KR100776606B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR100776606B1
KR100776606B1 KR1020010069362A KR20010069362A KR100776606B1 KR 100776606 B1 KR100776606 B1 KR 100776606B1 KR 1020010069362 A KR1020010069362 A KR 1020010069362A KR 20010069362 A KR20010069362 A KR 20010069362A KR 100776606 B1 KR100776606 B1 KR 100776606B1
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KR
South Korea
Prior art keywords
voltage
terminal
memory cells
wiring
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010069362A
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English (en)
Korean (ko)
Other versions
KR20020077020A (ko
Inventor
가토요시하루
가와모토사토루
Original Assignee
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 후지쯔 가부시끼가이샤 filed Critical 후지쯔 가부시끼가이샤
Publication of KR20020077020A publication Critical patent/KR20020077020A/ko
Application granted granted Critical
Publication of KR100776606B1 publication Critical patent/KR100776606B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/227—Timing of memory operations based on dummy memory elements or replica circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1020010069362A 2001-03-29 2001-11-08 반도체 기억 장치 Expired - Fee Related KR100776606B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001096380A JP3992449B2 (ja) 2001-03-29 2001-03-29 半導体記憶装置
JPJP-P-2001-00096380 2001-03-29

Publications (2)

Publication Number Publication Date
KR20020077020A KR20020077020A (ko) 2002-10-11
KR100776606B1 true KR100776606B1 (ko) 2007-11-16

Family

ID=18950298

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010069362A Expired - Fee Related KR100776606B1 (ko) 2001-03-29 2001-11-08 반도체 기억 장치

Country Status (4)

Country Link
US (2) US6567298B2 (enExample)
JP (1) JP3992449B2 (enExample)
KR (1) KR100776606B1 (enExample)
TW (1) TW559811B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7310356B2 (en) * 2002-06-24 2007-12-18 Paradyne Corporation Automatic discovery of network core type
JP2004110863A (ja) * 2002-09-13 2004-04-08 Renesas Technology Corp 半導体記憶装置
US7103330B2 (en) * 2003-01-28 2006-09-05 Koninklijke Philips Electronics N.V. Method of transmitting information between an information transmitter and an information receiver
JP2004265533A (ja) * 2003-03-03 2004-09-24 Matsushita Electric Ind Co Ltd 半導体記憶回路
US7827077B2 (en) * 2003-05-02 2010-11-02 Visa U.S.A. Inc. Method and apparatus for management of electronic receipts on portable devices
US7226857B2 (en) 2004-07-30 2007-06-05 Micron Technology, Inc. Front-end processing of nickel plated bond pads
DE102004041658A1 (de) * 2004-08-27 2006-03-09 Infineon Technologies Ag Verfahren zum Testen eines integrierten Halbleiterspeichers
JP2007164938A (ja) * 2005-12-16 2007-06-28 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7619944B2 (en) * 2007-01-05 2009-11-17 Innovative Silicon Isi Sa Method and apparatus for variable memory cell refresh
US8804449B2 (en) 2012-09-06 2014-08-12 Micron Technology, Inc. Apparatus and methods to provide power management for memory devices
US10122259B2 (en) * 2015-09-16 2018-11-06 Semiconductor Components Industries, Llc Over power protection for power converter
US10217794B2 (en) 2017-05-24 2019-02-26 Globalfoundries Singapore Pte. Ltd. Integrated circuits with vertical capacitors and methods for producing the same
US11450364B2 (en) * 2020-08-27 2022-09-20 Taiwan Semiconductor Manufacturing Company Ltd. Computing-in-memory architecture

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644779A (ja) * 1991-08-26 1994-02-18 Nec Corp 半導体ダイナミックｒａｍ装置
JPH0765573A (ja) * 1993-06-30 1995-03-10 Internatl Business Mach Corp <Ibm> Ｄｒａｍセル
KR19990003929A (ko) * 1997-06-26 1999-01-15 김영환 비휘발성 반도체 메모리 장치
JPH11126492A (ja) * 1997-10-21 1999-05-11 Sharp Corp 不揮発性半導体記憶装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778991B2 (ja) * 1988-07-26 1995-08-23 株式会社東芝 半導体メモリ
JP2762589B2 (ja) * 1989-07-21 1998-06-04 日本電気株式会社 半導体メモリ回路
US5337270A (en) * 1991-08-26 1994-08-09 Nec Corporation Semiconductor dynamic memory
JPH05120870A (ja) * 1991-10-24 1993-05-18 Nec Ibaraki Ltd Ｄ−ｒａｍのリフレツシユ方式
JPH05121650A (ja) * 1991-10-25 1993-05-18 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路装置
JP3274728B2 (ja) * 1992-12-17 2002-04-15 株式会社 沖マイクロデザイン 半導体集積回路装置
JPH06223568A (ja) * 1993-01-29 1994-08-12 Mitsubishi Electric Corp 中間電位発生装置
JP3297124B2 (ja) * 1993-02-24 2002-07-02 三菱電機株式会社 ダイナミック型半導体記憶装置
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
JPH07201177A (ja) * 1993-12-28 1995-08-04 Sanyo Electric Co Ltd １／２ｖｃｃ発生回路の共用化方式
JP3583482B2 (ja) * 1994-10-04 2004-11-04 株式会社ルネサステクノロジ 半導体集積回路装置
JP2576425B2 (ja) * 1994-10-27 1997-01-29 日本電気株式会社 強誘電体メモリ装置
JP3369041B2 (ja) * 1996-03-19 2003-01-20 富士通株式会社 半導体記憶装置
JPH1055681A (ja) * 1996-08-12 1998-02-24 Sony Corp 半導体装置
JPH1125688A (ja) * 1997-07-02 1999-01-29 Oki Electric Ind Co Ltd 半導体記憶装置
JP2000030440A (ja) * 1998-07-08 2000-01-28 Mitsubishi Electric Corp 半導体記憶装置
JP4334646B2 (ja) * 1999-01-20 2009-09-30 パナソニック株式会社 半導体記憶装置の制御方法
JP2000215660A (ja) * 1999-01-25 2000-08-04 Nec Corp 半導体記憶装置
JP3604576B2 (ja) * 1999-02-19 2004-12-22 シャープ株式会社 強誘電体メモリ装置
JP4555416B2 (ja) * 1999-09-22 2010-09-29 富士通セミコンダクター株式会社 半導体集積回路およびその制御方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644779A (ja) * 1991-08-26 1994-02-18 Nec Corp 半導体ダイナミックｒａｍ装置
JPH0765573A (ja) * 1993-06-30 1995-03-10 Internatl Business Mach Corp <Ibm> Ｄｒａｍセル
KR19990003929A (ko) * 1997-06-26 1999-01-15 김영환 비휘발성 반도체 메모리 장치
JPH11126492A (ja) * 1997-10-21 1999-05-11 Sharp Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US6567298B2 (en) 2003-05-20
JP2002298576A (ja) 2002-10-11
US6847540B2 (en) 2005-01-25
KR20020077020A (ko) 2002-10-11
TW559811B (en) 2003-11-01
JP3992449B2 (ja) 2007-10-17
US20030202393A1 (en) 2003-10-30
US20020141226A1 (en) 2002-10-03

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