KR960039439A - 폴리실리콘막의 제조방법 - Google Patents
폴리실리콘막의 제조방법 Download PDFInfo
- Publication number
- KR960039439A KR960039439A KR1019950008995A KR19950008995A KR960039439A KR 960039439 A KR960039439 A KR 960039439A KR 1019950008995 A KR1019950008995 A KR 1019950008995A KR 19950008995 A KR19950008995 A KR 19950008995A KR 960039439 A KR960039439 A KR 960039439A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon film
- ion
- argon gas
- argon
- polysilicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052786 argon Inorganic materials 0.000 claims abstract description 9
- 238000005468 ion implantation Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims abstract 5
- 239000000758 substrate Substances 0.000 claims abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- -1 argon ions Chemical class 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract 8
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
Abstract
이 발명은 액정디스플레이용 박막트랜지스터의 폴리실리콘막 제조 방법.에 있어서, 폴리실리콘막의 특성을 향상시키기 위한 폴리실리콘막 이온주입 공정시 이온물질로 아르곤 가스를 사용하는 폴리실리콘막의 제조 방법.에 관한 것으로서, 기판위에 폴리실리콘막을 증착하는 단계와, 상기 폴리실리콘막에 아르곤 가스를 주입하여 상기 폴리실리콘막을 선택적으로 비정질화시키는 단계와,; 상기 비정질화된 실리콘층을 열처리 하여 폴리실리콘막으로 재결정화하는 단계로 이루어져 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도의(가) ∼(라)는 이 발명의 실시예에 따른 폴리 실리콘막의 제조공정을 나타낸 단면도이고, 제4도는 이 발명의 실시예에 다른 아르곤 이온 주입 에너지에 다른 결정화 정도를 나타낸 도표이다.
Claims (5)
- 기판위에 폴리실리콘막을 증착하는 단계와,. 상기 폴리실리콘막에 아르곤이온을 주입하여 상기 폴리실리콘막을 선택적으로 비정질화시키는 단계와,. 상기 비정질화된 실리콘층을 열처리하여 폴리실리콘막으로 재결정화 하는 단계로 이루어져 있는 것을 특징으로 하는 폴리실리콘막의 제조 방법.
- 제1항에 있어서, 상기 아르곤가스의 이온주입은 80KeV 로 이온주입하는 것을 특징으로 하는 폴리실리콘막의 제조 방법.
- 제1항에 있어서, 상기 아르곤가스의 이온주입은 3.0 × 1014/㎠ 내지 8.0 × 1014/㎠로 이온주입하는 것을 특징으로 하는 폴리실리콘막의 제조 방법.
- 제1항에 있어서, 상기 아르곤가스 이온주입시, 아르곤이온의 투사이온영역은 상기 폴리실리콘막 밑의 기판에 놓이게 함으로써 상기 아르곤이 실리콘 내에 남아 결정성장을 방해하는 것을 방지하는 것을 특징으로 하는 폴리실리콘막의제조 방법.
- 제1항에 있어서, 상기 열처리 단계는 650℃이하에서 이루어지는 것을 특징으로 하는 폴리실리콘막의 제조 방법.※참고사항: 최초출원내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950008995A KR960039439A (ko) | 1995-04-17 | 1995-04-17 | 폴리실리콘막의 제조방법 |
US08/632,840 US5821157A (en) | 1995-04-17 | 1996-04-16 | Argon amorphizing polysilicon layer fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950008995A KR960039439A (ko) | 1995-04-17 | 1995-04-17 | 폴리실리콘막의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960039439A true KR960039439A (ko) | 1996-11-25 |
Family
ID=19412345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950008995A KR960039439A (ko) | 1995-04-17 | 1995-04-17 | 폴리실리콘막의 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5821157A (ko) |
KR (1) | KR960039439A (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW399235B (en) * | 1998-12-04 | 2000-07-21 | United Microelectronics Corp | Selective semi-sphere silicon grain manufacturing method |
US6177326B1 (en) * | 1998-12-08 | 2001-01-23 | United Microelectronics Corp. | Method to form bottom electrode of capacitor |
DE10006378C2 (de) * | 2000-02-12 | 2001-12-06 | Rossendorf Forschzent | Verfahren zur Herstellung Ohmscher Kontakte auf Siliziumkarbid-Halbleiterbereichen |
DE10231407B4 (de) * | 2002-07-11 | 2007-01-11 | Infineon Technologies Ag | Bipolartransistor |
TWI291310B (en) * | 2005-12-01 | 2007-12-11 | Au Optronics Corp | Organic light emitting diode (OLED) display panel and method of forming polysilicon channel layer thereof |
FR2907965B1 (fr) * | 2006-10-27 | 2009-03-06 | Soitec Silicon On Insulator | Procede de traitement d'un substrat donneur pour la fabrication d'un substrat. |
US11676961B2 (en) | 2020-11-01 | 2023-06-13 | Texas Instruments Incorporated | Semiconductor device with low noise transistor and low temperature coefficient resistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5580815A (en) * | 1993-08-12 | 1996-12-03 | Motorola Inc. | Process for forming field isolation and a structure over a semiconductor substrate |
JPH07106512A (ja) * | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたsimox処理方法 |
-
1995
- 1995-04-17 KR KR1019950008995A patent/KR960039439A/ko not_active Application Discontinuation
-
1996
- 1996-04-16 US US08/632,840 patent/US5821157A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5821157A (en) | 1998-10-13 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |