FR2905801B1 - Procede de transfert d'une couche a haute temperature - Google Patents

Procede de transfert d'une couche a haute temperature

Info

Publication number
FR2905801B1
FR2905801B1 FR0653685A FR0653685A FR2905801B1 FR 2905801 B1 FR2905801 B1 FR 2905801B1 FR 0653685 A FR0653685 A FR 0653685A FR 0653685 A FR0653685 A FR 0653685A FR 2905801 B1 FR2905801 B1 FR 2905801B1
Authority
FR
France
Prior art keywords
transferring
high temperature
temperature layer
layer
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0653685A
Other languages
English (en)
Other versions
FR2905801A1 (fr
Inventor
Xavier Hebras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0653685A priority Critical patent/FR2905801B1/fr
Priority to US11/621,838 priority patent/US20080064182A1/en
Priority to PCT/FR2007/051903 priority patent/WO2008031980A1/fr
Priority to TW096134093A priority patent/TW200822193A/zh
Publication of FR2905801A1 publication Critical patent/FR2905801A1/fr
Application granted granted Critical
Publication of FR2905801B1 publication Critical patent/FR2905801B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
FR0653685A 2006-09-12 2006-09-12 Procede de transfert d'une couche a haute temperature Expired - Fee Related FR2905801B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0653685A FR2905801B1 (fr) 2006-09-12 2006-09-12 Procede de transfert d'une couche a haute temperature
US11/621,838 US20080064182A1 (en) 2006-09-12 2007-01-10 Process for high temperature layer transfer
PCT/FR2007/051903 WO2008031980A1 (fr) 2006-09-12 2007-09-11 Procede de transfert d'une couche a haute temperature
TW096134093A TW200822193A (en) 2006-09-12 2007-09-12 Process for high temperature layer transfer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0653685A FR2905801B1 (fr) 2006-09-12 2006-09-12 Procede de transfert d'une couche a haute temperature

Publications (2)

Publication Number Publication Date
FR2905801A1 FR2905801A1 (fr) 2008-03-14
FR2905801B1 true FR2905801B1 (fr) 2008-12-05

Family

ID=38051808

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0653685A Expired - Fee Related FR2905801B1 (fr) 2006-09-12 2006-09-12 Procede de transfert d'une couche a haute temperature

Country Status (4)

Country Link
US (1) US20080064182A1 (fr)
FR (1) FR2905801B1 (fr)
TW (1) TW200822193A (fr)
WO (1) WO2008031980A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2938118B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de fabrication d'un empilement de couches minces semi-conductrices
US8513090B2 (en) * 2009-07-16 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate, and semiconductor device
US8148237B2 (en) * 2009-08-07 2012-04-03 Varian Semiconductor Equipment Associates, Inc. Pressurized treatment of substrates to enhance cleaving process
FR2961948B1 (fr) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator Procede de traitement d'une piece en materiau compose
FR2968121B1 (fr) * 2010-11-30 2012-12-21 Soitec Silicon On Insulator Procede de transfert d'une couche a haute temperature
WO2013126927A2 (fr) * 2012-02-26 2013-08-29 Solexel, Inc. Systèmes et procédés pour une division par laser et un transfert de couche de dispositif
FR3009887B1 (fr) 2013-08-20 2015-09-25 Commissariat Energie Atomique Procede ameliore de separation entre une zone active d'un substrat et sa face arriere ou une portion de sa face arriere
FR3029538B1 (fr) 2014-12-04 2019-04-26 Soitec Procede de transfert de couche
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
JP6632462B2 (ja) * 2016-04-28 2020-01-22 信越化学工業株式会社 複合ウェーハの製造方法
US11152251B2 (en) * 2017-07-31 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device having via formed by ion beam
FR3076069B1 (fr) * 2017-12-22 2021-11-26 Commissariat Energie Atomique Procede de transfert d'une couche utile
FR3076070B1 (fr) * 2017-12-22 2019-12-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile
FR3077924B1 (fr) * 2018-02-13 2020-01-17 Soitec Structure demontable et procede de demontage utilisant ladite structure
FR3091620B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
CN112967982B (zh) * 2020-09-10 2022-04-19 重庆康佳光电技术研究院有限公司 转移基板及制作方法、芯片转移方法及显示面板
US11955374B2 (en) * 2021-08-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming SOI substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JPH11233449A (ja) * 1998-02-13 1999-08-27 Denso Corp 半導体基板の製造方法
FR2874455B1 (fr) * 2004-08-19 2008-02-08 Soitec Silicon On Insulator Traitement thermique avant collage de deux plaquettes
FR2839385B1 (fr) * 2002-05-02 2004-07-23 Soitec Silicon On Insulator Procede de decollement de couches de materiau
US7459025B2 (en) * 2002-06-03 2008-12-02 Tien-Hsi Lee Methods for transferring a layer onto a substrate
US6995075B1 (en) * 2002-07-12 2006-02-07 Silicon Wafer Technologies Process for forming a fragile layer inside of a single crystalline substrate
WO2004010481A1 (fr) * 2002-07-24 2004-01-29 William Carr Procede de fabrication d'un substrat multicouche comprenant une couche cristalline mince
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US20040262686A1 (en) * 2003-06-26 2004-12-30 Mohamad Shaheen Layer transfer technique
JP2005085964A (ja) * 2003-09-08 2005-03-31 Sumitomo Mitsubishi Silicon Corp 貼り合わせ基板の製造方法
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers

Also Published As

Publication number Publication date
FR2905801A1 (fr) 2008-03-14
TW200822193A (en) 2008-05-16
US20080064182A1 (en) 2008-03-13
WO2008031980A1 (fr) 2008-03-20

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100531