KR100789889B1 - 에피택시용 기판 및 그 제조방법 - Google Patents

에피택시용 기판 및 그 제조방법 Download PDF

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KR100789889B1
KR100789889B1 KR1020057010733A KR20057010733A KR100789889B1 KR 100789889 B1 KR100789889 B1 KR 100789889B1 KR 1020057010733 A KR1020057010733 A KR 1020057010733A KR 20057010733 A KR20057010733 A KR 20057010733A KR 100789889 B1 KR100789889 B1 KR 100789889B1
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substrate
layer
gallium
nitride
electronic device
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KR20050085600A (ko
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로버트 드위린스키
로만 도라드진스키
저지 가르크진스키
레스제크 시에르즈푸토브스키
야스오 칸바라
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암모노 에스피. 제트오. 오.
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Priority claimed from PL357709A external-priority patent/PL225425B1/pl
Priority claimed from PL02357708A external-priority patent/PL357708A1/xx
Priority claimed from PL357696A external-priority patent/PL225423B1/pl
Priority claimed from PL357707A external-priority patent/PL225424B1/pl
Application filed by 암모노 에스피. 제트오. 오. filed Critical 암모노 에스피. 제트오. 오.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
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    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
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    • Y10T428/00—Stock material or miscellaneous articles
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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adornments (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020057010733A 2002-12-11 2003-12-11 에피택시용 기판 및 그 제조방법 Expired - Lifetime KR100789889B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
PL357709A PL225425B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
PL357696A PL225423B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357709 2002-12-11
PLP-357707 2002-12-11
PL357707A PL225424B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357708 2002-12-11
PLP-357696 2002-12-11

Publications (2)

Publication Number Publication Date
KR20050085600A KR20050085600A (ko) 2005-08-29
KR100789889B1 true KR100789889B1 (ko) 2008-01-02

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KR1020057010733A Expired - Lifetime KR100789889B1 (ko) 2002-12-11 2003-12-11 에피택시용 기판 및 그 제조방법
KR1020057010670A Expired - Fee Related KR101060073B1 (ko) 2002-12-11 2003-12-11 템플레이트 타입의 기판 및 그 제조 방법

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Country Status (10)

Country Link
US (3) US7387677B2 (https=)
EP (2) EP1581675B1 (https=)
JP (2) JP4558502B2 (https=)
KR (2) KR100789889B1 (https=)
AT (2) ATE445722T1 (https=)
AU (2) AU2003285769A1 (https=)
DE (2) DE60329713D1 (https=)
PL (2) PL224991B1 (https=)
TW (2) TWI352434B (https=)
WO (2) WO2004053209A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR101172549B1 (ko) * 2005-06-23 2012-08-08 스미토모덴키고교가부시키가이샤 질화물 결정, 질화물 결정 기판, 에피택셜층 부착 질화물결정 기판, 반도체 장치 및 그 제조 방법

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