CN101236964B - 具有开关元件和两个二极管的半导体装置 - Google Patents

具有开关元件和两个二极管的半导体装置 Download PDF

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Publication number
CN101236964B
CN101236964B CN2007101629044A CN200710162904A CN101236964B CN 101236964 B CN101236964 B CN 101236964B CN 2007101629044 A CN2007101629044 A CN 2007101629044A CN 200710162904 A CN200710162904 A CN 200710162904A CN 101236964 B CN101236964 B CN 101236964B
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CN
China
Prior art keywords
diode
semiconductor device
anode
region
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101629044A
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English (en)
Chinese (zh)
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CN101236964A (zh
Inventor
广田庆彦
田所千广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN101236964A publication Critical patent/CN101236964A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2007101629044A 2007-01-29 2007-09-27 具有开关元件和两个二极管的半导体装置 Expired - Fee Related CN101236964B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007017913A JP5196794B2 (ja) 2007-01-29 2007-01-29 半導体装置
JP2007017913 2007-01-29
JP2007-017913 2007-01-29

Publications (2)

Publication Number Publication Date
CN101236964A CN101236964A (zh) 2008-08-06
CN101236964B true CN101236964B (zh) 2011-04-27

Family

ID=39587449

Family Applications (1)

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CN2007101629044A Expired - Fee Related CN101236964B (zh) 2007-01-29 2007-09-27 具有开关元件和两个二极管的半导体装置

Country Status (5)

Country Link
US (1) US7755167B2 (enExample)
JP (1) JP5196794B2 (enExample)
KR (1) KR100941105B1 (enExample)
CN (1) CN101236964B (enExample)
DE (1) DE102007039624A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539134B2 (ja) * 2010-09-16 2014-07-02 三菱電機株式会社 半導体装置
KR101301387B1 (ko) 2011-09-16 2013-08-28 삼성전기주식회사 전력 반도체 모듈
CN106067799B (zh) * 2016-06-13 2019-03-05 南京芯舟科技有限公司 一种半导体器件
JP2019161495A (ja) * 2018-03-14 2019-09-19 富士電機株式会社 半導体装置および装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548958A (en) * 1978-10-02 1980-04-08 Nec Corp Semiconductor device
JPS6269564A (ja) * 1985-09-20 1987-03-30 Nec Corp 半導体装置
JPS62108578A (ja) * 1985-11-06 1987-05-19 Rohm Co Ltd 半導体装置
JPS62210858A (ja) 1986-03-10 1987-09-16 Mitsubishi Electric Corp 複合ダイオ−ド
DE3856174T2 (de) 1987-10-27 1998-09-03 Nippon Electric Co Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.
JP3032745B2 (ja) * 1992-09-04 2000-04-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3193827B2 (ja) 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
JPH09181335A (ja) * 1995-12-25 1997-07-11 Rohm Co Ltd 半導体装置
FR2773265B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
JP2001111398A (ja) * 1999-10-13 2001-04-20 Fuji Electric Co Ltd 半導体双方向スイッチ用スパイク電圧抑制回路
JP2002142443A (ja) * 2000-11-01 2002-05-17 Fuji Electric Co Ltd 電力用半導体素子駆動用ｉｃの保護回路
JP4761644B2 (ja) 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
US6657256B2 (en) 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
JP2003033044A (ja) 2001-07-09 2003-01-31 Mitsubishi Electric Corp スナバ回路
US6803732B2 (en) * 2001-12-20 2004-10-12 Osram Opto Semiconductors Gmbh LED array and LED module with chains of LEDs connected in parallel
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
DE10334079B4 (de) 2003-07-25 2008-08-21 Siemens Ag Transistormodul
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4506276B2 (ja) 2004-05-17 2010-07-21 富士電機システムズ株式会社 自己消弧形半導体素子の駆動回路
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor
JP5034461B2 (ja) * 2006-01-10 2012-09-26 株式会社デンソー 半導体装置
JP5033335B2 (ja) * 2006-02-21 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いたインバータ装置

Also Published As

Publication number Publication date
KR20080071054A (ko) 2008-08-01
US20080179704A1 (en) 2008-07-31
US7755167B2 (en) 2010-07-13
JP5196794B2 (ja) 2013-05-15
JP2008186920A (ja) 2008-08-14
CN101236964A (zh) 2008-08-06
DE102007039624A1 (de) 2008-08-07
KR100941105B1 (ko) 2010-02-10

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