KR100855885B1 - 낮은 저항 소스 영역들과 높은 소스 연결을 갖춘 부동게이트 메모리 셀들의 반도체 메모리 어레이를 형성하는자기 정렬 방법 및, 그에의해 만들어진 메모리 어레이 - Google Patents

낮은 저항 소스 영역들과 높은 소스 연결을 갖춘 부동게이트 메모리 셀들의 반도체 메모리 어레이를 형성하는자기 정렬 방법 및, 그에의해 만들어진 메모리 어레이 Download PDF

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KR100855885B1
KR100855885B1 KR1020010058313A KR20010058313A KR100855885B1 KR 100855885 B1 KR100855885 B1 KR 100855885B1 KR 1020010058313 A KR1020010058313 A KR 1020010058313A KR 20010058313 A KR20010058313 A KR 20010058313A KR 100855885 B1 KR100855885 B1 KR 100855885B1
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forming
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KR20020022630A (ko
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왕치신
레비아미태이
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실리콘 스토리지 테크놀로지 인크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020010058313A 2000-09-20 2001-09-20 낮은 저항 소스 영역들과 높은 소스 연결을 갖춘 부동게이트 메모리 셀들의 반도체 메모리 어레이를 형성하는자기 정렬 방법 및, 그에의해 만들어진 메모리 어레이 Expired - Lifetime KR100855885B1 (ko)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US23431400P 2000-09-20 2000-09-20
US60/234,314 2000-09-20
US24209600P 2000-10-19 2000-10-19
US60/242,096 2000-10-19
US26016701P 2001-01-05 2001-01-05
US60/260,167 2001-01-05
US27551701P 2001-03-12 2001-03-12
US60/275,517 2001-03-12
US28704701P 2001-04-26 2001-04-26
US60/287,047 2001-04-26
US09/916,555 2001-07-26
US09/916,555 US6727545B2 (en) 2000-09-20 2001-07-26 Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling

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KR20020022630A KR20020022630A (ko) 2002-03-27
KR100855885B1 true KR100855885B1 (ko) 2008-09-03

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US (2) US6727545B2 (enExample)
EP (1) EP1191586A2 (enExample)
JP (1) JP5027365B2 (enExample)
KR (1) KR100855885B1 (enExample)
CN (1) CN1222992C (enExample)

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KR20170101303A (ko) * 2015-01-05 2017-09-05 실리콘 스토리지 테크놀로지 인크 금속 게이트들을 갖는 분리형 게이트 비휘발성 플래시 메모리 셀 및 이를 제조하는 방법

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KR100481871B1 (ko) * 2002-12-20 2005-04-11 삼성전자주식회사 플로팅 게이트를 갖는 비휘발성 기억 셀 및 그 형성방법
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US6727545B2 (en) 2004-04-27
US20040084717A1 (en) 2004-05-06
US20020034849A1 (en) 2002-03-21
CN1362736A (zh) 2002-08-07
EP1191586A2 (en) 2002-03-27
US6855980B2 (en) 2005-02-15
KR20020022630A (ko) 2002-03-27
JP2002158302A (ja) 2002-05-31
CN1222992C (zh) 2005-10-12
JP5027365B2 (ja) 2012-09-19

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