IL154439A0 - Electrostatically clamped edge ring for plasma processing - Google Patents
Electrostatically clamped edge ring for plasma processingInfo
- Publication number
- IL154439A0 IL154439A0 IL15443901A IL15443901A IL154439A0 IL 154439 A0 IL154439 A0 IL 154439A0 IL 15443901 A IL15443901 A IL 15443901A IL 15443901 A IL15443901 A IL 15443901A IL 154439 A0 IL154439 A0 IL 154439A0
- Authority
- IL
- Israel
- Prior art keywords
- edge ring
- plasma processing
- clamped edge
- electrostatically clamped
- temperature control
- Prior art date
Links
- 239000004020 conductor Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/680,515 US6475336B1 (en) | 2000-10-06 | 2000-10-06 | Electrostatically clamped edge ring for plasma processing |
PCT/US2001/030286 WO2002031219A1 (en) | 2000-10-06 | 2001-09-26 | Electrostatically clamped edge ring for plasma processing |
Publications (1)
Publication Number | Publication Date |
---|---|
IL154439A0 true IL154439A0 (en) | 2003-09-17 |
Family
ID=24731424
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL15443901A IL154439A0 (en) | 2000-10-06 | 2001-09-26 | Electrostatically clamped edge ring for plasma processing |
IL154439A IL154439A (en) | 2000-10-06 | 2003-02-13 | An electrostatically pressed end ring for plasma processing |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL154439A IL154439A (en) | 2000-10-06 | 2003-02-13 | An electrostatically pressed end ring for plasma processing |
Country Status (11)
Country | Link |
---|---|
US (1) | US6475336B1 (xx) |
EP (1) | EP1332241B1 (xx) |
JP (1) | JP4913313B2 (xx) |
KR (1) | KR100807136B1 (xx) |
CN (2) | CN100424849C (xx) |
AT (1) | ATE407232T1 (xx) |
AU (1) | AU2001296352A1 (xx) |
CA (1) | CA2419130A1 (xx) |
DE (1) | DE60135672D1 (xx) |
IL (2) | IL154439A0 (xx) |
WO (1) | WO2002031219A1 (xx) |
Families Citing this family (136)
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2000
- 2000-10-06 US US09/680,515 patent/US6475336B1/en not_active Expired - Lifetime
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2001
- 2001-09-26 CN CNB2006101592011A patent/CN100424849C/zh not_active Expired - Lifetime
- 2001-09-26 AU AU2001296352A patent/AU2001296352A1/en not_active Abandoned
- 2001-09-26 DE DE60135672T patent/DE60135672D1/de not_active Expired - Lifetime
- 2001-09-26 EP EP01977216A patent/EP1332241B1/en not_active Expired - Lifetime
- 2001-09-26 CN CNB018167756A patent/CN1285757C/zh not_active Expired - Lifetime
- 2001-09-26 CA CA002419130A patent/CA2419130A1/en not_active Abandoned
- 2001-09-26 AT AT01977216T patent/ATE407232T1/de not_active IP Right Cessation
- 2001-09-26 KR KR1020037003501A patent/KR100807136B1/ko active IP Right Grant
- 2001-09-26 JP JP2002534582A patent/JP4913313B2/ja not_active Expired - Lifetime
- 2001-09-26 IL IL15443901A patent/IL154439A0/xx active IP Right Grant
- 2001-09-26 WO PCT/US2001/030286 patent/WO2002031219A1/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
CA2419130A1 (en) | 2002-04-18 |
CN100424849C (zh) | 2008-10-08 |
CN1468322A (zh) | 2004-01-14 |
CN1285757C (zh) | 2006-11-22 |
IL154439A (en) | 2006-04-10 |
US6475336B1 (en) | 2002-11-05 |
DE60135672D1 (de) | 2008-10-16 |
ATE407232T1 (de) | 2008-09-15 |
WO2002031219A1 (en) | 2002-04-18 |
JP2004511901A (ja) | 2004-04-15 |
KR20030051645A (ko) | 2003-06-25 |
CN1917164A (zh) | 2007-02-21 |
WO2002031219A8 (en) | 2002-09-06 |
EP1332241A4 (en) | 2006-08-16 |
AU2001296352A1 (en) | 2002-04-22 |
JP4913313B2 (ja) | 2012-04-11 |
KR100807136B1 (ko) | 2008-02-27 |
EP1332241A1 (en) | 2003-08-06 |
EP1332241B1 (en) | 2008-09-03 |
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