DE60135672D1 - Elektrostatisch festgeklemmter randring für die plasmaverarbeitung - Google Patents

Elektrostatisch festgeklemmter randring für die plasmaverarbeitung

Info

Publication number
DE60135672D1
DE60135672D1 DE60135672T DE60135672T DE60135672D1 DE 60135672 D1 DE60135672 D1 DE 60135672D1 DE 60135672 T DE60135672 T DE 60135672T DE 60135672 T DE60135672 T DE 60135672T DE 60135672 D1 DE60135672 D1 DE 60135672D1
Authority
DE
Germany
Prior art keywords
edge ring
plasma processing
rim ring
fixed rim
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135672T
Other languages
English (en)
Inventor
Jerome S Hubacek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60135672D1 publication Critical patent/DE60135672D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE60135672T 2000-10-06 2001-09-26 Elektrostatisch festgeklemmter randring für die plasmaverarbeitung Expired - Lifetime DE60135672D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/680,515 US6475336B1 (en) 2000-10-06 2000-10-06 Electrostatically clamped edge ring for plasma processing
PCT/US2001/030286 WO2002031219A1 (en) 2000-10-06 2001-09-26 Electrostatically clamped edge ring for plasma processing

Publications (1)

Publication Number Publication Date
DE60135672D1 true DE60135672D1 (de) 2008-10-16

Family

ID=24731424

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135672T Expired - Lifetime DE60135672D1 (de) 2000-10-06 2001-09-26 Elektrostatisch festgeklemmter randring für die plasmaverarbeitung

Country Status (11)

Country Link
US (1) US6475336B1 (de)
EP (1) EP1332241B1 (de)
JP (1) JP4913313B2 (de)
KR (1) KR100807136B1 (de)
CN (2) CN1285757C (de)
AT (1) ATE407232T1 (de)
AU (1) AU2001296352A1 (de)
CA (1) CA2419130A1 (de)
DE (1) DE60135672D1 (de)
IL (2) IL154439A0 (de)
WO (1) WO2002031219A1 (de)

Families Citing this family (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US20030106646A1 (en) * 2001-12-11 2003-06-12 Applied Materials, Inc. Plasma chamber insert ring
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
JP4260450B2 (ja) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
US7582186B2 (en) * 2002-12-20 2009-09-01 Tokyo Electron Limited Method and apparatus for an improved focus ring in a plasma processing system
US7850174B2 (en) * 2003-01-07 2010-12-14 Tokyo Electron Limited Plasma processing apparatus and focus ring
JP5492578B2 (ja) * 2003-04-24 2014-05-14 東京エレクトロン株式会社 プラズマ処理装置
JP4547182B2 (ja) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 プラズマ処理装置
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US20050103274A1 (en) * 2003-11-14 2005-05-19 Cheng-Tsung Yu Reliability assessment system and method
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20050279457A1 (en) * 2004-06-04 2005-12-22 Tokyo Electron Limited Plasma processing apparatus and method, and plasma control unit
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
GB0424371D0 (en) * 2004-11-04 2004-12-08 Trikon Technologies Ltd Shielding design for backside metal deposition
JP4849829B2 (ja) * 2005-05-15 2012-01-11 株式会社ソニー・コンピュータエンタテインメント センタ装置
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
KR100733080B1 (ko) * 2006-01-03 2007-06-29 삼성전자주식회사 식각장치
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
US20080066868A1 (en) * 2006-09-19 2008-03-20 Tokyo Electron Limited Focus ring and plasma processing apparatus
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
KR101386175B1 (ko) * 2007-09-19 2014-04-17 삼성전자주식회사 반도체 식각장치 및 방법과 그 식각장치의 정전척
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
EP1953802A3 (de) * 2007-02-01 2012-05-23 Parker-Hannifin Corporation Halbleiterprozesskammer
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20080296261A1 (en) * 2007-06-01 2008-12-04 Nordson Corporation Apparatus and methods for improving treatment uniformity in a plasma process
US20090025636A1 (en) * 2007-07-27 2009-01-29 Applied Materials, Inc. High profile minimum contact process kit for hdp-cvd application
US20090089963A1 (en) * 2007-09-25 2009-04-09 Vanderlinden Roger P Pick-up head having at least one main broom therein, for a mobile sweeping vehicle
WO2009085163A1 (en) 2007-12-19 2009-07-09 Lam Research Corporation A composite showerhead electrode assembly for a plasma processing apparatus
SG187387A1 (en) 2007-12-19 2013-02-28 Lam Res Corp Film adhesive for semiconductor vacuum processing apparatus
CN101471275B (zh) * 2007-12-26 2011-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种被处理体的保持装置
US20090261065A1 (en) * 2008-04-18 2009-10-22 Lam Research Corporation Components for use in a plasma chamber having reduced particle generation and method of making
US8409355B2 (en) * 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8652260B2 (en) * 2008-08-08 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for holding semiconductor wafers
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
WO2010021890A2 (en) * 2008-08-19 2010-02-25 Lam Research Corporation Edge rings for electrostatic chucks
WO2010036707A2 (en) * 2008-09-26 2010-04-01 Lam Research Corporation Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring
JP5100617B2 (ja) * 2008-11-07 2012-12-19 東京エレクトロン株式会社 リング状部材及びその製造方法
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8139340B2 (en) * 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
JP5508737B2 (ja) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
WO2010101191A1 (ja) * 2009-03-03 2010-09-10 東京エレクトロン株式会社 載置台構造、成膜装置、及び、原料回収方法
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9299539B2 (en) * 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
DE202010014805U1 (de) * 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche
KR20120116923A (ko) * 2009-11-30 2012-10-23 램 리써치 코포레이션 각진 측벽을 가진 정전 척
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
SG180882A1 (en) * 2009-12-15 2012-07-30 Lam Res Corp Adjusting substrate temperature to improve cd uniformity
US8623145B2 (en) * 2010-03-25 2014-01-07 Parker-Hannifin Corporation Substrate processing apparatus with composite seal
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
JP5503503B2 (ja) * 2010-11-09 2014-05-28 東京エレクトロン株式会社 プラズマ処理装置
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
KR101235151B1 (ko) 2011-07-15 2013-02-22 주식회사 템네스트 반도체 제조설비의 정전척
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
KR101319824B1 (ko) * 2012-01-05 2013-10-23 (재)한국나노기술원 냉각장치가 구비된 웨이퍼 클램프
JP5313375B2 (ja) * 2012-02-20 2013-10-09 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
JP2014107387A (ja) 2012-11-27 2014-06-09 Tokyo Electron Ltd 載置台構造及びフォーカスリングを保持する方法
US10557190B2 (en) * 2013-01-24 2020-02-11 Tokyo Electron Limited Substrate processing apparatus and susceptor
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置
KR101317942B1 (ko) * 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
CN104124126B (zh) * 2013-04-26 2016-12-28 北京北方微电子基地设备工艺研究中心有限责任公司 一种承载装置及等离子体加工设备
DE102013012082A1 (de) * 2013-07-22 2015-01-22 Aixtron Se Vorrichtung zum thermischen Behandeln eines Halbleitersubstrates, insbesondere zum Aufbringen einer Beschichtung
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
CN106716619B (zh) * 2014-09-30 2020-09-15 住友大阪水泥股份有限公司 静电吸盘装置
CN105575863B (zh) * 2014-11-10 2019-02-22 中微半导体设备(上海)有限公司 等离子体处理装置、基片卸载装置及方法
US10109510B2 (en) * 2014-12-18 2018-10-23 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US9922806B2 (en) 2015-06-23 2018-03-20 Tokyo Electron Limited Etching method and plasma processing apparatus
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
KR102604063B1 (ko) * 2016-08-18 2023-11-21 삼성전자주식회사 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치
US9922857B1 (en) 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
CN111226309B (zh) 2017-11-06 2023-09-19 日本碍子株式会社 静电卡盘组件、静电卡盘及聚焦环
CN109750279A (zh) * 2017-11-07 2019-05-14 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
SG11202004504VA (en) * 2017-12-15 2020-07-29 Lam Res Corp Ring structures and systems for use in a plasma chamber
US10766057B2 (en) 2017-12-28 2020-09-08 Micron Technology, Inc. Components and systems for cleaning a tool for forming a semiconductor device, and related methods
US20220344134A1 (en) * 2018-01-19 2022-10-27 Applied Materials, Inc. Process kit for a substrate support
WO2019143473A1 (en) * 2018-01-22 2019-07-25 Applied Materials, Inc. Processing with powered edge ring
CN110323117B (zh) 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
JP7122864B2 (ja) * 2018-05-14 2022-08-22 東京エレクトロン株式会社 クリーニング方法及び基板処理装置
JP2018164092A (ja) * 2018-05-28 2018-10-18 東京エレクトロン株式会社 静電吸着方法、プラズマ処理方法及びプラズマ処理装置
JP7101055B2 (ja) * 2018-06-12 2022-07-14 東京エレクトロン株式会社 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法
KR102600003B1 (ko) 2018-10-30 2023-11-09 삼성전자주식회사 반도체 공정 챔버 및 반도체 소자의 제조 방법
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング
JP7541005B2 (ja) * 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
WO2020163147A1 (en) * 2019-02-08 2020-08-13 Lam Research Corporation Pedestals for modulating film properties in atomic layer deposition (ald) substrate processing chambers
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
WO2021044885A1 (ja) 2019-09-06 2021-03-11 Toto株式会社 静電チャック
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
KR102697630B1 (ko) 2019-10-15 2024-08-23 삼성전자주식회사 식각 장치
CN112701027B (zh) * 2019-10-22 2024-09-17 夏泰鑫半导体(青岛)有限公司 等离子体处理装置及边缘环的更换方法
JP6781320B2 (ja) * 2019-10-24 2020-11-04 東京エレクトロン株式会社 静電吸着方法、プラズマ処理方法及びプラズマ処理装置
JP7361588B2 (ja) * 2019-12-16 2023-10-16 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN111180370A (zh) * 2020-02-21 2020-05-19 北京北方华创微电子装备有限公司 晶圆承载托盘及半导体加工设备
KR20220102201A (ko) 2021-01-12 2022-07-20 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
CN115249606A (zh) * 2021-04-28 2022-10-28 中微半导体设备(上海)股份有限公司 等离子体处理装置、下电极组件及其形成方法
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR102637744B1 (ko) * 2021-09-30 2024-02-19 주식회사 나이스플라즈마 클램프 링이 구비된 클램프 척
CN114293176A (zh) * 2021-12-31 2022-04-08 拓荆科技股份有限公司 晶圆支撑盘及工艺腔体

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
GB2147459A (en) 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
US4692836A (en) 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US4793975A (en) 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JP3129452B2 (ja) 1990-03-13 2001-01-29 富士電機株式会社 静電チャック
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5055964A (en) 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
JPH06124998A (ja) * 1992-10-12 1994-05-06 Tadahiro Omi プラズマ処理装置
US5350479A (en) 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
EP0624896B1 (de) 1993-05-13 1999-09-22 Applied Materials, Inc. Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen
JPH08293539A (ja) * 1995-04-21 1996-11-05 Hitachi Ltd 半導体製造方法および装置
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5805408A (en) 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
CN1178392A (zh) * 1996-09-19 1998-04-08 株式会社日立制作所 静电吸盘和应用了静电吸盘的样品处理方法及装置
US5740009A (en) * 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection
US6132517A (en) * 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー
US5986874A (en) 1997-06-03 1999-11-16 Watkins-Johnson Company Electrostatic support assembly having an integral ion focus ring
US6039836A (en) 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
KR100258984B1 (ko) 1997-12-24 2000-08-01 윤종용 건식 식각 장치
US6013984A (en) 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US5998932A (en) 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
DE29813326U1 (de) * 1998-07-29 1998-12-10 PROTEC Gesellschaft für Werkstoff- und Oberflächentechnik mbH, 57234 Wilnsdorf Verbesserte Vorrichtung zum Schutz von elektrostatischen Haltesystemen in Anlagen zur Bearbeitung von Wafern
US6117349A (en) 1998-08-28 2000-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring equipped with a sacrificial inner ring
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
JP4119551B2 (ja) * 1998-12-01 2008-07-16 東京エレクトロン株式会社 基板保持台、及びプラズマ処理装置
US6022809A (en) 1998-12-03 2000-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring for an etch chamber and method of using
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity

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CN1468322A (zh) 2004-01-14
CA2419130A1 (en) 2002-04-18
ATE407232T1 (de) 2008-09-15
WO2002031219A8 (en) 2002-09-06
IL154439A0 (en) 2003-09-17
KR100807136B1 (ko) 2008-02-27
EP1332241B1 (de) 2008-09-03
CN1285757C (zh) 2006-11-22
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