200822193 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於將一層自施體基板移轉至接收基 板上用於為電子應用、微電子應用及光電子應用製造諸如 SeOI型結構（"絕緣體上半導體π)之異質結構的方法。 4 【先前技術】 -一種經由層移轉來產生異質結構之熟知技術為Smart Cut™技術。在文件US 5 374 564中或在由A.J· Auberton-Herv6等人之標題為"Why can Smart-Cut Change the Future of Micro el ectronics?n(Int. Journal of High Speed Electronics and Systems，第 10卷，第 1號，2000年，第 131 頁至第146頁）之文章中特別描述了 Smart Cut™技術之應用 實例。此技術使用以下步驟： a) 以氫或稀有氣體型（例如，氫及/或氦）之輕離子轟擊施 體基板表面（例如，以矽製成），以在基板中植入足夠濃度 之此等離子，植入區域在分裂退火期間允許經由形成微腔 I 或片晶來產生斷裂層， b) 使施體基板之此表面與接收基板緊密地接觸（接合）’ -及 _ c)分裂退火，其經由在由植入物質形成之微腔或片晶中 的晶體重排及壓力效應而在植入層處造成斷裂或分裂以獲 得由移轉施體基板至接收基板上所產生的異質結構。 然而，如此獲得之異質結構不僅在移轉層表面上而且在 形成異質結構之層的界面處具有缺陷。 123137.doc 200822193 在將層移轉至接收基板上之後可出現不同類型之表面缺 fe 此專缺陷包括：表面粗縫、未經移轉之區域（ντα)、 氣泡、空隙、cov型空隙（晶體定向空隙）等。 此荨缺卩曰具有各種原因，諸如不良移轉、結構之各層中 下伏缺陷之存在、界面處接合品質或僅僅必須實施以製造 該4結構之不同步驟（植入物質、熱處理等）。200822193 IX. Description of the Invention: [Technical Field] The present invention relates to a method for transferring a layer from a donor substrate to a receiving substrate for manufacturing a structure such as a SeOI type for electronic applications, microelectronic applications, and optoelectronic applications ( "Semiconductor π) heterostructure structure method. 4 [Prior Art] - A well-known technique for generating heterostructures via layer transfer is the Smart CutTM technology. In the document US 5 374 564 or in the title by AJ Auberton-Herv6 et al. "Why can Smart-Cut Change the Future of Microelectronics?n (Int. Journal of High Speed Electronics and Systems, Volume 10) In the article, No. 1, 2000, pages 131 to 146, an application example of Smart CutTM technology is specifically described. This technique uses the following steps: a) bombarding the surface of the donor substrate (eg, made of tantalum) with light ions of hydrogen or a rare gas type (eg, hydrogen and/or helium) to implant a sufficient concentration in the substrate Plasma, the implanted region allows the formation of a fracture layer via the formation of microcavity I or platelets during split annealing, b) the surface of the donor substrate is in intimate contact (bonded) with the receiving substrate '- and _ c) split annealing, It causes breakage or splitting at the implant layer via crystal rearrangement and pressure effects in microcavities or platelets formed by the implant material to obtain a heterostructure resulting from the transfer of the donor substrate to the receiving substrate. However, the heterostructure thus obtained has defects not only on the surface of the transfer layer but also at the interface of the layer forming the heterostructure. 123137.doc 200822193 Different types of surface defects can occur after moving the layer onto the receiving substrate. This special defect includes: rough surface, unshifted areas (ντα), bubbles, voids, cov-type voids (crystals) Oriented voids, etc. This defect has various causes, such as poor transfer, the presence of underlying defects in the various layers of the structure, the bonding quality at the interface, or only the different steps (implant material, heat treatment, etc.) that must be performed to fabricate the structure.
\ 為克服此等問題，已發展各種技術，諸如低溫退火（在 文件US 2006/0040470中特定描述）、致能在界面處增加接 合月b且導致待移轉層分離而具有少數缺陷的電漿處理。已 知在移轉時，在施體基板與接收基板之間的接合能愈大， 所得異質結構中缺陷愈少。戶斤發展t諸如電裝處理表面或 待接合之表面的解決方案使得有可能增加接合能，同時限 制經施加來達成分層之熱處理溫度以限制污染物擴散。 類似地，在文件JP 2005085964中，尋求藉由使用氦植 入步驟且接著在800 C至110〇°C範圍内之高溫下應用分裂 退火而在分裂待移轉層之前來增強接合能。 方法意欲在移轉層已經 文件US 6 756 286中報導之另一 为裂之後改良其表面狀況 其由以下組成：形成一包涵層 以限制衍生自植人之氣體物f，以藉由減少植人劑量及加 熱排程而減小分離層表面粗糙度。 最終，在文件US 6 828 216中，提出以兩個階段來應用 分裂退火，第-階段使得有可能使用利代至則^之近似 標準範圍來達成待移轉層的起始分裂；第二階段允許以 至_。(：範圍内之最終退火溫度來使分裂完成以獲得 123137.doc 200822193 良好品質之表面狀況。 然而，此等目前技術並不適用於所有SeOI型（絕緣體上 半導體）異質結構，且尤其不適用於含有薄絕緣氧化物層 (UTBOX超薄埋入式氧化物層π)之彼等異質結構或甚至不 含有任何氧化物層之異質結構，例如DSB型異質結構（”直 接矽接合。 對於此類型之異質結構（氧化物層薄或不存在），擴散物 質（例如’氣體）並未經捕集於氧化物層之厚度中且可為異 質結構内眾多缺陷的原因。 【發明内容】 為克服以上引用之缺點，本發明提出一種解決方案，其 在施體基板與接收基板之間移轉層時，致能接合能在待移 轉層之間得以增強且由此限制所得異質結構中之缺陷。 為此目的，本發明關於一種將層自施體基板移轉至接收 基板上之方法，其包含： a) —離子植入步驟，其在施體基板中植入至少一物質意 欲形成微腔或片晶層， b) —接合步驟，其藉由分子接合而將施體基板表面與接 收基板接合， c) 一分層步驟’其在高溫下藉由形成於施體基板中之微 腔或片晶層分裂而使與接收基板接觸之層分離， 其特徵在於其亦包含施體基板之處理步驟以捕集步驟a) 期間植入物質的原子直至步驟c)期間達到釋放溫度，以在 低於釋放溫度時阻斷或限制微腔或片晶在施體基板中形 123137.doc 200822193 成因忒處：步驟可在步驟a)之前或之後被執行。 因此，藉由插入一處理步驟以捕集植入物質之原子，本 發明方法使得有可能產生植人物質之新的反應賴，以延 遲/寺移轉層的分離。意欲形成斷裂層且使得待移轉層在分 裂退火_分離之植人原子係經臨時㈣，且僅在施加高 釋/皿度時釋放以形成微腔或片晶。如以下所解釋，已發 見μ度愈回，愈增強接合力。當使用高於通常用於分裂退 火操作之溫度的溫度時，此增強甚至更大。 八^列如）對於矽，捕集處理係經選擇以需要高於通常用於 刀火之，皿度的釋放溫度，亦即至少高於之溫 度。因此’藉由釋放在高於Μ分裂之常見溫度之溫度下 &成刀4的原子’該等原子僅在分離待移轉之層及高於具 有車又大接合能之溫度時發揮其作用，使得有可能獲得具有 較少缺陷之異質結構。 根據本發明之第—方法，用以捕集植人物質之處理步驟 係藉由在施體基板中插人能夠與在步驟a)_植入之物質 反應之至少一離子物質的方式進行。 因此，藉由在該兩種物質之間設立接合及/或相互作 :，反應性物質將與用於分裂之物質形成穩定錯合物。接 著延遲能夠引起分裂之植人原子的發展，只要其未自穩定 錯合物釋放。為將其自彼等反應性物質中分離，必須在高 於常見溫度之溫度下（在大約55(rc與綱。c之間）應用熱處 理以在斷裂層處引起分裂。在分裂待移轉層期間應用較高 溫度使得有可能增強接合能且由此限制移轉後缺陷之產 123137.doc 200822193 生。 根據本發明之一態樣，藉由在施體基板中植入離子來達 成能夠與步驟a)期間植入之物質反應的一或多種離子物質 之插入。能夠與步驟a)期間植入之物質反應的物質詳言之 可自氟、氮及碳中選出。 根據本發明之另一態樣，能夠與在步驟a)期間植入之物 質反應的一或多種離子物質之插入係藉由在施體基板中形 成一摻雜層的方式進行，此層較佳係埋入於基板中。可藉 由離子植入來沈積或形成此層。詳言之可藉由電漿化學氣 相沈積（PCVD)或藉由低壓化學氣相澱積（LPCVD)來進行摻 雜層之沈積。對於以矽製成之施體基板，該層係經碳、 棚、磷、砷、銦或鎵摻雜。大體而言，摻雜物係就待處理 之施體基板類型而選擇。 根據本發明之第二方法，用以捕集植入物質之處理步驟 係藉由在施體基板中形成缺陷來達成。此形成係藉由在施 體基板中插入離子物質的方式進行，例如藉由氦離子植入 的方式進行，該植入之後係接著進行熱處理以在經氦植入 之區域中形成空腔。 如此形成之空腔將捕集用於後續分層之植入原子直至高 於常見分裂溫度之釋放溫度，以使待移轉層的分離將在接 合能經增強之較高溫度下發生，此溫度介於大約55〇。〇與 800°C之間。 可以在10 keV與150 keV之間的植入能及υοΜ原子/〇瓜2 與5·1〇17原子/cm2之間的植入劑量來進行氦離子植入。形 123137.doc -10- 200822193 成空腔之熱處理可在斗⑼它與⑺㈧它之間的溫度下進行， 歷時一段介於30分鐘與1000分鐘間之時間。 根據本發明之一態樣，施體基板以半導體材料製成。詳 吕之，其可為矽基板或鍺基板，或矽_鍺基板，或氮化鎵 基板，或砷化鎵基板，或碳化矽基板。其亦可為絕緣材料 或鐵磁性、壓電及/或熱電材料（例如，Al2〇3、UTa〇3)。 視情況，較佳預先處理施體基板之接合表面及接收基板 之接合表面以使其呈疏水性，接合能之增強在疏水接合之 情況下更大。 【實施方式】 本發明應用於任何層移轉方法，該方法使用施體基板之 至少一離子植入以藉由一斷裂平面來定界待移轉層、將經 植入之施體基板接合至一接收基板上，且如Sniart (:加復技 術中在高溫下應用被稱為分裂退火之熱處理以自施體基板 分離待移轉層。 本發明之原理由以下組成：增加在植入層中形成及發展 微腔或片晶所需之分裂退火溫度，以在施體基板中引起破 裂來增加施體基板與接收基板之間的界面處之接合能。 通常，SmartCutTM技術中用於矽型基板之分裂退火在 400°C與500°C之間的溫度範圍進行歷時一段確定時間（溫度 /時間對對應於用於分裂退火之加熱排程）。 在 Q.Y. Tong及 U. G6sele之著作，，Semiconductor wafer bonding: Science and technology 丨，(The ElectrochemicalIn order to overcome these problems, various techniques have been developed, such as low temperature annealing (specifically described in document US 2006/0040470), plasmas that enable the addition of a bonding b at the interface and result in separation of the layers to be transferred with few defects. deal with. It is known that the greater the bonding energy between the donor substrate and the receiving substrate at the time of transfer, the less the defects in the resulting heterostructure. The development of a solution such as an electrical surface or a surface to be joined makes it possible to increase the bonding energy while limiting the heat treatment temperature applied to achieve delamination to limit the diffusion of contaminants. Similarly, in document JP 2005085964, it is sought to enhance the bonding energy by splitting the layer to be transferred by applying a helium implantation step and then applying a split annealing at a high temperature in the range of 800 C to 110 °C. The method is intended to improve the surface condition after the transfer layer has been reported as another crack in the document US 6 756 286 which consists of forming a culvert to limit the gas f derived from the implanted person by reducing the implant The surface roughness of the separation layer is reduced by the dose and heating schedule. Finally, in document US Pat. No. 6,828,216, it is proposed to apply split annealing in two stages, the first stage making it possible to use the approximate standard range of Lidai to ^ to achieve the initial splitting of the layer to be transferred; Allow until _. (The final annealing temperature in the range is such that the splitting is completed to obtain a good quality surface condition. However, these current techniques are not applicable to all SeOI type (semiconductor-on-insulator) heterostructures, and are particularly unsuitable for Heterostructures containing a thin insulating oxide layer (UTBOX ultra-thin buried oxide layer π) or even a heterostructure without any oxide layer, such as a DSB type heterostructure ("direct tantalum bonding. For this type Heterostructures (thin or absence of oxide layers), diffusion materials (eg, 'gases') are not trapped in the thickness of the oxide layer and can be the cause of numerous defects in the heterostructure. [Invention] To overcome the above references Disadvantages of the present invention provide a solution for enabling bonding between the substrate to be transferred and the substrate to be transferred, thereby enhancing the defects between the layers to be transferred and thereby limiting defects in the resulting heterostructure. To this end, the present invention is directed to a method of transferring a layer from a donor substrate to a receiving substrate, comprising: a) an ion implantation step, which is applied Implanting at least one substance in the substrate is intended to form a microcavity or a seed layer, b) a bonding step of bonding the surface of the donor substrate to the receiving substrate by molecular bonding, c) a layering step 'which is borrowed at high temperatures Separating the layer in contact with the receiving substrate by splitting the microcavity or platelet layer formed in the donor substrate, characterized in that it also comprises a processing step of the donor substrate to capture atoms of the implanted material during step a) until The release temperature is reached during step c) to block or limit the formation of microcavities or platelets in the donor substrate below the release temperature. The steps may be performed before or after step a). Thus, by inserting a processing step to capture the atoms of the implanted material, the method of the present invention makes it possible to generate a new reaction of the implanted material to delay the separation of the metamorphic layer. It is intended to form a fracture layer and allow The transfer layer is split-annealed-separated by the implanted atomic system via temporary (4) and released only when a high release/dish is applied to form a microcavity or platelet. As explained below, it has been found that the μ degree is more and more Enhanced joint force This enhancement is even greater when using temperatures higher than those typically used for split annealing operations. For example, for trapping, the trapping process is selected to require a higher than normal for knife fire. The release temperature, that is, at least above the temperature. Therefore, 'by releasing the atom of the knife 4 at a temperature higher than the common temperature at which the crucible splits, the atoms are only separated from the layer to be transferred and higher than It has the effect of having a temperature at which the vehicle has a large junction energy, making it possible to obtain a heterostructure having fewer defects. According to the first method of the present invention, the processing step for trapping the implanted material is performed on the donor substrate. The intervening can be carried out in a manner that reacts with at least one ionic species in the step a) implanted material. Thus, by establishing a bond between the two materials and/or interacting with each other: the reactive species will be used together The substance that divides forms a stable complex. Subsequent delays can cause the development of splitting implanted atoms as long as they are not self-stabilizing. In order to separate them from their reactive species, heat treatment must be applied at temperatures above the usual temperature (between about 55 (rc and c.c) to cause splitting at the fracture layer. The application of a higher temperature during the period makes it possible to enhance the bonding energy and thereby limit the production of defects after the transfer. According to one aspect of the invention, the ability and steps can be achieved by implanting ions in the donor substrate. a) Insertion of one or more ionic species that are reacted during the implantation of the substance. Substances which are capable of reacting with the substances implanted during step a) are specifically selected from the group consisting of fluorine, nitrogen and carbon. According to another aspect of the invention, the insertion of one or more ionic species capable of reacting with the substance implanted during step a) is carried out by forming a doped layer in the donor substrate, preferably a layer It is embedded in the substrate. This layer can be deposited or formed by ion implantation. In particular, the deposition of the doped layer can be carried out by plasma chemical vapor deposition (PCVD) or by low pressure chemical vapor deposition (LPCVD). For a donor substrate made of tantalum, the layer is doped with carbon, shed, phosphorus, arsenic, indium or gallium. In general, the dopant system is selected for the type of donor substrate to be treated. According to the second method of the present invention, the processing step for trapping the implant material is achieved by forming a defect in the donor substrate. This formation is carried out by inserting an ionic substance into the donor substrate, for example by means of erbium ion implantation, which is followed by a heat treatment to form a cavity in the region where the ruthenium is implanted. The cavity thus formed will trap the implanted atoms for subsequent stratification up to a release temperature above the common splitting temperature so that the separation of the layer to be transferred will occur at a higher temperature at which the junction energy is enhanced, this temperature Between about 55 〇. 〇 between 800 °C. Ion implantation can be performed at an implantation dose between 10 keV and 150 keV and an implantation dose between υοΜ atoms/〇瓜2 and 5.1 〇17 atoms/cm2. Shape 123137.doc -10- 200822193 The heat treatment of the cavity can be carried out at a temperature between the bucket (9) and (7) (eight) for a period of between 30 minutes and 1000 minutes. According to one aspect of the invention, the donor substrate is made of a semiconductor material. In detail, it may be a germanium substrate or a germanium substrate, or a germanium germanium substrate, or a gallium nitride substrate, or a gallium arsenide substrate, or a tantalum carbide substrate. It can also be an insulating material or a ferromagnetic, piezoelectric and/or thermoelectric material (for example, Al2〇3, UTa〇3). Optionally, the bonding surface of the donor substrate and the bonding surface of the receiving substrate are preferably pretreated to be hydrophobic, and the bonding energy is enhanced in the case of hydrophobic bonding. [Embodiment] The present invention is applied to any layer transfer method using at least one ion implantation of a donor substrate to delimit a layer to be transferred by a fracture plane, and to bond the implanted donor substrate to On a receiving substrate, and applying a heat treatment called split annealing at a high temperature in Sniart (the additive technique) to separate the layer to be transferred from the donor substrate. The principle of the present invention consists of: adding in the implant layer Forming and developing the split annealing temperature required for the microcavity or platelet to cause cracking in the donor substrate to increase the bonding energy at the interface between the donor substrate and the receiving substrate. Typically, the SmartCutTM technology is used for the germanium substrate. The split annealing is performed over a temperature range between 400 ° C and 500 ° C for a determined period of time (temperature/time pairs correspond to the heating schedule for split annealing). In the work of QY Tong and U. G6sele, Semiconductor Wafer bonding: Science and technology 丨,(The Electrochemical
Society, Pennington，NJ，1999年，第 117頁至第 118頁）中， 123137.doc -11 - 200822193 量測了與溫度相關之接合能變化。由此著作之作者獲得之 結果以圖1給出，圖1為藉由疏水接合（曲線A)或親水接合 (曲線B)裝配之矽基板展示兩個矽基板之間與溫度相關之 接合能變化， 參看圖1，確定： 對於親水接合而言，接合界面處之能量自2〇〇。〇向前穩 定於約1250 mK/m2，接著在高於80(TC時迅速增加，同時 對於疏水接合而言，接合能隨溫度指數增加。 因此，藉由在分裂期間增加熱處理溫度，在層移轉時可 增強接合能，從而使得有可能獲得具有少數缺陷之層的分 離。 參看圖2A至圖2E及圖3，描述根據本發明之一實施例用 於移轉層之方法。 在此實施例中，起始基板或施體i基板1由經二氧化矽 (Si〇2)絕緣層2(其藉由熱氧化而獲得且具有大約3〇〇人之厚 度）塗覆之羊晶碎晶圓組成。 在反應性物質之第一所謂植入步驟（步驟S1)期間，經由 包含Si〇2層2之晶圓的平坦表面7，晶圓i經受原子之離子 轟擊10。根據本發明，植入原子為自對用於後續植入期間 來達成層分裂的物質具有高反應性之物質中選出的原子。 藉由實例，對於SmartCutTM技術，通常以氫原子來執行導 致分裂之植人。在此情況下，可使用a、氮或碳原子來進 行反應性物質之植人，詳言之，已知該等物f對氫具有高 反應性。 123137.doc -12- 200822193 只例中，認為對於分 晶ϋ，0 A a ^入y驟以氫原子植入施體 日日圓 且對於反應性物皙始 圓。 ' 勿貝植入步驟卩氟原子植入施體晶 :反:]生物質:直入步驟期間，以8〇 Μ與以〇 Μ之間 旦二能及51G"原子“2與2·1015原子W之間的植入劑 里來植入氟原子。計算此劑 d里以避免在植入期間晶圓之任 2非:"化。以此等植入條件，有可能在晶《Μ之確定深度 產生氟原子集聚層3(圖2 A)。 選擇植人劑量以使在層3中㈣子濃度足以在施體晶圓 内產生辅助缺陷層，其能夠臨時捕集（亦即，直至一特定 溫度）隨後在分裂植入步驟期間植入之氫原子。亦選擇植 入劑量及能量’以使層3反應性物質位於鄰近氯將於意欲 為後續分裂形成斷裂層之植入步驟期間經植入的區域之區 域中。 以氟植入，所形成之辅助缺陷可（例如）為空腔、{113》型 缺陷、錯Μ，其將允許隨後植入之氫藉由在氣原子與氯 原子之間形成穩定錯合物（諸如H_F鍵）而保留。 類似地，使用碳原子或氮原子而進行之植入導致在施體 晶圓中形成辅助缺陷，且將允許經由形成穩定錯合物（諸 如C_H鍵或N-H鍵）來捕集隨後植入之氫原子。 一旦元成反應性物質植入，即實施通常執行之植入步驟 以達成層自施體晶圓的分裂（步驟S2，圖2B)。 亦可在分裂植入步驟之後進行反應性物質植入步驟（步 驟 sr)〇 123137.doc -13- 200822193 在此分裂植入步驟期間，晶圓1經受H+氫離子之離子轟 擊20。（例如）以20 keV與250 keV之間的植入能及大約 3·1〇16原子/cm2 至 6·1〇16原子/Cm2，較佳 5.5.1016 原子/cm2 的 植入劑量來進行H+離子植入。選擇植入劑量，以使H+離子 /辰度足以在後績熱處理步驟期間形成及發展微腔或片晶 層，該後續熱處理步驟首先在晶圓i之上部區域中定界一 薄膜或薄層4，且其次對應於晶圓丨之剩餘部分在晶圓的下 部區域定界一部分5。 大多數植入H+離子經捕集於層3處，與存在於層3缺陷中 之氟原子形成穩定錯合物。接著延遲造成分裂之微腔或片 晶的形成/發展，只要植入氫不可用於加壓微腔及片晶。 接著將施體晶圓丨分子接合於一接收晶圓6(例如石夕晶 圓）上（步驟S3，圖2C)。已熟知分子接合之原理且不需更 詳細描述其。㈣分子接合係基㈣個表面之直接接觸， 亦即’不使用任何特定材料（膠、蠟、低炫金屬等），在該 兩個表面之間的引力充分高以引起分子 ： 兩個表面之原子或分子之間的電子相互作用之所 = [Van Der Waals力]誘發的接合）。 如上圖1所指示般，接合能隨溫度 离私壯评a之~因於 同於一特定溫度時兩個接觸表面間 拿告^ 大夕數鍵為共價鍵之 …’如圖1中所指示般’當接合為疏水接合時，亦 ’拱《之曰曰囫表面已預先製為疏水性時入 步隨溫度（詳古之冥於以〇。厂、工以 按。此進一 晶圓、而增加。（例如）可藉由將兩個 日日®汉〉貝於HF(氫氟酸）化學清洗浴 使侍兩個矽晶圓表 123137.doc -14· 200822193 面為疏水性的。施體晶圓丨及接收晶圓6之各別接合表面7 及8因此較佳在接合之前接受處理而使其呈疏水性。 在接合步驟之後，藉由應用導致晶圓在H+離子植入區域 處分裂之熱處理或分裂退火，進行使層4自晶圓丨分裂之分 裂步驟（步驟S4，圖2D)。 然而，與用於矽晶圓中分裂退火之加熱排程中通常所遇 到的溫度（通常介於400。(：與500°C之間的溫度）相反，在此 情況下’由於藉由氟來捕集氫，故用於分裂之加熱排程的 溫度必須較高。需要應用高加熱排程（亦即，具有高於 500 C之溫度）以使所形成之錯合物分離（H_F鍵斷裂），而留 下植入氫可用於將引起分裂之微腔/片晶的形成與發展。 在氫已與穩定錯合物分離之後，氫僅在熱處理效應下可發 揮作為分裂物質之作用。因為氫僅在高於通常用以引起分 裂之溫度的溫度下被釋放，故亦在高於常用溫度之溫度 (超過500°C之溫度）下產生用於在待移轉層與施體晶圓之剩 餘部分之間造成分裂的效應（在微腔/片晶中之晶體重排及 壓力效應）。因此，在接合能大於分裂熱處理通常所遇到 之溫度的溫度下，發生待移轉層的分裂，從而使得有可能 最小化接合界面處之缺陷，以減少及甚至消除擴散物質且 猎此獲得具較好品質之移轉層。 接著進行習知拋光步驟（化學-機械拋光）以移除干擾層且 減小移轉層4之破裂表面9的粗糙度（步驟S5，圖2E)。亦可 藉由選擇性化學侵蝕（蝕刻）來移除干擾層，視情況接著拋 光以改良表面粗糙度。亦可在氫及/或氬下單獨進行或結 123137.doc -15- 200822193 合拋光進行熱處理。 根據實施例之一變體，可茲+ 士 篮 了猎由在施體晶圓中形成一摻雜 層來達成在晶圓中插入能夠與植入物質反應以形成如上所 述之穩定錯合物的一或多種離子物質。可藉由離子植入來 沈積或形成此層。亦可使用(例如)PCVD(電漿化學氣相沈 積）或LPCVD(低壓化學氣相沉積）來執行#雜層的沈積。對 於以矽製成之施體晶圓，該層係經碳、硼、磷、砷、銦或 鎵摻雜。大體而言，摻雜物係就待處理之施體晶圓類型而 ί ' 選擇。 圖4Α至圖4F及圖5說明根據本發明之層移轉方法的另一 實施例。此實施不同於先前所述的實施之處在於，替代經 由形成穩定錯合物捕集一或多種植入分裂物質，而在分裂 植入步驟之前於預先形成之空腔中捕集此等物質。 起始基板11為經二氧化矽（8丨〇2)層12(其藉由熱氧化而獲 得且具有大約300Α之厚度）塗覆之單晶矽晶圓。 气 在第一植入步驟（步驟S10)期間，經由包含si〇2層11之晶 圓11的平坦面17，晶圓11首先經受氦離子He之離子轟擊 30。以10 keV與150 keV之間，此處較佳50 keV的植入能 及1.10原子/cm2與5.1017原子/cm2之間，在此情況下較佳 5·1016原子/cm2的植入劑量來進行He離子植入。以此等植 入條件，有可能在晶圓11之確定深度產生仏離子集聚層 13(圖 4A) 〇 根據本發明，接著進行熱處理以允許呈空腔形式之缺陷 在He離子集聚層13處發展及/或形成（步驟S2〇，圖4B)。此 123137.doc -16- 200822193 等空腔將形成儲集層以臨時捕集在以下步驟期間植入之分 裂物質。涵蓋450°C至1000°C之溫度範圍，在此情況下較 佳600°C，進行熱處理歷時一段介於30分鐘至1〇〇〇分鐘之 間的時間，在此情況下較佳1小時。 圖6展示以大約50 keV之植入能及大約11〇16原子/cm2之 植入劑量進行氦植入接著在6〇(TC熱處理i小時之後於石夕晶 圓中形成之空腔。 關於植入類型（物質、植入能/劑量）（用來為分層形成斷 裂層）而確定在形成捕集空腔期間之植入條件及加熱排 程，以促進最大捕集反應。因此，視待執行之用於分裂的 植入類型而定，製造小空腔/捕集儲集層之厚層，或製造 具有較大空腔/捕集儲集層之較薄層。藉由實例，圖7展示 包合一厚層（亦即，約2〇〇 nm)之矽晶圓，該厚層含有在以 、’勺50 keV之植入能及約51〇i6原子/cm2之植入劑量執行氦 植入接著在600°C進行熱處理，歷時丨小時之後獲得的眾多 ^ ^ 此層之厚度及空腔大小尤其適於捕集以大約3 0 keV的植入能及大約5·51〇16原子/cm2之植入劑量來植入的 氣離子。 一旦完成形成捕集空腔，即執行常見之植入步驟以使層 自施體晶圓分裂（步驟S3〇,圖4C)。在此植入步驟中，晶 圓11經m離子之離子a擊4G。在所考慮之實例中，以 (例曰如）大約30 keV之植入能及大約551〇10原子/⑽2之植入 J里來進行Η離子植入。選擇植入劑量，以使矿離子濃度 足以在後縯熱處理步驟期間形成及發展微腔或片晶層，該 123137.doc -17- 200822193 後續熱處理步驟首先在晶圓丨丨之上部區域中定界一薄層或 薄膜14 ’且其次對應於晶圓丨丨之剩餘部分在晶圓的下部區 域中定界一部分15。 因為經植入之H+離子可易於將其自身容納於先前產生的 捕集空腔中或周圍，故大多數植入#離子經捕集於層13 處。圖8展示矽晶圓之一區域，其已為後續分裂而經受氫 離子植入，以約30 keV之植入能及約ι·ι〇16原子/cm2之植 入劑量來進行該氫離子植入，且該氫離子植入係在藉由以 約50 keV之能量及約11〇i6原子/cm2之植入劑量來植入氦 接著在600°C進行熱處理，歷時丨小時而形成之空腔線的形 成之後進行。應注意，氫離子經捕集於空腔中及之間。 接著將施體晶圓11分子接合於一接收基板上，例如矽晶 圓（步驟S40 ’圖4D)。較佳在接合之前預先處理施體晶圓 11及接收晶圓16之各別接合表面17及18以使其呈疏水性。 在接合步驟之後，藉由應用導致晶圓在H+離子植入層處 分裂之分裂熱處理而將層14自晶圓U分離（步驟S5〇，圖 4E)。 然而’與用於矽型晶圓分裂退火之加熱排程中通常所遇 溫度（通常介於400。(：與500°C之間的溫度）不同，在此情況 下，用於分裂之加熱排程的溫度必須較高以釋放經捕集於 二Jk中之氮萬要應用強加熱排程（亦即，具有高於5〇〇。〇 之溫度）來使植入氫可用於造成分裂之微腔/片晶的形成與 發展，使彳寸有可能在分裂時增強接合能。因為氫僅在高於 通常用以引起分裂之溫度的溫度下經釋放，故亦在高於常 123137.doc -18- 200822193 用溫度之溫度（高於5〇〇。〇之溫度）下產生用於在待移轉層與 施體晶圓之剩餘部分之間造成分層的效應（在微腔/片晶中 之晶體重排及壓力效應）。因此，在接合能強於分裂熱處 理通常所遇之溫度的溫度下發生待移轉層的分裂，從而允 許接合界面處之缺陷最小化，且減少及甚至消除擴散物質 且藉此獲得具較好品質之移轉層。 接著進行習知抛光步驟（機械_化學抛光）以消除干擾層且 減小移轉層14之破裂表面19的粗糙度（步驟S6〇，圖4F)。 亦可藉由選擇性化學侵蝕（蝕刻）來移除干擾層，視情況接 著拋光以改良表面粗糙度及/或在氫及/或氬下熱處理。 藉由增加在植入施體晶圓中引起破裂所需之溫度，本發 明方法致能接合能在分裂時增強且允許在所得異質結構中 之缺陷最小化。本發明方法尤其有利於製造以〇1型（絕緣 體上半導體）異質結構，尤其是含有薄絕緣氧化物層 (UTBOX :超薄埋入式氧化物層）之彼等異質結構或甚至不 含有任何氧化物層之異質結構，諸如DSB型異質結構（直接 矽接合）。 經植入之分裂物質的暫時性捕集修改脫氣流動速率。藉 由在分裂前於晶圓中保留最大量氣體，相應地減少對接^ 界面品質”有害”之流。 【圖式簡單說明】 圖1展示與溫度有關之接合能的變化， 圖2A至圖2E為展示根據本發明之一實施例之以層移轉的 示意性橫截面圖， 123137.doc -19- 200822193 圖3為指示在圖2A至圖2E中所實施之步驟的流程圖， 圖4A至圖4F為展示根據本發明之另一實施例之Si層移轉 的示意性橫截面圖， 圖5為圖4A至圖4F中所進行之步驟的流程圖， 圖6展示在氦植入及熱處理之後Si基板中空腔的形成， 圖7展示在氦植入及熱處理之後形成於Si基板中之小空 腔厚層， 圖8展示一層，其中植入於Si基板中之氫離子經捕集於 在氦植入及熱處理之後形成的空腔之間及周圍。 【主要元件符號說明】 1 施體晶圓/起始基板或施體基板 2 二氧化矽（Si〇2)絕緣層 3 氟原子集聚層 4 薄膜或層 5 部分 6 接收晶圓/接收基板 7 表面 8 表面 9 破裂表面 10 離子轟擊 11 起始基板/施體晶圓 12 二氧化矽（Si02)層 13 He離子集聚層 14 薄層或薄膜 123137.doc -20- 200822193 15 部分 16 接收晶圓 17 表面 18 表面 19 破裂表面 20 離子轟擊 30 離子轟擊 40 離子轟擊 123137.doc -21-In Society, Pennington, NJ, 1999, pp. 117-118, 123137.doc -11 - 200822193 measured temperature-dependent bond energy changes. The results obtained by the authors of this work are given in Figure 1, which shows that the tantalum substrate assembled by hydrophobic bonding (curve A) or hydrophilic bonding (curve B) exhibits temperature-dependent bonding energy changes between two germanium substrates. Referring to Figure 1, it is determined that for hydrophilic bonding, the energy at the joint interface is from 2 〇〇. The enthalpy is stabilized at about 1250 mK/m2, and then increases rapidly above 80 (TC), while for hydrophobic joints, the bonding energy increases with temperature index. Therefore, by increasing the heat treatment temperature during splitting, the layer shift The bonding energy can be enhanced in turn, thereby making it possible to obtain separation of layers having a few defects. Referring to Figures 2A to 2E and Figure 3, a method for transferring layers in accordance with an embodiment of the present invention is described. The starting substrate or the donor substrate 1 is made of a cerium crystal wafer coated with a cerium oxide (Si 2 ) insulating layer 2 (which is obtained by thermal oxidation and has a thickness of about 3 Å). During the first so-called implantation step of the reactive species (step S1), the wafer i is subjected to atomic bombardment 10 via a flat surface 7 comprising a wafer of Si 2 layer 2. According to the invention, the implant An atom is an atom selected from substances that are highly reactive for substances that are used to achieve stratification during subsequent implantation. By way of example, for SmartCutTM technology, a person who causes a split is usually performed with a hydrogen atom. Under, you can use a, Or a carbon atom to carry out the implantation of a reactive substance, in detail, it is known that the substance f has high reactivity with hydrogen. 123137.doc -12- 200822193 In the example, it is considered that for the crystallization enthalpy, 0 A a ^ Into the y, the hydrogen atom is implanted into the donor day and the starting point is rounded for the reactants. 'Dobe implantation step 卩 fluorine atom implantation donor crystal: reverse:] biomass: during the straight step, 8〇Μ and氟 〇Μ 旦 能 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 "化. With this implantation condition, it is possible to produce a fluorine atom accumulation layer 3 at the determined depth of the crystal (Fig. 2A). Select the implant dose so that the (4) sub-concentration in layer 3 is sufficient in the donor wafer. An auxiliary defect layer is generated which is capable of temporarily trapping (ie, up to a specific temperature) followed by hydrogen atoms implanted during the split implant step. The implant dose and energy are also selected to cause the layer 3 reactive species to be located adjacent to the chlorine An area of the region to be implanted during the implantation step that will be intended to form a fracture layer for subsequent division With fluorine implants, the auxiliary defects formed can be, for example, cavities, {113" type defects, and erbium, which will allow subsequent implantation of hydrogen by forming a stable mismatch between the gas atoms and the chlorine atoms. Similarly, the retention of substances such as H_F bonds. Similarly, implantation using carbon or nitrogen atoms results in the formation of an auxiliary defect in the donor wafer and will allow for the formation of stable complexes (such as C_H bonds or NH bonds). The subsequently implanted hydrogen atoms are captured. Once the meta-reactive material is implanted, the commonly performed implantation step is performed to achieve the splitting of the layer from the donor wafer (step S2, Figure 2B). Also after the split implant step Performing a Reactive Substance Implantation Step (Step sr) 〇123137.doc -13- 200822193 During this split implant step, wafer 1 is subjected to ion bombardment 20 of H+ hydrogen ions. (for example) H+ at an implant dose between 20 keV and 250 keV and an implant dose of about 3.1 〇16 atoms/cm2 to 6.1 〇16 atoms/cm2, preferably 5.5.1016 atoms/cm2 Ion implantation. The implant dose is selected such that the H+ ion/length is sufficient to form and develop a microcavity or lamella during the post-heat treatment step, which first delimits a film or layer 4 in the upper region of wafer i And secondly corresponding to the remaining portion of the wafer defect delimiting a portion 5 in the lower region of the wafer. Most of the implanted H+ ions are trapped at layer 3, forming a stable complex with the fluorine atoms present in the defects of layer 3. The formation/development of the microcavities or lamellae that cause the splitting is then delayed, as long as the implantation of hydrogen is not available for pressurizing the microcavities and platelets. The donor wafer germanium molecules are then bonded to a receiving wafer 6 (e.g., a Shihua crystal circle) (step S3, Fig. 2C). The principle of molecular bonding is well known and need not be described in more detail. (4) The direct contact of the (4) surfaces of the molecular bonding system, that is, 'do not use any specific material (glue, wax, low-metal, etc.), the gravitational force between the two surfaces is sufficiently high to cause the molecules: two surfaces The interaction of electrons between atoms or molecules = [Van Der Waals force] induced joint). As indicated in Figure 1, the bonding energy can be judged with the temperature. Because of the same temperature, the two contact surfaces are called the covalent bond. Instructed that when the joint is a hydrophobic joint, the surface of the arch is also pre-formed as a hydrophobic one, and the step is followed by the temperature (the details of the ancient ones are used in the factory. And increase. (for example) by using two DAY® 〉 于 HF (hydrofluoric acid) chemical cleaning bath to make the two 矽 wafer table 123137.doc -14· 200822193 face hydrophobic. The respective bonding surfaces 7 and 8 of the dome and receiving wafer 6 are therefore preferably treated to be hydrophobic prior to bonding. After the bonding step, the wafer is split at the H+ ion implantation region by application. Heat treatment or split annealing, a splitting step of splitting layer 4 from the wafer (step S4, Fig. 2D). However, the temperature typically encountered in a heating schedule for split annealing in germanium wafers (usually In contrast to 400. (: temperature between 500 ° C), in this case 'due to In order to capture hydrogen, the temperature of the heating schedule for splitting must be high. It is necessary to apply a high heating schedule (that is, have a temperature higher than 500 C) to separate the formed complex (H_F bond cleavage) The leaving of implanted hydrogen can be used to form and develop microcavities/platelets that cause splitting. After hydrogen has been separated from the stable complex, hydrogen can act as a cleavage substance only under the heat treatment effect. Hydrogen is only released at temperatures above the temperature normally used to cause splitting, so it is also produced at temperatures above the usual temperature (temperatures above 500 °C) for the remainder of the wafer to be transferred and the donor wafer. The effect of splitting between the crystals (rearrangement of crystals in the microcavity/platelet and the effect of pressure). Therefore, at the temperature at which the bonding energy is greater than the temperature usually encountered by the split heat treatment, the splitting of the layer to be transferred occurs, thereby This makes it possible to minimize defects at the joint interface to reduce and even eliminate diffused material and to obtain a transfer layer of better quality. Next, a conventional polishing step (chemical-mechanical polishing) is performed to remove the interference layer. The roughness of the rupture surface 9 of the transfer layer 4 is reduced (step S5, FIG. 2E). The interference layer can also be removed by selective chemical etching (etching), followed by polishing to improve the surface roughness. The heat treatment is carried out separately under hydrogen and/or argon or by a combination of 123137.doc -15-200822193. According to a variant of the embodiment, the shards are formed by forming a doped layer in the donor wafer. One or more ionic species capable of reacting with the implant material to form a stable complex as described above are inserted into the wafer. This layer may be deposited or formed by ion implantation. For example, PCVD (electrical) may also be used. Slurry chemical vapor deposition) or LPCVD (low pressure chemical vapor deposition) is used to perform the deposition of the heterojunction. For a donor wafer made of tantalum, the layer is doped with carbon, boron, phosphorus, arsenic, indium or gallium. In general, the dopant system is chosen for the type of donor wafer to be processed. 4A to 4F and 5 illustrate another embodiment of a layer transfer method in accordance with the present invention. This implementation differs from the previously described implementation in that instead of trapping one or more implanted cleavage materials by forming a stable complex, the materials are captured in a pre-formed cavity prior to the splitting implantation step. The starting substrate 11 is a single crystal germanium wafer coated with a layer of germanium dioxide (8? 2) 12 which is obtained by thermal oxidation and has a thickness of about 300 Å. Gas During the first implantation step (step S10), the wafer 11 is first subjected to ion bombardment 30 of helium ions He via a flat surface 17 comprising a wafer 11 of the Si〇2 layer 11. Between 10 keV and 150 keV, preferably 50 keV implant energy and between 1.10 atoms/cm 2 and 5.1017 atoms/cm 2 , in this case preferably 5·1016 atoms/cm 2 implant dose He ion implantation. With such implantation conditions, it is possible to generate the erbium ion collecting layer 13 at a certain depth of the wafer 11 (Fig. 4A). According to the present invention, heat treatment is then performed to allow defects in the form of cavities to develop at the He ion collecting layer 13. And/or forming (step S2, Figure 4B). This 123137.doc -16- 200822193 equal cavity will form a reservoir to temporarily capture the splitting material implanted during the following steps. The temperature range from 450 ° C to 1000 ° C is covered, in this case preferably 600 ° C, and the heat treatment is carried out for a period of time between 30 minutes and 1 minute, preferably 1 hour in this case. Figure 6 shows a sputum implant with an implant energy of approximately 50 keV and an implant dose of approximately 11 〇 16 atoms/cm 2 followed by a cavity formed at 6 〇 after the TC heat treatment for 1 hour. Incoming type (substance, implant energy/dose) (used to form a fracture layer for delamination) to determine the implantation conditions and heating schedule during the formation of the trapping cavity to promote the maximum trapping reaction. Depending on the type of implant used to split, make a thick layer of small cavities/capture reservoirs, or make thinner layers with larger cavities/capture reservoirs. By way of example, Figure 7 shows Including a thick layer (ie, about 2 〇〇 nm) of the germanium wafer, the thick layer containing the implantation energy at a dose of 50 keV and a implantation dose of about 51 〇i 6 atoms/cm 2 The heat treatment is then carried out at 600 ° C, and the thickness and cavity size of the layer obtained after a few hours are particularly suitable for capturing an implantation energy of about 30 keV and about 5·51 〇 16 atoms/cm 2 . Implanted dose to implant the gas ions. Once the trapping cavity is completed, a common implantation step is performed to make the layer The donor wafer is split (step S3, Fig. 4C). In this implantation step, the wafer 11 is hit 4G by the ion of the m ion. In the example considered, the implantation is performed, for example, at about 30 keV. Ion implantation can be performed with an implant of approximately 551 〇 10 atoms/(10) 2 . The implant dose is selected such that the mineral ion concentration is sufficient to form and develop a microcavity or lamella during the post-heat treatment step. .doc -17- 200822193 The subsequent heat treatment step first delimits a thin layer or film 14' in the upper region of the wafer and secondly corresponds to the remaining portion of the wafer in the lower region of the wafer. Since the implanted H+ ions can easily accommodate themselves in or around the previously created trapping cavity, most of the implanted ions are trapped at layer 13. Figure 8 shows one area of the germanium wafer. It has been subjected to hydrogen ion implantation for subsequent splitting, and the hydrogen ion implantation is performed with an implantation energy of about 30 keV and an implantation dose of about ι·ι〇16 atoms/cm 2 , and the hydrogen ion implantation system Implanted by implant dose of about 50 keV and about 11 〇i6 atoms/cm2 Then, heat treatment is performed at 600 ° C, and the formation of the cavity line formed after a few hours is performed. It should be noted that hydrogen ions are trapped in and between the cavities. Next, the donor wafer 11 is molecularly bonded to a receiving substrate. For example, a germanium wafer (step S40 'Fig. 4D). It is preferred to pre-treat the respective bonding surfaces 17 and 18 of the donor wafer 11 and the receiving wafer 16 to make them hydrophobic before bonding. After the bonding step, The application separates the layer 14 from the wafer U by a split heat treatment that causes the wafer to split at the H+ ion implantation layer (step S5, Figure 4E). However, it is usually used in a heating schedule for split-wafer annealing. The temperature encountered (usually between 400. (: with a temperature between 500 ° C), in this case, the temperature of the heating schedule for splitting must be higher to release the nitrogen trapped in the two JK to apply strong heating schedule (also That is, having a temperature higher than 5 〇〇. 〇) allows the implantation of hydrogen to cause the formation and development of microcavities/platelets that cause splitting, making it possible to enhance the bonding energy at the time of splitting. Since hydrogen is only released at a temperature higher than the temperature normally used to cause the splitting, it is also produced at a temperature higher than the temperature of 123137.doc -18-200822193 (above 5 〇〇. 〇 temperature). A layering effect (crystal rearrangement and pressure effect in the microcavity/platelet) between the layer to be transferred and the remainder of the donor wafer. Therefore, the splitting of the layer to be transferred occurs at a temperature at which the bonding can be stronger than the temperature normally encountered by the split heat treatment, thereby minimizing defects at the joint interface, and reducing and even eliminating the diffusing substance and thereby obtaining better quality. Shift layer. Next, a conventional polishing step (mechanical_chemical polishing) is performed to eliminate the interference layer and reduce the roughness of the fracture surface 19 of the transfer layer 14 (step S6, Fig. 4F). The interference layer can also be removed by selective chemical etching (etching), optionally followed by polishing to improve surface roughness and/or heat treatment under hydrogen and/or argon. By increasing the temperature required to cause cracking in the implanted donor wafer, the method of the present invention enables junction bonding to enhance upon splitting and to minimize defects in the resulting heterostructure. The method of the invention is particularly advantageous for the fabrication of heterostructures of 〇1 type (semiconductor-on-insulator), especially those having a thin insulating oxide layer (UTBOX: ultra-thin buried oxide layer) or even without any oxidation A heterostructure of the layer, such as a DSB type heterostructure (direct enthalpy bonding). The temporary trapping of the implanted splitting material modifies the degassing flow rate. By retaining the maximum amount of gas in the wafer prior to splitting, the "detrimental" flow of the interface quality is correspondingly reduced. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows changes in bonding energy in relation to temperature, and FIGS. 2A to 2E are schematic cross-sectional views showing layer shifting according to an embodiment of the present invention, 123137.doc -19- 200822193 FIG. 3 is a flow chart indicating the steps implemented in FIGS. 2A to 2E, and FIGS. 4A to 4F are schematic cross-sectional views showing the Si layer shift according to another embodiment of the present invention, and FIG. A flow chart of the steps performed in FIGS. 4A to 4F, FIG. 6 shows the formation of a cavity in the Si substrate after the implantation and heat treatment, and FIG. 7 shows a small cavity formed in the Si substrate after the implantation and heat treatment of the crucible. Thick layer, Figure 8 shows a layer in which hydrogen ions implanted in the Si substrate are trapped between and around the cavities formed after the implantation and heat treatment of the crucible. [Main component symbol description] 1 Application wafer/starting substrate or donor substrate 2 Cerium oxide (Si〇2) insulating layer 3 Fluorine atomic layer 4 Film or layer 5 Part 6 Receiving wafer/receiving substrate 7 Surface 8 Surface 9 Rupture surface 10 Ion bombardment 11 Starting substrate / donor wafer 12 Cerium oxide (SiO 2 ) layer 13 He ion collecting layer 14 Thin layer or film 123137.doc -20- 200822193 15 Part 16 Receiving wafer 17 Surface 18 Surface 19 Cracked Surface 20 ion bombardment 30 ion bombardment 40 ion bombardment 123137.doc -21-