KR100818287B1 - 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 - Google Patents

폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 Download PDF

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KR100818287B1
KR100818287B1 KR20070003070A KR20070003070A KR100818287B1 KR 100818287 B1 KR100818287 B1 KR 100818287B1 KR 20070003070 A KR20070003070 A KR 20070003070A KR 20070003070 A KR20070003070 A KR 20070003070A KR 100818287 B1 KR100818287 B1 KR 100818287B1
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South Korea
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layer
forming
insulating layer
heater
amorphous material
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Expired - Fee Related
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KR20070003070A
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English (en)
Korean (ko)
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최준희
안드레이 줄카니브
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삼성전자주식회사
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Priority to KR20070003070A priority Critical patent/KR100818287B1/ko
Priority to US11/882,725 priority patent/US7960220B2/en
Priority to JP2008003574A priority patent/JP5207745B2/ja
Priority to CNA2008101428961A priority patent/CN101320685A/zh
Application granted granted Critical
Publication of KR100818287B1 publication Critical patent/KR100818287B1/ko
Priority to US12/929,587 priority patent/US8445333B2/en
Priority to US13/713,589 priority patent/US9136353B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K29/00—Combinations of writing implements with other articles
    • B43K29/18—Combinations of writing implements with other articles with hand tools, e.g. erasing knives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K24/00—Mechanisms for selecting, projecting, retracting or locking writing units
    • B43K24/10—Mechanisms for selecting, projecting, retracting or locking writing units for selecting, projecting and locking several writing units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K25/00—Attaching writing implements to wearing apparel or objects involving constructional changes of the implements
    • B43K25/02—Clips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K29/00—Combinations of writing implements with other articles
    • B43K29/02—Combinations of writing implements with other articles with rubbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
KR20070003070A 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 Expired - Fee Related KR100818287B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR20070003070A KR100818287B1 (ko) 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법
US11/882,725 US7960220B2 (en) 2007-01-10 2007-08-03 Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
JP2008003574A JP5207745B2 (ja) 2007-01-10 2008-01-10 ポリシリコンの形成方法、当該ポリシリコンを備える薄膜トランジスタ及びその形成方法
CNA2008101428961A CN101320685A (zh) 2007-01-10 2008-01-10 形成多晶硅的方法和采用多晶硅的薄膜晶体管及其制法
US12/929,587 US8445333B2 (en) 2007-01-10 2011-02-02 Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
US13/713,589 US9136353B2 (en) 2007-01-10 2012-12-13 Polysilicon-based thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20070003070A KR100818287B1 (ko) 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법

Publications (1)

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KR100818287B1 true KR100818287B1 (ko) 2008-03-31

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KR20070003070A Expired - Fee Related KR100818287B1 (ko) 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법

Country Status (4)

Country Link
US (3) US7960220B2 (cg-RX-API-DMAC7.html)
JP (1) JP5207745B2 (cg-RX-API-DMAC7.html)
KR (1) KR100818287B1 (cg-RX-API-DMAC7.html)
CN (1) CN101320685A (cg-RX-API-DMAC7.html)

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Publication number Priority date Publication date Assignee Title
US7269034B2 (en) 1997-01-24 2007-09-11 Synqor, Inc. High efficiency power converter
KR100818287B1 (ko) * 2007-01-10 2008-03-31 삼성전자주식회사 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법
KR20100086735A (ko) * 2009-01-23 2010-08-02 삼성전자주식회사 실리콘 막 형성 방법, ｐｎ 접합 형성 방법 및 이를 이용하여 형성된 ｐｎ 접합
CN103489762A (zh) * 2012-06-08 2014-01-01 胜华科技股份有限公司 形成多晶硅薄膜的方法
EP2671965A3 (en) * 2012-06-08 2014-03-12 Wintek Corporation Method of forming thin film polysilicon layer and method of forming thin film transistor
TWI506171B (zh) * 2012-06-08 2015-11-01 勝華科技股份有限公司 形成多晶矽薄膜之方法
KR20140104792A (ko) * 2013-02-21 2014-08-29 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
CN105097547A (zh) * 2015-06-01 2015-11-25 合肥京东方光电科技有限公司 多晶硅薄膜晶体管及其制作方法、阵列基板及其制作方法
CN109003941B (zh) * 2018-07-26 2021-01-15 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

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KR20000001232A (ko) * 1998-06-10 2000-01-15 장진 비정질 막을 결정화하는 방법
KR20000018565A (ko) * 1998-09-03 2000-04-06 최덕균 비정질 실리콘 박막을 결정화하는 방법과이를 이용한 다결정실리콘 박막트랜지스터 제조방법
KR20020058271A (ko) * 2000-12-29 2002-07-12 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법

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KR20000018565A (ko) * 1998-09-03 2000-04-06 최덕균 비정질 실리콘 박막을 결정화하는 방법과이를 이용한 다결정실리콘 박막트랜지스터 제조방법
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Also Published As

Publication number Publication date
US9136353B2 (en) 2015-09-15
CN101320685A (zh) 2008-12-10
US20130126880A1 (en) 2013-05-23
US20080164475A1 (en) 2008-07-10
US7960220B2 (en) 2011-06-14
US20110124184A1 (en) 2011-05-26
JP5207745B2 (ja) 2013-06-12
US8445333B2 (en) 2013-05-21
JP2008172245A (ja) 2008-07-24

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