KR100807136B1 - 플라즈마 챔버에서 유용한 정전 에지 링 척을 포함하는 커플링 링 어셈블리 및 플라즈마 챔버를 사용하여 반도체 기판을 처리하는 방법 - Google Patents
플라즈마 챔버에서 유용한 정전 에지 링 척을 포함하는 커플링 링 어셈블리 및 플라즈마 챔버를 사용하여 반도체 기판을 처리하는 방법 Download PDFInfo
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- KR100807136B1 KR100807136B1 KR1020037003501A KR20037003501A KR100807136B1 KR 100807136 B1 KR100807136 B1 KR 100807136B1 KR 1020037003501 A KR1020037003501 A KR 1020037003501A KR 20037003501 A KR20037003501 A KR 20037003501A KR 100807136 B1 KR100807136 B1 KR 100807136B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemical Vapour Deposition (AREA)
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Abstract
Description
Claims (25)
- 플라즈마 반응 챔버 내의 기판 서포트를 둘러싸는데 사용되는 커플링 링 어셈블리(coupling ring assembly)로서,환상(環狀)의 지지면(annular support surface)을 가지는 부재;상기 환상의 지지면 상의 정전 척(electrostatic chuck); 및상기 기판 서포트 상에 위치한 기판의 하부 면과 에지 링의 상부 면 사이에 간극을 제공하도록 치수화된 상기 정전 척 상의 에지 링을 포함하는, 커플링 링 어셈블리.
- 제 1 항에 있어서,상기 정전 척은 하나 이상의 내부 전극(internal electrode)을 가지는 세라믹 본체(body)를 포함하는, 커플링 링 어셈블리.
- 제 1 항에 있어서,상기 정전 척은 접착제에 의하여 상기 지지면과 부착되어 있는, 커플링 링 어셈블리.
- 제 1 항에 있어서,상기 부재 및 상기 정전 척을 통하여 신장된 하나 이상의 가스 통로(gas passage)를 더 포함하고, 상기 가스 통로는 상기 정전 척의 노출된 표면에 열 전달 가스를 공급하는데 사용되는, 커플링 링 어셈블리.
- 제 1 항에 있어서,상기 정전 척은 바이폴라 (bipolar) 척을 포함하는, 커플링 링 어셈블리.
- 플라즈마 반응 챔버 내의 기판 서포트를 둘러싸는데 사용되는 커플링 링 어셈블리를 포함하고,상기 커플링 링 어셈블리는,환상의 지지면을 갖는 부재;상기 환상의 지지면 상의 정전 에지 링 척; 및상기 기판 서포트 상에 위치하는 기판의 하부 면과 에지 링의 상부 면 사이에 간극을 제공하도록 치수화된 상기 에지 링 척 상의 에지 링을 포함하는, 플라즈마 반응 챔버.
- 제 6 항에 있어서,상기 기판 서포트는, 정전 웨이퍼 척을 그 상부 면상에 구비하는 베이스플레이트(baseplate)를 포함하는, 플라즈마 반응 챔버.
- 제 6 항에 있어서,상기 부재의 하부 면은 상기 기판 서포트의 상부 면과 접촉하는, 플라즈마 반응 챔버.
- 제 7 항에 있어서,상기 웨이퍼 척의 상부 면은 상기 에지 링 척의 상부 면보다 높이가 더 높은, 플라즈마 반응 챔버.
- 제 7 항에 있어서,상기 웨이퍼 척과 상기 에지 링 척 사이의 상기 베이스플레이트에 그루브(groove)를 더 포함하는, 플라즈마 반응 챔버.
- 제 6 항에 있어서,상기 에지 링은 상기 에지 링 척에 정전기력에 의하여 고정되도록 사용되는, 플라즈마 반응 챔버.
- 제 6 항에 있어서,상기 에지 링은 전기 전도성 물질을 포함하는, 플라즈마 반응 챔버.
- 제 12 항에 있어서,상기 에지 링은 실리콘을 포함하는, 플라즈마 반응 챔버.
- 제 7 항에 있어서,상기 에지 링은 상부 표면의 내축 가장자리에 리세스(recess)를 포함하며, 상기 리세스는 상기 웨이퍼 척에 탑재되는 웨이퍼의 아래쪽과 맞도록 형성되어 있는, 플라즈마 반응 챔버.
- 제 7 항에 있어서,상기 베이스플레이트는 전기 전도성 물질을 포함하는, 플라즈마 반응 챔버.
- 제 15 항에 있어서,상기 베이스플레이트는 RF 에 의하여 구동되는 전극인, 플라즈마 반응 챔버.
- 제 7 항에 있어서,상기 에지 링은 상기 에지 링 척에 정전기력에 의하여 고정되도록 사용되는, 플라즈마 반응 챔버.
- 제 16 항에 있어서,상기 플라즈마 반응 챔버는 상기 베이스플레이트와 마주보는 상부 전극을 구비하는 평행 플레이트 반응기를 포함하는, 플라즈마 반응 챔버.
- 제 18 항에 있어서,상기 웨이퍼의 바깥쪽 가장자리가 상기 웨이퍼의 하부 면과 상기 에지 링의 상부 면 사이에 있는 간극을 가진 채 상기 에지 링에 걸쳐있도록 상기 웨이퍼 척 상에 탑재된 웨이퍼를 더 포함하는, 플라즈마 반응 챔버.
- 제 19 항에 있어서,상기 웨이퍼는 상기 에지 링의 안쪽 가장자리에 걸쳐있는, 플라즈마 반응 챔버.
- 제 19 항에 있어서,상기 간극의 최대 크기는 0.002 내지 0.003인치(inch) 의 범위를 갖는, 플라즈마 반응 챔버.
- 제 6 항에 있어서,상기 커플링 링 어셈블리는 볼트 또는 스크류 나사에 의하여 상기 기판 서포트에 고정되는, 플라즈마 반응 챔버.
- 제 6 항에 있어서,상기 플라즈마 반응 챔버는 반도체 식각 장치인 , 플라즈마 반응 챔버.
- 제 7 항에 기재된 상기 플라즈마 반응 챔버에서 반도체 기판을 처리하는 방법으로서,웨이퍼를 상기 웨이퍼 척에 정전기력으로 고정시키는 단계;상기 에지 링을 상기 에지 링 척에 정전기력으로 고정시키는 단계;공정 가스를 상기 플라즈마 챔버의 내부로 공급하는 단계;상기 공정 가스를 플라즈마 상태로 활성화시키는 단계; 및상기 플라즈마를 사용하여 상기 웨이퍼를 가공 처리하는 단계를 포함하는, 반도체 기판 처리방법.
- 제 24 항에 있어서,상기 에지 링과 상기 환형 지지면의 마주보는 표면 사이에 열 전달 가스를 공급하여 상기 에지 링의 온도를 제어하는 단계를 더 포함하는, 반도체 기판 처리방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/680,515 | 2000-10-06 | ||
US09/680,515 US6475336B1 (en) | 2000-10-06 | 2000-10-06 | Electrostatically clamped edge ring for plasma processing |
PCT/US2001/030286 WO2002031219A1 (en) | 2000-10-06 | 2001-09-26 | Electrostatically clamped edge ring for plasma processing |
Publications (2)
Publication Number | Publication Date |
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KR20030051645A KR20030051645A (ko) | 2003-06-25 |
KR100807136B1 true KR100807136B1 (ko) | 2008-02-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020037003501A KR100807136B1 (ko) | 2000-10-06 | 2001-09-26 | 플라즈마 챔버에서 유용한 정전 에지 링 척을 포함하는 커플링 링 어셈블리 및 플라즈마 챔버를 사용하여 반도체 기판을 처리하는 방법 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6475336B1 (ko) |
EP (1) | EP1332241B1 (ko) |
JP (1) | JP4913313B2 (ko) |
KR (1) | KR100807136B1 (ko) |
CN (2) | CN1285757C (ko) |
AT (1) | ATE407232T1 (ko) |
AU (1) | AU2001296352A1 (ko) |
CA (1) | CA2419130A1 (ko) |
DE (1) | DE60135672D1 (ko) |
IL (2) | IL154439A0 (ko) |
WO (1) | WO2002031219A1 (ko) |
Cited By (4)
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- 2001-09-26 IL IL15443901A patent/IL154439A0/xx active IP Right Grant
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- 2001-09-26 WO PCT/US2001/030286 patent/WO2002031219A1/en active Application Filing
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KR101235151B1 (ko) | 2011-07-15 | 2013-02-22 | 주식회사 템네스트 | 반도체 제조설비의 정전척 |
KR101754257B1 (ko) | 2012-11-27 | 2017-07-06 | 도쿄엘렉트론가부시키가이샤 | 재치대 구조 및 포커스 링을 보지하는 방법 |
KR20220111231A (ko) * | 2013-01-31 | 2022-08-09 | 도쿄엘렉트론가부시키가이샤 | 재치대 및 플라즈마 처리 장치 |
KR20140098707A (ko) * | 2013-01-31 | 2014-08-08 | 도쿄엘렉트론가부시키가이샤 | 재치대 및 플라즈마 처리 장치 |
US11705356B2 (en) | 2013-01-31 | 2023-07-18 | Tokyo Electron Limited | Mounting table and plasma processing apparatus |
US10727101B2 (en) | 2013-01-31 | 2020-07-28 | Tokyo Electron Limited | Mounting table and plasma processing apparatus |
KR102553457B1 (ko) * | 2013-01-31 | 2023-07-10 | 도쿄엘렉트론가부시키가이샤 | 재치대 및 플라즈마 처리 장치 |
KR102428060B1 (ko) * | 2013-01-31 | 2022-08-03 | 도쿄엘렉트론가부시키가이샤 | 재치대 및 플라즈마 처리 장치 |
KR20220034761A (ko) * | 2014-12-25 | 2022-03-18 | 도쿄엘렉트론가부시키가이샤 | 정전 흡착 방법 및 기판 처리 장치 |
US11521886B2 (en) | 2014-12-25 | 2022-12-06 | Tokyo Electron Limited | Substrate processing apparatus and substrate support |
KR102374799B1 (ko) * | 2014-12-25 | 2022-03-15 | 도쿄엘렉트론가부시키가이샤 | 정전 흡착 방법 및 기판 처리 장치 |
KR20160078917A (ko) * | 2014-12-25 | 2016-07-05 | 도쿄엘렉트론가부시키가이샤 | 정전 흡착 방법 및 기판 처리 장치 |
KR102582878B1 (ko) * | 2014-12-25 | 2023-09-25 | 도쿄엘렉트론가부시키가이샤 | 정전 흡착 방법 및 기판 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
DE60135672D1 (de) | 2008-10-16 |
AU2001296352A1 (en) | 2002-04-22 |
EP1332241A1 (en) | 2003-08-06 |
EP1332241B1 (en) | 2008-09-03 |
EP1332241A4 (en) | 2006-08-16 |
WO2002031219A8 (en) | 2002-09-06 |
JP4913313B2 (ja) | 2012-04-11 |
IL154439A0 (en) | 2003-09-17 |
CN1917164A (zh) | 2007-02-21 |
CN1468322A (zh) | 2004-01-14 |
ATE407232T1 (de) | 2008-09-15 |
WO2002031219A1 (en) | 2002-04-18 |
IL154439A (en) | 2006-04-10 |
KR20030051645A (ko) | 2003-06-25 |
US6475336B1 (en) | 2002-11-05 |
CN100424849C (zh) | 2008-10-08 |
JP2004511901A (ja) | 2004-04-15 |
CA2419130A1 (en) | 2002-04-18 |
CN1285757C (zh) | 2006-11-22 |
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