AU2001279746A1 - Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates - Google Patents

Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

Info

Publication number
AU2001279746A1
AU2001279746A1 AU2001279746A AU7974601A AU2001279746A1 AU 2001279746 A1 AU2001279746 A1 AU 2001279746A1 AU 2001279746 A AU2001279746 A AU 2001279746A AU 7974601 A AU7974601 A AU 7974601A AU 2001279746 A1 AU2001279746 A1 AU 2001279746A1
Authority
AU
Australia
Prior art keywords
crystalline
deposition
substrates
layers
crystalline layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001279746A
Inventor
Holger Jurgensen
Johannes Kappeler
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2001279746A1 publication Critical patent/AU2001279746A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
AU2001279746A 2000-09-01 2001-07-13 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates Abandoned AU2001279746A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10043601A DE10043601A1 (en) 2000-09-01 2000-09-01 Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10043601 2000-09-01
PCT/EP2001/008105 WO2002018680A1 (en) 2000-09-01 2001-07-13 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

Publications (1)

Publication Number Publication Date
AU2001279746A1 true AU2001279746A1 (en) 2002-03-13

Family

ID=7654975

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001279746A Abandoned AU2001279746A1 (en) 2000-09-01 2001-07-13 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

Country Status (7)

Country Link
US (1) US7147718B2 (en)
EP (1) EP1313897B1 (en)
JP (1) JP4587640B2 (en)
AU (1) AU2001279746A1 (en)
DE (2) DE10043601A1 (en)
TW (1) TWI256422B (en)
WO (1) WO2002018680A1 (en)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10043599A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on one or more, in particular likewise, crystalline substrates
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
DE10247921A1 (en) * 2002-10-10 2004-04-22 Aixtron Ag Hydride vapor phase epitaxy reactor, to produce pseudo-substrates for electronic components, deposits layers of crystalline substrates from a gas phase with increased growth rates
DE102004009130A1 (en) 2004-02-25 2005-09-15 Aixtron Ag Inlet system for a MOCVD reactor
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
ITMI20050962A1 (en) * 2005-05-25 2006-11-26 Lpe Spa DEVICE TO TAKE REACTION GAS IN A REACTION CHAMBER AND EPITAXIAL REACTOR THAT USES IT
JP4519037B2 (en) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 Heating device and coating / developing device
DE102005055468A1 (en) * 2005-11-22 2007-05-24 Aixtron Ag Coating one or more substrates comprises supplying gases to process chamber via chambers with gas outlet openings
DE102006018515A1 (en) * 2006-04-21 2007-10-25 Aixtron Ag CVD reactor with lowerable process chamber ceiling
DE102007009145A1 (en) * 2007-02-24 2008-08-28 Aixtron Ag Device for depositing crystalline layers optionally by means of MOCVD or HVPE
ITMI20071075A1 (en) * 2007-05-28 2008-11-29 Lpe Spa REACTOR FOR GROWTH OF CRYSTALS WITH COOLED INPUTS
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
WO2009049020A2 (en) 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8021487B2 (en) * 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
US8187381B2 (en) * 2008-08-22 2012-05-29 Applied Materials, Inc. Process gas delivery for semiconductor process chamber
US8568529B2 (en) 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8138069B2 (en) * 2009-04-24 2012-03-20 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group III depositions
US20100297347A1 (en) * 2009-04-24 2010-11-25 Applied Materials, Inc. Substrate support having side gas outlets and methods
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
DE102009043960A1 (en) 2009-09-08 2011-03-10 Aixtron Ag CVD reactor
JP5409413B2 (en) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 III-nitride semiconductor vapor phase growth system
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
CN102465280B (en) * 2010-11-04 2013-11-27 上海蓝光科技有限公司 Double-side growth type MOCVD reactor
KR101843609B1 (en) 2011-03-04 2018-05-14 노벨러스 시스템즈, 인코포레이티드 Hybrid ceramic showerhead
TWI534291B (en) 2011-03-18 2016-05-21 應用材料股份有限公司 Showerhead assembly
DE102011056538A1 (en) 2011-12-16 2013-06-20 Aixtron Se Method for removing unwanted residues of process chamber of chemical vapor deposition reactor, involves forming non-volatile intermediate, so that surface coverage degree of residue is increased/decreased at respective phases of cycle
DE102012104475A1 (en) * 2012-05-24 2013-11-28 Aixtron Se Device useful for depositing layer on substrate comprises processing chamber having susceptor heated by heating device for receiving substrate, gas inlet element, gas outlet element and gas-tight reactor housing which is outwardly arranged
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
TWI657164B (en) * 2012-07-25 2019-04-21 應用材料股份有限公司 Process gas flow guides for large area plasma enhanced chemical vapor deposition systems and methods
TWI473903B (en) 2013-02-23 2015-02-21 Hermes Epitek Corp Gas Injector and Cover Plate Assembly for Semiconductor Equipment
USD756502S1 (en) 2013-07-23 2016-05-17 Applied Materials, Inc. Gas diffuser assembly
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10403474B2 (en) 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
TWI649446B (en) * 2017-03-15 2019-02-01 漢民科技股份有限公司 Detachable gas injectorused for semiconductor equipment
DE102019117479A1 (en) 2019-06-28 2020-12-31 Aixtron Se Flat component that can be used in a CVD reactor
JP7325345B2 (en) * 2020-01-15 2023-08-14 東京エレクトロン株式会社 Substrate processing equipment
DE102020107518A1 (en) 2020-03-18 2021-09-23 Aixtron Se Method for determining the end of a cleaning process for the process chamber of a MOCVD reactor
CN116288279B (en) * 2023-05-23 2023-08-18 中微半导体设备(上海)股份有限公司 Vapor deposition device and substrate processing method
CN117684262A (en) * 2024-02-04 2024-03-12 楚赟精工科技(上海)有限公司 Gas injection device and gas phase reaction equipment

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device
JPS6110767A (en) 1984-06-26 1986-01-18 Mitsubishi Heavy Ind Ltd Pipe inspecting device
JPS61110767A (en) * 1984-10-31 1986-05-29 Fujitsu Ltd Cvd device
JPS61135114A (en) * 1984-12-06 1986-06-23 Toshiba Corp Vapor growth device
JPS63227011A (en) * 1987-03-17 1988-09-21 Fujitsu Ltd Chemical vapor deposition system
JPS63238319A (en) * 1987-03-26 1988-10-04 Kuwabara Seisakusho:Kk Burner for use in radiation furnace
JPS63260124A (en) * 1987-04-17 1988-10-27 Nippon Telegr & Teleph Corp <Ntt> Vapor growth apparatus
JPS6425541A (en) * 1987-07-22 1989-01-27 Daiwa Handotai Sochi Kk Vertical cvd reaction apparatus
JPS6479097A (en) * 1987-09-21 1989-03-24 Sumitomo Electric Industries Compound semiconductor vapor growth device
FR2628984B1 (en) * 1988-03-22 1990-12-28 Labo Electronique Physique PLANETARY EPITAXY REACTOR
US5106453A (en) * 1990-01-29 1992-04-21 At&T Bell Laboratories MOCVD method and apparatus
JP2875341B2 (en) * 1990-05-23 1999-03-31 沖電気工業株式会社 Plasma CVD equipment
JPH04132213A (en) * 1990-09-25 1992-05-06 Furukawa Electric Co Ltd:The Vapor phase growth apparatus of semiconductor thin film
JPH04142729A (en) * 1990-10-03 1992-05-15 Furukawa Electric Co Ltd:The Semiconductor thin film vapor growth device
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
JP3414475B2 (en) * 1994-02-25 2003-06-09 スタンレー電気株式会社 Crystal growth equipment
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JPH0945624A (en) * 1995-07-27 1997-02-14 Tokyo Electron Ltd Leaf-type heat treating system
TW509985B (en) * 1996-05-10 2002-11-11 Sumitomo Chemical Co Device for production of compound semiconductor
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
US5954881A (en) * 1997-01-28 1999-09-21 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
EP1060301B1 (en) * 1998-02-24 2003-01-22 Aixtron AG Ceiling arrangement for an epitaxial growth reactor
JPH11329980A (en) * 1998-05-20 1999-11-30 Furukawa Electric Co Ltd:The Organic metallic gaseous phase growing device and method therefor using the same
EP0978487A3 (en) * 1998-08-07 2001-02-21 Corning Incorporated Sealed, nozzle-mix burners for silica deposition
DE19855637A1 (en) * 1998-12-02 2000-06-15 Aixtron Ag Process and system for semiconductor crystal production with temperature management
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
KR100709801B1 (en) * 1999-11-17 2007-04-23 동경 엘렉트론 주식회사 Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
WO2001046498A2 (en) * 1999-12-22 2001-06-28 Aixtron Ag Chemical vapor deposition reactor and process chamber for said reactor
TW492041B (en) * 2000-02-14 2002-06-21 Tokyo Electron Ltd Method and device for attenuating harmonics in semiconductor plasma processing systems
KR100332313B1 (en) * 2000-06-24 2002-04-12 서성기 Apparatus and method for depositing thin film on wafer
DE10043600B4 (en) * 2000-09-01 2013-12-05 Aixtron Se Device for depositing in particular crystalline layers on one or more, in particular also crystalline substrates
DE10043599A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on one or more, in particular likewise, crystalline substrates
DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10043597A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on, in particular, crystalline substrates
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
DE10064944A1 (en) * 2000-09-22 2002-04-11 Aixtron Ag Process for depositing crystalline layers in particular, gas inlet element and device for carrying out the process
DE10057134A1 (en) * 2000-11-17 2002-05-23 Aixtron Ag Process for depositing crystalline layers onto crystalline substrates in a process chamber of a CVD reactor comprises adjusting the kinematic viscosity of the carrier gas mixed
DE10118130A1 (en) * 2001-04-11 2002-10-17 Aixtron Ag Device for depositing crystalline layers on crystalline substrates in the gas phase comprises a heated reaction chamber with substrate holders arranged in a circular manner on a support, heated sources, and a hydride feed line
DE10133914A1 (en) * 2001-07-12 2003-01-23 Aixtron Ag Apparatus to deposit crystalline layers on semiconductor wafers comprises rotating wafer holders mounted on rotating mounting forming floor of process chamber whose roof contains central gas inlet
DE10163394A1 (en) * 2001-12-21 2003-07-03 Aixtron Ag Method and device for depositing crystalline layers and on crystalline substrates
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
US7524532B2 (en) * 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
DE10320836A1 (en) * 2003-05-08 2004-12-02 Takata Corp. Belt retractor and belt retractor spring cassette housing for a belt retractor

Also Published As

Publication number Publication date
WO2002018680A1 (en) 2002-03-07
DE50111816D1 (en) 2007-02-15
JP4587640B2 (en) 2010-11-24
EP1313897A1 (en) 2003-05-28
TWI256422B (en) 2006-06-11
EP1313897B1 (en) 2007-01-03
US7147718B2 (en) 2006-12-12
JP2004507898A (en) 2004-03-11
US20040005731A1 (en) 2004-01-08
DE10043601A1 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
AU2001279746A1 (en) Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
AU2002366860A1 (en) Method and device for depositing crystalline layers on crystalline substrates
AU2002214372A1 (en) Thin film resonator and method for manufacturing the same
EP1173047A4 (en) Composite substrate, thin-film light-emitting device comprising the same, and method for producing the same
AU2001256755A1 (en) Biosensor and method for manufacturing the same
AU2001277755A1 (en) Device and method for processing substrate
AU2001241479A1 (en) Method and apparatus for depositing films
AU6594200A (en) Polishing compound for chemimechanical polishing and method for polishing substrate
AU2002300573A1 (en) Photovoltaic Device and Method for Preparing the Same
AU2002303333A1 (en) Systems and methods for epitaxially depositing films
AU2001241144A1 (en) Substrate with photocatalytic film and method for producing the same
AU782917C (en) Cell division inhibitors and process for producing the same
AU2003252444A1 (en) Method and device for polishing substrate
AU2002220666A1 (en) Method for depositing especially, crystalline layers and device for carrying out the method
HK1060158A1 (en) A method of depositing a thin film on a substrate,a substrate and a diamond film produced by the me thod
AU2002300570A1 (en) Photovoltaic Device and Method for Preparing the Same
EP1182271B8 (en) Apparatus and method for coating substrate
AU4875601A (en) Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same
AU2002225663A1 (en) Methods and systems for positioning substrates
AU2001247512A1 (en) Method and structure for producing flat wafer chucks
AU2003215669A1 (en) Method for coating a substrate and device for carrying out the method
AU2003210353A1 (en) Substrate, especially textile substrate, and method for producing the same
AU6035000A (en) Semiconductor and manufacturing method for semiconductor
AU2003208860A1 (en) Method and device for depositing semi-conductor layers
AU2001285834A1 (en) Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates