JP2002158302A5 - - Google Patents

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Publication number
JP2002158302A5
JP2002158302A5 JP2001284734A JP2001284734A JP2002158302A5 JP 2002158302 A5 JP2002158302 A5 JP 2002158302A5 JP 2001284734 A JP2001284734 A JP 2001284734A JP 2001284734 A JP2001284734 A JP 2001284734A JP 2002158302 A5 JP2002158302 A5 JP 2002158302A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001284734A
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Japanese (ja)
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JP5027365B2 (ja
JP2002158302A (ja
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Publication date
Priority claimed from US09/916,555 external-priority patent/US6727545B2/en
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Publication of JP2002158302A publication Critical patent/JP2002158302A/ja
Publication of JP2002158302A5 publication Critical patent/JP2002158302A5/ja
Application granted granted Critical
Publication of JP5027365B2 publication Critical patent/JP5027365B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001284734A 2000-09-20 2001-09-19 低抵抗ソース領域と高ソース結合を持つフローティングゲートメモリセルの半導体メモリアレイを形成する自己整合方法、及びそれにより作られたメモリアレイ Expired - Lifetime JP5027365B2 (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US23431400P 2000-09-20 2000-09-20
US60/234314 2000-09-20
US24209600P 2000-10-19 2000-10-19
US60/242096 2000-10-19
US26016701P 2001-01-05 2001-01-05
US27551701P 2001-03-12 2001-03-12
US28704701P 2001-04-26 2001-04-26
US60/260167 2001-07-26
US60/287047 2001-07-26
US09/916,555 US6727545B2 (en) 2000-09-20 2001-07-26 Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling
US09/916555 2001-07-26
US60/275517 2001-07-26

Publications (3)

Publication Number Publication Date
JP2002158302A JP2002158302A (ja) 2002-05-31
JP2002158302A5 true JP2002158302A5 (enExample) 2008-09-04
JP5027365B2 JP5027365B2 (ja) 2012-09-19

Family

ID=27559246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001284734A Expired - Lifetime JP5027365B2 (ja) 2000-09-20 2001-09-19 低抵抗ソース領域と高ソース結合を持つフローティングゲートメモリセルの半導体メモリアレイを形成する自己整合方法、及びそれにより作られたメモリアレイ

Country Status (5)

Country Link
US (2) US6727545B2 (enExample)
EP (1) EP1191586A2 (enExample)
JP (1) JP5027365B2 (enExample)
KR (1) KR100855885B1 (enExample)
CN (1) CN1222992C (enExample)

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CN112185970B (zh) * 2019-07-02 2024-05-28 硅存储技术公司 形成分裂栅存储器单元的方法
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