-03-28 | Hamamatsu Photonics K.K. | Method to divide a substrate |
FR2847075B1 (en) * | 2002-11-07 | 2005-02-18 | Commissariat Energie Atomique | PROCESS FOR FORMING A FRAGILE ZONE IN A SUBSTRATE BY CO-IMPLANTATION |
US7176108B2 (en) * | 2002-11-07 | 2007-02-13 | Soitec Silicon On Insulator | Method of detaching a thin film at moderate temperature after co-implantation |
TWI520269B (en) | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
TWI233154B (en) | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
EP1427002B1 (en) * | 2002-12-06 | 2017-04-12 | Soitec | A method for recycling a substrate using local cutting |
FR2848336B1 (en) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING |
FR2852250B1 (en) | 2003-03-11 | 2009-07-24 | Jean Luc Jouvin | PROTECTIVE SHEATH FOR CANNULA, AN INJECTION KIT COMPRISING SUCH ANKLE AND NEEDLE EQUIPPED WITH SUCH ANKLE |
EP1609559B1 (en) * | 2003-03-12 | 2007-08-08 | Hamamatsu Photonics K. K. | Laser beam machining method |
EP1482548B1 (en) | 2003-05-26 | 2016-04-13 | Soitec | A method of manufacturing a wafer |
FR2858875B1 (en) * | 2003-08-12 | 2006-02-10 | Soitec Silicon On Insulator | METHOD FOR MAKING THIN LAYERS OF SEMICONDUCTOR MATERIAL FROM A DONOR WAFER |
US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
FR2861497B1 (en) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION |
US7772087B2 (en) * | 2003-12-19 | 2010-08-10 | Commissariat A L'energie Atomique | Method of catastrophic transfer of a thin film after co-implantation |
JP4694795B2 (en) * | 2004-05-18 | 2011-06-08 | 株式会社ディスコ | Wafer division method |
FR2880189B1 (en) * | 2004-12-24 | 2007-03-30 | Tracit Technologies Sa | METHOD FOR DEFERRING A CIRCUIT ON A MASS PLAN |
FR2886051B1 (en) | 2005-05-20 | 2007-08-10 | Commissariat Energie Atomique | METHOD FOR DETACHING THIN FILM |
US7427554B2 (en) * | 2005-08-12 | 2008-09-23 | Silicon Genesis Corporation | Manufacturing strained silicon substrates using a backing material |
FR2889887B1 (en) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | METHOD FOR DEFERING A THIN LAYER ON A SUPPORT |
FR2891281B1 (en) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A THIN FILM ELEMENT |
KR100858983B1 (en) * | 2005-11-16 | 2008-09-17 | 가부시키가이샤 덴소 | Semiconductor device and dicing method for semiconductor substrate |
FR2899378B1 (en) | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | METHOD FOR DETACHING A THIN FILM BY FUSION OF PRECIPITS |
US9362439B2 (en) * | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
FR2910179B1 (en) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE |
FR2925221B1 (en) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN LAYER |
FR2947098A1 (en) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER |
JP5839538B2 (en) * | 2011-03-17 | 2016-01-06 | リンテック株式会社 | Manufacturing method of thin semiconductor device |
RU2469433C1 (en) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions) |
US8673733B2 (en) * | 2011-09-27 | 2014-03-18 | Soitec | Methods of transferring layers of material in 3D integration processes and related structures and devices |
US8841742B2 (en) | 2011-09-27 | 2014-09-23 | Soitec | Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods |
CN103890908B (en) * | 2011-10-18 | 2016-08-24 | 富士电机株式会社 | The stripping means of the supporting substrates of solid phase bound wafer and the manufacture method of semiconductor device |
FR2993095B1 (en) * | 2012-07-03 | 2014-08-08 | Commissariat Energie Atomique | DETACHMENT OF A SILICON-FREE LAYER <100> |
US9499921B2 (en) | 2012-07-30 | 2016-11-22 | Rayton Solar Inc. | Float zone silicon wafer manufacturing system and related process |
FR3002687B1 (en) * | 2013-02-26 | 2015-03-06 | Soitec Silicon On Insulator | PROCESS FOR TREATING A STRUCTURE |
FR3007892B1 (en) * | 2013-06-27 | 2015-07-31 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN LAYER WITH THERMAL ENERGY SUPPLY TO A FRAGILIZED AREA VIA AN INDUCTIVE LAYER |
WO2015119742A1 (en) * | 2014-02-07 | 2015-08-13 | Sunedison Semiconductor Limited | Methods for preparing layered semiconductor structures |
JP5885768B2 (en) * | 2014-03-17 | 2016-03-15 | キヤノン株式会社 | Biopsy device |
FR3020175B1 (en) * | 2014-04-16 | 2016-05-13 | Soitec Silicon On Insulator | METHOD OF TRANSFERRING A USEFUL LAYER |
CN106548972B (en) | 2015-09-18 | 2019-02-26 | 胡兵 | A method of bulk semiconductor substrate is separated with functional layer thereon |
JP6444462B2 (en) * | 2017-08-03 | 2018-12-26 | キヤノン株式会社 | Biopsy device |
FR3076067B1 (en) | 2017-12-21 | 2020-01-10 | Universite De Franche-Comte | METHOD FOR MANUFACTURING ULTRA-PLANE THIN FILM COMPOSITE |
US11414782B2 (en) | 2019-01-13 | 2022-08-16 | Bing Hu | Method of separating a film from a main body of a crystalline object |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU1324525A1 (en) * | 1985-07-01 | 1992-05-30 | Научно-исследовательский институт ядерной физики при Томском политехническом институте им.С.М.Кирова | Method of treating semiconducting material |
FR2666759A1 (en) * | 1990-09-19 | 1992-03-20 | Bourgogne Technologies | Device for ablating, through the transparency of a plastic film, using a laser, and applications to spraying and to marking |
FR2681472B1 (en) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
CN1132223C (en) * | 1995-10-06 | 2003-12-24 | 佳能株式会社 | Semiconductor substrate and producing method thereof |
IT1282722B1 (en) * | 1996-03-01 | 1998-03-31 | Pirelli | METHOD AND APPARATUS FOR THE CLEANING OF VULCANIZATION MOLDS OF ELASTOMERIC MATERIAL ARTICLES |
FR2748851B1 (en) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A THIN FILM OF SEMICONDUCTOR MATERIAL |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6162705A (en) | 1997-05-12 | 2000-12-19 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
SG87916A1 (en) | 1997-12-26 | 2002-04-16 | Canon Kk | Sample separating apparatus and method, and substrate manufacturing method |
US6503321B2 (en) | 1998-02-17 | 2003-01-07 | The Trustees Of Columbia University In The City Of New York | Slicing of single-crystal films using ion implantation |
JP3809733B2 (en) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | Thin film transistor peeling method |
JP3697106B2 (en) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | Method for manufacturing semiconductor substrate and method for manufacturing semiconductor thin film |
FR2785217B1 (en) | 1998-10-30 | 2001-01-19 | Soitec Silicon On Insulator | METHOD AND DEVICE FOR SEPARATING IN A TWO WAFERS A PLATE OF MATERIAL, PARTICULARLY A SEMICONDUCTOR |
-
2001
- 2001-04-17 EP EP01927984A patent/EP1273035B1/en not_active Expired - Lifetime
- 2001-04-17 JP JP2001577603A patent/JP2003531492A/en active Pending
- 2001-04-17 CN CNB018092756A patent/CN100337319C/en not_active Expired - Lifetime
- 2001-04-17 WO PCT/FR2001/001179 patent/WO2001080308A2/en active Application Filing
- 2001-04-17 AU AU2001254866A patent/AU2001254866A1/en not_active Abandoned
- 2001-04-17 KR KR1020027013794A patent/KR100742790B1/en active IP Right Grant
-
2002
- 2002-10-11 US US10/268,776 patent/US6951799B2/en not_active Expired - Lifetime
-
2005
- 2005-06-01 US US11/140,910 patent/US7169686B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20030162367A1 (en) | 2003-08-28 |
KR100742790B1 (en) | 2007-07-25 |
EP1273035B1 (en) | 2012-09-12 |
US6951799B2 (en) | 2005-10-04 |
WO2001080308A2 (en) | 2001-10-25 |
US7169686B2 (en) | 2007-01-30 |
CN100337319C (en) | 2007-09-12 |
US20050227456A1 (en) | 2005-10-13 |
WO2001080308A3 (en) | 2002-02-07 |
JP2003531492A (en) | 2003-10-21 |
CN1428005A (en) | 2003-07-02 |
KR20030022108A (en) | 2003-03-15 |
EP1273035A2 (en) | 2003-01-08 |
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