FR2907965B1 - Procede de traitement d'un substrat donneur pour la fabrication d'un substrat. - Google Patents

Procede de traitement d'un substrat donneur pour la fabrication d'un substrat.

Info

Publication number
FR2907965B1
FR2907965B1 FR0609465A FR0609465A FR2907965B1 FR 2907965 B1 FR2907965 B1 FR 2907965B1 FR 0609465 A FR0609465 A FR 0609465A FR 0609465 A FR0609465 A FR 0609465A FR 2907965 B1 FR2907965 B1 FR 2907965B1
Authority
FR
France
Prior art keywords
substrate
manufacturing
processing donor
processing
donor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0609465A
Other languages
English (en)
Other versions
FR2907965A1 (fr
Inventor
Konstantin Bourdelle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0609465A priority Critical patent/FR2907965B1/fr
Publication of FR2907965A1 publication Critical patent/FR2907965A1/fr
Application granted granted Critical
Publication of FR2907965B1 publication Critical patent/FR2907965B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
FR0609465A 2006-10-27 2006-10-27 Procede de traitement d'un substrat donneur pour la fabrication d'un substrat. Expired - Fee Related FR2907965B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0609465A FR2907965B1 (fr) 2006-10-27 2006-10-27 Procede de traitement d'un substrat donneur pour la fabrication d'un substrat.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0609465A FR2907965B1 (fr) 2006-10-27 2006-10-27 Procede de traitement d'un substrat donneur pour la fabrication d'un substrat.

Publications (2)

Publication Number Publication Date
FR2907965A1 FR2907965A1 (fr) 2008-05-02
FR2907965B1 true FR2907965B1 (fr) 2009-03-06

Family

ID=38006848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0609465A Expired - Fee Related FR2907965B1 (fr) 2006-10-27 2006-10-27 Procede de traitement d'un substrat donneur pour la fabrication d'un substrat.

Country Status (1)

Country Link
FR (1) FR2907965B1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617066A (en) * 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
KR960039439A (ko) * 1995-04-17 1996-11-25 김광호 폴리실리콘막의 제조방법
AU8036898A (en) * 1997-06-19 1999-01-04 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
US6303508B1 (en) * 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
WO2006037783A1 (fr) * 2004-10-04 2006-04-13 S.O.I.Tec Silicon On Insulator Technologies Procédé de transfert d'une couche mince comprenant une perturbation controlée d'une structure cristalline
FR2884046B1 (fr) * 2005-03-31 2007-06-22 Soitec Silicon On Insulator Procede de fabrication de substrat, et substrat

Also Published As

Publication number Publication date
FR2907965A1 (fr) 2008-05-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20120629