AU4481100A - Treatment method of cleaved film for the manufacture of substrates - Google Patents

Treatment method of cleaved film for the manufacture of substrates

Info

Publication number
AU4481100A
AU4481100A AU44811/00A AU4481100A AU4481100A AU 4481100 A AU4481100 A AU 4481100A AU 44811/00 A AU44811/00 A AU 44811/00A AU 4481100 A AU4481100 A AU 4481100A AU 4481100 A AU4481100 A AU 4481100A
Authority
AU
Australia
Prior art keywords
substrates
manufacture
treatment method
cleaved film
cleaved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU44811/00A
Inventor
Sien G. Kang
Igor J. Malik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Genesis Corp
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/295,858 external-priority patent/US6171965B1/en
Priority claimed from US09/295,822 external-priority patent/US6204151B1/en
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of AU4481100A publication Critical patent/AU4481100A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Element Separation (AREA)
AU44811/00A 1999-04-21 2000-04-20 Treatment method of cleaved film for the manufacture of substrates Abandoned AU4481100A (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US13034299P 1999-04-21 1999-04-21
US09/295,858 US6171965B1 (en) 1999-04-21 1999-04-21 Treatment method of cleaved film for the manufacture of substrates
US09295858 1999-04-21
US60130342 1999-04-21
US09/295,822 US6204151B1 (en) 1999-04-21 1999-04-21 Smoothing method for cleaved films made using thermal treatment
US09295822 1999-04-21
US36420999A 1999-07-30 1999-07-30
US09364209 1999-07-30
PCT/US2000/010821 WO2000063965A1 (en) 1999-04-21 2000-04-20 Treatment method of cleaved film for the manufacture of substrates

Publications (1)

Publication Number Publication Date
AU4481100A true AU4481100A (en) 2000-11-02

Family

ID=27494853

Family Applications (1)

Application Number Title Priority Date Filing Date
AU44811/00A Abandoned AU4481100A (en) 1999-04-21 2000-04-20 Treatment method of cleaved film for the manufacture of substrates

Country Status (2)

Country Link
AU (1) AU4481100A (en)
WO (1) WO2000063965A1 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (en) 1997-12-30 2000-01-28 Commissariat Energie Atomique METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS
FR2811807B1 (en) * 2000-07-12 2003-07-04 Commissariat Energie Atomique METHOD OF CUTTING A BLOCK OF MATERIAL AND FORMING A THIN FILM
US6420243B1 (en) * 2000-12-04 2002-07-16 Motorola, Inc. Method for producing SOI wafers by delamination
JP4803884B2 (en) 2001-01-31 2011-10-26 キヤノン株式会社 Method for manufacturing thin film semiconductor device
FR2823596B1 (en) 2001-04-13 2004-08-20 Commissariat Energie Atomique SUBSTRATE OR DISMOUNTABLE STRUCTURE AND METHOD OF MAKING SAME
FR2823599B1 (en) 2001-04-13 2004-12-17 Commissariat Energie Atomique DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING
FR2830983B1 (en) 2001-10-11 2004-05-14 Commissariat Energie Atomique METHOD FOR MANUFACTURING THIN FILMS CONTAINING MICROCOMPONENTS
WO2004034453A1 (en) * 2002-10-04 2004-04-22 Silicon Genesis Corporation Method for treating semiconductor material
FR2847075B1 (en) * 2002-11-07 2005-02-18 Commissariat Energie Atomique PROCESS FOR FORMING A FRAGILE ZONE IN A SUBSTRATE BY CO-IMPLANTATION
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (en) 2002-12-09 2005-10-28 Commissariat Energie Atomique METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING
FR2856844B1 (en) 2003-06-24 2006-02-17 Commissariat Energie Atomique HIGH PERFORMANCE CHIP INTEGRATED CIRCUIT
FR2857953B1 (en) 2003-07-21 2006-01-13 Commissariat Energie Atomique STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME
FR2861497B1 (en) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
US7390724B2 (en) 2004-04-12 2008-06-24 Silicon Genesis Corporation Method and system for lattice space engineering
US7094666B2 (en) 2004-07-29 2006-08-22 Silicon Genesis Corporation Method and system for fabricating strained layers for the manufacture of integrated circuits
FR2886051B1 (en) 2005-05-20 2007-08-10 Commissariat Energie Atomique METHOD FOR DETACHING THIN FILM
FR2889887B1 (en) 2005-08-16 2007-11-09 Commissariat Energie Atomique METHOD FOR DEFERING A THIN LAYER ON A SUPPORT
FR2891281B1 (en) 2005-09-28 2007-12-28 Commissariat Energie Atomique METHOD FOR MANUFACTURING A THIN FILM ELEMENT
JP5041714B2 (en) * 2006-03-13 2012-10-03 信越化学工業株式会社 Microchip and SOI substrate for microchip manufacturing
FR2899378B1 (en) 2006-03-29 2008-06-27 Commissariat Energie Atomique METHOD FOR DETACHING A THIN FILM BY FUSION OF PRECIPITS
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
FR2910179B1 (en) 2006-12-19 2009-03-13 Commissariat Energie Atomique METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE
FR2925221B1 (en) 2007-12-17 2010-02-19 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN LAYER
EP2157602A1 (en) * 2008-08-20 2010-02-24 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of manufacturing a plurality of fabrication wafers
JP2010278338A (en) * 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd Sos substrate low in defect density in proximity of interface
FR2947098A1 (en) 2009-06-18 2010-12-24 Commissariat Energie Atomique METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER
FR2977075A1 (en) * 2011-06-23 2012-12-28 Soitec Silicon On Insulator METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964957A (en) * 1973-12-19 1976-06-22 Monsanto Company Apparatus for processing semiconductor wafers
JPS5861763A (en) * 1981-10-09 1983-04-12 武笠　均 Feel sensor fire fighting apparatus
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
JPH08271880A (en) * 1995-04-03 1996-10-18 Toshiba Corp Light shielding film, liquid crystal display device and material for forming light shielding film

Also Published As

Publication number Publication date
WO2000063965A1 (en) 2000-10-26

Similar Documents

Publication Publication Date Title
AU4481100A (en) Treatment method of cleaved film for the manufacture of substrates
AU3246701A (en) Method and apparatus for the treatment of substrates
AU2301699A (en) System for the treatment of wafers
EP1109208A3 (en) Method for the formation of semiconductor layer
AU4179300A (en) Improved method for treatment of surfaces with ultraviolet light
AU5005700A (en) Method for the manufacture of toothpaste
AU2003269048A1 (en) Installation for the vacuum treatment of substrates
AU5599900A (en) Process for coating olefinic substrates
AU7902400A (en) Method for the preparation of 5-carboxyphthalide
AU2001235577A1 (en) Method for surface treatment of polymeric substrates
AU2003258551A1 (en) Method for the treatment of fiber material
AU4973799A (en) Methods for plasma modification of substrates
AU7750100A (en) Method for the treatment of obesity
AU2376001A (en) Method for the manufacture of olefins
AU6869700A (en) Hygroscopic antifogging film and process for producing the same
AU5831500A (en) Process for the preparation of polyols
AU3378099A (en) Process for the production of fluorocarbons
AU5976000A (en) Process for the manufacture of moldings
EP0928814A3 (en) Process for the manufacture of dioxazine compounds
AU1130901A (en) Method for the preparation of 5-carboxyphthalide
AU4598400A (en) Method of treatment
AU5174699A (en) Apparatus and method for the production of disinfectant
AU6837300A (en) Method for the production of phosphonomethylglycine
AU2446500A (en) Sterile substrate and process for producing it
AU2382601A (en) Novel method of treatment

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase