KR100941105B1 - 스위칭 소자와 2개의 다이오드를 구비한 반도체 장치 - Google Patents

스위칭 소자와 2개의 다이오드를 구비한 반도체 장치 Download PDF

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Publication number
KR100941105B1
KR100941105B1 KR1020070096321A KR20070096321A KR100941105B1 KR 100941105 B1 KR100941105 B1 KR 100941105B1 KR 1020070096321 A KR1020070096321 A KR 1020070096321A KR 20070096321 A KR20070096321 A KR 20070096321A KR 100941105 B1 KR100941105 B1 KR 100941105B1
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South Korea
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diode
region
impurity region
type impurity
semiconductor device
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KR1020070096321A
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Korean (ko)
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KR20080071054A (ko
Inventor
요시히코 히로타
치히로 타도코로
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020070096321A 2007-01-29 2007-09-21 스위칭 소자와 2개의 다이오드를 구비한 반도체 장치 Expired - Fee Related KR100941105B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007017913A JP5196794B2 (ja) 2007-01-29 2007-01-29 半導体装置
JPJP-P-2007-00017913 2007-01-29

Publications (2)

Publication Number Publication Date
KR20080071054A KR20080071054A (ko) 2008-08-01
KR100941105B1 true KR100941105B1 (ko) 2010-02-10

Family

ID=39587449

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070096321A Expired - Fee Related KR100941105B1 (ko) 2007-01-29 2007-09-21 스위칭 소자와 2개의 다이오드를 구비한 반도체 장치

Country Status (5)

Country Link
US (1) US7755167B2 (enExample)
JP (1) JP5196794B2 (enExample)
KR (1) KR100941105B1 (enExample)
CN (1) CN101236964B (enExample)
DE (1) DE102007039624A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539134B2 (ja) * 2010-09-16 2014-07-02 三菱電機株式会社 半導体装置
KR101301387B1 (ko) * 2011-09-16 2013-08-28 삼성전기주식회사 전력 반도체 모듈
CN106067799B (zh) * 2016-06-13 2019-03-05 南京芯舟科技有限公司 一种半导体器件
JP2019161495A (ja) * 2018-03-14 2019-09-19 富士電機株式会社 半導体装置および装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297358A (ja) * 1994-04-28 1995-11-10 Mitsubishi Electric Corp 半導体パワーモジュールおよび電力変換装置
JP2001111398A (ja) * 1999-10-13 2001-04-20 Fuji Electric Co Ltd 半導体双方向スイッチ用スパイク電圧抑制回路
JP2003033044A (ja) * 2001-07-09 2003-01-31 Mitsubishi Electric Corp スナバ回路
JP2005045261A (ja) * 2003-07-25 2005-02-17 Siemens Ag トランジスタモジュール

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Publication number Priority date Publication date Assignee Title
JPS5548958A (en) * 1978-10-02 1980-04-08 Nec Corp Semiconductor device
JPS6269564A (ja) * 1985-09-20 1987-03-30 Nec Corp 半導体装置
JPS62108578A (ja) * 1985-11-06 1987-05-19 Rohm Co Ltd 半導体装置
JPS62210858A (ja) 1986-03-10 1987-09-16 Mitsubishi Electric Corp 複合ダイオ−ド
EP0314465B1 (en) 1987-10-27 1998-05-06 Nec Corporation Semiconductor device with an isolated vertical power MOSFET.
JP3032745B2 (ja) * 1992-09-04 2000-04-17 三菱電機株式会社 絶縁ゲート型半導体装置
JPH09181335A (ja) * 1995-12-25 1997-07-11 Rohm Co Ltd 半導体装置
FR2773265B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
JP2002142443A (ja) * 2000-11-01 2002-05-17 Fuji Electric Co Ltd 電力用半導体素子駆動用ｉｃの保護回路
JP4761644B2 (ja) 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
US6657256B2 (en) 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
JP4511784B2 (ja) * 2001-12-20 2010-07-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｌｅｄアレイ及びｌｅｄモジュール
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4506276B2 (ja) 2004-05-17 2010-07-21 富士電機システムズ株式会社 自己消弧形半導体素子の駆動回路
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor
JP5034461B2 (ja) * 2006-01-10 2012-09-26 株式会社デンソー 半導体装置
JP5033335B2 (ja) * 2006-02-21 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いたインバータ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297358A (ja) * 1994-04-28 1995-11-10 Mitsubishi Electric Corp 半導体パワーモジュールおよび電力変換装置
JP2001111398A (ja) * 1999-10-13 2001-04-20 Fuji Electric Co Ltd 半導体双方向スイッチ用スパイク電圧抑制回路
JP2003033044A (ja) * 2001-07-09 2003-01-31 Mitsubishi Electric Corp スナバ回路
JP2005045261A (ja) * 2003-07-25 2005-02-17 Siemens Ag トランジスタモジュール

Also Published As

Publication number Publication date
DE102007039624A1 (de) 2008-08-07
US7755167B2 (en) 2010-07-13
US20080179704A1 (en) 2008-07-31
JP2008186920A (ja) 2008-08-14
JP5196794B2 (ja) 2013-05-15
CN101236964A (zh) 2008-08-06
CN101236964B (zh) 2011-04-27
KR20080071054A (ko) 2008-08-01

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