KR100742672B1 - 반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법 - Google Patents

반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법 Download PDF

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Publication number
KR100742672B1
KR100742672B1 KR1020057009567A KR20057009567A KR100742672B1 KR 100742672 B1 KR100742672 B1 KR 100742672B1 KR 1020057009567 A KR1020057009567 A KR 1020057009567A KR 20057009567 A KR20057009567 A KR 20057009567A KR 100742672 B1 KR100742672 B1 KR 100742672B1
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KR
South Korea
Prior art keywords
film
semiconductor
alloy
alloy material
auag
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Expired - Lifetime
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KR1020057009567A
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English (en)
Korean (ko)
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KR20050088086A (ko
Inventor
카즈노리 이노우에
치하루 이시쿠라
Original Assignee
샤프 가부시키가이샤
다나까 기낀조꾸 고교 가부시끼가이샤
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Publication of KR20050088086A publication Critical patent/KR20050088086A/ko
Application granted granted Critical
Publication of KR100742672B1 publication Critical patent/KR100742672B1/ko
Assigned to 다나카 기킨조쿠 고교 가부시키가이샤 reassignment 다나카 기킨조쿠 고교 가부시키가이샤 권리의 전부이전등록 Assignors: 다나까 홀딩스 가부시끼가이샤
Anticipated expiration legal-status Critical
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020057009567A 2002-11-26 2003-10-29 반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법 Expired - Lifetime KR100742672B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
JPJP-P-2002-00342797 2002-11-26

Publications (2)

Publication Number Publication Date
KR20050088086A KR20050088086A (ko) 2005-09-01
KR100742672B1 true KR100742672B1 (ko) 2007-07-25

Family

ID=32375901

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057009567A Expired - Lifetime KR100742672B1 (ko) 2002-11-26 2003-10-29 반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법

Country Status (7)

Country Link
US (1) US20060226546A1 (https=)
JP (1) JP2004179327A (https=)
KR (1) KR100742672B1 (https=)
CN (1) CN100386848C (https=)
AU (1) AU2003280621A1 (https=)
TW (1) TW200416748A (https=)
WO (1) WO2004049415A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578728B (zh) * 2006-12-21 2012-05-23 株式会社神户制钢所 燃料电池的金属隔板用合金皮膜、其制造方法和溅射用靶材、以及金属隔板和燃料电池
JP4176133B1 (ja) * 2007-06-06 2008-11-05 田中貴金属工業株式会社 プローブピン
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254761A (ja) 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770496A (en) * 1971-06-25 1973-11-06 Du Pont Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures
JPS54144870A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Wire bonding method for semiconductor element
JPS6173326A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法
JPH03155134A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 集積回路装置の配線電極
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH05109818A (ja) * 1991-10-16 1993-04-30 Hitachi Chem Co Ltd 半導体チツプの接続構造
DE69322233T2 (de) * 1992-08-27 1999-07-08 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
JPH118341A (ja) * 1997-06-18 1999-01-12 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4868694B2 (ja) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
JP3707548B2 (ja) * 2002-03-12 2005-10-19 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254761A (ja) 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム

Also Published As

Publication number Publication date
TW200416748A (en) 2004-09-01
AU2003280621A8 (en) 2004-06-18
JP2004179327A (ja) 2004-06-24
KR20050088086A (ko) 2005-09-01
CN1717783A (zh) 2006-01-04
CN100386848C (zh) 2008-05-07
US20060226546A1 (en) 2006-10-12
TWI304220B (https=) 2008-12-11
AU2003280621A1 (en) 2004-06-18
WO2004049415A1 (ja) 2004-06-10

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