FR2981501B1 - Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associes - Google Patents
Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associesInfo
- Publication number
- FR2981501B1 FR2981501B1 FR1159358A FR1159358A FR2981501B1 FR 2981501 B1 FR2981501 B1 FR 2981501B1 FR 1159358 A FR1159358 A FR 1159358A FR 1159358 A FR1159358 A FR 1159358A FR 2981501 B1 FR2981501 B1 FR 2981501B1
- Authority
- FR
- France
- Prior art keywords
- devices
- material layers
- transferring material
- related structures
- integration processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1159358A FR2981501B1 (fr) | 2011-10-17 | 2011-10-17 | Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associes |
TW101127515A TWI573198B (zh) | 2011-09-27 | 2012-07-30 | 在三度空間集積製程中轉移材料層之方法及其相關結構與元件 |
JP2014532486A JP6141853B2 (ja) | 2011-09-27 | 2012-08-13 | 3d集積化プロセスにおいて材料の層を転写する方法ならびに関連する構造体およびデバイス |
CN201280046870.1A CN103828036B (zh) | 2011-09-27 | 2012-08-13 | 在3d集成处理中转移材料层的方法以及相关结构和装置 |
DE112012004024.4T DE112012004024T5 (de) | 2011-09-27 | 2012-08-13 | Verfahren zum Übertragen von Materialschichten in 3D-Integrationsprozessen und damit zusammenhängende Strukturen und Vorrichtungen |
PCT/IB2012/001578 WO2013045985A1 (fr) | 2011-09-27 | 2012-08-13 | Procédés pour transférer des couches de matériau dans des processus d'intégration 3d et structures et dispositifs associés |
KR1020147008836A KR101955375B1 (ko) | 2011-09-27 | 2012-08-13 | 3d 통합 프로세스들로 재료의 층들을 이동시키는 방법들 및 관련 구조들 및 디바이스들 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1159358A FR2981501B1 (fr) | 2011-10-17 | 2011-10-17 | Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2981501A1 FR2981501A1 (fr) | 2013-04-19 |
FR2981501B1 true FR2981501B1 (fr) | 2016-05-13 |
Family
ID=45558144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1159358A Active FR2981501B1 (fr) | 2011-09-27 | 2011-10-17 | Procédé de transfert de couches matériau dans des processus d’intégration 3d et structures et dispositifs associes |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2981501B1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2747506B1 (fr) * | 1996-04-11 | 1998-05-15 | Commissariat Energie Atomique | Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques |
FR2847075B1 (fr) * | 2002-11-07 | 2005-02-18 | Commissariat Energie Atomique | Procede de formation d'une zone fragile dans un substrat par co-implantation |
WO2007017763A2 (fr) * | 2005-07-08 | 2007-02-15 | S.O.I. Tec Silicon On Insulator Technologies | Procede servant a produire une couche |
US7816225B2 (en) * | 2008-10-30 | 2010-10-19 | Corning Incorporated | Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation |
-
2011
- 2011-10-17 FR FR1159358A patent/FR2981501B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR2981501A1 (fr) | 2013-04-19 |
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