JP5027365B2 - 低抵抗ソース領域と高ソース結合を持つフローティングゲートメモリセルの半導体メモリアレイを形成する自己整合方法、及びそれにより作られたメモリアレイ - Google Patents

低抵抗ソース領域と高ソース結合を持つフローティングゲートメモリセルの半導体メモリアレイを形成する自己整合方法、及びそれにより作られたメモリアレイ Download PDF

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JP5027365B2
JP5027365B2 JP2001284734A JP2001284734A JP5027365B2 JP 5027365 B2 JP5027365 B2 JP 5027365B2 JP 2001284734 A JP2001284734 A JP 2001284734A JP 2001284734 A JP2001284734 A JP 2001284734A JP 5027365 B2 JP5027365 B2 JP 5027365B2
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forming
region
conductive material
floating gate
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JP2002158302A5 (enExample
JP2002158302A (ja
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チー・シン・ワン
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Silicon Storage Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2001284734A 2000-09-20 2001-09-19 低抵抗ソース領域と高ソース結合を持つフローティングゲートメモリセルの半導体メモリアレイを形成する自己整合方法、及びそれにより作られたメモリアレイ Expired - Lifetime JP5027365B2 (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US23431400P 2000-09-20 2000-09-20
US60/234314 2000-09-20
US24209600P 2000-10-19 2000-10-19
US60/242096 2000-10-19
US26016701P 2001-01-05 2001-01-05
US27551701P 2001-03-12 2001-03-12
US28704701P 2001-04-26 2001-04-26
US60/260167 2001-07-26
US60/287047 2001-07-26
US09/916,555 US6727545B2 (en) 2000-09-20 2001-07-26 Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling
US09/916555 2001-07-26
US60/275517 2001-07-26

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JP2002158302A JP2002158302A (ja) 2002-05-31
JP2002158302A5 JP2002158302A5 (enExample) 2008-09-04
JP5027365B2 true JP5027365B2 (ja) 2012-09-19

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US (2) US6727545B2 (enExample)
EP (1) EP1191586A2 (enExample)
JP (1) JP5027365B2 (enExample)
KR (1) KR100855885B1 (enExample)
CN (1) CN1222992C (enExample)

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KR20020022630A (ko) 2002-03-27
US20040084717A1 (en) 2004-05-06
US6855980B2 (en) 2005-02-15
US20020034849A1 (en) 2002-03-21
US6727545B2 (en) 2004-04-27
CN1222992C (zh) 2005-10-12
JP2002158302A (ja) 2002-05-31
KR100855885B1 (ko) 2008-09-03
EP1191586A2 (en) 2002-03-27
CN1362736A (zh) 2002-08-07

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